JPS6439723A - Selectively heating method for substrate - Google Patents
Selectively heating method for substrateInfo
- Publication number
- JPS6439723A JPS6439723A JP19661187A JP19661187A JPS6439723A JP S6439723 A JPS6439723 A JP S6439723A JP 19661187 A JP19661187 A JP 19661187A JP 19661187 A JP19661187 A JP 19661187A JP S6439723 A JPS6439723 A JP S6439723A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- heated
- optical energy
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To reduce the diffraction of a light and to selectively heat a substrate of a fine pattern by depositing a reflecting film which does not absorb an optical energy, pattern-forming the film only on a section necessary to be heated thereby opening it, and irradiating it with the optical energy to heat the substrate of the opening section of the film. CONSTITUTION:After a whole substrate is covered with a reflecting film 9, it is patterned by a photolithography technique. When, the film 9 is irradiated from above with an infrared ray 10 to be heated, only the vicinity of a region 7 requiring heating is heated, but the other section does not absorb optical energy due to the reflecting film 9 and is not heated. Then, the film 9 is removed by etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19661187A JPS6439723A (en) | 1987-08-06 | 1987-08-06 | Selectively heating method for substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19661187A JPS6439723A (en) | 1987-08-06 | 1987-08-06 | Selectively heating method for substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6439723A true JPS6439723A (en) | 1989-02-10 |
Family
ID=16360636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19661187A Pending JPS6439723A (en) | 1987-08-06 | 1987-08-06 | Selectively heating method for substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6439723A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010061619A1 (en) * | 2008-11-28 | 2010-06-03 | 住友化学株式会社 | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
WO2010061615A1 (en) * | 2008-11-28 | 2010-06-03 | 住友化学株式会社 | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
JP2014060423A (en) * | 2006-03-08 | 2014-04-03 | Applied Materials Inc | Method and device for heat treated structure formed on substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169125A (en) * | 1983-03-16 | 1984-09-25 | Ushio Inc | Method for heating semiconductor wafer |
JPS61170017A (en) * | 1985-01-23 | 1986-07-31 | Sharp Corp | Manufacture of semiconductor device |
JPS62147724A (en) * | 1985-12-20 | 1987-07-01 | Nec Corp | Manufacture of semiconductor integrated circuit device |
-
1987
- 1987-08-06 JP JP19661187A patent/JPS6439723A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169125A (en) * | 1983-03-16 | 1984-09-25 | Ushio Inc | Method for heating semiconductor wafer |
JPS61170017A (en) * | 1985-01-23 | 1986-07-31 | Sharp Corp | Manufacture of semiconductor device |
JPS62147724A (en) * | 1985-12-20 | 1987-07-01 | Nec Corp | Manufacture of semiconductor integrated circuit device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014060423A (en) * | 2006-03-08 | 2014-04-03 | Applied Materials Inc | Method and device for heat treated structure formed on substrate |
WO2010061619A1 (en) * | 2008-11-28 | 2010-06-03 | 住友化学株式会社 | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
WO2010061615A1 (en) * | 2008-11-28 | 2010-06-03 | 住友化学株式会社 | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
JP2010153847A (en) * | 2008-11-28 | 2010-07-08 | Sumitomo Chemical Co Ltd | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
JP2010153845A (en) * | 2008-11-28 | 2010-07-08 | Sumitomo Chemical Co Ltd | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
CN102210010A (en) * | 2008-11-28 | 2011-10-05 | 住友化学株式会社 | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
US8709904B2 (en) | 2008-11-28 | 2014-04-29 | Sumitomo Chemical Company, Limited | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
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