RU2750998C2 - Способ изготовления последовательности фотогальванических слоев методом печати при комнатной температуре и последовательность фотогальванических слоев, полученная данным способом - Google Patents
Способ изготовления последовательности фотогальванических слоев методом печати при комнатной температуре и последовательность фотогальванических слоев, полученная данным способом Download PDFInfo
- Publication number
- RU2750998C2 RU2750998C2 RU2019103581A RU2019103581A RU2750998C2 RU 2750998 C2 RU2750998 C2 RU 2750998C2 RU 2019103581 A RU2019103581 A RU 2019103581A RU 2019103581 A RU2019103581 A RU 2019103581A RU 2750998 C2 RU2750998 C2 RU 2750998C2
- Authority
- RU
- Russia
- Prior art keywords
- particles
- areas
- photovoltaic
- subjected
- sequence
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000007639 printing Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000002245 particle Substances 0.000 claims abstract description 93
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000009467 reduction Effects 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 13
- 230000003750 conditioning effect Effects 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 61
- 230000001143 conditioned effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 230000002829 reductive effect Effects 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 244000025254 Cannabis sativa Species 0.000 claims description 4
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 claims description 4
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 235000009120 camo Nutrition 0.000 claims description 4
- 235000005607 chanvre indien Nutrition 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000011487 hemp Substances 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 abstract description 3
- 239000007858 starting material Substances 0.000 abstract description 3
- 239000007795 chemical reaction product Substances 0.000 abstract description 2
- 239000010954 inorganic particle Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 238000006722 reduction reaction Methods 0.000 description 10
- 239000012071 phase Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000003607 modifier Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000008346 aqueous phase Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 206010063493 Premature ageing Diseases 0.000 description 1
- 208000032038 Premature aging Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
- H10F77/1227—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/1625—Semiconductor nanoparticles embedded in semiconductor matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Photovoltaic Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Printing Methods (AREA)
- Hybrid Cells (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016008383 | 2016-07-12 | ||
| DE102016008383.2 | 2016-07-12 | ||
| PCT/DE2017/100572 WO2018010727A1 (de) | 2016-07-12 | 2017-07-11 | Raumtemperatur-druckverfahren zur herstellung einer pv-schichtfolge und verfahrensgemäss erhaltene pv-schichtfolge |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| RU2019103581A RU2019103581A (ru) | 2020-08-12 |
| RU2019103581A3 RU2019103581A3 (enExample) | 2020-08-25 |
| RU2750998C2 true RU2750998C2 (ru) | 2021-07-07 |
Family
ID=59558148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2019103581A RU2750998C2 (ru) | 2016-07-12 | 2017-07-11 | Способ изготовления последовательности фотогальванических слоев методом печати при комнатной температуре и последовательность фотогальванических слоев, полученная данным способом |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US11404592B2 (enExample) |
| EP (1) | EP3523829B1 (enExample) |
| JP (2) | JP2019522382A (enExample) |
| CN (1) | CN109743886B (enExample) |
| BR (1) | BR112019000712B1 (enExample) |
| DE (1) | DE102017115533A1 (enExample) |
| PL (1) | PL3523829T3 (enExample) |
| RU (1) | RU2750998C2 (enExample) |
