TWI446594B - 光電元件及製造光電元件之方法 - Google Patents

光電元件及製造光電元件之方法 Download PDF

Info

Publication number
TWI446594B
TWI446594B TW099144153A TW99144153A TWI446594B TW I446594 B TWI446594 B TW I446594B TW 099144153 A TW099144153 A TW 099144153A TW 99144153 A TW99144153 A TW 99144153A TW I446594 B TWI446594 B TW I446594B
Authority
TW
Taiwan
Prior art keywords
semiconductor
sealing material
component
layer
carrier
Prior art date
Application number
TW099144153A
Other languages
English (en)
Chinese (zh)
Other versions
TW201143162A (en
Inventor
麥克 菲勒
阿弗雷德 萊爾
馬丁 繆勒
提爾曼 舒倫克
舒克 泰伍茲
烏維 史特勞斯
Original Assignee
歐司朗光電半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐司朗光電半導體公司 filed Critical 歐司朗光電半導體公司
Publication of TW201143162A publication Critical patent/TW201143162A/zh
Application granted granted Critical
Publication of TWI446594B publication Critical patent/TWI446594B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
TW099144153A 2009-12-18 2010-12-16 光電元件及製造光電元件之方法 TWI446594B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009058796A DE102009058796A1 (de) 2009-12-18 2009-12-18 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Publications (2)

Publication Number Publication Date
TW201143162A TW201143162A (en) 2011-12-01
TWI446594B true TWI446594B (zh) 2014-07-21

Family

ID=43416825

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099144153A TWI446594B (zh) 2009-12-18 2010-12-16 光電元件及製造光電元件之方法

Country Status (8)

