Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02587—Structure
  • H01L21/0259—Microstructure
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02587—Structure
  • H01L21/0259—Microstructure
  • H01L21/02601—Nanoparticles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/02623—Liquid deposition
  • H01L21/02628—Liquid deposition using solutions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
  • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
  • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/121—The active layers comprising only Group IV materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/121—The active layers comprising only Group IV materials
  • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
• • H—ELECTRICITY
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  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/12—Active materials
  • H10F77/122—Active materials comprising only Group IV materials
  • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/12—Active materials
  • H10F77/122—Active materials comprising only Group IV materials
  • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
  • H10F77/1227—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC characterised by the dopants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
  • H10F77/147—Shapes of bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
  • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
  • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
  • H10F77/1625—Semiconductor nanoparticles embedded in semiconductor matrix
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
  • H10F77/169—Thin semiconductor films on metallic or insulating substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/206—Electrodes for devices having potential barriers
  • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/547—Monocrystalline silicon PV cells

Definitions

• Such thin films are fractions of microns to several hundred microns thick and are used in the generation, processing, control, regulation, measurement, and transmission of power.
• the present invention relies on photovoltaic electrical systems in which power is generated from photons.
• 'Photovoltaic' as well as' Photovoltaic 'is - as also below - often simply abbreviated to' PV.
• the Applicant has been working with several related companies in the PV sector for some time.
• the present invention relates to a room temperature method for producing a PV layer sequence and the PV layer sequence according to the method according to the preambles of the independent claims.
• a room temperature method for producing a PV layer sequence and the PV layer sequence according to the method according to the preambles of the independent claims As an essential component of the present invention, the production of inorganic core components has been found at room temperature with aqueous dispersions and solutions:
• Inorganic core components can be stored much longer than corresponding organic systems.
• Organic PV coatings last for a few days to months, while inorganic, PV-active components always show at least 90% of their initial performance in standardized climate chamber tests with up to 30 years of simulated lifetime; in the corresponding tests, organic adjuvants and additives such as polymeric investment material of the glass-glass support or the organic fiber composite support of the PV-active thin-film combination failed, but the current-generating core component with its metallic leads did not fail to meet heavily weathered and unsightly overall product still has the desired function and delivered electricity.
• the inventors attribute this to the inorganic nature of the core components of the PV layer sequence, which naturally have no polymers or organic hydrocarbon compounds.
• Room temperature methods could be enabled by reactive systems that introduce chemical reaction energy to form and adjust the layers.
• 'Room temperature' includes the usual temperature ranges of an industrial production, which can be between a few degrees Celsius above zero up to 80 degrees Celsius, depending on the location of a factory. It was found that the reactions proceeding at room temperature provide significantly broader and sometimes extremely different band gap structures compared to processes with known compaction and / or sintering step. Thus, for the first time, a layer structure could be generated which was able to specifically convert contact heat radiation from warm water into electricity with a narrow wavelength range window.
• Aqueous dispersions and solutions are not established in the PV market.
• the usual and in the production demanding Si wafers tolerate no moisture.
• providers of conductive pastes and conductive electrode applied masses are often faced with the requirement to provide completely anhydrous systems, which can be finally compacted and sintered in vacuum systems at least 150 ° C parallel to coating or vapor deposition steps.
• the inventors conclude that known printing systems and printing solutions based on aqueous pastes are not used here.
• PV active semiconductors In combination with the measure 'room temperature', however, such old methods can unexpectedly be used: PV active semiconductors, metal-nonmetal compounds, and metal-metal chalcogenide, as well as metal-metal halide compounds, have been found to be sufficiently stable at temperatures less than 100 degrees Celsius, even when incorporated and printed in aqueous dispersions or solutions.
• Known printing systems and printing solutions here include measures, features and adjuvants and adjuvants as they are listed in the aforementioned applications and also, for example, in the printed technical documents DE 122 1651 A, DE 2012 651 B, DE 2529 043 B2, DE 10004997 A, DE 1 907 582 B, DE 2 017 326 A, DE 23 45 493 C2, GB 1 449 821 A, DE 27 33 853 A, DE 34 47 713 A, JP H043 688 87 A, JP H06 001 852 A and DE 43 22,999 AI be disclosed.
• the classical layer structure of a PV layer sequence proves to be the case where a lower-side, first electrode contacts a PV-active layer on a first side and the second side is to be contacted as the opposite side of a top-side counter electrode, as disadvantageous: pores, pinholes and openings in the PV-active layer make a top-side contact with liquid or pasty systems almost impossible, since these breakthroughs and defects the two electrode layers short-circuit each other, whereby the PV activity in large, area-wise areas can no longer reasonably be converted into electricity: the PV current flows via the short circuit / breakdown directly to the opposite side of the PV-active layer and can no longer be used; The layer heats up due to the PV current and electro-technical wear causes the affected area to age considerably and weather early.
