DE102017115533A1 - Raumtemperatur-Druckverfahren zur Herstellung einer PV-Schichtfolge und verfahrensgemäß erhaltene PV-Schichtfolge - Google Patents
Raumtemperatur-Druckverfahren zur Herstellung einer PV-Schichtfolge und verfahrensgemäß erhaltene PV-Schichtfolge Download PDFInfo
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- DE102017115533A1 DE102017115533A1 DE102017115533.3A DE102017115533A DE102017115533A1 DE 102017115533 A1 DE102017115533 A1 DE 102017115533A1 DE 102017115533 A DE102017115533 A DE 102017115533A DE 102017115533 A1 DE102017115533 A1 DE 102017115533A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
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- H—ELECTRICITY
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
- H10F77/1227—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC characterised by the dopants
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/1625—Semiconductor nanoparticles embedded in semiconductor matrix
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Photovoltaic Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Hybrid Cells (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016008383.2 | 2016-07-12 | ||
| DE102016008383 | 2016-07-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102017115533A1 true DE102017115533A1 (de) | 2018-01-18 |
Family
ID=59558148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102017115533.3A Withdrawn DE102017115533A1 (de) | 2016-07-12 | 2017-07-11 | Raumtemperatur-Druckverfahren zur Herstellung einer PV-Schichtfolge und verfahrensgemäß erhaltene PV-Schichtfolge |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US11404592B2 (enExample) |
| EP (1) | EP3523829B1 (enExample) |
| JP (2) | JP2019522382A (enExample) |
| CN (1) | CN109743886B (enExample) |
| BR (1) | BR112019000712B1 (enExample) |
| DE (1) | DE102017115533A1 (enExample) |
| PL (1) | PL3523829T3 (enExample) |
| RU (1) | RU2750998C2 (enExample) |
| WO (1) | WO2018010727A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020003811A1 (de) | 2020-06-25 | 2021-12-30 | Dynamic Solar Systems Ag | Fußbodenheizungs-System mit verbessertem Schichtaufbau |
| US20230022793A1 (en) | 2021-07-21 | 2023-01-26 | Steve Kohn | Hemp paper bags |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1221651B (de) | 1962-03-12 | 1966-07-28 | Johnson & Son Inc S C | Druckfarbe |
| DE1907582A1 (de) | 1968-02-14 | 1969-08-28 | Colores Y Derivados S A | Verfahren zur Herstellung eines nicht abfaerbenden bzw.nicht abdruckenden Stoffes als Druckfarbenzusatz |
| DE2012651A1 (de) | 1969-03-13 | 1970-09-17 | Minnesota Mining And Manufacturing Co., St. Paul, Minn. (V.St.A.) | Druckvorrichtung und Druckverfahren |
| DE2017326A1 (en) | 1969-12-03 | 1972-02-17 | Arthur D Little, Inc , Cambridge, Mass (V St A) | High gloss paper/board - by applying coating contg minute vesicles |
| GB1449821A (en) | 1972-10-27 | 1976-09-15 | Ici Ltd | Aqueous compositions |
| DE2733853A1 (de) | 1976-08-05 | 1978-02-09 | Marcel Hebbelinck | Verfahren zum bedrucken von vinylkunststoffen, druckfarbe zur durchfuehrung des erfindungsgemaessen verfahrens und damit bedruckte erzeugnisse |
| DE2529043B2 (de) | 1975-06-30 | 1978-07-20 | Kissel & Wolf Gmbh, 6908 Wiesloch | Verfahren und Druckfarbe zur Herstellung von Blindenschrift-Drucken |
