JPS6428967A - Formation of chalcopyrite optoelectric transducer - Google Patents

Formation of chalcopyrite optoelectric transducer

Info

Publication number
JPS6428967A
JPS6428967A JP62184970A JP18497087A JPS6428967A JP S6428967 A JPS6428967 A JP S6428967A JP 62184970 A JP62184970 A JP 62184970A JP 18497087 A JP18497087 A JP 18497087A JP S6428967 A JPS6428967 A JP S6428967A
Authority
JP
Japan
Prior art keywords
cuinx2
film
laser beams
chalcopyrite
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62184970A
Other languages
Japanese (ja)
Inventor
Toshio Hama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62184970A priority Critical patent/JPS6428967A/en
Publication of JPS6428967A publication Critical patent/JPS6428967A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To control stoichiometry and a particle diameter of CuInX2 so is to improve characteristics for a photoelectric conversion element, by using a spray system to form a CuInX2 film and next irradiating this film with laser beams. CONSTITUTION:When a raw solution 33 is sprayed through a spray nozzle 34 on a substrate 32 heated by a heater 31 in a reaction chamber 30, a reaction of heat decomposition occurs on the substrate 32 end a CuInX2 film is formed. In succession, laser beams 35 are made incident to a window 36 of the reaction chamber 30, and they are scanned and radiated on the CuInX2 film by a reflection mirror 37 in a servo motor driving system. After the CuInX2 film is formed in a spray system, stoichiometry of Cu, In, and X in the CuInX2 film is improved by irradiating the film with laser beams. Further a particle diameter of CuInX2 can be controlled to be 1mum or more, and characteristics of the photoelectric conversion element can be improved accordingly.
JP62184970A 1987-07-24 1987-07-24 Formation of chalcopyrite optoelectric transducer Pending JPS6428967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62184970A JPS6428967A (en) 1987-07-24 1987-07-24 Formation of chalcopyrite optoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62184970A JPS6428967A (en) 1987-07-24 1987-07-24 Formation of chalcopyrite optoelectric transducer

Publications (1)

Publication Number Publication Date
JPS6428967A true JPS6428967A (en) 1989-01-31

Family

ID=16162539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62184970A Pending JPS6428967A (en) 1987-07-24 1987-07-24 Formation of chalcopyrite optoelectric transducer

Country Status (1)

Country Link
JP (1) JPS6428967A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259016B1 (en) 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell
US6534704B2 (en) 2000-10-18 2003-03-18 Matsushita Electric Industrial Co., Ltd. Solar cell
JP2010225884A (en) * 2009-03-24 2010-10-07 Honda Motor Co Ltd Method of manufacturing thin-film solar cell
JP2013541835A (en) * 2010-09-03 2013-11-14 テトラサン インコーポレイテッド Fine-line metallization of photovoltaic devices by partial lift-off of optical coatings

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259016B1 (en) 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell
US6534704B2 (en) 2000-10-18 2003-03-18 Matsushita Electric Industrial Co., Ltd. Solar cell
JP2010225884A (en) * 2009-03-24 2010-10-07 Honda Motor Co Ltd Method of manufacturing thin-film solar cell
JP2013541835A (en) * 2010-09-03 2013-11-14 テトラサン インコーポレイテッド Fine-line metallization of photovoltaic devices by partial lift-off of optical coatings
JP2015038992A (en) * 2010-09-03 2015-02-26 テトラサン インコーポレイテッド Fine line metallization of photovoltaic device by partial lift-off of optical coating

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