JPS6439723A - Selectively heating method for substrate - Google Patents

Selectively heating method for substrate

Info

Publication number
JPS6439723A
JPS6439723A JP19661187A JP19661187A JPS6439723A JP S6439723 A JPS6439723 A JP S6439723A JP 19661187 A JP19661187 A JP 19661187A JP 19661187 A JP19661187 A JP 19661187A JP S6439723 A JPS6439723 A JP S6439723A
Authority
JP
Japan
Prior art keywords
film
substrate
heated
optical energy
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19661187A
Other languages
Japanese (ja)
Inventor
Mutsumi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP19661187A priority Critical patent/JPS6439723A/en
Publication of JPS6439723A publication Critical patent/JPS6439723A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To reduce the diffraction of a light and to selectively heat a substrate of a fine pattern by depositing a reflecting film which does not absorb an optical energy, pattern-forming the film only on a section necessary to be heated thereby opening it, and irradiating it with the optical energy to heat the substrate of the opening section of the film. CONSTITUTION:After a whole substrate is covered with a reflecting film 9, it is patterned by a photolithography technique. When, the film 9 is irradiated from above with an infrared ray 10 to be heated, only the vicinity of a region 7 requiring heating is heated, but the other section does not absorb optical energy due to the reflecting film 9 and is not heated. Then, the film 9 is removed by etching.
JP19661187A 1987-08-06 1987-08-06 Selectively heating method for substrate Pending JPS6439723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19661187A JPS6439723A (en) 1987-08-06 1987-08-06 Selectively heating method for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19661187A JPS6439723A (en) 1987-08-06 1987-08-06 Selectively heating method for substrate

Publications (1)

Publication Number Publication Date
JPS6439723A true JPS6439723A (en) 1989-02-10

Family

ID=16360636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19661187A Pending JPS6439723A (en) 1987-08-06 1987-08-06 Selectively heating method for substrate

Country Status (1)

Country Link
JP (1) JPS6439723A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010061619A1 (en) * 2008-11-28 2010-06-03 住友化学株式会社 Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus
WO2010061615A1 (en) * 2008-11-28 2010-06-03 住友化学株式会社 Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus
JP2014060423A (en) * 2006-03-08 2014-04-03 Applied Materials Inc Method and device for heat treated structure formed on substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169125A (en) * 1983-03-16 1984-09-25 Ushio Inc Method for heating semiconductor wafer
JPS61170017A (en) * 1985-01-23 1986-07-31 Sharp Corp Manufacture of semiconductor device
JPS62147724A (en) * 1985-12-20 1987-07-01 Nec Corp Manufacture of semiconductor integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169125A (en) * 1983-03-16 1984-09-25 Ushio Inc Method for heating semiconductor wafer
JPS61170017A (en) * 1985-01-23 1986-07-31 Sharp Corp Manufacture of semiconductor device
JPS62147724A (en) * 1985-12-20 1987-07-01 Nec Corp Manufacture of semiconductor integrated circuit device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014060423A (en) * 2006-03-08 2014-04-03 Applied Materials Inc Method and device for heat treated structure formed on substrate
WO2010061619A1 (en) * 2008-11-28 2010-06-03 住友化学株式会社 Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus
WO2010061615A1 (en) * 2008-11-28 2010-06-03 住友化学株式会社 Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus
JP2010153847A (en) * 2008-11-28 2010-07-08 Sumitomo Chemical Co Ltd Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus
JP2010153845A (en) * 2008-11-28 2010-07-08 Sumitomo Chemical Co Ltd Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus
CN102210010A (en) * 2008-11-28 2011-10-05 住友化学株式会社 Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus
US8709904B2 (en) 2008-11-28 2014-04-29 Sumitomo Chemical Company, Limited Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus

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