DE102004048723B4 - Herstellverfahren für ein Dünnschichttransistorarray-Substrat - Google Patents

Herstellverfahren für ein Dünnschichttransistorarray-Substrat Download PDF

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Publication number
DE102004048723B4
DE102004048723B4 DE102004048723A DE102004048723A DE102004048723B4 DE 102004048723 B4 DE102004048723 B4 DE 102004048723B4 DE 102004048723 A DE102004048723 A DE 102004048723A DE 102004048723 A DE102004048723 A DE 102004048723A DE 102004048723 B4 DE102004048723 B4 DE 102004048723B4
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Germany
Prior art keywords
pattern
electrode
passivation film
gate
substrate
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Expired - Fee Related
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DE102004048723A
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German (de)
English (en)
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DE102004048723A1 (de
Inventor
Soon Sung Gungpo Yoo
Heung Lyul Suwon Cho
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LG Display Co Ltd
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LG Display Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
DE102004048723A 2003-10-10 2004-10-06 Herstellverfahren für ein Dünnschichttransistorarray-Substrat Expired - Fee Related DE102004048723B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0070698 2003-10-10
KR10-2003-0070698A KR100500779B1 (ko) 2003-10-10 2003-10-10 박막 트랜지스터 어레이 기판의 제조 방법

Publications (2)

Publication Number Publication Date
DE102004048723A1 DE102004048723A1 (de) 2005-06-09
DE102004048723B4 true DE102004048723B4 (de) 2011-05-19

Family

ID=33411801

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004048723A Expired - Fee Related DE102004048723B4 (de) 2003-10-10 2004-10-06 Herstellverfahren für ein Dünnschichttransistorarray-Substrat

Country Status (8)

Country Link
US (1) US7078279B2 (ja)
JP (1) JP4475578B2 (ja)
KR (1) KR100500779B1 (ja)
CN (1) CN1326201C (ja)
DE (1) DE102004048723B4 (ja)
FR (1) FR2860918B1 (ja)
GB (1) GB2407704B (ja)
TW (1) TWI249814B (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100560400B1 (ko) * 2003-11-04 2006-03-14 엘지.필립스 엘시디 주식회사 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법
KR101112538B1 (ko) 2004-07-27 2012-03-13 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101107246B1 (ko) * 2004-12-24 2012-01-25 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
TWI287659B (en) 2005-08-25 2007-10-01 Chunghwa Picture Tubes Ltd Multi-domain vertical alignment liquid crystal display panel, thin film transistor array, and methods of fabricating the same
TWI339442B (en) 2005-12-09 2011-03-21 Samsung Mobile Display Co Ltd Flat panel display and method of fabricating the same
KR100818887B1 (ko) * 2005-12-14 2008-04-02 엘지.필립스 엘시디 주식회사 액정 표시장치 및 그 제조 방법
CN100367488C (zh) * 2006-02-13 2008-02-06 友达光电股份有限公司 薄膜晶体管阵列基板的制造方法
US7851788B2 (en) * 2006-02-28 2010-12-14 Pioneer Corporation Organic transistor and manufacturing method thereof
KR101228475B1 (ko) * 2006-06-05 2013-01-31 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
US20080023703A1 (en) * 2006-07-31 2008-01-31 Randy Hoffman System and method for manufacturing a thin-film device
KR101326134B1 (ko) * 2007-02-07 2013-11-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN100446222C (zh) * 2007-03-28 2008-12-24 友达光电股份有限公司 薄膜晶体管基板的制造方法
TWI383502B (zh) * 2007-10-02 2013-01-21 Chunghwa Picture Tubes Ltd 畫素結構及其製造方法
TWI396916B (zh) * 2009-07-17 2013-05-21 Chunghwa Picture Tubes Ltd 薄膜電晶體陣列基板之製作方法
KR20110061773A (ko) * 2009-12-02 2011-06-10 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
US8871590B2 (en) 2009-12-31 2014-10-28 Lg Display Co., Ltd. Thin film transistor array substrate, liquid crystal display device including the same and fabricating methods thereof
KR101801974B1 (ko) * 2009-12-31 2017-11-28 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 액정표시장치 및 이들의 제조방법
CN103151359B (zh) * 2013-03-14 2015-11-11 京东方科技集团股份有限公司 一种显示装置、阵列基板及其制作方法
KR102151235B1 (ko) * 2013-10-14 2020-09-03 삼성디스플레이 주식회사 표시 기판, 표시 기판의 제조 방법 및 표시 기판을 포함하는 표시 장치
CN107079560B (zh) * 2014-09-26 2018-09-25 东丽株式会社 有机el显示装置

