DE102011010629B4 - Optoelektronische Vorrichtung und Verfahren zur Herstellung derselben - Google Patents

Optoelektronische Vorrichtung und Verfahren zur Herstellung derselben Download PDF

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Publication number
DE102011010629B4
DE102011010629B4 DE102011010629.4A DE102011010629A DE102011010629B4 DE 102011010629 B4 DE102011010629 B4 DE 102011010629B4 DE 102011010629 A DE102011010629 A DE 102011010629A DE 102011010629 B4 DE102011010629 B4 DE 102011010629B4
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layer
window layer
window
optoelectronic
optoelectronic device
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DE102011010629A1 (de
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Shih.I Chen
Chia-Liang Hsu
Tzu Chieh Hsu
Chun-Yi Wu
Chien Fu Huang
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ENNOSTAR CORPORATION, TW
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Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
DE102011010629.4A 2010-02-09 2011-02-08 Optoelektronische Vorrichtung und Verfahren zur Herstellung derselben Active DE102011010629B4 (de)

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US30266210P 2010-02-09 2010-02-09
US61/302,662 2010-02-09

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DE102011010629A1 DE102011010629A1 (de) 2014-02-06
DE102011010629B4 true DE102011010629B4 (de) 2021-02-25

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US (2) US8207550B2 (https=)
JP (5) JP5635432B2 (https=)
KR (2) KR101280400B1 (https=)
CN (2) CN102148301B (https=)
DE (1) DE102011010629B4 (https=)
TW (6) TWI513040B (https=)

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JP6332301B2 (ja) * 2016-02-25 2018-05-30 日亜化学工業株式会社 発光素子
CN105914274A (zh) * 2016-06-13 2016-08-31 南昌凯迅光电有限公司 一种侧壁粗化高亮度发光二极管及其制备方法
TWI622188B (zh) 2016-12-08 2018-04-21 錼創科技股份有限公司 發光二極體晶片
CN106784223B (zh) * 2016-12-22 2019-05-14 天津三安光电有限公司 发光二极管及其制作方法
TWI626766B (zh) * 2017-06-01 2018-06-11 錼創科技股份有限公司 發光元件
CN110574175B (zh) * 2018-07-27 2023-08-25 天津三安光电有限公司 一种半导体发光元件
CN115312645B (zh) * 2019-01-17 2025-10-17 泉州三安半导体科技有限公司 一种半导体发光元件
CN112152085B (zh) * 2020-11-24 2021-02-12 度亘激光技术（苏州）有限公司 半导体结构的制备方法、半导体结构和半导体器件
CN112885718B (zh) * 2021-01-20 2022-07-05 厦门乾照光电股份有限公司 一种复合导电薄膜的制备方法
KR102629307B1 (ko) * 2022-04-26 2024-01-29 숭실대학교산학협력단 질화물 반도체 소자의 제조방법
CN115458647B (zh) * 2022-10-31 2025-08-19 天津三安光电有限公司 一种垂直led芯片结构及其制造方法及发光装置
KR102721221B1 (ko) * 2023-05-30 2024-10-24 웨이브로드 주식회사 반도체 소자용 템플릿을 이용한 반도체 적층체 및 그 제조 방법
KR102722728B1 (ko) * 2023-07-21 2024-10-28 웨이브로드 주식회사 마이크로 led 디스플레이용 칩 온 웨이퍼의 제조 방법
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US8207550B2 (en) 2012-06-26
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