DE68919399T2 - Dünnschichtsolarzelle und deren Herstellungsverfahren. - Google Patents

Dünnschichtsolarzelle und deren Herstellungsverfahren.

Info

Publication number
DE68919399T2
DE68919399T2 DE68919399T DE68919399T DE68919399T2 DE 68919399 T2 DE68919399 T2 DE 68919399T2 DE 68919399 T DE68919399 T DE 68919399T DE 68919399 T DE68919399 T DE 68919399T DE 68919399 T2 DE68919399 T2 DE 68919399T2
Authority
DE
Germany
Prior art keywords
thin
solar cell
manufacturing process
film solar
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68919399T
Other languages
English (en)
Other versions
DE68919399D1 (de
Inventor
Gary A Pollock
Kim W Mitchell
James H Ermer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shell Erneuerbare Energien GmbH
Original Assignee
Siemens Solar Industries LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Solar Industries LP filed Critical Siemens Solar Industries LP
Application granted granted Critical
Publication of DE68919399D1 publication Critical patent/DE68919399D1/de
Publication of DE68919399T2 publication Critical patent/DE68919399T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
DE68919399T 1988-09-22 1989-08-09 Dünnschichtsolarzelle und deren Herstellungsverfahren. Expired - Lifetime DE68919399T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/247,802 US4915745A (en) 1988-09-22 1988-09-22 Thin film solar cell and method of making

Publications (2)

Publication Number Publication Date
DE68919399D1 DE68919399D1 (de) 1994-12-22
DE68919399T2 true DE68919399T2 (de) 1995-05-04

Family

ID=22936445

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919399T Expired - Lifetime DE68919399T2 (de) 1988-09-22 1989-08-09 Dünnschichtsolarzelle und deren Herstellungsverfahren.

Country Status (4)

Country Link
US (1) US4915745A (de)
EP (1) EP0360403B1 (de)
JP (1) JP2754248B2 (de)
DE (1) DE68919399T2 (de)