• the object of the present invention was therefore to overcome the disadvantages of the prior art and to provide a process and a PV layer sequence according to the process which, despite industrial process control at room temperature, inorganic core components and using aqueous solutions and / or aqueous dispersions, a complete PV process.
• a process and a PV layer sequence according to the process which, despite industrial process control at room temperature, inorganic core components and using aqueous solutions and / or aqueous dispersions, a complete PV process.
• Provide Schich Riverside as part of a finished, contactable laminate.
• - inorganic core components using aqueous solutions and / or aqueous dispersions are processed by printing process to a complete, contactable via electrodes PV Schichello, characterized in that the method comprises the steps that in a step a) 0.5 to 100 microns, semiconducting particles 100, which consist of at least two elements, dispersed in an aqueous reaction solution 200, oxidatively or reductively dissolved and applied flat on a support 300, in a step b) the reaction solution 200 under volume contraction to a cured reaction Solution layer 201 is converted, wherein the particles 100 on the cured Reaction solution layer 201 protrude and have an anchored in the reaction solution layer 201 bottom and an over the reaction solution layer 201 protruding top and in a step c) the top of the particles is at least partially provided with a top side contact 400.
• a PV layer sequence according to the invention is obtained by the method described above and is characterized by particles 100, which are printed in flat sections on a support and are adjusted by the accompanying chemical reaction in their PV behavior. DESCRIPTION OF THE INVENTION AND ADVANTAGEOUS CHARACTERISTICS
• the inventive method for producing a PV layer sequence builds on the already developed and provides first that at room temperature inorganic, PV-active core components using aqueous solutions and / or aqueous dispersions by printing process to a complete, contactable via pick-off electrodes PV Sequence are processed.
• the method comprises the steps that in a step a) 0.5 to 100 micrometers large, semiconductive particles 100, which consist of at least two elements dispersed in an aqueous reaction solution 200, oxidatively or reductively solubilized and flat on a Carrier 300 are applied.
• the PV active material consisting of at least two elements is activated by the dissolution and changed in its stoichiometry.
• a previously uniform and uniform doping or composition thus undergoes considerable modification in a thin, outer layer. This modification is kinetically controlled at room temperature and forms the most rapidly accessible phases and compounds, resulting in products that are at least metastable in nature and differ significantly from the thermodynamically stable products.
• the printed reaction solution 200 is converted to a hardened reaction solution layer 201 under volume contraction.
• the layer had previously been prepared and printed as a dispersion in which substantially the void volume between the particles was filled by the aqueous, reactive solution.
• the consequence of the volume contraction is that the solution initially drops somewhat and exposes part of the particles 100.
• the interim educated, Metastable phases are fixed and the particles 100 are firmly anchored to the carrier 300.
• the particles 100 eventually protrude beyond the cured reaction solution layer 201.
• the particles thus have, in the end result, an underside anchored in the reaction solution layer 201 and an upper side protruding beyond the reaction solution layer 201.
• the upper side of the particles 100 is provided at least in sections with a top-side contact 400.
• PV layer sequences obtained in this way in the concrete embodiment show potential differences of several hundred millivolts accessible to SiC particles. The inventors believe that this can be explained by additional energy levels within the bandgap which can be attributed to the substoichiometric compounds and defects generated during the reaction from the outer surface of the particles 100.
• PV-active material combinations which are presented as homogeneous particles, reactive and are printed according to the claimed method and thereby changed in stoichiometry, can be used to produce a PV-active layer sequence in a particularly simple and inexpensive manner. Examples of established and possible, PV-active material combinations can be found illustratively in DE 39 36 666 C2; In the same direction known metal metal oxide and metal-metal halide combinations as described above can be used.
• the method is preferably characterized in that the particles 100 are conditioned oxidatively or reductively in at least one additional step in at least one surface section, whereby surfaces of reductively treated particles 102 or surfaces of oxidatively treated particles 103 are predetermined.
• the sign of the tapped, photovoltaic current could be reversed on SiC particles by oxidative / basic or reductive / acidic conditioning.
• a dark current which would indicate purely electrochemical processes, which also occur in the dark and without light, could not be measured.
• the inventors assume that here at least two levels within the band gap flooded or emptied oxidative or reductive measures, so that the nature of the majority charge carriers between the two energy levels depending on the conditioning on acceptor line or on donor line is set.
• the method is characterized in that in a further process step nanoscale structures comprising at least one structure selected from the group consisting of chains, nets, mesh tubes in direct contact with particles 100 at least one Klachenabitess, preferably a surface portion on the top are formed ,
• nanoscale structures comprising at least one structure selected from the group consisting of chains, nets, mesh tubes in direct contact with particles 100 at least one Seachenabitess, preferably a surface portion on the top are formed .