Country Link
US (2) US9508903B2 (https=)
EP (1) EP2513984A1 (https=)
JP (2) JP5710638B2 (https=)
KR (1) KR20120114311A (https=)
CN (1) CN102668140B (https=)
DE (1) DE102009058796A1 (https=)
TW (1) TWI446594B (https=)
WO (1) WO2011073027A1 (https=)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5864089B2 (ja) 2010-08-25 2016-02-17 日亜化学工業株式会社 発光装置の製造方法
DE102011016935A1 (de) * 2011-04-13 2012-10-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8426227B1 (en) * 2011-11-18 2013-04-23 LuxVue Technology Corporation Method of forming a micro light emitting diode array
US9620478B2 (en) 2011-11-18 2017-04-11 Apple Inc. Method of fabricating a micro device transfer head
CN103165742B (zh) * 2011-12-16 2016-06-08 清华大学 太阳能电池的制备方法
TWI455332B (zh) * 2011-12-29 2014-10-01 Advanced Wireless Semiconductor Company Solar cell and its manufacturing method
US8791551B2 (en) * 2012-03-13 2014-07-29 Formosa Microsemi Co., Ltd. Well-through type diode element/component and manufacturing method for them
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
US8737445B2 (en) 2012-04-04 2014-05-27 Osram Opto Semiconductors Gmbh Laser diode assembly
DE102012103160A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
US9008138B2 (en) 2012-04-12 2015-04-14 Osram Opto Semiconductors Gmbh Laser diode device
JP6025410B2 (ja) 2012-06-12 2016-11-16 株式会社ディスコ 光デバイスの加工方法
JP6029338B2 (ja) 2012-06-12 2016-11-24 株式会社ディスコ 光デバイスの加工方法
JP2013258234A (ja) 2012-06-12 2013-12-26 Disco Abrasive Syst Ltd 光デバイスの加工方法
JP2013258231A (ja) * 2012-06-12 2013-12-26 Disco Abrasive Syst Ltd 光デバイスの加工方法
DE102012107409B4 (de) * 2012-08-13 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiter-Laserelements
DE102012220909A1 (de) 2012-09-27 2014-05-15 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln von Bereichen einer Halbleiterschicht
DE102012111512B4 (de) * 2012-11-28 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstreifenlaser
DE102012112531A1 (de) * 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiter-Laserelementen und Halbleiter-Laserelement
DE102013100818B4 (de) * 2013-01-28 2023-07-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
KR102103421B1 (ko) * 2013-02-07 2020-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
DE102013202906A1 (de) * 2013-02-22 2014-08-28 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102013107971A1 (de) * 2013-07-25 2015-01-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
FI20135967A7 (fi) * 2013-09-27 2015-03-28 Lumichip Oy Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi
US9406564B2 (en) * 2013-11-21 2016-08-02 Infineon Technologies Ag Singulation through a masking structure surrounding expitaxial regions
US9300112B2 (en) 2013-12-18 2016-03-29 Lumentum Operations Llc Packaged laser diode and method of packaging a laser diode
DE102014102292A1 (de) * 2014-02-21 2015-08-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102014102360A1 (de) 2014-02-24 2015-08-27 Osram Opto Semiconductors Gmbh Laserdiodenchip
US9502614B2 (en) 2014-06-04 2016-11-22 Formosa Epitaxy Incorporation Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode
DE102014108368A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102014116141B4 (de) * 2014-11-05 2022-07-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement
TWI513012B (zh) * 2014-12-02 2015-12-11 Neo Solar Power Corp 異質接面太陽能電池及其製造方法
JP6557970B2 (ja) * 2014-12-26 2019-08-14 日亜化学工業株式会社 発光装置
DE102015100686A1 (de) * 2015-01-19 2016-07-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Halbleiterchips und Halbleiterchip
CN104766913A (zh) * 2015-03-30 2015-07-08 映瑞光电科技(上海)有限公司 Led结构及其制造方法
DE102015108736A1 (de) 2015-06-02 2016-12-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP6237826B2 (ja) * 2015-09-30 2017-11-29 日亜化学工業株式会社 パッケージ及び発光装置、並びにそれらの製造方法
US9865779B2 (en) 2015-09-30 2018-01-09 Nichia Corporation Methods of manufacturing the package and light-emitting device
DE102015118041B4 (de) 2015-10-22 2026-01-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
US9893239B2 (en) 2015-12-08 2018-02-13 Nichia Corporation Method of manufacturing light emitting device
CN107403724A (zh) * 2016-05-20 2017-11-28 稳懋半导体股份有限公司 化合物半导体集成电路的抗湿气结构
JP2019523562A (ja) * 2016-07-29 2019-08-22 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光学的検出のための光センサおよび検出器
WO2018079907A1 (ko) * 2016-10-27 2018-05-03 주식회사 엘에스텍 플렉서블 솔라셀 모듈의 제조방법 및 그 솔라셀 모듈
DE102017108435A1 (de) * 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
DE102017117135A1 (de) 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode
CN107731758B (zh) * 2017-09-13 2019-12-06 厦门市三安光电科技有限公司 一种半导体元件的固晶方法及半导体元件
US11955574B2 (en) * 2017-10-05 2024-04-09 International Business Machines Corporation Photovoltaic cell form ultra-small IOT device with multi-level voltage output
CN111933771B (zh) * 2018-07-28 2023-02-17 厦门三安光电有限公司 微发光二极管及其显示装置
JP6981492B2 (ja) * 2018-08-20 2021-12-15 三菱電機株式会社 半導体レーザ装置の製造方法
CN109392253B (zh) * 2018-09-17 2020-05-19 珠海欧比特电子有限公司 一种改进型的三维立体封装方法
JP6994688B2 (ja) * 2018-09-18 2022-01-14 株式会社Ｕｓｋテクノロジー 流体殺菌装置
US11307357B2 (en) * 2018-12-28 2022-04-19 Facebook Technologies, Llc Overcoating slanted surface-relief structures using atomic layer deposition
US11412207B2 (en) 2018-12-28 2022-08-09 Meta Platforms Technologies, Llc Planarization of overcoat layer on slanted surface-relief structures
US10964905B2 (en) 2019-04-08 2021-03-30 Interdigital Ce Patent Holdings Organic light emitting diode cell comprising a set of right circular hollow cylinders
DE102020117238B4 (de) 2020-06-30 2025-03-27 First Sensor AG Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement
US11597651B2 (en) * 2020-09-09 2023-03-07 Industry-Academic Cooperation Foundation, Yonsei University Layered group III-V compound and nanosheet containing phosphorus, and electrical device using the same
DE102020124258A1 (de) * 2020-09-17 2022-03-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements
WO2022073604A1 (en) * 2020-10-07 2022-04-14 Huawei Technologies Co., Ltd. Forming semiconductor devices for non-hermetic environments
DE102020127014A1 (de) * 2020-10-14 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
JP7387978B2 (ja) 2021-04-20 2023-11-29 日亜化学工業株式会社 発光装置
CN116454726A (zh) * 2022-01-06 2023-07-18 武汉光迅科技股份有限公司 一种用于非气密封装的光组件及密封方法
CN116260041A (zh) * 2023-01-29 2023-06-13 潍坊华光光电子有限公司 一种降低激光器烧结爬铟的芯片结构及制备方法
TWI852634B (zh) * 2023-06-15 2024-08-11 台亞半導體股份有限公司 具紫外光感測功能之環境光感測器
CN118867836A (zh) * 2024-09-25 2024-10-29 深圳市柠檬光子科技有限公司 边发射激光器及其制备方法