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JPH05323373A (ja) * 1992-05-22 1993-12-07 Fujitsu Ltd 薄膜トランジスタパネルの製造方法
US5391507A (en) * 1993-09-03 1995-02-21 General Electric Company Lift-off fabrication method for self-aligned thin film transistors
US5527726A (en) * 1993-03-01 1996-06-18 General Electric Company Self-aligned thin-film transistor constructed using lift-off technique
US6019796A (en) * 1997-09-10 2000-02-01 Xerox Corporation Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
US6156583A (en) * 1998-06-13 2000-12-05 Lg Philips Lcd Co., Ltd. Method for manufacturing a liquid crystal display device
US20010005596A1 (en) * 1999-12-24 2001-06-28 Deuk Su Lee Method for manufacturing thin film transistor liquid crystal display
US20020106839A1 (en) * 2001-02-02 2002-08-08 International Business Machines Corporation Thin film transistor and method for manufacturing the same
JP2002250934A (ja) * 2001-02-26 2002-09-06 Sharp Corp 液晶用マトリクス基板の製造方法
US20030076452A1 (en) * 2001-10-22 2003-04-24 Samsung Electronics Co., Ltd. Contact for semiconductor and display devices

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EP0619601A2 (en) 1993-04-05 1994-10-12 General Electric Company Self-aligned thin-film transistor constructed using lift-off technique
JP2661561B2 (ja) * 1994-10-27 1997-10-08 日本電気株式会社 薄膜トランジスタおよびその製造方法
KR100225098B1 (ko) * 1996-07-02 1999-10-15 구자홍 박막트랜지스터의 제조방법
US5830774A (en) * 1996-06-24 1998-11-03 Motorola, Inc. Method for forming a metal pattern on a substrate
TW415109B (en) * 1999-04-01 2000-12-11 Hannstar Display Corp Structure and fabrication of thin-film transistor (TFT) array
KR100583979B1 (ko) * 2000-02-11 2006-05-26 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
KR100748857B1 (ko) 2001-03-30 2007-08-13 엘지.필립스 엘시디 주식회사 박막트랜지스터와 이를 포함하는 어레이기판 제조방법
KR100803177B1 (ko) * 2001-05-14 2008-02-14 삼성전자주식회사 액정표시장치용 박막 트랜지스터 및 그 제조방법
TW522570B (en) * 2001-11-06 2003-03-01 Hannstar Display Corp Manufacturing method of thin film transistor array substrate and its structure

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05323373A (ja) * 1992-05-22 1993-12-07 Fujitsu Ltd 薄膜トランジスタパネルの製造方法
US5527726A (en) * 1993-03-01 1996-06-18 General Electric Company Self-aligned thin-film transistor constructed using lift-off technique
US5391507A (en) * 1993-09-03 1995-02-21 General Electric Company Lift-off fabrication method for self-aligned thin film transistors
US6019796A (en) * 1997-09-10 2000-02-01 Xerox Corporation Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
US6156583A (en) * 1998-06-13 2000-12-05 Lg Philips Lcd Co., Ltd. Method for manufacturing a liquid crystal display device
US20010005596A1 (en) * 1999-12-24 2001-06-28 Deuk Su Lee Method for manufacturing thin film transistor liquid crystal display
US20020106839A1 (en) * 2001-02-02 2002-08-08 International Business Machines Corporation Thin film transistor and method for manufacturing the same
JP2002250934A (ja) * 2001-02-26 2002-09-06 Sharp Corp 液晶用マトリクス基板の製造方法
US20030076452A1 (en) * 2001-10-22 2003-04-24 Samsung Electronics Co., Ltd. Contact for semiconductor and display devices

Also Published As

Publication number Publication date
TW200514198A (en) 2005-04-16
FR2860918B1 (fr) 2007-02-23
US7078279B2 (en) 2006-07-18
US20050079657A1 (en) 2005-04-14
FR2860918A1 (fr) 2005-04-15
GB2407704B (en) 2005-09-14
JP4475578B2 (ja) 2010-06-09
DE102004048723A1 (de) 2005-06-09
CN1326201C (zh) 2007-07-11
JP2005123610A (ja) 2005-05-12
CN1606125A (zh) 2005-04-13
GB2407704A (en) 2005-05-04
KR100500779B1 (ko) 2005-07-12
GB0421633D0 (en) 2004-10-27
KR20050034924A (ko) 2005-04-15
TWI249814B (en) 2006-02-21

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OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

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