• an energy level can be additionally modified.
• additives based on carbon black, carbon nanotubes and chain-forming halogens and metal halides in the reaction solution yielded 200 broader and improved wavelength ranges in which a PV activity of the PV layer sequence was detectable. This can be expediently explained by electrical contacting and modification of the outside of the particle with the nano-tubes and chains.
• the method is preferably characterized in that adjoining surface sections of the particles 100 are conditioned with different solutions, wherein in turn the adjoining surface sections of the particles 100 are formed in alternating sequence as sections of reductively treated particles 102 and sections of oxidatively treated particles 103.
• the surfaces are each formed as a combination and arranged at a small distance from each other, whereby a top contact 400 can provide a series connection of the partial surfaces in a particularly simple manner.
• partial areas can be interconnected to form a cascade, in which the potential of the PV activity is additively linked. This resulted in a practical experiment in an arrangement on a carrier 300 made of wood, a cascaded alone at the top, tapped voltage of the printed, particulate PV layer of 1 to 2 volts.
• the method is preferably characterized in that, in at least one further method step, electrodes, comprising at least carrier electrode 301 and / or top-side contact layer 400, are preliminarily applied to a flatly extended material and finally over the areal extended material with the PV layer sequence get connected.
• electrodes comprising at least carrier electrode 301 and / or top-side contact layer 400
• air-drying and / or reactive-curing electrode solution is particularly preferably printed on a transparent film and then the film is adhesively bonded to the printed, PV-active layer in a predetermined position.
• the method is preferably characterized in that endlessly extended, flat material webs, preferably film webs and / or paper webs, particularly preferably hemp paper webs, are used as the carrier of the PV layer sequence.
• endlessly extended, flat material webs preferably film webs and / or paper webs, particularly preferably hemp paper webs
• hemp paper webs are used as the carrier of the PV layer sequence.
• Hemp offers the advantage of being able to be manufactured without sulphate; provided with additional moisture inhibitor and / or biocide, such a hemp paper can advantageously withstand high temperatures without yellowing or mechanically deteriorating appreciably or lessening in its properties.
• the method is preferably characterized in that comminuted, preferably mechanically comminuted, particles 100 having a particle size of at most 50 micrometers, preferably having a particle size of 30 ⁇ 15 micrometers, particularly preferably having a particle size of 0.5 to 10 micrometers, are used .
• Mechanically comminuted particles have corners and edges, which can be improved pressed into a carrier and anchored on the printing process.
• the method is preferably characterized in that the contact electrodes are printed and / or arranged on an inner side of an embedding film and the PV layer sequence obtained in accordance with the method is laminated in the embedding film to produce an electrical contact which is led out of the embedding compound.
• This allows particularly efficient simultaneous training and contacting entire modules as described for electrode wires in DE 40 18 013 A.
• Fig.la the result of step a) of the method in which a layer comprising particles 100 in reaction solution 200 has been printed on a support 300;
• FIG. 1b shows the result of step b) of the method in which the reaction solution 200 has been hardened to a thinner layer, namely the hardened reaction solution 201, in the case of the particles 100 now anchored on the carrier 300 on the underside by the hardened layer and on the top side the cured reaction solution 201 protrude;
• FIG. 1C shows a layer according to FIG. 1 a) and 1 b) after final application of a top contact 400;
• FIG. 2 shows a particle 100 with top side 101 and bottom side 102 treated in a reductively treated manner in process-anchoring by hardened reaction solution 201 on a support 300;
• FIG. 3 shows an arrangement and contacting of partial printed surfaces of particles 100 according to FIG. 2 in a simple PV layer sequence with underside counter electrode (not shown);
• FIG. 3 shows an arrangement and contacting of partial printed surfaces of particles 100 according to FIG. 2 in a simple PV layer sequence with underside counter electrode (not shown);
• FIG. 4 shows possible interconnection and resulting sign of printed partial areas of a PV layer sequence comprising a) oxidatively treated sections 103 and b) reductively treated sections 102, wherein in each case a lower-side carrier electrode 301 and a top-mounted decrease contact the section with a PV -Messbauè 500, here illustrated as a capacitor connect;
• FIG. 5 shows a possible interconnection of a sequence of subsections printed on a carrier 300 comprising particles 100, wherein in each subsection an oxidatively treated section 102 is combined with a reductively treated section 103, and FIG all subsections are cascaded across topside contacts 400 in series and the cascade is connected to a PV measurement assembly 500;
• FIG. 6 shows possible flow guidance of printed subsections comprising particles 100, wherein reductively treated sections 102 and oxidatively treated sections 103 are connected in a cascaded manner both in the sections and in each other by means of contacting;