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01286345A (ja) 1988-05-12 1989-11-17 Mitsubishi Electric Corp 樹脂封止半導体装置
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
JPH05318826A (ja) 1992-05-27 1993-12-03 Rohm Co Ltd Ｌｅｄアレイプリントヘッドの構造
GB2295722B (en) 1994-11-30 1997-12-17 Motorola Ltd Method of packaging integrated circuits
US5861636A (en) 1995-04-11 1999-01-19 Nec Corporation Surface emitting visible light emiting diode having ring-shaped electrode
DE59713024D1 (de) * 1996-06-26 2010-01-28 Osram Opto Semiconductors Gmbh Lichtabstrahlender Halbleiterchip und Lichtabstrahlendes Halbleiterbauelement und Verfahren zu dessen Herstellung
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
DE19963806C2 (de) 1999-12-30 2002-02-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Leuchtdioden-Weißlichtquelle, Verwendung einer Kunststoff-Preßmasse zum Herstellen einer Leuchtioden-Weißlichtquelle und oberflächenmontierbare Leuchtdioden-Weißlichtquelle
US6368899B1 (en) 2000-03-08 2002-04-09 Maxwell Electronic Components Group, Inc. Electronic device packaging
US20010052752A1 (en) 2000-04-25 2001-12-20 Ghosh Amalkumar P. Thin film encapsulation of organic light emitting diode devices
US7476420B2 (en) * 2000-10-23 2009-01-13 Asm International N.V. Process for producing metal oxide films at low temperatures
JP4545956B2 (ja) 2001-01-12 2010-09-15 ローム株式会社 半導体装置、およびその製造方法
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
JP2004095765A (ja) * 2002-08-30 2004-03-25 Nichia Chem Ind Ltd 発光装置およびその製造方法
KR100523484B1 (ko) 2002-11-11 2005-10-24 한국전자통신연구원 전류 제한 구조를 갖는 반도체 광소자의 제조방법
US7294360B2 (en) 2003-03-31 2007-11-13 Planar Systems, Inc. Conformal coatings for micro-optical elements, and method for making the same
US7405468B2 (en) * 2003-04-11 2008-07-29 Dai Nippon Printing Co., Ltd. Plastic package and method of fabricating the same
JP2005019946A (ja) 2003-05-30 2005-01-20 Sanyo Electric Co Ltd メサ分離型モノリシック発光ダイオードアレイ及びその製造方法
JP4349032B2 (ja) 2003-08-05 2009-10-21 日亜化学工業株式会社 発光装置及びその製造方法
JP2005093649A (ja) 2003-09-17 2005-04-07 Oki Data Corp 半導体複合装置、ｌｅｄプリントヘッド、及び、それを用いた画像形成装置
DE102004050371A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
US7348193B2 (en) * 2005-06-30 2008-03-25 Corning Incorporated Hermetic seals for micro-electromechanical system devices
JP4203087B2 (ja) 2006-07-25 2008-12-24 株式会社沖データ 半導体複合装置、ｌｅｄプリントヘッド及び画像形成装置
JP4172515B2 (ja) * 2006-10-18 2008-10-29 ソニー株式会社 発光素子の製造方法
GB2447091B8 (en) * 2007-03-02 2010-01-13 Photonstar Led Ltd Vertical light emitting diodes
TWI346395B (en) 2007-03-02 2011-08-01 Advanced Optoelectronic Tech Packaging structure of laser diode surface mount device and fabricating method thereof
TW200841393A (en) 2007-04-02 2008-10-16 Miin-Jang Chen Optoelectronic device and method of fabricating the same
US7939932B2 (en) * 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
JP5493252B2 (ja) 2007-06-28 2014-05-14 日亜化学工業株式会社 半導体発光素子
JP5245594B2 (ja) * 2007-07-27 2013-07-24 日亜化学工業株式会社 発光装置及びその製造方法
JP2009076896A (ja) * 2007-08-31 2009-04-09 Panasonic Corp 半導体発光素子
JP2011501415A (ja) 2007-10-11 2011-01-06 ヤオ ジエ フォトディテクタアレイおよび半導体イメージインテンシファイア
WO2009061704A2 (en) * 2007-11-06 2009-05-14 Hcf Partners, L.P. Atomic layer deposition encapsulation
DE102008019902A1 (de) 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement
JP2009252798A (ja) * 2008-04-01 2009-10-29 Mitsumi Electric Co Ltd カーボンナノチューブ電界効果トランジスタおよびその製造方法
US20090289349A1 (en) 2008-05-21 2009-11-26 Spatial Photonics, Inc. Hermetic sealing of micro devices
US20100164083A1 (en) * 2008-12-29 2010-07-01 Numonyx B.V. Protective thin film coating in chip packaging
DE102009033686A1 (de) 2009-07-17 2011-01-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines anorganischen optoelektronischen Halbleiterbauteils
DE102009060749B4 (de) 2009-12-30 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
JP5864089B2 (ja) 2010-08-25 2016-02-17 日亜化学工業株式会社 発光装置の製造方法