| WO (1) | WO2018010727A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020003811A1 (de) | 2020-06-25 | 2021-12-30 | Dynamic Solar Systems Ag | Fußbodenheizungs-System mit verbessertem Schichtaufbau |
| US20230022793A1 (en) | 2021-07-21 | 2023-01-26 | Steve Kohn | Hemp paper bags |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100167441A1 (en) * | 2007-05-31 | 2010-07-01 | Nthdegree Technologies Worldwide Inc. | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System |
| US20130153027A1 (en) * | 2011-12-19 | 2013-06-20 | Nthdegree Technologies Worldwide Inc. | Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels |
| US9274366B2 (en) * | 2011-02-09 | 2016-03-01 | Japan Display Inc. | Display device |
| US20160126417A1 (en) * | 2007-05-31 | 2016-05-05 | Nthdegree Technologies Worldwide Inc. | Light Emitting, Photovoltaic Or Other Electronic Apparatus and System |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL286090A (enExample) | 1962-03-12 | |||
| US3633502A (en) | 1969-03-13 | 1972-01-11 | Minnesota Mining & Mfg | Intaglio printing block with reservoir for powdered ink |
| DE2017326A1 (en) | 1969-12-03 | 1972-02-17 | Arthur D Little, Inc , Cambridge, Mass (V St A) | High gloss paper/board - by applying coating contg minute vesicles |
| US3804797A (en) | 1972-09-13 | 1974-04-16 | Dow Chemical Co | Coating compositions comprising cyclic sulfonium zwitterions with carboxy containing polymers |
| GB1449821A (en) | 1972-10-27 | 1976-09-15 | Ici Ltd | Aqueous compositions |
| DE2529043C3 (de) | 1975-06-30 | 1979-03-29 | Kissel & Wolf Gmbh, 6908 Wiesloch | Verfahren und Druckfarbe zur Herstellung von Blindenschrift-Drucken |
| LU75539A1 (enExample) | 1976-08-05 | 1978-02-13 | ||
| US4614835A (en) * | 1983-12-15 | 1986-09-30 | Texas Instruments Incorporated | Photovoltaic solar arrays using silicon microparticles |
| JPS60141590A (ja) | 1983-12-28 | 1985-07-26 | Sakata Shokai Ltd | 水性オ−バ−コ−テイング用組成物およびそれを用いた印刷方法 |
| JP2717583B2 (ja) | 1988-11-04 | 1998-02-18 | キヤノン株式会社 | 積層型光起電力素子 |
| DE4018013A1 (de) | 1990-06-05 | 1991-12-12 | Siemens Ag | Verfahren zur herstellung von elektrodenstrukturen fuer solarzellen |
| JP2641800B2 (ja) * | 1990-11-30 | 1997-08-20 | シャープ株式会社 | 太陽電池及びその製造方法 |
| JPH04368887A (ja) | 1991-06-17 | 1992-12-21 | Sharp Corp | プリント基板印刷用スクリーン |
| JPH061852A (ja) | 1992-06-19 | 1994-01-11 | Toyo Ink Mfg Co Ltd | 水性顔料分散体 |
| DE4322999A1 (de) | 1993-07-09 | 1995-01-12 | Henkel Kgaa | Anionisch basierte wässrige Druckfarben mit verbesserter Deinkbarkeit |
| CA2239626C (en) * | 1996-10-09 | 2003-09-02 | Josuke Nakata | Semiconductor device |
| DE19720004C1 (de) | 1997-05-13 | 1999-02-04 | Pelikan Produktions Ag | Tintenstrahl-Druckverfahren und Tintenset für den Mehrfarben-Tintenstrahldruck |
| JPH11317534A (ja) * | 1998-04-30 | 1999-11-16 | Konica Corp | 太陽電池及びその製造方法 |
| DE10004997A1 (de) | 1999-03-19 | 2000-09-21 | Heidelberger Druckmasch Ag | Druckverfahren und -maschine |
| US6689950B2 (en) * | 2001-04-27 | 2004-02-10 | The Boeing Company | Paint solar cell and its fabrication |
| JP2012507872A (ja) * | 2008-10-30 | 2012-03-29 | フェイ プーン、ハク | ハイブリッド透明導電性電極 |
| TWI528604B (zh) * | 2009-09-15 | 2016-04-01 | 無限科技全球公司 | 發光、光伏或其它電子裝置及系統 |
| WO2014019560A1 (de) | 2012-08-02 | 2014-02-06 | Dynamic Solar Systems Inc. | Verbesserte schichtsolarzelle |
| CN107533950B (zh) | 2015-02-26 | 2022-02-11 | 动态太阳能系统公司 | 用于生产电工薄层的室温方法及按照所述方法获得的薄层序列 |
-
2017
- 2017-07-11 DE DE102017115533.3A patent/DE102017115533A1/de not_active Withdrawn
- 2017-07-11 BR BR112019000712-1A patent/BR112019000712B1/pt active IP Right Grant
- 2017-07-11 CN CN201780055564.7A patent/CN109743886B/zh active Active
- 2017-07-11 US US16/317,223 patent/US11404592B2/en active Active
- 2017-07-11 JP JP2019523162A patent/JP2019522382A/ja active Pending
- 2017-07-11 EP EP17749113.1A patent/EP3523829B1/de active Active
- 2017-07-11 RU RU2019103581A patent/RU2750998C2/ru active
- 2017-07-11 PL PL17749113.1T patent/PL3523829T3/pl unknown