• FIG. 7 shows a layer sequence arrangement comprising a carrier 300, a bottom-side carrier electrode 301, sections comprising particles 100 and top contacts 400;
• FIG. 8 shows a partial arrangement of the arrangement according to FIG. 7 with the highlighted elements carrier 300, carrier electrode 301 and non-conductive border 302 produced in relief printing;
• FIG. 9 shows a SEM image and schematic diagram produced in the same direction with reference numerals of a PV layer sequence according to the prior art, comprising the surface of a Cu-Ni backside electrode 601, to which a TCO layer 603 adjoins the backside electrode 602 in section, a PV Si-based active layer 604 with TCO capping layer and AR capping layer, and finally the top side glass substrate 605 is connected to the top side; according to scale 606 with 5 microns, the entire layer composite is a few microns thick;
• FIG. 10 SEM image and schematic diagram produced in the same direction with reference number of a process PV layer sequence comprising mechanically comminuted and conditioned with reaction solution and fixed particles 701, which are coated and fixed by hardened, glassy amorphous reaction solution 702, the scale 703 with 20 microns the clearly divergent proportions of the morphology illustrated;
• FIG. 11 SEM image and schematic diagram produced in the same direction with reference number of a PV layer sequence according to the method, comprising the phases 801 and 802, which are interpenetrating and enclose particles 803 anchoring, wherein the scale 804 with 5 micrometers illustrates the significantly different size ratios of the morphology.
• a process was carried out in which, in a step a), semiconducting, technically pure particles 100 of SiC dispersed in an aqueous reaction solution 200 consisting of silica solution which had been alkalized with sodium hydroxide with slight evolution of gas, oxidatively dissolved and flat on sections of a film and / or paper carrier 300 with previously
• reaction solution 200 is converted by volume contraction to a hardened reaction solution layer 201, wherein the particles 100 protrude beyond the hardened reaction solution layer 201 and an underside anchored in the reaction solution layer 201 and an over the reaction solution layer 201 have protruding top,
• Upper surface sections are oxidatively or reductively conditioned, whereby surfaces of reductively treated particles 102 or surfaces of oxidatively treated particles 103 are given, in turn
• nanoscale structures comprising at least one structure selected from
• Group consisting of chains, nets, mesh tubes, preferably CNT and / or halogen chains, are formed in direct contact with particles 100 at least one Kaychenabêts, and
• a step c) the top of the particles is at least partially provided with a top side contact 400 and the alternately conditioned surface portions of the particles 100 are connected in series and connected to terminal contact electrodes.
• an aqueous, acidic surfactant and on the other hand, an aqueous, alkaline polyol was used, wherein the surfactant and the polyol act as wetting agents on the aqueous phase with evaporable; Both adjuvants were printed to condition hardened sections areally with about 1 gram per square meter in thin to thinnest layer and the
• FIGS. 9 to 11 also illustrate the morphologically strongly deviating properties of the products according to the invention: In contrast to established systems and PV layers which are obtainable by kovaporation or other gas-phase products, the oversized chunks and coarse particles of the products according to the invention: In contrast to established systems and PV layers which are obtainable by kovaporation or other gas-phase products, the oversized chunks and coarse particles of the products according to the invention: In contrast to established systems and PV layers which are obtainable by kovaporation or other gas-phase products, the oversized chunks and coarse particles of the
• the object was therefore to overcome the disadvantages and to provide a method and a PV layer sequence according to the method, which despite the lowest Manufacturing cost can provide reliable and long-lasting a PV function.
• the solution is carried out by a reactive conditioning of inorganic particles in the context of a room temperature printing process; the superficial reactive conditioning sets the PV activity precisely, provides a kinetically controlled reaction product and can guarantee the desired PV activity even with technically pure starting materials with purities of 97%.

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• 2017
  • 2017-07-11 DE DE102017115533.3A patent/DE102017115533A1/de not_active Withdrawn
  • 2017-07-11 BR BR112019000712-1A patent/BR112019000712B1/pt active IP Right Grant
  • 2017-07-11 CN CN201780055564.7A patent/CN109743886B/zh active Active
  • 2017-07-11 US US16/317,223 patent/US11404592B2/en active Active
  • 2017-07-11 JP JP2019523162A patent/JP2019522382A/ja active Pending
  • 2017-07-11 EP EP17749113.1A patent/EP3523829B1/de active Active
  • 2017-07-11 RU RU2019103581A patent/RU2750998C2/ru active
  • 2017-07-11 PL PL17749113.1T patent/PL3523829T3/pl unknown
  • 2017-07-11 WO PCT/DE2017/100572 patent/WO2018010727A1/de not_active Ceased
• 2022
  • 2022-07-22 JP JP2022117478A patent/JP7500092B2/ja active Active

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