JP2006186200A - プリカーサ膜及びその製膜方法 - Google Patents
プリカーサ膜及びその製膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 84
- 239000002243 precursor Substances 0.000 title claims abstract description 79
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 139
- 230000031700 light absorption Effects 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 238000010549 co-Evaporation Methods 0.000 claims abstract description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 39
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000004070 electrodeposition Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000012691 Cu precursor Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 99
- 239000011669 selenium Substances 0.000 description 10
- 229910052711 selenium Inorganic materials 0.000 description 6
- 229910000807 Ga alloy Inorganic materials 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Abstract
【解決手段】 CIS系薄膜太陽電池の光吸収層、その他で使用するプリカーサ膜又はその製膜方法であり、Ga成分比(Ga/(Ga+Cu))の高いX重量%GaのCu−Ga合金層からなるプリカーサ膜をターゲットとして、スパッタリングにより第1層であるX重量%GaのCu−Ga層を製膜(製膜工程A)した後、前記第1層上にCu層をターゲットとして、スパッタリングにより第2層であるCu層を製膜(製膜工程B)し、前記第1層と第2層の合計により、要求されるGa成分比がY(X>Y)重量%Gaのプリカーサ膜を形成する。同時蒸着法による製膜法も可能。
【選択図】 図1
Description
また、同時蒸着法の場合でも、Cu、Ga、In等複数の金属を同時に蒸着する場合は、制御が複雑になるため同様に効率が比較的低く、蒸着の膜厚精度も高くないため、高品質なプリカーサ膜ができないという問題からコスト高の原因ともなっていた。
Ga成分比(Ga/(Ga+Cu))の高いX重量%GaのGa−Cu合金層からなるプリカーサ膜をターゲットとして用いて、スパッタリング法により第1層であるX重量%GaのGa−Cu層を製膜(第1製膜工程)した後、前記第1層上にCu層をターゲットとして用いて、スパッタリング法により第2層であるCu層を製膜(第2製膜工程)し、前記第1層と第2層の合計により、要求されるGa成分比がY(X>Y)重量%Gaのプリカーサ膜を形成するプリカーサ膜の製膜方法である。
Ga成分比(Ga/(Ga+Cu))の高いX重量%GaのGa−Cu合金を同時蒸着法、有機金属化学的気相成長法、スクリーン印刷法、電析法の何れか一つの方法により製膜したプリカーサ膜と追加量のCu層を前記プリカーサ膜の製膜と同じ製膜方法により製膜することで、要求されるGa成分比が低いY(X>Y)重量%GaのGa−Cu合金プリカーサ膜を形成するプリカーサ膜の製膜方法である。
Cuのターゲットは、スパッター特性が良く、パワー電力とスパッター製膜量との相関が高く制御を容易にすることができる。同時蒸着法では、多元素を同時に蒸着させるより、Cu、Ga等金属種を最大2元素までで制御することにより、膜厚の制御性を高くすることができる。
図1に示すように、Ga成分比(Ga/(Ga+Cu))の高いX重量%GaのGa−Cu合金層からなるプリカーサ膜をターゲット(第1層用ターゲット)として用いて、スパッタリング法により第1層であるX重量%GaのGa−Cu層を製膜(製膜工程A)した後、Cuをターゲット(第2層用ターゲット)として用いて、スパッタリング法により前記第1層上に第2層である追加量のCu層を製膜(製膜工程B)し、前記第1層と第2層の合計により、要求されるGa成分比が低いY(X>Y)重量%GaのGa−Cu合金を形成するプリカーサ膜が製膜される。以上のように、従来のプリカーサ膜の製膜方法(図4参照)と比べて製膜工程が一工程増すものの、これは高品質で、安価なCu層を製膜する工程であり、このような高品質で、安価で且つ簡単な製膜工程を追加することにより、要求するGa成分比(濃度)のプリカーサ膜を製膜することができる。
1B プリカーサ膜(従来の製膜方法)
2 プリカーサ膜(プリカーサ膜1上にInを製膜)
3 CIS系薄膜太陽電池3
3A ガラス基板
3B 金属裏面電極層
3C CIS系光吸収層
3D 高抵抗バッファ層
3E 窓層(透明導電膜)
Claims (5)
- 要求されるGa成分比がY(X>Y)重量%Gaのプリカーサ膜の製膜方法であって、
Ga成分比(Ga/(Ga+Cu))の高いX重量%GaのGa−Cu合金層からなるプリカーサ膜をターゲットとして用いて、スパッタリング法により第1層であるX重量%GaのGa−Cu層を製膜(第1製膜工程)した後、前記第1層上にCu層をターゲットとして用いて、スパッタリング法により第2層であるCu層を製膜(第2製膜工程)し、前記第1層と第2層の合計により、要求されるGa成分比がY(X>Y)重量%Gaのプリカーサ膜を形成することを特徴とするプリカーサ膜の製膜方法。 - 要求されるGa成分比がY(X>Y)重量%Gaのプリカーサ膜の製膜方法であって、
Ga成分比(Ga/(Ga+Cu))の高いX重量%GaのGa−Cu合金を同時蒸着法、有機金属化学的気相成長法、スクリーン印刷法、電析法の何れか一つの方法により製膜したプリカーサ膜と追加量のCu層を前記プリカーサ膜の製膜と同じ製膜方法により製膜することで、要求されるGa成分比が低いY(X>Y)重量%GaのGa−Cu合金プリカーサ膜を形成することを特徴とするプリカーサ膜の製膜方法。 - 前記プリカーサ膜は、ガラス基板、金属裏面電極層、Cu及びGaを含有するCuInSe2 、高抵抗バッファ層、n形窓層の順に積層されたサブストレート構造のpnヘテロ接合デバイスであるCIS系薄膜太陽電池の光吸収層の製膜工程で使用することを特徴とする請求項1又は2に記載のプリカーサ膜の製膜方法。
