DE10196254T1 - Verfahren zum Polieren von Halbleiterwafern unter Verwendung eines beidseitigen Polierers - Google Patents

Verfahren zum Polieren von Halbleiterwafern unter Verwendung eines beidseitigen Polierers

Info

Publication number
DE10196254T1
DE10196254T1 DE10196254T DE10196254T DE10196254T1 DE 10196254 T1 DE10196254 T1 DE 10196254T1 DE 10196254 T DE10196254 T DE 10196254T DE 10196254 T DE10196254 T DE 10196254T DE 10196254 T1 DE10196254 T1 DE 10196254T1
Authority
DE
Germany
Prior art keywords
double
semiconductor wafers
polishing semiconductor
sided polisher
polisher
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10196254T
Other languages
English (en)
Other versions
DE10196254B4 (de
Inventor
Toru Taniguchi
Isoroku Ono
Seiji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumitomo Mitsubishi Silicon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Mitsubishi Silicon Corp filed Critical Sumitomo Mitsubishi Silicon Corp
Publication of DE10196254T1 publication Critical patent/DE10196254T1/de
Application granted granted Critical
Publication of DE10196254B4 publication Critical patent/DE10196254B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE10196254T 2000-05-31 2001-05-31 Verfahren zum Polieren von Halbleiterwafern unter Verwendung eines beidseitigen Polierers Expired - Fee Related DE10196254B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000163444A JP3791302B2 (ja) 2000-05-31 2000-05-31 両面研磨装置を用いた半導体ウェーハの研磨方法
JP2000-163444 2000-05-31
PCT/JP2001/004594 WO2001091970A1 (fr) 2000-05-31 2001-05-31 Procede de polissage de tranches de semiconducteurs avec un polisseur double-face

Publications (2)

Publication Number Publication Date
DE10196254T1 true DE10196254T1 (de) 2003-06-12
DE10196254B4 DE10196254B4 (de) 2010-12-02

Family

ID=18667194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196254T Expired - Fee Related DE10196254B4 (de) 2000-05-31 2001-05-31 Verfahren zum Polieren von Halbleiterwafern unter Verwendung eines beidseitigen Polierers

Country Status (7)

Country Link
US (1) US7470169B2 (de)
JP (1) JP3791302B2 (de)
KR (1) KR100779554B1 (de)
CN (1) CN1188251C (de)
DE (1) DE10196254B4 (de)
TW (1) TW559579B (de)
WO (1) WO2001091970A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8529315B2 (en) 2010-01-27 2013-09-10 Siltronic Ag Method for producing a semiconductor wafer
US8647173B2 (en) 2009-10-28 2014-02-11 Siltronic Ag Method for polishing a semiconductor wafer