| DE3447713A1 (de) | 1983-12-28 | 1985-07-11 | Sakata Shokai Ltd., Osaka | Waessrige ueberzugsmasse und ihre verwendung in einem druckverfahren |
| DE2345493C2 (de) | 1972-09-13 | 1986-01-02 | The Dow Chemical Co., Midland, Mich. | Binderzusammensetzungen für Druckfarben und Überzugsmittel mit zyklischen Sulfoniumzwitterionen und carboxylgruppenhaltigen Polymeren |
| DE4018013A1 (de) | 1990-06-05 | 1991-12-12 | Siemens Ag | Verfahren zur herstellung von elektrodenstrukturen fuer solarzellen |
| JPH04368887A (ja) | 1991-06-17 | 1992-12-21 | Sharp Corp | プリント基板印刷用スクリーン |
| JPH061852A (ja) | 1992-06-19 | 1994-01-11 | Toyo Ink Mfg Co Ltd | 水性顔料分散体 |
| DE4322999A1 (de) | 1993-07-09 | 1995-01-12 | Henkel Kgaa | Anionisch basierte wässrige Druckfarben mit verbesserter Deinkbarkeit |
| DE3936666C2 (de) | 1988-11-04 | 1995-08-10 | Canon Kk | Geschichtete photovoltaische Vorrichtung mit Antireflexschicht |
| DE19720004C1 (de) | 1997-05-13 | 1999-02-04 | Pelikan Produktions Ag | Tintenstrahl-Druckverfahren und Tintenset für den Mehrfarben-Tintenstrahldruck |
| DE10004997A1 (de) | 1999-03-19 | 2000-09-21 | Heidelberger Druckmasch Ag | Druckverfahren und -maschine |
| WO2014019560A1 (de) | 2012-08-02 | 2014-02-06 | Dynamic Solar Systems Inc. | Verbesserte schichtsolarzelle |
| DE102016002213A1 (de) | 2015-02-26 | 2016-11-03 | Dynamic Solar Systems Ag | PV-Schichtfolge erhalten durch ein Raumtemperatur-Verfahren und Raumtemperatur-Verfahren zur Herstellung einer PV-Schichtfolge |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4614835A (en) * | 1983-12-15 | 1986-09-30 | Texas Instruments Incorporated | Photovoltaic solar arrays using silicon microparticles |
| JP2641800B2 (ja) * | 1990-11-30 | 1997-08-20 | シャープ株式会社 | 太陽電池及びその製造方法 |
| CA2239626C (en) * | 1996-10-09 | 2003-09-02 | Josuke Nakata | Semiconductor device |
| JPH11317534A (ja) | 1998-04-30 | 1999-11-16 | Konica Corp | 太陽電池及びその製造方法 |
| US6689950B2 (en) * | 2001-04-27 | 2004-02-10 | The Boeing Company | Paint solar cell and its fabrication |
| US8384630B2 (en) * | 2007-05-31 | 2013-02-26 | Nthdegree Technologies Worldwide Inc | Light emitting, photovoltaic or other electronic apparatus and system |
| US8133768B2 (en) * | 2007-05-31 | 2012-03-13 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
| WO2010062708A2 (en) | 2008-10-30 | 2010-06-03 | Hak Fei Poon | Hybrid transparent conductive electrodes |
| TWI528604B (zh) * | 2009-09-15 | 2016-04-01 | 無限科技全球公司 | 發光、光伏或其它電子裝置及系統 |
| JP5302345B2 (ja) * | 2011-02-09 | 2013-10-02 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR101508597B1 (ko) * | 2011-12-19 | 2015-04-07 | 엔티에이치 디그리 테크놀로지스 월드와이드 인코포레이티드 | 광전지 패널을 제조하기 위한 전체 대기압 프린팅 방법에서 그레이디드 인덱스 렌즈의 제조 |
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- 2017-07-11 JP JP2019523162A patent/JP2019522382A/ja active Pending
- 2017-07-11 PL PL17749113.1T patent/PL3523829T3/pl unknown
- 2017-07-11 DE DE102017115533.3A patent/DE102017115533A1/de not_active Withdrawn
- 2017-07-11 US US16/317,223 patent/US11404592B2/en active Active
- 2017-07-11 WO PCT/DE2017/100572 patent/WO2018010727A1/de not_active Ceased
- 2017-07-11 BR BR112019000712-1A patent/BR112019000712B1/pt active IP Right Grant
- 2017-07-11 CN CN201780055564.7A patent/CN109743886B/zh active Active
- 2017-07-11 RU RU2019103581A patent/RU2750998C2/ru active
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Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1221651B (de) | 1962-03-12 | 1966-07-28 | Johnson & Son Inc S C | Druckfarbe |
| DE1907582A1 (de) | 1968-02-14 | 1969-08-28 | Colores Y Derivados S A | Verfahren zur Herstellung eines nicht abfaerbenden bzw.nicht abdruckenden Stoffes als Druckfarbenzusatz |
| DE2012651A1 (de) | 1969-03-13 | 1970-09-17 | Minnesota Mining And Manufacturing Co., St. Paul, Minn. (V.St.A.) | Druckvorrichtung und Druckverfahren |
| DE2017326A1 (en) | 1969-12-03 | 1972-02-17 | Arthur D Little, Inc , Cambridge, Mass (V St A) | High gloss paper/board - by applying coating contg minute vesicles |
| DE2345493C2 (de) | 1972-09-13 | 1986-01-02 | The Dow Chemical Co., Midland, Mich. | Binderzusammensetzungen für Druckfarben und Überzugsmittel mit zyklischen Sulfoniumzwitterionen und carboxylgruppenhaltigen Polymeren |
| GB1449821A (en) | 1972-10-27 | 1976-09-15 | Ici Ltd | Aqueous compositions |
| DE2529043B2 (de) | 1975-06-30 | 1978-07-20 | Kissel & Wolf Gmbh, 6908 Wiesloch | Verfahren und Druckfarbe zur Herstellung von Blindenschrift-Drucken |
| DE2733853A1 (de) | 1976-08-05 | 1978-02-09 | Marcel Hebbelinck | Verfahren zum bedrucken von vinylkunststoffen, druckfarbe zur durchfuehrung des erfindungsgemaessen verfahrens und damit bedruckte erzeugnisse |
| DE3447713A1 (de) | 1983-12-28 | 1985-07-11 | Sakata Shokai Ltd., Osaka | Waessrige ueberzugsmasse und ihre verwendung in einem druckverfahren |
| DE3936666C2 (de) | 1988-11-04 | 1995-08-10 | Canon Kk | Geschichtete photovoltaische Vorrichtung mit Antireflexschicht |
| DE4018013A1 (de) | 1990-06-05 | 1991-12-12 | Siemens Ag | Verfahren zur herstellung von elektrodenstrukturen fuer solarzellen |
| JPH04368887A (ja) | 1991-06-17 | 1992-12-21 | Sharp Corp | プリント基板印刷用スクリーン |
| JPH061852A (ja) | 1992-06-19 | 1994-01-11 | Toyo Ink Mfg Co Ltd | 水性顔料分散体 |
| DE4322999A1 (de) | 1993-07-09 | 1995-01-12 | Henkel Kgaa | Anionisch basierte wässrige Druckfarben mit verbesserter Deinkbarkeit |
| DE19720004C1 (de) | 1997-05-13 | 1999-02-04 | Pelikan Produktions Ag | Tintenstrahl-Druckverfahren und Tintenset für den Mehrfarben-Tintenstrahldruck |
| DE10004997A1 (de) | 1999-03-19 | 2000-09-21 | Heidelberger Druckmasch Ag | Druckverfahren und -maschine |
| WO2014019560A1 (de) | 2012-08-02 | 2014-02-06 | Dynamic Solar Systems Inc. | Verbesserte schichtsolarzelle |
| DE102016002213A1 (de) | 2015-02-26 | 2016-11-03 | Dynamic Solar Systems Ag | PV-Schichtfolge erhalten durch ein Raumtemperatur-Verfahren und Raumtemperatur-Verfahren zur Herstellung einer PV-Schichtfolge |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7500092B2 (ja) | 2024-06-17 |
| WO2018010727A1 (de) | 2018-01-18 |
| CN109743886B (zh) | 2022-11-22 |
| PL3523829T3 (pl) | 2024-03-18 |
| US20190280135A1 (en) | 2019-09-12 |
| EP3523829C0 (de) | 2023-09-06 |
| JP2022163082A (ja) | 2022-10-25 |
| RU2019103581A (ru) | 2020-08-12 |
| BR112019000712B1 (pt) | 2023-02-28 |
| US11404592B2 (en) | 2022-08-02 |
| BR112019000712A2 (pt) | 2019-05-14 |
| CN109743886A (zh) | 2019-05-10 |
| RU2750998C2 (ru) | 2021-07-07 |
| EP3523829B1 (de) | 2023-09-06 |
| EP3523829A1 (de) | 2019-08-14 |
| RU2019103581A3 (enExample) | 2020-08-25 |
| JP2019522382A (ja) | 2019-08-08 |
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