- 2017-07-11 WO PCT/DE2017/100572 patent/WO2018010727A1/de not_active Ceased
-
2022
- 2022-07-22 JP JP2022117478A patent/JP7500092B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100167441A1 (en) * | 2007-05-31 | 2010-07-01 | Nthdegree Technologies Worldwide Inc. | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System |
| US20160126417A1 (en) * | 2007-05-31 | 2016-05-05 | Nthdegree Technologies Worldwide Inc. | Light Emitting, Photovoltaic Or Other Electronic Apparatus and System |
| US9274366B2 (en) * | 2011-02-09 | 2016-03-01 | Japan Display Inc. | Display device |
| US20130153027A1 (en) * | 2011-12-19 | 2013-06-20 | Nthdegree Technologies Worldwide Inc. | Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018010727A1 (de) | 2018-01-18 |
| EP3523829A1 (de) | 2019-08-14 |
| BR112019000712A2 (pt) | 2019-05-14 |
| JP2019522382A (ja) | 2019-08-08 |
| BR112019000712B1 (pt) | 2023-02-28 |
| RU2019103581A3 (enExample) | 2020-08-25 |
| CN109743886B (zh) | 2022-11-22 |
| JP2022163082A (ja) | 2022-10-25 |
| DE102017115533A1 (de) | 2018-01-18 |
| EP3523829C0 (de) | 2023-09-06 |
| JP7500092B2 (ja) | 2024-06-17 |
| US11404592B2 (en) | 2022-08-02 |
| RU2019103581A (ru) | 2020-08-12 |
| EP3523829B1 (de) | 2023-09-06 |
| US20190280135A1 (en) | 2019-09-12 |
| PL3523829T3 (pl) | 2024-03-18 |
| CN109743886A (zh) | 2019-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | High phase stability in CsPbI3 enabled by Pb–I octahedra anchors for efficient inorganic perovskite photovoltaics | |
| Lai et al. | Piezo-phototronic effect enhanced photodetector based on CH3NH3PbI3 single crystals | |
| Sadasivuni et al. | Flexible, biodegradable and recyclable solar cells: a review | |
| Chang et al. | Enhancing the photovoltaic performance of planar heterojunction perovskite solar cells by doping the perovskite layer with alkali metal ions | |
| Yang et al. | Tuning of the contact properties for high-efficiency Si/PEDOT: PSS heterojunction solar cells | |
| Dunlap-Shohl et al. | Interfacial effects during rapid lamination within MAPbI3 thin films and solar cells | |
| Malizia et al. | Formation of ap–n heterojunction on GaP photocathodes for H 2 production providing an open-circuit voltage of 710 mV | |
| US8691620B2 (en) | Method for preparation of front electrode for solar cell of high efficiency | |
| Chen et al. | Methylammonium, formamidinium and ethylenediamine mixed triple-cation perovskite solar cells with high efficiency and remarkable stability | |
| Taheri et al. | Graphene-engineered automated sprayed mesoscopic structure for perovskite device scaling-up | |
| KR20230147195A (ko) | 페로브스카이트 기재 다중-접합 태양 전지 및 이를 제조하기 위한 방법 | |
| Lee et al. | Efficient perovskite solar cells with negligible hysteresis achieved by sol–gel-driven spinel nickel cobalt oxide thin films as the hole transport layer | |
| US20100101624A1 (en) | Photovoltaic module and modular panel made with it to collect radiant solar energy | |
| Roger et al. | Laminated monolithic perovskite/silicon tandem photovoltaics | |
| KR20080105908A (ko) | 양자점을 이용한 고효율 태양전지 및 이의 제조방법 | |
| US20160293781A1 (en) | Three dimensional anti-reflection nanocone film | |
| JP7500092B2 (ja) | Ｐｖ層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるｐｖ層シーケンス | |
| Qin et al. | Fabricating high-quality Cu2O photocathode by magnetron sputtering: insight into defect states and charge carrier collection in Cu2O | |
| TW202018733A (zh) | 用於改良金屬粒子層的材料屬性的具有基於金屬的添加劑的印刷漿料 | |
| US20130074932A1 (en) | Solar cell package structure | |
| Wang et al. | A 2D/3D heterojunction engineered for carbon-based hole-transport-layer-free perovskite solar cells | |
| Daiguji et al. | All-solution-processed inorganic CsPbBr 3 solar cells and their bifacial-irradiation functions | |
| Li et al. | Flexible optoelectronic devices based on hybrid perovskites | |
| US20180261708A1 (en) | Back contact type perovskite photoelectric conversion element | |
| TW201025646A (en) | Semiconductor device and method of producing a semiconductor device |