DE10066271B8 - Solarzelle - Google Patents
Solarzelle Download PDFInfo
- Publication number
- DE10066271B8 DE10066271B8 DE10066271.4A DE10066271A DE10066271B8 DE 10066271 B8 DE10066271 B8 DE 10066271B8 DE 10066271 A DE10066271 A DE 10066271A DE 10066271 B8 DE10066271 B8 DE 10066271B8
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- solar
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10010177A DE10010177B4 (de) | 1999-03-05 | 2000-03-02 | Solarzelle mit einer p-Typ Lichtabsorptionsschicht und einer Cd-freien n-Typ Schicht, die einen größeren Bandabstand und eine größere Elektronenaffinität aufweist |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5876899 | 1999-03-05 | ||
JP11-058768 | 1999-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10066271B4 DE10066271B4 (de) | 2013-11-21 |
DE10066271B8 true DE10066271B8 (de) | 2014-03-20 |
Family
ID=13093738
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10066271.4A Expired - Fee Related DE10066271B8 (de) | 1999-03-05 | 2000-03-02 | Solarzelle |
DE10010177A Expired - Fee Related DE10010177B4 (de) | 1999-03-05 | 2000-03-02 | Solarzelle mit einer p-Typ Lichtabsorptionsschicht und einer Cd-freien n-Typ Schicht, die einen größeren Bandabstand und eine größere Elektronenaffinität aufweist |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10010177A Expired - Fee Related DE10010177B4 (de) | 1999-03-05 | 2000-03-02 | Solarzelle mit einer p-Typ Lichtabsorptionsschicht und einer Cd-freien n-Typ Schicht, die einen größeren Bandabstand und eine größere Elektronenaffinität aufweist |
Country Status (2)
Country | Link |
---|---|
US (1) | US6259016B1 (de) |
DE (2) | DE10066271B8 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2361480B (en) * | 2000-04-19 | 2002-06-19 | Murata Manufacturing Co | Method for forming p-type semiconductor film and light emitting device using the same |
JP4662616B2 (ja) | 2000-10-18 | 2011-03-30 | パナソニック株式会社 | 太陽電池 |
EP1428243A4 (de) * | 2001-04-16 | 2008-05-07 | Bulent M Basol | Verfahren zur ausbildung eines halbleiterzusammensetzungsfilms zur herstellung elektronischer bauelemente und dadurch hergestellter film |
JP2002329877A (ja) * | 2001-04-27 | 2002-11-15 | National Institute Of Advanced Industrial & Technology | Cu(Ga及び(又は)In)Se2薄膜層、Cu(InGa)(S、Se)2薄膜層、太陽電池、Cu(Ga及び(又は)In)Se2薄膜層の形成方法 |
WO2003009394A1 (en) * | 2001-07-18 | 2003-01-30 | Honda Giken Kogyo Kabushiki Kaisha | Method of film-forming transparent electrode layer and device therefor |
GB0127113D0 (en) * | 2001-11-10 | 2002-01-02 | Univ Sheffield | Copper indium based thin film photovoltaic devices and methods of making the same |
US7019208B2 (en) * | 2001-11-20 | 2006-03-28 | Energy Photovoltaics | Method of junction formation for CIGS photovoltaic devices |
WO2003105238A1 (en) * | 2002-06-11 | 2003-12-18 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Polycrystalline thin-film solar cells |
JP2004158619A (ja) * | 2002-11-06 | 2004-06-03 | Matsushita Electric Ind Co Ltd | 電子デバイスおよびその製造方法 |
US7479596B2 (en) * | 2003-03-18 | 2009-01-20 | Panasonic Corporation | Solar cell and method for manufacturing the same |
CN1771610A (zh) * | 2003-04-09 | 2006-05-10 | 松下电器产业株式会社 | 太阳能电池 |