- 第1層であるGa成分比(Ga/(Ga+Cu))の高いX重量%GaのGa−Cu合金層と前記第1層上に形成された第2層である追加量のCuからなるCu層とからなり、前記第1層と前記第2層Cu層との合計により、要求されるGa成分比が低いY(X>Y)重量%GaのGa−Cuプリカーサ膜を形成することを特徴とするプリカーサ膜。
- 前記プリカーサ膜は、ガラス基板、金属裏面電極層、Cu及びGaを含有するp形CIS系光吸収層、高抵抗バッファ層、n形窓層の順に積層されたサブストレート構造のpnヘテロ接合デバイスであるCIS系薄膜太陽電池の光吸収層の製膜工程で使用することを特徴とする請求項5に記載のプリカーサ膜。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004379933A JP2006186200A (ja) | 2004-12-28 | 2004-12-28 | プリカーサ膜及びその製膜方法 |
KR1020077014645A KR20070099575A (ko) | 2004-12-28 | 2005-12-27 | 전구체 막 및 이의 제막방법 |
US11/722,853 US20070283998A1 (en) | 2004-12-28 | 2005-12-27 | Precursor Film And Method Of Forming The Same |
CNA2005800452987A CN101095242A (zh) | 2004-12-28 | 2005-12-27 | 前驱膜及其形成方法 |
PCT/JP2005/023893 WO2006070800A1 (ja) | 2004-12-28 | 2005-12-27 | プリカーサ膜及びその製膜方法 |
EP05822368A EP1845563A4 (en) | 2004-12-28 | 2005-12-27 | PRECURSOR FILM AND METHOD FOR MANUFACTURING THE SAME |
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JP2004379933A JP2006186200A (ja) | 2004-12-28 | 2004-12-28 | プリカーサ膜及びその製膜方法 |
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JP2006186200A true JP2006186200A (ja) | 2006-07-13 |
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JP2004379933A Pending JP2006186200A (ja) | 2004-12-28 | 2004-12-28 | プリカーサ膜及びその製膜方法 |
Country Status (6)
Country | Link |
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US (1) | US20070283998A1 (ja) |
EP (1) | EP1845563A4 (ja) |
JP (1) | JP2006186200A (ja) |
KR (1) | KR20070099575A (ja) |
CN (1) | CN101095242A (ja) |
WO (1) | WO2006070800A1 (ja) |
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2004
- 2004-12-28 JP JP2004379933A patent/JP2006186200A/ja active Pending
-
2005
- 2005-12-27 EP EP05822368A patent/EP1845563A4/en not_active Withdrawn
- 2005-12-27 US US11/722,853 patent/US20070283998A1/en not_active Abandoned
- 2005-12-27 CN CNA2005800452987A patent/CN101095242A/zh active Pending
- 2005-12-27 KR KR1020077014645A patent/KR20070099575A/ko not_active Application Discontinuation
- 2005-12-27 WO PCT/JP2005/023893 patent/WO2006070800A1/ja active Application Filing
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WO2009142316A1 (ja) * | 2008-05-20 | 2009-11-26 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の製造方法 |
JP2009283560A (ja) * | 2008-05-20 | 2009-12-03 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池の製造方法 |
JP4540724B2 (ja) * | 2008-05-20 | 2010-09-08 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の製造方法 |
WO2011052616A1 (ja) * | 2009-10-27 | 2011-05-05 | 京セラ株式会社 | カルコゲン化合物半導体層の製造方法および光電変換装置の製造方法 |
JP5174248B2 (ja) * | 2009-10-27 | 2013-04-03 | 京セラ株式会社 | カルコゲン化合物半導体層の製造方法および光電変換装置の製造方法 |
CN102034898A (zh) * | 2010-10-20 | 2011-04-27 | 山东建筑大学 | 一种太阳电池用铜铟硫光电薄膜材料的制备方法 |
Also Published As
Publication number | Publication date |
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WO2006070800A1 (ja) | 2006-07-06 |
CN101095242A (zh) | 2007-12-26 |
US20070283998A1 (en) | 2007-12-13 |
EP1845563A1 (en) | 2007-10-17 |
KR20070099575A (ko) | 2007-10-09 |
EP1845563A4 (en) | 2013-03-20 |
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