TWI683392B - 處理晶圓的方法 - Google Patents

處理晶圓的方法 Download PDF

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Publication number
TWI683392B
TWI683392B TW107116827A TW107116827A TWI683392B TW I683392 B TWI683392 B TW I683392B TW 107116827 A TW107116827 A TW 107116827A TW 107116827 A TW107116827 A TW 107116827A TW I683392 B TWI683392 B TW I683392B
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TW
Taiwan
Prior art keywords
wafer
protective film
sheet
buffer layer
adhesive
Prior art date
Application number
TW107116827A
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English (en)
Chinese (zh)
Other versions
TW201909333A (zh
Inventor
凱爾H 普瑞渥瑟
Original Assignee
日商迪思科股份有限公司
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Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201909333A publication Critical patent/TW201909333A/zh
Application granted granted Critical
Publication of TWI683392B publication Critical patent/TWI683392B/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/121Arrangements for protection of devices protecting against mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/123Preparing bulk and homogeneous wafers by grinding or lapping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90Thermal treatments, e.g. annealing or sintering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
TW107116827A 2017-05-18 2018-05-17 處理晶圓的方法 TWI683392B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017208405.7A DE102017208405B4 (de) 2017-05-18 2017-05-18 Verfahren zum Bearbeiten eines Wafers und Schutzfolie
DE102017208405.7 2017-05-18

Publications (2)

Publication Number Publication Date
TW201909333A TW201909333A (zh) 2019-03-01
TWI683392B true TWI683392B (zh) 2020-01-21

Family

ID=64272078

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107116827A TWI683392B (zh) 2017-05-18 2018-05-17 處理晶圓的方法

Country Status (7)

Country Link
US (2) US11637074B2 (https=)
JP (3) JP6888218B2 (https=)
KR (1) KR102105114B1 (https=)
CN (1) CN108933098B (https=)
DE (1) DE102017208405B4 (https=)
SG (1) SG10201803494SA (https=)
TW (1) TWI683392B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110663106B (zh) * 2017-05-18 2023-09-22 株式会社迪思科 在加工晶圆中使用的保护片、用于晶圆的处理系统以及晶圆与保护片的组合体
US12312512B2 (en) 2019-02-26 2025-05-27 Disco Corporation Adhesive sheet for backgrinding and production method for semiconductor wafer
US12243766B2 (en) 2019-02-26 2025-03-04 Disco Corporation Back grinding adhesive sheet, and method for manufacturing semiconductor wafer
JP7277019B2 (ja) * 2019-03-05 2023-05-18 株式会社ディスコ ウェーハの加工方法
JP7333192B2 (ja) * 2019-04-23 2023-08-24 株式会社ディスコ 移設方法
JP7229844B2 (ja) 2019-04-25 2023-02-28 株式会社ディスコ ウエーハの加工方法
JP7330616B2 (ja) * 2019-05-10 2023-08-22 株式会社ディスコ ウェーハの加工方法
JP7330615B2 (ja) * 2019-05-10 2023-08-22 株式会社ディスコ ウェーハの加工方法
JP7286245B2 (ja) * 2019-06-07 2023-06-05 株式会社ディスコ ウェーハの加工方法
DE102019211540A1 (de) * 2019-08-01 2021-02-04 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7345973B2 (ja) * 2019-08-07 2023-09-19 株式会社ディスコ ウェーハの加工方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP2021064627A (ja) * 2019-10-10 2021-04-22 株式会社ディスコ ウェーハの加工方法
US11508606B2 (en) * 2019-11-05 2022-11-22 Nxp B.V. Technique for handling diced wafers of integrated circuits
JP7430515B2 (ja) * 2019-11-06 2024-02-13 株式会社ディスコ ウエーハの処理方法
JP2021077720A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法
JP7455470B2 (ja) * 2020-03-13 2024-03-26 株式会社ディスコ ウェーハの加工方法
JP7536393B2 (ja) * 2020-06-02 2024-08-20 株式会社ディスコ ウェーハの加工方法、保護部材貼着装置、及び、加工装置
JP2022041447A (ja) 2020-09-01 2022-03-11 株式会社ディスコ ウェーハの加工方法
CN112157580A (zh) * 2020-09-26 2021-01-01 绍兴自远磨具有限公司 一种硅片研磨盘及其制备方法和用途
US11587809B2 (en) * 2020-09-30 2023-02-21 Advanced Semiconductor Engineering, Inc. Wafer supporting mechanism and method for wafer dicing
JP7709877B2 (ja) * 2021-09-15 2025-07-17 株式会社Screenホールディングス 端部状態確認装置
JP7845959B2 (ja) * 2022-08-22 2026-04-14 株式会社ディスコ 被加工物の加工方法
JP2024079914A (ja) 2022-12-01 2024-06-13 株式会社ディスコ 樹脂シート
DE102023203941A1 (de) * 2023-04-27 2024-10-31 Carl Zeiss Smt Gmbh Verfahren zur Nachbearbeitung und zur Handhabung von MEMS-Chips

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231700A (ja) * 2008-03-25 2009-10-08 Furukawa Electric Co Ltd:The ウエハ加工用テープ
KR20120023258A (ko) * 2010-09-01 2012-03-13 주식회사 이오테크닉스 웨이퍼 가공방법 및 웨이퍼 가공장치