Families Citing this family (154)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5141564A (en) * 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
US5028274A (en) * 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
DE4103291A1 (de) * 1990-09-22 1992-04-02 Battelle Institut E V Verfahren zur herstellung einer absorberschicht fuer solarzellen mit hilfe galvanischer abscheidetechnik
EP0574716B1 (de) * 1992-05-19 1996-08-21 Matsushita Electric Industrial Co., Ltd. Methode zur Herstellung einer Zusammensetzung des Typs Chalkopyrit
US5474939A (en) * 1992-12-30 1995-12-12 Siemens Solar Industries International Method of making thin film heterojunction solar cell
JP3337255B2 (ja) * 1993-02-15 2002-10-21 松下電器産業株式会社 カルコパイライト構造半導体薄膜とその製造方法、薄膜太陽電池の製造方法、および発光装置の製造方法
US5436204A (en) * 1993-04-12 1995-07-25 Midwest Research Institute Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications
US5356839A (en) * 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
US5477088A (en) * 1993-05-12 1995-12-19 Rockett; Angus A. Multi-phase back contacts for CIS solar cells
DE4333407C1 (de) * 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
SE508676C2 (sv) * 1994-10-21 1998-10-26 Nordic Solar Energy Ab Förfarande för framställning av tunnfilmssolceller
US5918111A (en) * 1995-03-15 1999-06-29 Matsushita Electric Industrial Co., Ltd. Method and apparatus for manufacturing chalcopyrite semiconductor thin films
US5772431A (en) * 1995-05-22 1998-06-30 Yazaki Corporation Thin-film solar cell manufacturing apparatus and manufacturing method
KR100232506B1 (ko) * 1995-06-27 1999-12-01 포만 제프리 엘. 전기적 접속을 제공하는 배선 구조 및 도체와 그 도체형성방법
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
US5674555A (en) * 1995-11-30 1997-10-07 University Of Delaware Process for preparing group Ib-IIIa-VIa semiconducting films
DE19611996C1 (de) * 1996-03-26 1997-09-11 Siemens Solar Gmbh Solarzelle mit einer Chalkopyritabsorberschicht und Verfahren zu ihrer Herstellung
JP3249407B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
US6258620B1 (en) 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
JP2000091603A (ja) * 1998-09-07 2000-03-31 Honda Motor Co Ltd 太陽電池
US6323417B1 (en) 1998-09-29 2001-11-27 Lockheed Martin Corporation Method of making I-III-VI semiconductor materials for use in photovoltaic cells
US6307148B1 (en) 1999-03-29 2001-10-23 Shinko Electric Industries Co., Ltd. Compound semiconductor solar cell and production method thereof
US6150603A (en) * 1999-04-23 2000-11-21 Hughes Electronics Corporation Bilayer passivation structure for photovoltaic cells
DE19921515A1 (de) 1999-05-10 2000-11-30 Ist Inst Fuer Solartechnologie Dünnschichtsolarzelle auf der Basis der Ia/IIIb/VIa- Verbindungshalbleiter und Verfahren zu ihrer Herstellung
US6347175B1 (en) * 1999-07-14 2002-02-12 Corning Incorporated Solderable thin film
AU2249201A (en) * 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
DE10004733C2 (de) * 2000-01-28 2003-12-11 Hahn Meitner Inst Berlin Gmbh Dünnfilm-Halbleiterbauelement mit einer Chalkopyritschicht und Verfahren zu seiner Herstellung sowie Verwendung des Verfahrens zur Herstellung einer Dünnfilm-Solarzelle
FR2820241B1 (fr) * 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
DE10127255A1 (de) * 2001-06-05 2003-01-16 Univ Stuttgart Konditionierung von Glasoberflächen für den Transfer von CIGS-Solarzellen auf flexible Kunstoffsubstrate
US20050006221A1 (en) * 2001-07-06 2005-01-13 Nobuyoshi Takeuchi Method for forming light-absorbing layer
JP4320525B2 (ja) * 2002-03-25 2009-08-26 本田技研工業株式会社 光吸収層の作製方法および装置
US7141863B1 (en) 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
JP4064340B2 (ja) * 2003-12-25 2008-03-19 昭和シェル石油株式会社 集積型薄膜太陽電池の製造方法
JP2006186200A (ja) * 2004-12-28 2006-07-13 Showa Shell Sekiyu Kk プリカーサ膜及びその製膜方法
JP4131965B2 (ja) * 2004-12-28 2008-08-13 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法
AU2006243448B2 (en) * 2005-05-05 2011-09-01 H.C. Starck Inc. Coating process for manufacture or reprocessing of sputter targets and X-ray anodes
JP5065248B2 (ja) * 2005-05-05 2012-10-31 ハー．ツェー．スタルク ゲゼルシャフト ミット ベシュレンクテル ハフツング 基材表面の被覆法及び被覆製品
US20070093006A1 (en) * 2005-10-24 2007-04-26 Basol Bulent M Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto
US7713773B2 (en) * 2005-11-02 2010-05-11 Solopower, Inc. Contact layers for thin film solar cells employing group IBIIIAVIA compound absorbers
US20070227633A1 (en) * 2006-04-04 2007-10-04 Basol Bulent M Composition control for roll-to-roll processed photovoltaic films
US7736913B2 (en) * 2006-04-04 2010-06-15 Solopower, Inc. Composition control for photovoltaic thin film manufacturing
US7923281B2 (en) * 2006-04-13 2011-04-12 Solopower, Inc. Roll-to-roll processing method and tools for electroless deposition of thin layers
US7585547B2 (en) * 2006-04-13 2009-09-08 Solopower, Inc. Method and apparatus to form thin layers of materials on a base
