JP2020504455A - 強誘電体強化太陽電池及びその製造方法 - Google Patents
強誘電体強化太陽電池及びその製造方法 Download PDFInfo
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Abstract
Description
Claims (10)
- 太陽電池が導電性基板(1)と相次ぎにこの導電性基板(1)に沈着した正孔阻止層(2)、メソポーラスナノ結晶層(3)、メソポーラススペーサー(4)及びメソポーラス電極層(5)を含むことを特徴とする強誘電体強化太陽電池であり、その中、前記のメソポーラスナノ結晶層(3)、前記のメソポーラススペーサー(4)及び前記のメソポーラス電極層(5)の少なくとも1層のメソポーラスに光活性材料が充填されていて、前記の正孔阻止層(2)、前記のメソポーラスナノ結晶層(3)及び前記のメソポーラススペーサー(4)の少なくとも1層が強誘電体または強誘電体ナノコンポジットを含む。
- 前記の正孔阻止層(2)が前記の強誘電体または強誘電体ナノコンポジットを含む場合、この正孔阻止層(2)は厚さが100nmまでであり、前記のメソポーラスナノ結晶層(3)が前記の強誘電体または強誘電体ナノコンポジットを含む場合、このメソポーラスナノ結晶層(3)は厚さが100〜5000nm、前記のメソポーラススペーサー(4)が前記の強誘電体または強誘電体ナノコンポジットを含む場合、このメソポーラススペーサー(4)は厚さが100〜5000nmにあることを特徴とする請求項1に記載の強誘電体強化太陽電池。
- 前記の強誘電体が強誘電効果のある誘電体であることを特徴とする請求項1に記載の強誘電体強化太陽電池、望ましくは、前記の正孔阻止層(2)及び前記のメソポーラスナノ結晶層(3)に記載の強誘電体がBaSnO3、前記のメソポーラススペーサー(4)に記載の強誘電体がCaTiO3、BaTiO3、PbZrO3、PbTiO3、PbZrO3、ZnTiO3、BaZrO3、Pb(Zr1-xTix)O3、(LayPb1-y)(Zr1-xTix)O3、(1-x)[Pb(Mg1/3Nb2/3)O3]・x[PbTiO3]、BiFeO3、Pb(Zn1/3Nb2/3)O3、Pb(Mg1/3Nb2/3)O3、(Na1/2Bi1/2)TiO3、(K1/2Bi1/2)TiO3、LiNbO3、KNbO3、KTaO3、Pb(SrxTa1-x)O3、BaxSr1-xTiO3のいずれかまたは複数である。その中、前記のPb(Zr1-xTix)O3及び前記の(1-x)[Pb(Mg1/3Nb2/3)O3]・x[PbTiO3]の中のxが0≦x≦1、前記の(LayPb1-y)(Zr1-xTix)O3の中のxが0≦x≦1、yが0≦y≦1、前記のPb(SrxTa1-x)O3の中のxが0≦x≦1、前記のBaxSr1-xTiO3の中のxが0≦x≦1であり、
望ましくは、前記のメソポーラスナノ結晶層(3)またはメソポーラススペーサー(4)の中の強誘電体は粒径が5〜200nmにある。 - 前記の強誘電体ナノコンポジットが強誘電体ナノ粒子をコア、絶縁材料をシェルにし、コア-シェル構成のある複合材料であることを特徴とする請求項1に記載の強誘電体強化太陽電池、望ましくは、前記の絶縁材料が少なくともZrO2、Al2O3、SiO2のいずれかであり、前記の正孔阻止層(2)及び前記のメソポーラスナノ結晶層(3)に該当する前記の強誘電体がBaSnO3、メソポーラススペーサー(4)に該当する前記の強誘電体がCaTiO3、BaTiO3、PbZrO3、PbTiO3、PbZrO3、ZnTiO3、BaZrO3、Pb(Zr1-xTix)O3、(LayPb1-y)(Zr1-xTix)O3、(1-x)[Pb(Mg1/3Nb2/3)O3]・x[PbTiO3]、BiFeO3、Pb(Zn1/3Nb2/3)O3、Pb(Mg1/3Nb2/3)O3、(Na1/2Bi1/2)TiO3、(K1/2Bi1/2)TiO3、LiNbO3、KNbO3、KTaO3、Pb(SrxTa1-x)O3、BaxSr1-xTiO3のいずれかまたは複数である。