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173135A (en) * 1981-04-17 1982-10-25 Toshio Kunugi Manufacture of super-strong film
JPS58153352A (ja) 1982-03-09 1983-09-12 Toshiba Corp 半導体素子の製造方法
JP2000100558A (ja) * 1998-09-18 2000-04-07 Matsushita Electric Ind Co Ltd 発光装置
JP4780828B2 (ja) * 2000-11-22 2011-09-28 三井化学株式会社 ウエハ加工用粘着テープ及びその製造方法並びに使用方法
JP2003037155A (ja) * 2001-07-25 2003-02-07 Mitsubishi Gas Chem Co Inc 薄葉化ウェハーの製造法
JP2002203821A (ja) 2000-12-28 2002-07-19 Mitsubishi Gas Chem Co Inc 接着および剥離法
DE10121556A1 (de) * 2001-05-03 2002-11-14 Infineon Technologies Ag Verfahren zum Rückseitenschleifen von Wafern
US6777267B2 (en) * 2002-11-01 2004-08-17 Agilent Technologies, Inc. Die singulation using deep silicon etching
JP2005191297A (ja) 2003-12-25 2005-07-14 Jsr Corp ダイシングフィルム及び半導体ウェハの切断方法
JP2005191296A (ja) 2003-12-25 2005-07-14 Jsr Corp バックグラインドテープ及び半導体ウェハの研磨方法
US20050244631A1 (en) * 2004-04-28 2005-11-03 Mitsui Chemicals, Inc. Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same
JP2006210401A (ja) * 2005-01-25 2006-08-10 Disco Abrasive Syst Ltd ウェーハの分割方法
JP4930679B2 (ja) 2005-12-14 2012-05-16 日本ゼオン株式会社 半導体素子の製造方法
JP5151104B2 (ja) 2006-09-22 2013-02-27 パナソニック株式会社 電子部品の製造方法
JP5064985B2 (ja) * 2006-12-05 2012-10-31 古河電気工業株式会社 半導体ウェハの処理方法
TWI324802B (en) * 2007-02-16 2010-05-11 Advanced Semiconductor Eng Method of thinning wafer
JP2010027685A (ja) 2008-07-15 2010-02-04 Lintec Corp 半導体ウエハの研削方法
JP2011054827A (ja) 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd 半導体装置の製造方法及び表面保護テープ
US8252665B2 (en) * 2009-09-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Protection layer for adhesive material at wafer edge
JP5545640B2 (ja) * 2010-05-11 2014-07-09 株式会社ディスコ 研削方法
WO2013095344A1 (en) * 2011-12-19 2013-06-27 Intel Corporation Using an optically transparent solid material as a support structure for attachment of a semiconductor material to a substrate
JP6009217B2 (ja) 2012-05-18 2016-10-19 株式会社ディスコ 保護部材の貼着方法
JP6061590B2 (ja) * 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法
KR102061695B1 (ko) * 2012-10-17 2020-01-02 삼성전자주식회사 웨이퍼 가공 방법
JP6004100B2 (ja) * 2013-05-24 2016-10-05 富士電機株式会社 半導体装置の製造方法
JP5666659B2 (ja) * 2013-07-17 2015-02-12 リンテック株式会社 ウェハ加工用シート
US9184083B2 (en) * 2013-07-29 2015-11-10 3M Innovative Properties Company Apparatus, hybrid laminated body, method and materials for temporary substrate support
US20160176169A1 (en) * 2013-08-01 2016-06-23 Lintec Corporation Protective Film Formation-Use Composite Sheet
JP2016001677A (ja) * 2014-06-12 2016-01-07 株式会社ディスコ ウエーハの加工方法
US9786643B2 (en) * 2014-07-08 2017-10-10 Micron Technology, Inc. Semiconductor devices comprising protected side surfaces and related methods
US11437275B2 (en) 2015-08-31 2022-09-06 Disco Corporation Method of processing wafer and protective sheeting for use in this method
DE102015216619B4 (de) 2015-08-31 2017-08-10 Disco Corporation Verfahren zum Bearbeiten eines Wafers
DE102018200656A1 (de) * 2018-01-16 2019-07-18 Disco Corporation Verfahren zum Bearbeiten eines Wafers
DE102018202254A1 (de) * 2018-02-14 2019-08-14 Disco Corporation Verfahren zum Bearbeiten eines Wafers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231700A (ja) * 2008-03-25 2009-10-08 Furukawa Electric Co Ltd:The ウエハ加工用テープ
KR20120023258A (ko) * 2010-09-01 2012-03-13 주식회사 이오테크닉스 웨이퍼 가공방법 및 웨이퍼 가공장치

Also Published As

Publication number Publication date
DE102017208405B4 (de) 2024-05-02
KR102105114B1 (ko) 2020-04-27
DE102017208405A1 (de) 2018-11-22
US20180337141A1 (en) 2018-11-22
JP2018195805A (ja) 2018-12-06
JP2020113778A (ja) 2020-07-27
SG10201803494SA (en) 2018-12-28
US20210151390A1 (en) 2021-05-20
US11637074B2 (en) 2023-04-25
KR20180127230A (ko) 2018-11-28
CN108933098A (zh) 2018-12-04
CN108933098B (zh) 2024-12-24
JP2019169727A (ja) 2019-10-03
TW201909333A (zh) 2019-03-01
US11784138B2 (en) 2023-10-10
JP6740542B2 (ja) 2020-08-19
JP6888218B2 (ja) 2021-06-16

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