DE102009058796A1 - Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements - Google Patents

Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements Download PDF

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Publication number
DE102009058796A1
DE102009058796A1 DE102009058796A DE102009058796A DE102009058796A1 DE 102009058796 A1 DE102009058796 A1 DE 102009058796A1 DE 102009058796 A DE102009058796 A DE 102009058796A DE 102009058796 A DE102009058796 A DE 102009058796A DE 102009058796 A1 DE102009058796 A1 DE 102009058796A1
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Prior art keywords
semiconductor
sealing material
component
layer
component according
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DE102009058796A
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German (de)
English (en)
Inventor
Alfred 93142 Lell
Tilman Dr. 93152 Schlenker
Michael Dr. 93077 Fehrer
Sönke Dr. 93105 Tautz
Uwe Dr. 93077 Strauß
Martin Dr. 93128 Müller
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102009058796A priority Critical patent/DE102009058796A1/de
Priority to EP10781917A priority patent/EP2513984A1/de
Priority to US13/516,915 priority patent/US9508903B2/en
Priority to CN201080057782.2A priority patent/CN102668140B/zh
Priority to PCT/EP2010/068548 priority patent/WO2011073027A1/de
Priority to KR1020127018892A priority patent/KR20120114311A/ko
Priority to JP2012543585A priority patent/JP5710638B2/ja
Priority to TW099144153A priority patent/TWI446594B/zh
Publication of DE102009058796A1 publication Critical patent/DE102009058796A1/de
Priority to JP2015042063A priority patent/JP6001114B2/ja
Priority to US15/265,487 priority patent/US9768360B2/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
DE102009058796A 2009-12-18 2009-12-18 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements Withdrawn DE102009058796A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102009058796A DE102009058796A1 (de) 2009-12-18 2009-12-18 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
KR1020127018892A KR20120114311A (ko) 2009-12-18 2010-11-30 광전자 소자 그리고 광전자 소자를 제조하기 위한 방법
US13/516,915 US9508903B2 (en) 2009-12-18 2010-11-30 Optoelectronic component and method for producing an optoelectronic component
CN201080057782.2A CN102668140B (zh) 2009-12-18 2010-11-30 光电子器件和用于制造光电子器件的方法
PCT/EP2010/068548 WO2011073027A1 (de) 2009-12-18 2010-11-30 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
EP10781917A EP2513984A1 (de) 2009-12-18 2010-11-30 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
JP2012543585A JP5710638B2 (ja) 2009-12-18 2010-11-30 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法
TW099144153A TWI446594B (zh) 2009-12-18 2010-12-16 光電元件及製造光電元件之方法
JP2015042063A JP6001114B2 (ja) 2009-12-18 2015-03-04 オプトエレクトロニクス素子の製造方法
US15/265,487 US9768360B2 (en) 2009-12-18 2016-09-14 Optoelectronic component and method of producing an optoelectronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009058796A DE102009058796A1 (de) 2009-12-18 2009-12-18 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Publications (1)

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DE102009058796A1 true DE102009058796A1 (de) 2011-06-22

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DE102009058796A Withdrawn DE102009058796A1 (de) 2009-12-18 2009-12-18 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Country Status (8)

Country Link
US (2) US9508903B2 (https=)
EP (1) EP2513984A1 (https=)
JP (2) JP5710638B2 (https=)
KR (1) KR20120114311A (https=)
CN (1) CN102668140B (https=)
DE (1) DE102009058796A1 (https=)
TW (1) TWI446594B (https=)
WO (1) WO2011073027A1 (https=)

Cited By (13)

* Cited by examiner, † Cited by third party
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US20120049225A1 (en) * 2010-08-25 2012-03-01 Nichia Corporation Light emitting device and method of manufacturing thereof
DE102011016935A1 (de) * 2011-04-13 2012-10-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
DE102012111512A1 (de) * 2012-11-28 2014-05-28 Osram Opto Semiconductors Gmbh Halbleiterstreifenlaser
JP2015500562A (ja) * 2011-11-18 2015-01-05 ルクスビュー テクノロジー コーポレイション マイクロ発光ダイオード
DE102014116141A1 (de) * 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement
US9463613B2 (en) 2011-11-18 2016-10-11 Apple Inc. Micro device transfer head heater assembly and method of transferring a micro device
US9620478B2 (en) 2011-11-18 2017-04-11 Apple Inc. Method of fabricating a micro device transfer head
US9831383B2 (en) 2011-11-18 2017-11-28 Apple Inc. LED array
DE102017112223A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
US10256379B2 (en) 2015-06-02 2019-04-09 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
DE102020117238A1 (de) 2020-06-30 2021-12-30 First Sensor AG Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement
DE112013004761B4 (de) 2012-09-27 2022-01-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Vereinzeln von Bereichen einer Halbleiterschicht
US11695251B2 (en) 2014-02-24 2023-07-04 Osram Oled Gmbh Laser diode chip having coated laser facet

