JP6888218B2 - ウェハ処理方法 - Google Patents

ウェハ処理方法 Download PDF

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Publication number
JP6888218B2
JP6888218B2 JP2018081510A JP2018081510A JP6888218B2 JP 6888218 B2 JP6888218 B2 JP 6888218B2 JP 2018081510 A JP2018081510 A JP 2018081510A JP 2018081510 A JP2018081510 A JP 2018081510A JP 6888218 B2 JP6888218 B2 JP 6888218B2
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JP
Japan
Prior art keywords
wafer
protective film
sheet
cushion layer
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018081510A
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English (en)
Japanese (ja)
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JP2018195805A (ja
Inventor
ハインツ プリーヴァッサー カール
ハインツ プリーヴァッサー カール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
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Disco Corp
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Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of JP2018195805A publication Critical patent/JP2018195805A/ja
Application granted granted Critical
Publication of JP6888218B2 publication Critical patent/JP6888218B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2018081510A 2017-05-18 2018-04-20 ウェハ処理方法 Active JP6888218B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017208405.7A DE102017208405B4 (de) 2017-05-18 2017-05-18 Verfahren zum Bearbeiten eines Wafers und Schutzfolie
DE102017208405.7 2017-05-18

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2019098689A Division JP6740542B2 (ja) 2017-05-18 2019-05-27 ウェハ処理方法
JP2020042019A Division JP2020113778A (ja) 2017-05-18 2020-03-11 ウェハ処理方法

Publications (2)

Publication Number Publication Date
JP2018195805A JP2018195805A (ja) 2018-12-06
JP6888218B2 true JP6888218B2 (ja) 2021-06-16

Family

ID=64272078

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2018081510A Active JP6888218B2 (ja) 2017-05-18 2018-04-20 ウェハ処理方法
JP2019098689A Active JP6740542B2 (ja) 2017-05-18 2019-05-27 ウェハ処理方法
JP2020042019A Pending JP2020113778A (ja) 2017-05-18 2020-03-11 ウェハ処理方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2019098689A Active JP6740542B2 (ja) 2017-05-18 2019-05-27 ウェハ処理方法
JP2020042019A Pending JP2020113778A (ja) 2017-05-18 2020-03-11 ウェハ処理方法

Country Status (7)

Country Link
US (2) US11637074B2 (https=)
JP (3) JP6888218B2 (https=)
KR (1) KR102105114B1 (https=)
CN (1) CN108933098B (https=)
DE (1) DE102017208405B4 (https=)
SG (1) SG10201803494SA (https=)
TW (1) TWI683392B (https=)

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CN110663106B (zh) * 2017-05-18 2023-09-22 株式会社迪思科 在加工晶圆中使用的保护片、用于晶圆的处理系统以及晶圆与保护片的组合体
US12312512B2 (en) 2019-02-26 2025-05-27 Disco Corporation Adhesive sheet for backgrinding and production method for semiconductor wafer
US12243766B2 (en) 2019-02-26 2025-03-04 Disco Corporation Back grinding adhesive sheet, and method for manufacturing semiconductor wafer
JP7277019B2 (ja) * 2019-03-05 2023-05-18 株式会社ディスコ ウェーハの加工方法
JP7333192B2 (ja) * 2019-04-23 2023-08-24 株式会社ディスコ 移設方法
JP7229844B2 (ja) 2019-04-25 2023-02-28 株式会社ディスコ ウエーハの加工方法
JP7330616B2 (ja) * 2019-05-10 2023-08-22 株式会社ディスコ ウェーハの加工方法
JP7330615B2 (ja) * 2019-05-10 2023-08-22 株式会社ディスコ ウェーハの加工方法
JP7286245B2 (ja) * 2019-06-07 2023-06-05 株式会社ディスコ ウェーハの加工方法
DE102019211540A1 (de) * 2019-08-01 2021-02-04 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7345973B2 (ja) * 2019-08-07 2023-09-19 株式会社ディスコ ウェーハの加工方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP2021064627A (ja) * 2019-10-10 2021-04-22 株式会社ディスコ ウェーハの加工方法
US11508606B2 (en) * 2019-11-05 2022-11-22 Nxp B.V. Technique for handling diced wafers of integrated circuits
JP7430515B2 (ja) * 2019-11-06 2024-02-13 株式会社ディスコ ウエーハの処理方法
JP2021077720A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法
JP7455470B2 (ja) * 2020-03-13 2024-03-26 株式会社ディスコ ウェーハの加工方法
JP7536393B2 (ja) * 2020-06-02 2024-08-20 株式会社ディスコ ウェーハの加工方法、保護部材貼着装置、及び、加工装置
JP2022041447A (ja) 2020-09-01 2022-03-11 株式会社ディスコ ウェーハの加工方法
CN112157580A (zh) * 2020-09-26 2021-01-01 绍兴自远磨具有限公司 一种硅片研磨盘及其制备方法和用途
US11587809B2 (en) * 2020-09-30 2023-02-21 Advanced Semiconductor Engineering, Inc. Wafer supporting mechanism and method for wafer dicing
JP7709877B2 (ja) * 2021-09-15 2025-07-17 株式会社Ｓｃｒｅｅｎホールディングス 端部状態確認装置
JP7845959B2 (ja) * 2022-08-22 2026-04-14 株式会社ディスコ 被加工物の加工方法
JP2024079914A (ja) 2022-12-01 2024-06-13 株式会社ディスコ 樹脂シート
DE102023203941A1 (de) * 2023-04-27 2024-10-31 Carl Zeiss Smt Gmbh Verfahren zur Nachbearbeitung und zur Handhabung von MEMS-Chips

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Also Published As

Publication number Publication date
DE102017208405B4 (de) 2024-05-02
KR102105114B1 (ko) 2020-04-27
DE102017208405A1 (de) 2018-11-22
TWI683392B (zh) 2020-01-21
US20180337141A1 (en) 2018-11-22
JP2018195805A (ja) 2018-12-06
JP2020113778A (ja) 2020-07-27
SG10201803494SA (en) 2018-12-28
US20210151390A1 (en) 2021-05-20
US11637074B2 (en) 2023-04-25
KR20180127230A (ko) 2018-11-28
CN108933098A (zh) 2018-12-04
CN108933098B (zh) 2024-12-24
JP2019169727A (ja) 2019-10-03
TW201909333A (zh) 2019-03-01
US11784138B2 (en) 2023-10-10
JP6740542B2 (ja) 2020-08-19

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