SE0301350D0 (sv) * | 2003-05-08 | 2003-05-08 | Forskarpatent I Uppsala Ab | A thin-film solar cell |
JP2005019742A (ja) * | 2003-06-26 | 2005-01-20 | Matsushita Electric Ind Co Ltd | 太陽電池 |
WO2005069386A1 (ja) * | 2004-01-13 | 2005-07-28 | Matsushita Electric Industrial Co., Ltd. | 太陽電池とその製造方法 |
WO2005105944A1 (en) * | 2004-04-02 | 2005-11-10 | Midwest Research Institute | ZnS/Zn(O, OH)S-BASED BUFFER LAYER DEPOSITION FOR SOLAR CELLS |
JP2006013028A (ja) * | 2004-06-24 | 2006-01-12 | National Institute Of Advanced Industrial & Technology | 化合物太陽電池及びその製造方法 |
US7196262B2 (en) * | 2005-06-20 | 2007-03-27 | Solyndra, Inc. | Bifacial elongated solar cell devices |
DE102005046908A1 (de) * | 2005-09-30 | 2007-04-05 | Merck Patent Gmbh | Elektrochemische Abscheidung von Selen in ionischen Flüssigkeiten |
DE102006039331C5 (de) * | 2006-08-15 | 2013-08-22 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren |
KR101144807B1 (ko) | 2007-09-18 | 2012-05-11 | 엘지전자 주식회사 | 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한cigs 박막형 태양전지, 및 그 제조 방법 |
WO2009046060A2 (en) * | 2007-10-01 | 2009-04-09 | Davis, Joseph And Negley | Apparatus and methods to produce electrical energy by enhanced down-conversion of photons |
JP4940309B2 (ja) * | 2007-10-30 | 2012-05-30 | 三洋電機株式会社 | 太陽電池 |
WO2009110092A1 (ja) * | 2008-03-07 | 2009-09-11 | 昭和シェル石油株式会社 | Cis系太陽電池の積層構造、及び集積構造 |
WO2009110093A1 (ja) * | 2008-03-07 | 2009-09-11 | 昭和シェル石油株式会社 | Cis系太陽電池の集積構造 |
US10211353B2 (en) * | 2008-04-14 | 2019-02-19 | Sunlight Photonics Inc. | Aligned bifacial solar modules |
FR2939240B1 (fr) * | 2008-12-03 | 2011-02-18 | Saint Gobain | Element en couches et dispositif photovoltaique comprenant un tel element |
JP5003698B2 (ja) * | 2009-02-18 | 2012-08-15 | Tdk株式会社 | 太陽電池、及び太陽電池の製造方法 |
JP5287380B2 (ja) * | 2009-03-13 | 2013-09-11 | Tdk株式会社 | 太陽電池、及び太陽電池の製造方法 |
US20110011443A1 (en) * | 2009-07-17 | 2011-01-20 | Sanyo Electric Co., Ltd. | Solar battery module and manufacturing method thereof |
KR20110023007A (ko) * | 2009-08-28 | 2011-03-08 | 삼성전자주식회사 | 박막 태양 전지 및 이의 제조방법 |
KR101072089B1 (ko) | 2009-09-30 | 2011-10-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
TWI514608B (zh) * | 2010-01-14 | 2015-12-21 | Dow Global Technologies Llc | 具曝露式導電柵格之防溼光伏打裝置 |
US9059349B2 (en) * | 2010-02-09 | 2015-06-16 | Dow Global Technologies Llc | Moisture resistant photovoltaic devices with improved adhesion of barrier film |
TWI520367B (zh) * | 2010-02-09 | 2016-02-01 | 陶氏全球科技公司 | 具透明導電阻擋層之光伏打裝置 |
US8546176B2 (en) | 2010-04-22 | 2013-10-01 | Tsmc Solid State Lighting Ltd. | Forming chalcogenide semiconductor absorbers |
WO2012012700A1 (en) * | 2010-07-23 | 2012-01-26 | First Solar, Inc. | Buffer layer formation |
WO2012040299A2 (en) | 2010-09-22 | 2012-03-29 | First Solar, Inc | A thin-film photovoltaic device with a zinc magnesium oxide window layer |
KR101283140B1 (ko) | 2011-01-26 | 2013-07-05 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
WO2013034155A2 (en) * | 2011-09-06 | 2013-03-14 | Vesborg v/Peter Christian Kjærgaard Vesborg | Collapsible photovoltaic module for a large-scale solar power plant |
JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP6265362B2 (ja) * | 2012-02-27 | 2018-01-24 | 日東電工株式会社 | Cigs系化合物太陽電池 |