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Publication number Priority date Publication date Assignee Title
CN103165742B (zh) * 2011-12-16 2016-06-08 清华大学 太阳能电池的制备方法
TWI455332B (zh) * 2011-12-29 2014-10-01 Advanced Wireless Semiconductor Company Solar cell and its manufacturing method
US8791551B2 (en) * 2012-03-13 2014-07-29 Formosa Microsemi Co., Ltd. Well-through type diode element/component and manufacturing method for them
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
US8737445B2 (en) 2012-04-04 2014-05-27 Osram Opto Semiconductors Gmbh Laser diode assembly
DE102012103160A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
US9008138B2 (en) 2012-04-12 2015-04-14 Osram Opto Semiconductors Gmbh Laser diode device
JP6025410B2 (ja) 2012-06-12 2016-11-16 株式会社ディスコ 光デバイスの加工方法
JP6029338B2 (ja) 2012-06-12 2016-11-24 株式会社ディスコ 光デバイスの加工方法
JP2013258234A (ja) 2012-06-12 2013-12-26 Disco Abrasive Syst Ltd 光デバイスの加工方法
JP2013258231A (ja) * 2012-06-12 2013-12-26 Disco Abrasive Syst Ltd 光デバイスの加工方法
DE102012107409B4 (de) * 2012-08-13 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiter-Laserelements
DE102012112531A1 (de) * 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiter-Laserelementen und Halbleiter-Laserelement
DE102013100818B4 (de) * 2013-01-28 2023-07-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
KR102103421B1 (ko) * 2013-02-07 2020-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
DE102013202906A1 (de) * 2013-02-22 2014-08-28 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102013107971A1 (de) * 2013-07-25 2015-01-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
FI20135967A7 (fi) * 2013-09-27 2015-03-28 Lumichip Oy Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi
US9406564B2 (en) * 2013-11-21 2016-08-02 Infineon Technologies Ag Singulation through a masking structure surrounding expitaxial regions
US9300112B2 (en) 2013-12-18 2016-03-29 Lumentum Operations Llc Packaged laser diode and method of packaging a laser diode
DE102014102292A1 (de) * 2014-02-21 2015-08-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
US9502614B2 (en) 2014-06-04 2016-11-22 Formosa Epitaxy Incorporation Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode
DE102014108368A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung
TWI513012B (zh) * 2014-12-02 2015-12-11 Neo Solar Power Corp 異質接面太陽能電池及其製造方法
JP6557970B2 (ja) * 2014-12-26 2019-08-14 日亜化学工業株式会社 発光装置
DE102015100686A1 (de) * 2015-01-19 2016-07-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Halbleiterchips und Halbleiterchip
CN104766913A (zh) * 2015-03-30 2015-07-08 映瑞光电科技(上海)有限公司 Led结构及其制造方法
JP6237826B2 (ja) * 2015-09-30 2017-11-29 日亜化学工業株式会社 パッケージ及び発光装置、並びにそれらの製造方法
US9865779B2 (en) 2015-09-30 2018-01-09 Nichia Corporation Methods of manufacturing the package and light-emitting device
DE102015118041B4 (de) 2015-10-22 2026-01-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
US9893239B2 (en) 2015-12-08 2018-02-13 Nichia Corporation Method of manufacturing light emitting device
CN107403724A (zh) * 2016-05-20 2017-11-28 稳懋半导体股份有限公司 化合物半导体集成电路的抗湿气结构
JP2019523562A (ja) * 2016-07-29 2019-08-22 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光学的検出のための光センサおよび検出器
WO2018079907A1 (ko) * 2016-10-27 2018-05-03 주식회사 엘에스텍 플렉서블 솔라셀 모듈의 제조방법 및 그 솔라셀 모듈
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