JP2019522382A - Ｐｖ層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるｐｖ層シーケンス - Google Patents

Ｐｖ層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるｐｖ層シーケンス Download PDF

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JP2019522382A
JP2019522382A JP2019523162A JP2019523162A JP2019522382A JP 2019522382 A JP2019522382 A JP 2019522382A JP 2019523162 A JP2019523162 A JP 2019523162A JP 2019523162 A JP2019523162 A JP 2019523162A JP 2019522382 A JP2019522382 A JP 2019522382A
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JP2019522382A5 (enExample
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リンダー，ダニエル
リンダー，パトリック
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Dynamic Solar Systems AG
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Dynamic Solar Systems AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H10F77/1227—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
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    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/1625—Semiconductor nanoparticles embedded in semiconductor matrix
    • H—ELECTRICITY
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    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Printing Methods (AREA)
  • Hybrid Cells (AREA)
JP2019523162A 2016-07-12 2017-07-11 Ｐｖ層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるｐｖ層シーケンス Pending JP2019522382A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022117478A JP7500092B2 (ja) 2016-07-12 2022-07-22 Ｐｖ層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるｐｖ層シーケンス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016008383 2016-07-12
DE102016008383.2 2016-07-12
PCT/DE2017/100572 WO2018010727A1 (de) 2016-07-12 2017-07-11 Raumtemperatur-druckverfahren zur herstellung einer pv-schichtfolge und verfahrensgemäss erhaltene pv-schichtfolge

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JP2022117478A Division JP7500092B2 (ja) 2016-07-12 2022-07-22 Ｐｖ層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるｐｖ層シーケンス

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JP2019522382A true JP2019522382A (ja) 2019-08-08
JP2019522382A5 JP2019522382A5 (enExample) 2020-08-20

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JP2019523162A Pending JP2019522382A (ja) 2016-07-12 2017-07-11 Ｐｖ層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるｐｖ層シーケンス
JP2022117478A Active JP7500092B2 (ja) 2016-07-12 2022-07-22 Ｐｖ層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるｐｖ層シーケンス

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US (1) US11404592B2 (enExample)
EP (1) EP3523829B1 (enExample)
JP (2) JP2019522382A (enExample)
CN (1) CN109743886B (enExample)
BR (1) BR112019000712B1 (enExample)
DE (1) DE102017115533A1 (enExample)
PL (1) PL3523829T3 (enExample)
RU (1) RU2750998C2 (enExample)
WO (1) WO2018010727A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020003811A1 (de) 2020-06-25 2021-12-30 Dynamic Solar Systems Ag Fußbodenheizungs-System mit verbessertem Schichtaufbau
US20230022793A1 (en) 2021-07-21 2023-01-26 Steve Kohn Hemp paper bags

Citations (5)

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JPH04207085A (ja) * 1990-11-30 1992-07-29 Sharp Corp 太陽電池及びその製造方法
WO1998015983A1 (fr) * 1996-10-09 1998-04-16 Josuke Nakata Dispositif a semi-conducteurs
JPH11317534A (ja) * 1998-04-30 1999-11-16 Konica Corp 太陽電池及びその製造方法
JP2012507872A (ja) * 2008-10-30 2012-03-29 フェイ プーン、ハク ハイブリッド透明導電性電極
US20130153027A1 (en) * 2011-12-19 2013-06-20 Nthdegree Technologies Worldwide Inc. Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels

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DE2017326A1 (en) 1969-12-03 1972-02-17 Arthur D Little, Inc , Cambridge, Mass (V St A) High gloss paper/board - by applying coating contg minute vesicles
US3804797A (en) 1972-09-13 1974-04-16 Dow Chemical Co Coating compositions comprising cyclic sulfonium zwitterions with carboxy containing polymers
GB1449821A (en) 1972-10-27 1976-09-15 Ici Ltd Aqueous compositions
DE2529043C3 (de) 1975-06-30 1979-03-29 Kissel & Wolf Gmbh, 6908 Wiesloch Verfahren und Druckfarbe zur Herstellung von Blindenschrift-Drucken
LU75539A1 (enExample) 1976-08-05 1978-02-13
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
JPS60141590A (ja) 1983-12-28 1985-07-26 Sakata Shokai Ltd 水性オ−バ−コ−テイング用組成物およびそれを用いた印刷方法
JP2717583B2 (ja) 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
DE4018013A1 (de) 1990-06-05 1991-12-12 Siemens Ag Verfahren zur herstellung von elektrodenstrukturen fuer solarzellen
JPH04368887A (ja) 1991-06-17 1992-12-21 Sharp Corp プリント基板印刷用スクリーン
JPH061852A (ja) 1992-06-19 1994-01-11 Toyo Ink Mfg Co Ltd 水性顔料分散体
DE4322999A1 (de) 1993-07-09 1995-01-12 Henkel Kgaa Anionisch basierte wässrige Druckfarben mit verbesserter Deinkbarkeit
DE19720004C1 (de) 1997-05-13 1999-02-04 Pelikan Produktions Ag Tintenstrahl-Druckverfahren und Tintenset für den Mehrfarben-Tintenstrahldruck
DE10004997A1 (de) 1999-03-19 2000-09-21 Heidelberger Druckmasch Ag Druckverfahren und -maschine
US6689950B2 (en) * 2001-04-27 2004-02-10 The Boeing Company Paint solar cell and its fabrication
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JP5302345B2 (ja) * 2011-02-09 2013-10-02 株式会社ジャパンディスプレイ 表示装置
WO2014019560A1 (de) 2012-08-02 2014-02-06 Dynamic Solar Systems Inc. Verbesserte schichtsolarzelle
CN107533950B (zh) 2015-02-26 2022-02-11 动态太阳能系统公司 用于生产电工薄层的室温方法及按照所述方法获得的薄层序列

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04207085A (ja) * 1990-11-30 1992-07-29 Sharp Corp 太陽電池及びその製造方法
WO1998015983A1 (fr) * 1996-10-09 1998-04-16 Josuke Nakata Dispositif a semi-conducteurs
JPH11317534A (ja) * 1998-04-30 1999-11-16 Konica Corp 太陽電池及びその製造方法
JP2012507872A (ja) * 2008-10-30 2012-03-29 フェイ プーン、ハク ハイブリッド透明導電性電極
US20130153027A1 (en) * 2011-12-19 2013-06-20 Nthdegree Technologies Worldwide Inc. Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels

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WO2018010727A1 (de) 2018-01-18
EP3523829A1 (de) 2019-08-14
BR112019000712A2 (pt) 2019-05-14
BR112019000712B1 (pt) 2023-02-28
RU2019103581A3 (enExample) 2020-08-25
CN109743886B (zh) 2022-11-22
RU2750998C2 (ru) 2021-07-07
JP2022163082A (ja) 2022-10-25
DE102017115533A1 (de) 2018-01-18
EP3523829C0 (de) 2023-09-06
JP7500092B2 (ja) 2024-06-17
US11404592B2 (en) 2022-08-02
RU2019103581A (ru) 2020-08-12
EP3523829B1 (de) 2023-09-06
US20190280135A1 (en) 2019-09-12
PL3523829T3 (pl) 2024-03-18
CN109743886A (zh) 2019-05-10

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