DE10010177A1 - Solarzelle - Google Patents
SolarzelleInfo
- Publication number
- DE10010177A1 DE10010177A1 DE10010177A DE10010177A DE10010177A1 DE 10010177 A1 DE10010177 A1 DE 10010177A1 DE 10010177 A DE10010177 A DE 10010177A DE 10010177 A DE10010177 A DE 10010177A DE 10010177 A1 DE10010177 A1 DE 10010177A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- solar cell
- layer
- film
- electron affinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 210
- 230000031700 light absorption Effects 0.000 title claims abstract description 37
- 239000010409 thin film Substances 0.000 title description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title 2
- 239000011787 zinc oxide Substances 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 31
- 229910052738 indium Inorganic materials 0.000 claims abstract description 31
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 9
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 8
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 8
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 8
- 229910052788 barium Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 20
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 15
- 150000004770 chalcogenides Chemical class 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 4
- -1 Si 3 N 4 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 207
- 239000011701 zinc Substances 0.000 description 80
- 238000006243 chemical reaction Methods 0.000 description 55
- 239000000758 substrate Substances 0.000 description 16
- 239000006104 solid solution Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 229910052717 sulfur Inorganic materials 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 229910003363 ZnMgO Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241001663154 Electron Species 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 229910007609 Zn—S Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical group [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (19)
die erste Halbleiterschicht frei von Cd ist,
die zweite Halbleiterschicht eine Lichtabsorptions schicht ist,
ein Bandabstand Eg1 der ersten Halbleiterschicht und ein Bandabstand Eg2 der zweiten Halbleiterschicht einer Beziehung: Eg1 < Eg2 genügen, und
eine Elektronenaffinität χ1 (eV) der ersten Halblei terschicht und eine Elektronenaffinität χ2(eV) der zwei ten Halbleiterschicht einer Beziehung: 0 ≦ (χ2-χ1) < 0,5 genügen.
wobei der Bandabstand Eg3 der dritten Halbleiter schicht und der Bandabstand Eg2 einer Beziehung: Eg3 < Eg2 genügen.
eine Elektronenaffinität χ3 (eV) der dritten Halblei terschicht und die Elektronenaffinität χ2 einer Bezie hung: (χ2-χ3) < 0,5 genügen, und
eine Dicke der dritten Halbleiterschicht nicht größer als 50 nm ist.
wobei ein Bandabstand EgINS der Isolationsschicht und der Bandabstand Eg2 einer Beziehung: EgINS < Eg2 genügen.
eine Elektronenaffinität χINS (eV) der Isolations schicht und die Elektronenaffinität χ2 einer Beziehung: (χ2-χINS) ≧ 0,5 genügen, und
eine Dicke der Isolationsschicht nicht größer als 50 nm ist.
wobei die Halbleiterschicht ein durch eine allgemeine Formel Zn1-ZCZO (wobei das Element C mindestens eines aus Be, Mg, Ca, Sr und Ba ausgewähltes ist, und 0 < Z < 1 ist) ausgedrücktes Oxid als eine Hauptkomponente auf weist.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-058768 | 1999-03-05 | ||
JP5876899 | 1999-03-05 | ||
DE10066271.4A DE10066271B8 (de) | 1999-03-05 | 2000-03-02 | Solarzelle |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10010177A1 true DE10010177A1 (de) | 2000-09-14 |
DE10010177B4 DE10010177B4 (de) | 2010-04-08 |
Family
ID=13093738
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10066271.4A Expired - Fee Related DE10066271B8 (de) | 1999-03-05 | 2000-03-02 | Solarzelle |
DE10010177A Expired - Fee Related DE10010177B4 (de) | 1999-03-05 | 2000-03-02 | Solarzelle mit einer p-Typ Lichtabsorptionsschicht und einer Cd-freien n-Typ Schicht, die einen größeren Bandabstand und eine größere Elektronenaffinität aufweist |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10066271.4A Expired - Fee Related DE10066271B8 (de) | 1999-03-05 | 2000-03-02 | Solarzelle |
Country Status (2)
Country | Link |
---|---|
US (1) | US6259016B1 (de) |
DE (2) | DE10066271B8 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006039331A1 (de) * | 2006-08-15 | 2008-02-28 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren |
WO2013134762A2 (en) * | 2012-03-09 | 2013-09-12 | First Solar, Inc. | Photovoltaic device and method of manufacture |
DE102014223485A1 (de) * | 2014-11-18 | 2016-05-19 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Schichtaufbau für eine Dünnschichtsolarzelle und Herstellungsverfahren |
DE102014224004A1 (de) * | 2014-11-25 | 2016-05-25 | crystalsol OÜ | Elektronisches Bauteil mit Zwischenschicht zwischen n- und p-dotierter Halbleiterschicht |
US11075318B2 (en) | 2014-05-22 | 2021-07-27 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Buffer layer film-forming method and buffer layer |
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GB2361480B (en) * | 2000-04-19 | 2002-06-19 | Murata Manufacturing Co | Method for forming p-type semiconductor film and light emitting device using the same |
JP4662616B2 (ja) | 2000-10-18 | 2011-03-30 | パナソニック株式会社 | 太陽電池 |
US7091136B2 (en) * | 2001-04-16 | 2006-08-15 | Basol Bulent M | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
JP2002329877A (ja) * | 2001-04-27 | 2002-11-15 | National Institute Of Advanced Industrial & Technology | Cu(Ga及び(又は)In)Se2薄膜層、Cu(InGa)(S、Se)2薄膜層、太陽電池、Cu(Ga及び(又は)In)Se2薄膜層の形成方法 |
WO2003009394A1 (en) * | 2001-07-18 | 2003-01-30 | Honda Giken Kogyo Kabushiki Kaisha | Method of film-forming transparent electrode layer and device therefor |
GB0127113D0 (en) * | 2001-11-10 | 2002-01-02 | Univ Sheffield | Copper indium based thin film photovoltaic devices and methods of making the same |
US7019208B2 (en) * | 2001-11-20 | 2006-03-28 | Energy Photovoltaics | Method of junction formation for CIGS photovoltaic devices |
US20050151131A1 (en) * | 2002-06-11 | 2005-07-14 | Wager John F.Iii | Polycrystalline thin-film solar cells |
JP2004158619A (ja) * | 2002-11-06 | 2004-06-03 | Matsushita Electric Ind Co Ltd | 電子デバイスおよびその製造方法 |
US7479596B2 (en) * | 2003-03-18 | 2009-01-20 | Panasonic Corporation | Solar cell and method for manufacturing the same |
EP1619728A4 (de) * | 2003-04-09 | 2006-08-09 | Matsushita Electric Ind Co Ltd | Solarzelle |
SE0301350D0 (sv) * | 2003-05-08 | 2003-05-08 | Forskarpatent I Uppsala Ab | A thin-film solar cell |
JP2005019742A (ja) * | 2003-06-26 | 2005-01-20 | Matsushita Electric Ind Co Ltd | 太陽電池 |
EP1705717B1 (de) * | 2004-01-13 | 2010-05-12 | Panasonic Corporation | Solarzelle und Herstellungsverfahren |
US7611573B2 (en) | 2004-04-02 | 2009-11-03 | Alliance For Sustainable Energy, Llc | ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells |
JP2006013028A (ja) * | 2004-06-24 | 2006-01-12 | National Institute Of Advanced Industrial & Technology | 化合物太陽電池及びその製造方法 |
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KR101144807B1 (ko) | 2007-09-18 | 2012-05-11 | 엘지전자 주식회사 | 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한cigs 박막형 태양전지, 및 그 제조 방법 |
US20090084963A1 (en) * | 2007-10-01 | 2009-04-02 | David, Joseph And Negley | Apparatus and methods to produce electrical energy by enhanced down-conversion of photons |
CN101809759B (zh) * | 2007-10-30 | 2012-06-20 | 三洋电机株式会社 | 太阳能电池 |
US8575478B2 (en) * | 2008-03-07 | 2013-11-05 | Showa Shell Sekiyu K.K. | Integrated structure of CIS based solar cell |
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US10211353B2 (en) * | 2008-04-14 | 2019-02-19 | Sunlight Photonics Inc. | Aligned bifacial solar modules |
FR2939240B1 (fr) * | 2008-12-03 | 2011-02-18 | Saint Gobain | Element en couches et dispositif photovoltaique comprenant un tel element |
JP5003698B2 (ja) * | 2009-02-18 | 2012-08-15 | Tdk株式会社 | 太陽電池、及び太陽電池の製造方法 |
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US20110011443A1 (en) * | 2009-07-17 | 2011-01-20 | Sanyo Electric Co., Ltd. | Solar battery module and manufacturing method thereof |
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JPH06283746A (ja) * | 1993-03-26 | 1994-10-07 | Matsushita Electric Ind Co Ltd | 透明導電膜の製造方法とそれを用いた光電変換半導体装置の製造方法 |
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US5356839A (en) | 1993-04-12 | 1994-10-18 | Midwest Research Institute | Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization |
JP3947575B2 (ja) | 1994-06-10 | 2007-07-25 | Hoya株式会社 | 導電性酸化物およびそれを用いた電極 |
DE4442824C1 (de) | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
JPH08195501A (ja) | 1995-01-18 | 1996-07-30 | Shin Etsu Chem Co Ltd | Ib−IIIb−VIb族化合物半導体 |
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JP3249407B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
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-
2000
- 2000-02-29 US US09/515,143 patent/US6259016B1/en not_active Expired - Lifetime
- 2000-03-02 DE DE10066271.4A patent/DE10066271B8/de not_active Expired - Fee Related
- 2000-03-02 DE DE10010177A patent/DE10010177B4/de not_active Expired - Fee Related
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DE102006039331B4 (de) * | 2006-08-15 | 2011-07-28 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg, 70565 | Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren |
DE102006039331B9 (de) * | 2006-08-15 | 2012-02-23 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren |
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WO2013134762A2 (en) * | 2012-03-09 | 2013-09-12 | First Solar, Inc. | Photovoltaic device and method of manufacture |
WO2013134762A3 (en) * | 2012-03-09 | 2014-05-01 | First Solar, Inc. | Photovoltaic device and method of manufacture |
US9508874B2 (en) | 2012-03-09 | 2016-11-29 | First Solar, Inc. | Photovoltaic device and method of manufacture |
US11075318B2 (en) | 2014-05-22 | 2021-07-27 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Buffer layer film-forming method and buffer layer |
DE102014223485A1 (de) * | 2014-11-18 | 2016-05-19 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Schichtaufbau für eine Dünnschichtsolarzelle und Herstellungsverfahren |
US11024758B2 (en) | 2014-11-18 | 2021-06-01 | Zentrum Fuer Sonnenenergie- Und Wasserstoff-Forschung Baden-Wuerttemberg | Layer structure for a thin-film solar cell and production method |
DE102014224004A1 (de) * | 2014-11-25 | 2016-05-25 | crystalsol OÜ | Elektronisches Bauteil mit Zwischenschicht zwischen n- und p-dotierter Halbleiterschicht |
Also Published As
Publication number | Publication date |
---|---|
US6259016B1 (en) | 2001-07-10 |
DE10066271B8 (de) | 2014-03-20 |
DE10066271B4 (de) | 2013-11-21 |
DE10010177B4 (de) | 2010-04-08 |
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