その中、前記のPb(Zr1-xTix)O3及び前記の(1-x)[Pb(Mg1/3Nb2/3)O3]・x[PbTiO3]の中のxが0≦x≦1、前記の(LayPb1-y)(Zr1-xTix)O3の中のxが0≦x≦1、yが0≦y≦1、前記のPb(SrxTa1-x)O3の中のxが0≦x≦1、前記のBaxSr1-xTiO3の中のxが0≦x≦1であり、
望ましくは、前記のメソポーラスナノ結晶層(3)またはメソポーラススペーサー(4)の中の強誘電体ナノコンポジットは粒径が5〜200nmにある。 - 前記の正孔阻止層(2)が緻密な無機酸化物半導体材料膜または緻密な強誘電体膜であることを特徴とする請求項1に記載の強誘電体強化太陽電池、その中、前記の無機酸化物半導体材料がTiO2、ZnOまたはSnO2である。
- 前記のメソポーラスナノ結晶層(3)がメソポーラス TiO2ナノ結晶層、メソポーラスZnOナノ結晶層、メソポーラスSnO2ナノ結晶層、メソポーラス強誘電体ナノ結晶層またはメソポーラス強誘電体ナノコンポジットナノ結晶層であることを特徴とする請求項1に記載の強誘電体強化太陽電池、望ましくは、前記のメソポーラスナノ結晶層(3)がメソポーラスBaSnO3ナノ結晶層である。
- 前記のメソポーラススペーサー(4)がメソポーラスZrO2層、メソポーラスSiO2層、メソポーラスAl2O3層、メソポーラス強誘電体層またはメソポーラス強誘電体ナノコンポジット層であることを特徴とする請求項1に記載の強誘電体強化太陽電池。
- 前記の光活性材料がペロブスカイト系半導体材料または禁制帯幅2eVまでの半導体材料、前記のペロブスカイト系半導体材料の化学式がABX3であることを特徴とする請求項1に記載の強誘電体強化太陽電池、その中、Aはメチルアミン、ホルムアミジン、アルカリ金属元素の少なくともいずれか、Bが鉛、錫の少なくともいずれか、Xがヨウ素、臭素、塩素の少なくともいずれかであり、望ましくは、前記の狭禁制帯半導体材料がSe、SbSe、CdSeの少なくともいずれかである。
- 下記のステップを含むことを特徴とする請求項1〜8のいずれかに記載の強誘電体強化太陽電池の製造方法、
(1)導電性基板に正孔阻止層を付ける、
(2)前記の正孔阻止層に相次ぎにメソポーラスナノ結晶層、メソポーラススペーサー及びメソポーラス電極層を積層し、焼結してから太陽電池のフレーム構成を取得する、
(3)80〜150℃で前記の太陽電池のフレーム構成に印加電界を印加して分極を行い、前記の印加電界の電界強さがE≦10kV/mmであり、方向が前記の導電性基板の平面と垂直し、前記のメソポーラスナノ結晶層から前記のメソポーラス電極層に指す、
(4)光活性材料の前駆体溶液を前記のステップ(3)による分極された太陽電池のフレーム構成に塗り、前記の光活性材料の前駆体溶液を上から下まで前記のメソポーラス裏面の電極、前記のメソポーラススペーサー及び前記のメソポーラスナノ結晶層のメソポーラスに充填し、乾燥して前記の前駆体溶液の中の溶剤を除去してから強誘電体強化太陽電池装置を取得できる。 - 前記のステップ(2)で、前記のメソポーラス電極層がメソポーラス炭素電極層であることを特徴とする請求項9に記載の強誘電体強化太陽電池の製造方法。
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