US9508874B2 (en) * | 2012-03-09 | 2016-11-29 | First Solar, Inc. | Photovoltaic device and method of manufacture |
JP2013229572A (ja) * | 2012-03-26 | 2013-11-07 | Toyota Central R&D Labs Inc | 光電素子 |
JP6083785B2 (ja) | 2012-08-24 | 2017-02-22 | 日東電工株式会社 | 化合物太陽電池およびその製造方法 |
WO2014037790A1 (en) * | 2012-09-05 | 2014-03-13 | Zinniatek Limited | Photovoltaic devices with three dimensional surface features and methods of making the same |
EP2921467B1 (de) * | 2012-11-19 | 2019-02-06 | Tosoh Corporation | Oxidsinter, sputtertarget damit und oxidfolie |
FR3006109B1 (fr) * | 2013-05-24 | 2016-09-16 | Commissariat Energie Atomique | Procede de realisation de la jonction p-n d'une cellule photovoltaique en couches minces et procede d'obtention correspondant d'une cellule photovoltaique. |
DE112014006695T5 (de) | 2014-05-22 | 2017-02-16 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Pufferschichtfilm-Bildungsverfahren und Pufferschicht |
DE102014223485A1 (de) * | 2014-11-18 | 2016-05-19 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Schichtaufbau für eine Dünnschichtsolarzelle und Herstellungsverfahren |
DE102014224004A1 (de) * | 2014-11-25 | 2016-05-25 | crystalsol OÜ | Elektronisches Bauteil mit Zwischenschicht zwischen n- und p-dotierter Halbleiterschicht |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4612411A (en) * | 1985-06-04 | 1986-09-16 | Atlantic Richfield Company | Thin film solar cell with ZnO window layer |
US5141564A (en) * | 1988-05-03 | 1992-08-25 | The Boeing Company | Mixed ternary heterojunction solar cell |
JPH06283746A (ja) * | 1993-03-26 | 1994-10-07 | Matsushita Electric Ind Co Ltd | 透明導電膜の製造方法とそれを用いた光電変換半導体装置の製造方法 |
US5843341A (en) * | 1994-06-10 | 1998-12-01 | Hoya Corporation | Electro-conductive oxide electrodes and devices using the same |
Family Cites Families (27)
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IL46896A (en) * | 1974-03-27 | 1977-07-31 | Innotech Corp | Semiconductive device |
US4016586A (en) * | 1974-03-27 | 1977-04-05 | Innotech Corporation | Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
US3978510A (en) | 1974-07-29 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Heterojunction photovoltaic devices employing i-iii-vi compounds |
US4106951A (en) * | 1976-08-12 | 1978-08-15 | Uce, Inc. | Photovoltaic semiconductor device using an organic material as an active layer |
US4335266A (en) | 1980-12-31 | 1982-06-15 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
IL78822A (en) | 1985-05-10 | 1989-12-15 | Hahn Meitner Inst Berlin Gmbh | Solar cells on the basis of culns2 |
JPS6428967A (en) | 1987-07-24 | 1989-01-31 | Fuji Electric Co Ltd | Formation of chalcopyrite optoelectric transducer |
US5078804A (en) | 1989-06-27 | 1992-01-07 | The Boeing Company | I-III-VI2 based solar cell utilizing the structure CuInGaSe2 CdZnS/ZnO |
US5112410A (en) | 1989-06-27 | 1992-05-12 | The Boeing Company | Cadmium zinc sulfide by solution growth |
JPH0364973A (ja) | 1989-08-03 | 1991-03-20 | Mitsui Toatsu Chem Inc | 光起電力素子 |
DE59009771D1 (de) | 1990-07-24 | 1995-11-16 | Siemens Ag | Verfahren zur Herstellung einer Chalkopyrit-Solarzelle. |
JP2719039B2 (ja) | 1990-09-21 | 1998-02-25 | 株式会社富士電機総合研究所 | CuInSe▲下2▼系化合物薄膜の形成方法 |