US7541067B2 (en) * 2006-04-13 2009-06-02 Solopower, Inc. Method and apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells
RU2435874C2 (ru) 2006-04-14 2011-12-10 СИЛИКА ТЕК, ЭлЭлСи Установка плазменного осаждения и способ изготовления солнечных элементов
US9105776B2 (en) * 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
US8017860B2 (en) * 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US20080023059A1 (en) * 2006-07-25 2008-01-31 Basol Bulent M Tandem solar cell structures and methods of manufacturing same
US20080023336A1 (en) * 2006-07-26 2008-01-31 Basol Bulent M Technique for doping compound layers used in solar cell fabrication
JP5246839B2 (ja) * 2006-08-24 2013-07-24 独立行政法人産業技術総合研究所 半導体薄膜の製造方法、半導体薄膜の製造装置、光電変換素子の製造方法及び光電変換素子
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
MX2009004773A (es) * 2006-11-07 2009-05-21 Starck H C Gmbh Metodo para revestir una superficie de sustrato y producto revestido.
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US20080190483A1 (en) * 2007-02-13 2008-08-14 Carpenter R Douglas Composition and method of preparing nanoscale thin film photovoltaic materials
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US20080300918A1 (en) * 2007-05-29 2008-12-04 Commercenet Consortium, Inc. System and method for facilitating hospital scheduling and support
US8071179B2 (en) * 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US7919400B2 (en) * 2007-07-10 2011-04-05 Stion Corporation Methods for doping nanostructured materials and nanostructured thin films
US8601973B2 (en) * 2007-09-01 2013-12-10 Nanosolar, Inc. Solution deposition assembly
US8614396B2 (en) * 2007-09-28 2013-12-24 Stion Corporation Method and material for purifying iron disilicide for photovoltaic application
US8058092B2 (en) 2007-09-28 2011-11-15 Stion Corporation Method and material for processing iron disilicide for photovoltaic application
US8759671B2 (en) * 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US20090087939A1 (en) * 2007-09-28 2009-04-02 Stion Corporation Column structure thin film material using metal oxide bearing semiconductor material for solar cell devices
US20100300352A1 (en) * 2007-10-17 2010-12-02 Yann Roussillon Solution deposition assembly
US8187434B1 (en) 2007-11-14 2012-05-29 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using single-chamber configuration
FR2924863B1 (fr) * 2007-12-07 2017-06-16 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere.
US8440903B1 (en) 2008-02-21 2013-05-14 Stion Corporation Method and structure for forming module using a powder coating and thermal treatment process
US8075723B1 (en) 2008-03-03 2011-12-13 Stion Corporation Laser separation method for manufacture of unit cells for thin film photovoltaic materials
US8772078B1 (en) 2008-03-03 2014-07-08 Stion Corporation Method and system for laser separation for exclusion region of multi-junction photovoltaic materials
US8092667B2 (en) * 2008-06-20 2012-01-10 Solopower, Inc. Electroplating method for depositing continuous thin layers of indium or gallium rich materials
US7939454B1 (en) 2008-05-31 2011-05-10 Stion Corporation Module and lamination process for multijunction cells
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US9087943B2 (en) * 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US8207008B1 (en) 2008-08-01 2012-06-26 Stion Corporation Affixing method and solar decal device using a thin film photovoltaic
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US7855089B2 (en) * 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US8008198B1 (en) * 2008-09-30 2011-08-30 Stion Corporation Large scale method and furnace system for selenization of thin film photovoltaic materials
US8383450B2 (en) * 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US7947524B2 (en) * 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US7863074B2 (en) * 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US7910399B1 (en) * 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US8741689B2 (en) * 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) * 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
USD625695S1 (en) 2008-10-14 2010-10-19 Stion Corporation Patterned thin film photovoltaic module
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8344243B2 (en) * 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
US7897020B2 (en) * 2009-04-13 2011-03-01 Miasole Method for alkali doping of thin film photovoltaic materials
US8241943B1 (en) 2009-05-08 2012-08-14 Stion Corporation Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
DE102009050987B3 (de) * 2009-05-12 2010-10-07 Schott Ag Dünnschichtsolarzelle und Verfahren zur Herstellung einer Dünnschichtsolarzelle
US8497152B2 (en) * 2009-05-12 2013-07-30 Solopower, Inc. Roll-to-roll processing method and tools for electroless deposition of thin layers
US8372684B1 (en) 2009-05-14 2013-02-12 Stion Corporation Method and system for selenization in fabricating CIGS/CIS solar cells
US20100310770A1 (en) * 2009-06-05 2010-12-09 Baosheng Sang Process for synthesizing a thin film or composition layer via non-contact pressure containment
WO2010144460A1 (en) 2009-06-08 2010-12-16 University Of Toledo Flexible photovoltaic cells having a polyimide material layer and method of producing same
USD662040S1 (en) 2009-06-12 2012-06-19 Stion Corporation Pin striped thin film solar module for garden lamp
USD628332S1 (en) 2009-06-12 2010-11-30 Stion Corporation Pin striped thin film solar module for street lamp
USD632415S1 (en) 2009-06-13 2011-02-08 Stion Corporation Pin striped thin film solar module for cluster lamp
USD652262S1 (en) 2009-06-23 2012-01-17 Stion Corporation Pin striped thin film solar module for cooler
USD662041S1 (en) 2009-06-23 2012-06-19 Stion Corporation Pin striped thin film solar module for laptop personal computer
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
USD627696S1 (en) 2009-07-01 2010-11-23 Stion Corporation Pin striped thin film solar module for recreational vehicle
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
KR101172132B1 (ko) * 2009-09-30 2012-08-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
MX2012010732A (es) 2010-03-17 2013-04-03 Dow Global Technologies Llc Estructuras de película delgada basadas en calcógeno fotoelectrónicamente activo que incorporan los estratos.
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US8142521B2 (en) * 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
BR112012029813A2 (pt) 2010-05-26 2017-03-07 Univ Toledo estrutura de célula fotovoltaica, método para fazer uma camada de interface de dispersão de luz para uma célula fotovoltaica e estrutura de célula fotovoltaica (pv) tendo uma camada de interface de dispersão
US9461186B2 (en) 2010-07-15 2016-10-04 First Solar, Inc. Back contact for a photovoltaic module
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
US20120031492A1 (en) * 2010-08-04 2012-02-09 Miasole Gallium-Containing Transition Metal Thin Film for CIGS Nucleation
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8563354B1 (en) 2010-10-05 2013-10-22 University Of South Florida Advanced 2-step, solid source deposition approach to the manufacture of CIGS solar modules
US9169548B1 (en) 2010-10-19 2015-10-27 Apollo Precision Fujian Limited Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof
US7935558B1 (en) 2010-10-19 2011-05-03 Miasole Sodium salt containing CIG targets, methods of making and methods of use thereof
US8048707B1 (en) 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof
US8975615B2 (en) * 2010-11-09 2015-03-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US8998606B2 (en) 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
US8642884B2 (en) * 2011-09-09 2014-02-04 International Business Machines Corporation Heat treatment process and photovoltaic device based on said process
US8734896B2 (en) 2011-09-29 2014-05-27 H.C. Starck Inc. Methods of manufacturing high-strength large-area sputtering targets
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9935211B2 (en) 2012-04-25 2018-04-03 Guardian Glass, LLC Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells
US8809674B2 (en) * 2012-04-25 2014-08-19 Guardian Industries Corp. Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
US9246025B2 (en) 2012-04-25 2016-01-26 Guardian Industries Corp. Back contact for photovoltaic devices such as copper-indium-diselenide solar cells
US9419151B2 (en) * 2012-04-25 2016-08-16 Guardian Industries Corp. High-reflectivity back contact for photovoltaic devices such as copper—indium-diselenide solar cells
US20140069499A1 (en) * 2012-08-31 2014-03-13 The Regents Of The University Of California MORPHOLOGICAL AND SPATIAL CONTROL OF InP CRYSTAL GROWTH USING CLOSED-SPACED SUBLIMATION
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4465575A (en) * 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
US4611091A (en) * 1984-12-06 1986-09-09 Atlantic Richfield Company CuInSe2 thin film solar cell with thin CdS and transparent window layer
US4798660A (en) * 1985-07-16 1989-01-17 Atlantic Richfield Company Method for forming Cu In Se2 films
US4703131A (en) * 1985-11-18 1987-10-27 The Boeing Company CdS/CuInSe2 solar cells with titanium foil substrate
US4818357A (en) * 1987-05-06 1989-04-04 Brown University Research Foundation Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same

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EP0360403A3 (en) 1990-11-28
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EP0360403A2 (de) 1990-03-28
US4915745A (en) 1990-04-10
DE68919399D1 (de) 1994-12-22
US4915745B1 (de) 1992-04-07
JP2754248B2 (ja) 1998-05-20

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