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* Cited by examiner, † Cited by third party
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CN100380600C (zh) * 2002-03-28 2008-04-09 信越半导体株式会社 晶片的两面研磨装置及两面研磨方法
DE10235017A1 (de) * 2002-08-01 2004-02-12 Peter Wolters Werkzeugmaschinen Gmbh Vorrichtung zum Polieren von digitalen Speicherscheiben
US20040226654A1 (en) * 2002-12-17 2004-11-18 Akihisa Hongo Substrate processing apparatus and substrate processing method
JP4343020B2 (ja) * 2003-12-22 2009-10-14 株式会社住友金属ファインテック 両面研磨方法及び装置
JP4179192B2 (ja) 2004-03-08 2008-11-12 株式会社デンソー 内燃機関の燃焼状態検出装置
JP4727218B2 (ja) * 2004-12-10 2011-07-20 株式会社住友金属ファインテック 両面研磨用キャリア
JP4744250B2 (ja) * 2005-09-14 2011-08-10 株式会社岡本工作機械製作所 角形状基板の両面研磨装置および両面研磨方法
KR100728887B1 (ko) * 2005-12-20 2007-06-14 주식회사 실트론 실리콘 웨이퍼 양면 연마방법
JP5245319B2 (ja) * 2007-08-09 2013-07-24 富士通株式会社 研磨装置及び研磨方法、基板及び電子機器の製造方法
CN101491885B (zh) * 2008-01-24 2011-11-30 中芯国际集成电路制造(上海)有限公司 一种晶圆控片的研磨方法
JP5138407B2 (ja) * 2008-02-14 2013-02-06 セイコーインスツル株式会社 ウエハ及びウエハ研磨方法
JP5177290B2 (ja) * 2009-06-04 2013-04-03 株式会社Ｓｕｍｃｏ 固定砥粒加工装置及び固定砥粒加工方法、並びに、半導体ウェーハ製造方法
DE102009030292B4 (de) * 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
KR101698633B1 (ko) * 2009-10-14 2017-01-20 주식회사 쿠라레 연마 패드
US8647172B2 (en) 2010-03-12 2014-02-11 Wayne O. Duescher Wafer pads for fixed-spindle floating-platen lapping
US8602842B2 (en) 2010-03-12 2013-12-10 Wayne O. Duescher Three-point fixed-spindle floating-platen abrasive system
US8647171B2 (en) 2010-03-12 2014-02-11 Wayne O. Duescher Fixed-spindle floating-platen workpiece loader apparatus
US8740668B2 (en) 2010-03-12 2014-06-03 Wayne O. Duescher Three-point spindle-supported floating abrasive platen
US8696405B2 (en) 2010-03-12 2014-04-15 Wayne O. Duescher Pivot-balanced floating platen lapping machine
US8500515B2 (en) 2010-03-12 2013-08-06 Wayne O. Duescher Fixed-spindle and floating-platen abrasive system using spherical mounts
US8758088B2 (en) 2011-10-06 2014-06-24 Wayne O. Duescher Floating abrading platen configuration
US8647170B2 (en) 2011-10-06 2014-02-11 Wayne O. Duescher Laser alignment apparatus for rotary spindles
US8641476B2 (en) 2011-10-06 2014-02-04 Wayne O. Duescher Coplanar alignment apparatus for rotary spindles
CN102267080A (zh) * 2010-06-03 2011-12-07 上海峰弘环保科技有限公司 一种用于ic卡研磨加工的圆盘式双面抛光机
US8337280B2 (en) * 2010-09-14 2012-12-25 Duescher Wayne O High speed platen abrading wire-driven rotary workholder
US8430717B2 (en) 2010-10-12 2013-04-30 Wayne O. Duescher Dynamic action abrasive lapping workholder
JP5479390B2 (ja) * 2011-03-07 2014-04-23 信越半導体株式会社 シリコンウェーハの製造方法
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
CN104813448A (zh) * 2012-09-28 2015-07-29 圣戈本陶瓷及塑料股份有限公司 改进的微研磨工艺
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US20140120802A1 (en) * 2012-10-31 2014-05-01 Wayne O. Duescher Abrasive platen wafer surface optical monitoring system
DE102013201663B4 (de) * 2012-12-04 2020-04-23 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
CN103158059B (zh) * 2012-12-27 2015-11-18 浙江水晶光电科技股份有限公司 晶片研磨设备
DE102013206613B4 (de) * 2013-04-12 2018-03-08 Siltronic Ag Verfahren zum Polieren von Halbleiterscheiben mittels gleichzeitiger beidseitiger Politur
CN104842253A (zh) * 2014-02-19 2015-08-19 中国科学院上海硅酸盐研究所 用于碳化硅晶体的光学级平面加工的抛光装置及加工方法
JP6056793B2 (ja) * 2014-03-14 2017-01-11 信越半導体株式会社 両面研磨装置用キャリアの製造方法及び両面研磨方法
CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
JP6128198B1 (ja) * 2015-12-22 2017-05-17 株式会社Sumco ウェーハの両面研磨方法及びこれを用いたエピタキシャルウェーハの製造方法
SG11201806747QA (en) * 2016-02-16 2018-09-27 Shin Etsu Handotai Co Ltd Double-side polishing method and double-side polishing apparatus
JP6443370B2 (ja) * 2016-03-18 2018-12-26 信越半導体株式会社 両面研磨装置用のキャリアの製造方法およびウェーハの両面研磨方法
JP6589762B2 (ja) * 2016-07-13 2019-10-16 株式会社Sumco 両面研磨装置
JP6635003B2 (ja) * 2016-11-02 2020-01-22 株式会社Sumco 半導体ウェーハの両面研磨方法
CN108237468B (zh) * 2016-12-26 2021-08-03 台湾积体电路制造股份有限公司 厚度缩减装置及厚度缩减方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
CN111095491B (zh) * 2017-08-31 2023-05-30 胜高股份有限公司 硅晶片的双面抛光方法
CN107855910A (zh) * 2017-11-07 2018-03-30 中国兵器科学研究院宁波分院 双面抛光机驱动结构
CN107717715A (zh) * 2017-11-16 2018-02-23 无锡佳力欣精密机械有限公司 一种铜基止推轴承表面划痕处理工艺与装置
CN108058066A (zh) * 2017-12-05 2018-05-22 江苏师范大学 一种激光板条介质的大面加工方法
CN108067993B (zh) * 2018-01-10 2023-08-18 池州市星聚信息技术服务有限公司 一种硅片双面处理装置
CN109015338A (zh) * 2018-08-17 2018-12-18 铜陵晶越电子有限公司 一种带有平面度修整修正轮的晶片双面研磨机
CN109551311A (zh) * 2018-12-12 2019-04-02 大连理工大学 一种机械研磨或抛光过程中减小塌边现象的方法
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
CN110802503A (zh) * 2019-11-06 2020-02-18 西安奕斯伟硅片技术有限公司 一种研磨装置
CN111702654A (zh) * 2020-06-11 2020-09-25 深圳市易通光讯设备技术有限公司 一种单电机输入光纤研磨机芯总成
CN111805400A (zh) * 2020-07-17 2020-10-23 中国科学院微电子研究所 抛光装置
CN111958490B (zh) * 2020-08-06 2022-01-18 泉州市海恩德机电科技发展有限公司 可高速运转的圆周供水机构
CN113561051B (zh) * 2021-07-28 2022-04-19 上海申和投资有限公司 一种晶圆再生处理装置及控制系统
KR102473186B1 (ko) * 2022-05-30 2022-12-02 (주)디엠에스코리아 강판 표면 연마장치
CN115026705B (zh) * 2022-06-28 2024-04-12 广东先导微电子科技有限公司 抛光机

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647173B2 (en) 2009-10-28 2014-02-11 Siltronic Ag Method for polishing a semiconductor wafer
US8529315B2 (en) 2010-01-27 2013-09-10 Siltronic Ag Method for producing a semiconductor wafer

Also Published As

Publication number Publication date
US20030181141A1 (en) 2003-09-25
JP3791302B2 (ja) 2006-06-28
CN1441713A (zh) 2003-09-10
TW559579B (en) 2003-11-01
JP2001341069A (ja) 2001-12-11
WO2001091970A1 (fr) 2001-12-06
KR100779554B1 (ko) 2007-11-27
CN1188251C (zh) 2005-02-09
KR20030043793A (ko) 2003-06-02
DE10196254B4 (de) 2010-12-02
US7470169B2 (en) 2008-12-30

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