JPH0563224A (ja) | 1991-09-02 | 1993-03-12 | Fuji Electric Co Ltd | 薄膜太陽電池の製造方法 |
JPH05262504A (ja) | 1991-09-27 | 1993-10-12 | Matsushita Electric Ind Co Ltd | 化合物半導体、その薄膜製造方法及びそれを用いた半導体装置 |
EP0662247B1 (de) | 1992-09-22 | 1999-03-10 | Siemens Aktiengesellschaft | Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat |
US5474939A (en) | 1992-12-30 | 1995-12-12 | Siemens Solar Industries International | Method of making thin film heterojunction solar cell |
US5356839A (en) | 1993-04-12 | 1994-10-18 | Midwest Research Institute | Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization |
US5441897A (en) | 1993-04-12 | 1995-08-15 | Midwest Research Institute | Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells |
DE4442824C1 (de) | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
JPH08195501A (ja) | 1995-01-18 | 1996-07-30 | Shin Etsu Chem Co Ltd | Ib−IIIb−VIb族化合物半導体 |
JP3249342B2 (ja) | 1995-05-29 | 2002-01-21 | 昭和シェル石油株式会社 | ヘテロ接合薄膜太陽電池及びその製造方法 |
JP3244408B2 (ja) | 1995-09-13 | 2002-01-07 | 松下電器産業株式会社 | 薄膜太陽電池及びその製造方法 |
JPH09199741A (ja) * | 1996-01-16 | 1997-07-31 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池 |
EP0837511B1 (de) * | 1996-10-15 | 2005-09-14 | Matsushita Electric Industrial Co., Ltd | Sonnenzelle und Herstellungsverfahren |
JP3249407B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
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US5948176A (en) * | 1997-09-29 | 1999-09-07 | Midwest Research Institute | Cadmium-free junction fabrication process for CuInSe2 thin film solar cells |
-
2000
- 2000-02-29 US US09/515,143 patent/US6259016B1/en not_active Expired - Lifetime
- 2000-03-02 DE DE10066271.4A patent/DE10066271B8/de not_active Expired - Fee Related
- 2000-03-02 DE DE10010177A patent/DE10010177B4/de not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4612411A (en) * | 1985-06-04 | 1986-09-16 | Atlantic Richfield Company | Thin film solar cell with ZnO window layer |
US5141564A (en) * | 1988-05-03 | 1992-08-25 | The Boeing Company | Mixed ternary heterojunction solar cell |
JPH06283746A (ja) * | 1993-03-26 | 1994-10-07 | Matsushita Electric Ind Co Ltd | 透明導電膜の製造方法とそれを用いた光電変換半導体装置の製造方法 |
US5843341A (en) * | 1994-06-10 | 1998-12-01 | Hoya Corporation | Electro-conductive oxide electrodes and devices using the same |
Non-Patent Citations (2)
Title |
---|
Ohtomo, A. [u.a.]: MgxZn1-xO as a II-VI widegap semiconductor alloy. In: Applied Physics Letters. ISSN 0003-6951. 1998, Vol. 72, Nr. 19, S. 2466-2468 |
Ohtomo, A. [u.a.]: MgZnO as a II-VI widegap semiconductor alloy. In: Applied Physics Letters. ISSN 0003-6951. 1998, Vol. 72, Nr. 19, S. 2466-2468 * |
Also Published As
Publication number | Publication date |
---|---|
DE10010177B4 (de) | 2010-04-08 |
DE10066271B4 (de) | 2013-11-21 |
DE10010177A1 (de) | 2000-09-14 |
US6259016B1 (en) | 2001-07-10 |
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OP8 | Request for examination as to paragraph 44 patent law | ||
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Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
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Effective date: 20140222 |
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R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |