CN109743886B - 用于制造pv层序列的室温印刷方法以及根据该方法获得的pv层序列 - Google Patents

用于制造pv层序列的室温印刷方法以及根据该方法获得的pv层序列 Download PDF

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CN109743886B
CN109743886B CN201780055564.7A CN201780055564A CN109743886B CN 109743886 B CN109743886 B CN 109743886B CN 201780055564 A CN201780055564 A CN 201780055564A CN 109743886 B CN109743886 B CN 109743886B
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CN109743886A (zh
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丹尼尔·林德
帕特里克·林德
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Dynamic Solar Systems AG
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H10F19/90Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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CN201780055564.7A 2016-07-12 2017-07-11 用于制造pv层序列的室温印刷方法以及根据该方法获得的pv层序列 Active CN109743886B (zh)

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DE102016008383 2016-07-12
DE102016008383.2 2016-07-12
PCT/DE2017/100572 WO2018010727A1 (de) 2016-07-12 2017-07-11 Raumtemperatur-druckverfahren zur herstellung einer pv-schichtfolge und verfahrensgemäss erhaltene pv-schichtfolge

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CN109743886B true CN109743886B (zh) 2022-11-22

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EP (1) EP3523829B1 (enExample)
JP (2) JP2019522382A (enExample)
CN (1) CN109743886B (enExample)
BR (1) BR112019000712B1 (enExample)
DE (1) DE102017115533A1 (enExample)
PL (1) PL3523829T3 (enExample)
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DE102020003811A1 (de) 2020-06-25 2021-12-30 Dynamic Solar Systems Ag Fußbodenheizungs-System mit verbessertem Schichtaufbau
US20230022793A1 (en) 2021-07-21 2023-01-26 Steve Kohn Hemp paper bags

Citations (1)

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EP0866506A1 (en) * 1996-10-09 1998-09-23 Josuke Nakata Semiconductor device

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WO2018010727A1 (de) 2018-01-18
EP3523829A1 (de) 2019-08-14
BR112019000712A2 (pt) 2019-05-14
JP2019522382A (ja) 2019-08-08
BR112019000712B1 (pt) 2023-02-28
RU2019103581A3 (enExample) 2020-08-25
RU2750998C2 (ru) 2021-07-07
JP2022163082A (ja) 2022-10-25
DE102017115533A1 (de) 2018-01-18
EP3523829C0 (de) 2023-09-06
JP7500092B2 (ja) 2024-06-17
US11404592B2 (en) 2022-08-02
RU2019103581A (ru) 2020-08-12
EP3523829B1 (de) 2023-09-06
US20190280135A1 (en) 2019-09-12
PL3523829T3 (pl) 2024-03-18
CN109743886A (zh) 2019-05-10

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