JP7012282B2 - 強誘電体強化太陽電池及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000002159 nanocrystal Substances 0.000 claims description 58
- 125000006850 spacer group Chemical group 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 55
- 230000005684 electric field Effects 0.000 claims description 30
- 230000000903 blocking effect Effects 0.000 claims description 28
- 239000002114 nanocomposite Substances 0.000 claims description 28
- 230000010287 polarization Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 239000002105 nanoparticle Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 8
- 239000011258 core-shell material Substances 0.000 claims description 7
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 5
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 27
- 239000010936 titanium Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000008187 granular material Substances 0.000 description 17
- 239000004408 titanium dioxide Substances 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 11
- 238000000926 separation method Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000001856 Ethyl cellulose Substances 0.000 description 6
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 6
- 229920001249 ethyl cellulose Polymers 0.000 description 6
- 235000019325 ethyl cellulose Nutrition 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000013335 mesoporous material Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 5
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 229940116411 terpineol Drugs 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002707 nanocrystalline material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
Claims (8)
- 太陽電池が導電性基板(1)と相次ぎにこの導電性基板(1)に沈着した正孔阻止層(2)、メソポーラスナノ結晶層(3)、メソポーラススペーサー(4)及びメソポーラス電極層(5)を含み、
前記のメソポーラスナノ結晶層(3)、前記のメソポーラススペーサー(4)及び前記のメソポーラス電極層(5)の少なくとも1層のメソポーラスに光活性材料が充填されていて、前記の正孔阻止層(2)、前記のメソポーラスナノ結晶層(3)及び前記のメソポーラススペーサー(4)の少なくとも1層が強誘電体ナノコンポジットを含み、
前記の強誘電体ナノコンポジットが強誘電体ナノ粒子をコア、絶縁材料をシェルにし、コア-シェル構成のある複合材料であることを特徴とする強誘電体強化太陽電池。 - 前記の正孔阻止層(2)が前記の強誘電体ナノコンポジットを含む場合、この正孔阻止層(2)は厚さが100nmまでであり、前記のメソポーラスナノ結晶層(3)が前記の強誘電体ナノコンポジットを含む場合、このメソポーラスナノ結晶層(3)は厚さが100~5000nm、前記のメソポーラススペーサー(4)が前記の強誘電体ナノコンポジットを含む場合、このメソポーラススペーサー(4)は厚さが100~5000nmにあることを特徴とする請求項1に記載の強誘電体強化太陽電池。
- 前記の正孔阻止層(2)が緻密な無機酸化物半導体材料膜または緻密な強誘電体膜であり、前記の無機酸化物半導体材料がTiO2、ZnOまたはSnO2であることを特徴とする請求項1に記載の強誘電体強化太陽電池。
- 前記のメソポーラスナノ結晶層(3)がメソポーラス TiO2ナノ結晶層、メソポーラスZnOナノ結晶層、メソポーラスSnO2ナノ結晶層、メソポーラス強誘電体ナノ結晶層またはメソポーラス強誘電体ナノコンポジットナノ結晶層であることを特徴とする請求項1に記載の強誘電体強化太陽電池。
- 前記のメソポーラススペーサー(4)がメソポーラスZrO2層、メソポーラスSiO2層、メソポーラスAl2O3層、メソポーラス強誘電体層またはメソポーラス強誘電体ナノコンポジット層であることを特徴とする請求項1に記載の強誘電体強化太陽電池。
- 前記の光活性材料がペロブスカイト系半導体材料または禁制帯幅2eVまでの半導体材料、前記のペロブスカイト系半導体材料の化学式がABX3であり、Aはメチルアミン、ホルムアミジン、アルカリ金属元素の少なくともいずれか、Bが鉛、錫の少なくともいずれか、Xがヨウ素、臭素、塩素の少なくともいずれかであることを特徴とする請求項1に記載の強誘電体強化太陽電池。
- 下記のステップを含むことを特徴とする請求項1~6のいずれかに記載の強誘電体強化太陽電池の製造方法、
(1)導電性基板に正孔阻止層を付ける、
(2)前記の正孔阻止層に相次ぎにメソポーラスナノ結晶層、メソポーラススペーサー及びメソポーラス電極層を積層し、焼結してから太陽電池のフレーム構成を取得する、
(3)80~150℃で前記の太陽電池のフレーム構成に印加電界を印加して分極を行い、前記の印加電界の電界強さがE≦10kV/mmであり、方向が前記の導電性基板の平面と垂直し、前記のメソポーラスナノ結晶層から前記のメソポーラス電極層に指す、
(4)光活性材料の前駆体溶液を前記のステップ(3)による分極された太陽電池のフレーム構成に塗り、前記の光活性材料の前駆体溶液を上から下まで前記のメソポーラス裏面の電極、前記のメソポーラススペーサー及び前記のメソポーラスナノ結晶層のメソポーラスに充填し、乾燥して前記の前駆体溶液の中の溶剤を除去してから強誘電体強化太陽電池装置を取得できる。 - 前記のステップ(2)で、前記のメソポーラス電極層がメソポーラス炭素電極層であることを特徴とする請求項7に記載の強誘電体強化太陽電池の製造方法。
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