Also Published As

Publication number Publication date
JP6001114B2 (ja) 2016-10-05
US20170005234A1 (en) 2017-01-05
DE102009058796A1 (de) 2011-06-22
US9768360B2 (en) 2017-09-19
US20120326178A1 (en) 2012-12-27
CN102668140B (zh) 2016-04-06
JP2015146431A (ja) 2015-08-13
EP2513984A1 (de) 2012-10-24
WO2011073027A1 (de) 2011-06-23
CN102668140A (zh) 2012-09-12
US9508903B2 (en) 2016-11-29
JP5710638B2 (ja) 2015-04-30
KR20120114311A (ko) 2012-10-16
JP2013514642A (ja) 2013-04-25
TW201143162A (en) 2011-12-01

Similar Documents

Publication Publication Date Title
TWI446594B (zh) 光電元件及製造光電元件之方法
US6838704B2 (en) Light emitting diode and method of making the same
US8237180B2 (en) Light emitting element including center electrode and thin wire electrode extending from periphery of the center electrode
US20130313604A1 (en) Method for Producing a Light-Emitting Semiconductor Component and Light-Emitting Semiconductor Component
JP3737494B2 (ja) 半導体発光素子及びその製造方法並びに半導体発光装置
US20090257466A1 (en) Optoelectronic Semiconductor Component and Method for the Production of an Optoelectronic Semiconductor Device
US8737445B2 (en) Laser diode assembly
CN101316026A (zh) 氮化物半导体激光器芯片及其制造方法
US10283676B2 (en) Light-emitting diode chip with one of a mirror layer and an adhesion-promoting layer for high efficiency and long service life
TWI553903B (zh) 發光元件及其製造方法
US20050035355A1 (en) Semiconductor light emitting diode and semiconductor light emitting device
WO2018097649A1 (ko) 반도체 소자 및 이를 포함하는 반도체 소자 패키지
TWI565169B (zh) 雷射二極體組件
CN115298917A (zh) 发光元件、发光元件单元、电子设备、发光装置、感测装置和通信装置
TWI511396B (zh) 雷射二極體組件
US12586986B2 (en) Light-emitting device
CN106463582A (zh) 发光半导体器件
US20190140145A1 (en) Light-Emitting Device and Method for Manufacturing a Light-Emitting Device
CN112018220B (zh) 垂直型发光二极管
CN111433919B (zh) 用于制造光电子半导体芯片的方法和光电子半导体芯片
KR102592990B1 (ko) 반도체 소자 및 제조 방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees