CN101095242A - 前驱膜及其形成方法 - Google Patents
前驱膜及其形成方法 Download PDFInfo
- Publication number
- CN101095242A CN101095242A CNA2005800452987A CN200580045298A CN101095242A CN 101095242 A CN101095242 A CN 101095242A CN A2005800452987 A CNA2005800452987 A CN A2005800452987A CN 200580045298 A CN200580045298 A CN 200580045298A CN 101095242 A CN101095242 A CN 101095242A
- Authority
- CN
- China
- Prior art keywords
- layer
- precursor film
- film
- component ratio
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002243 precursor Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000010408 film Substances 0.000 claims abstract description 117
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 110
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 229910000807 Ga alloy Inorganic materials 0.000 claims abstract description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 68
- 239000010949 copper Substances 0.000 claims description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000011669 selenium Substances 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- 239000005864 Sulphur Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Abstract
在低成本下容易地形成具有需要的镓成分比例的前驱膜。本发明提供用于形成CIS型薄膜太阳能电池等的光吸收层的前驱膜，或形成所述膜的方法。通过利用包含具有镓成分比例为X wt％Ga的Cu－Ga合金层的前驱膜作为靶进行溅射而形成作为第一层的具有高的镓成分比例(Ga/(Ga+Cu))为X wt％Ga的Cu－Ga层(沉积步骤A)。之后，通过利用铜层作为靶进行溅射而形成作为在所述第一层上的第二层的铜层(沉积步骤B)，由此形成按所述第一层和第二层合计具有需要的镓成分比例为Y wt％Ga(X＞Y)的前驱膜。通过同时进行汽相淀积形成膜的方法也是可以的。
Description
技术领域
本发明涉及用于形成CIS型薄膜太阳能电池的光吸收层的步骤中的前驱膜，并涉及形成所述前驱膜的方法。
背景技术
在CIS型薄膜太阳能电池的光吸收膜中，那些包含其成分中的铜和镓的CIS型薄膜太阳能电池的吸收层，例如CIGS和CIGSSe，已经通过利用由合金制成的靶进行溅射而形成(前驱膜)，所述合金对应于在各自光吸收层中的镓成分比例(参见，例如，专利文献1)。除了溅射，形成膜的技术还包括多源共蒸发、有机金属化学汽相淀积、丝网印刷、电沉积，等。在溅射的情况下，为了形成其中镓对铜和镓的比例(Ga/(Ga+Cu))为25wt％(下文中称为25wt％Ga)的膜，包含25wt％Ga的Cu-Ga合金(前驱膜)已经用作如图5所示的靶。
在形成膜的技术中，溅射是形成膜的一种方法，其中使用具有不同镓比例的靶(参见，例如专利文献2)。为了形成其中镓对铜和镓的比例(Ga/(Ga+Cu))为25wt％的Cu-Ga合金的膜，已经使用包含具有镓比例为20wt％的Cu-Ga合金层和具有镓比例为30wt％的Cu-Ga合金层的前驱膜作为靶。
专利文献1：JP-A-10-135498(日本专利3249407)
专利文献2：JP-A-10-135495
因此，每次在光吸收层中的镓成分比例是变化的，必须向供货商定购适合于所需要的镓成分比例的Cu-Ga合金靶。包含镓的合金具有相对低的溅射效率并且不会获得高的精确性。因此镓合金的问题在于获得不了高品质的前驱膜，并且这已经导致成本增加。(存在的问题是增加的成本的结果。)尤其当使用在镓比例上不同的两个或更多个靶的时候，这个问题是显著的。
在多源共蒸发的情况下，如铜、镓和铟的金属的多源共蒸发的情况下，必然导致复杂的控制。因此这项技术在汽相淀积中具有相对低的效率并且不会获得高的膜厚精度。即，存在的问题是不能获得高品质的前驱膜，并且这已经导致成本增加。
发明内容
本发明要解决的技术问题
本发明的目的是消除如上所述的问题，所述目的为通过简单的方法有效地形成具有需要的给定的镓比例的Cu-Ga合金的膜，其中精确度高，成本低。
解决问题的手段
(1)用于消除如上所述问题的本发明提供形成需要具有镓成分比例为Ywt％Ga(X＞Y)的前驱膜的方法，该方法包括：
通过利用包含具有镓成分比例为Xwt％Ga的Cu-Ga合金层的前驱膜作为靶进行溅射而形成作为第一层的具有高的镓成分比例(Ga/(Ga+Cu))为Xwt％Ga的Cu-Ga层(第一沉积步骤)，和之后通过利用铜层作为靶进行溅射而形成作为在所述第一层上的第二层的铜层(沉积步骤B)，从而形成按所述第一层和第二层合计具有需要的镓成分比例为Ywt％Ga(X＞Y)的前驱膜。
(2)本发明提供形成需要具有镓成分比例为Ywt％Ga(X＞Y)的前驱膜的方法，该方法包括
通过选自多源共蒸发、有机金属化学汽相淀积、丝网印刷和电沉积中任一项技术将具有高的镓成分比例(Ga/(Ga+Cu))为Xwt％Ga的Cu-Ga合金沉积而形成前驱膜，和通过与关于所述前驱膜相同的沉积技术以增加的量形成铜层，从而形成具有所需的低的镓成分比例为Ywt％Ga(X＞Y)的Cu-Ga合金前驱膜。
(3)本发明提供在上面(1)或(2)下所述的形成前驱膜的方法，其中所述的前驱膜用于形成CIS型薄膜太阳能电池的光吸收层的步骤中，其中所述CIS型薄膜太阳能电池为具有基板结构的pn异质结器件，其包括按照如下顺序叠置的玻璃基板、金属背衬电极层、包含铜和镓的CuInSe2、高阻缓冲层和n型窗口层。
(4)本发明提供包含作为第一层的Cu-Ga合金层和作为在所述第一层上形成的第二层的铜层的前驱膜，所述Cu-Ga合金层具有高的镓成分比例(Ga/(Ga+Cu))为Xwt％Ga，所述铜层由增加量的铜组成，其中所述前驱膜为按所述第一层和作为所述第二层的铜层合计具有需要的低的镓成分比例为Ywt％Ga(X＞Y)的Cu-Ga前驱膜。
(5)本发明提供如上面(4)下所述的前驱膜，其用于形成CIS型薄膜太阳能电池的光吸收层的步骤中，其中所述CIS型薄膜太阳能电池为pn异质结器件，其具有包括按照如下顺序叠置的玻璃基板、金属背衬电极层、包含铜和镓的p型CIS基光吸收层、高阻缓冲层和n型窗口层的基板结构。
有益效果
在本发明中，通过选自例如溅射、多源共蒸发、有机金属化学汽相淀积、丝网印刷和电沉积的沉积技术中的任一项形成膜的技术，将包含具有高的镓成分比例(Ga/(Ga+Cu))为Xwt％Ga的Cu-Ga合金层的前驱膜用于形成作为第一层的具有所述镓成分比例为Xwt％Ga的Cu-Ga层(沉积步骤A)。之后，通过与关于所述第一层相同的沉积技术以增加的量形成作为在所述第一层上的第二层的铜层(沉积步骤2)，从而形成按所述第一层和第二层合计具有需要的低的镓成分比例为Ywt％Ga(X＞Y)的Cu-Ga合金前驱膜。即，具有需要的镓成分比例(浓度)的前驱膜通过增加少量的沉积步骤通过已有的样品沉积技术形成。因此，可降低制备光吸收层和薄膜太阳能电池的成本。
所述铜靶具有令人满意的溅射特性，并具有能量和溅射沉积物的量之间高的相关性。使用这种靶可使控制方便。在多源共蒸发中，调节所述沉积为同时沉积最高两种金属元素，例如铜和镓，而不是同时沉积多种元素。因此，可以高程度地进行膜厚控制。
附图说明
图1为显示本发明的方法的图，所述方法包括形成作为第一层的具有(高的)镓比例为Xwt％Ga的Cu-Ga层(沉积步骤A)和形成作为第二层的铜层(沉积步骤B)，从而形成具有(给定的)镓比例为Ywt％Ga的Cu-Ga前驱膜1。
图2说明由通过本发明的膜形成方法形成的前驱膜1(将具有(高的)镓比例wt％Ga的Cu-Ga层和所述铜层合计，具有镓比例为25wt％Ga的Cu-Ga层)制备的薄膜太阳能电池的太阳能电池性能。
图3说明由通过相关现有技术的膜形成方法形成的前驱膜1B(具有镓比例为25wt％Ga的Cu-Ga层)制备的薄膜太阳能电池的太阳能电池性能。
图4为说明铟层在通过示于图1中的膜形成方法形成的前驱膜1上形成(沉积步骤C)以形成前驱膜2的方法的图。
图5为说明相关现有技术的形成前驱膜1的方法(其中将具有(给定的)镓比例为Ywt％Ga的Cu-Ga前驱膜用作靶以通过溅射形成具有(给定的)镓比例为Ywt％的Cu-Ga层的方法)的图。
图6为显示CIS型薄膜太阳能电池的基本构造(截面图)的图。
附图标记说明
1 前驱膜(本发明的膜形成方法)
1B 前驱膜(相关现有技术的膜形成方法)
2 前驱膜(前驱膜1和在其上形成的铟膜)
3 CIS型薄膜太阳能电池
3A 玻璃基板
3B 金属背衬电极层
3C CIS基光吸收层
3D 高阻缓冲层
3E 窗口层(透明导电膜)
具体实施方式
本发明涉及形成Cu-Ga前驱膜的方法，其中所述的Cu-Ga前驱膜用于形成CIS型薄膜太阳能电池的光吸收层，例如CIGS或CIGSSe，所述薄膜太阳能电池包含其成分中的铜、铟、镓、硫和硒。本发明提供用于形成CIS型薄膜太阳能电池的光吸收层的步骤中的前驱膜，其中所述CIS型薄膜太阳能电池为pn异质结器件，其具有包括已经按照如下顺序叠置的玻璃基板、金属背衬电极层、CIS基光吸收层、高阻缓冲层和n型窗口层的如图6所示的基板结构。本发明还提供形成所述膜的方法。
所述CIS基光吸收层包括，例如，p型CGS、CGSSe、CIGS或CIGSSe，它们各自包含铜和镓。所述CIGS、CIGSSe，等包含其成分中的铜、铟、镓、硫和硒。
本发明的方法用于通过溅射而形成前驱膜，该方法如下所述。
如图1所示，将包含具有高的镓成分比例(Ga/(Ga+Cu))为Xwt％Ga的Cu-Ga合金层的前驱膜用作靶(用于形成第一层的靶)通过溅射形成作为第一层的具有所述镓成分比例为Xwt％Ga的Cu-Ga层(沉积步骤A)。之后，将铜用作靶(用于形成第二层的靶)通过溅射以附加的量形成作为在所述第一层上的第二层的铜层(沉积步骤B)。因此，形成前驱膜，其按所述第一层和第二层合计，形成具有需要的低的镓成分比例为Ywt％Ga(X＞Y)的Cu-Ga合金。尽管在上述方法中的沉积步骤数比在相关现有技术中的形成前驱膜的方法多一步(参见图4)，但增加的步骤是为了形成高品质的廉价的铜层。由于增加了这样一个简单的用于形成高品质廉价铜层的步骤，可形成具有需要的镓成分比例(浓度)的前驱膜。
例如，在形成包含具有镓成分比例为20wt％Ga的Cu-Ga合金层的前驱膜的情况下，将具有高的镓成分比例为30wt％Ga的Cu-Ga合金层用作用于形成第一层的靶以形成第一层，和将铜(具有镓成分比例为0wt％Ga的Cu-Ga合金)层用作用于形成第二层的靶以形成第二层。为了使所述第一层和第二层合计可以是包含具有所需的镓成分比例为20wt％Ga的Cu-Ga合金的前驱膜，必须调节待通过溅射而沉积的所述第一层和/或第二层的厚度或其量。
在由通过包括沉积步骤A和沉积步骤B的本发明的形成膜的方法形成的前驱膜(需要具有镓比例为25wt％Ga)制备的光吸收层中的镓浓度(Ga/(Ga+Cu))和在由仅包含沉积步骤的相关现有技术的形成膜的方法形成的前驱膜(需要具有镓比例为25wt％Ga)制备的光吸收层中的镓浓度(Ga/(Ga+Cu))通过元素分析由IPC(电感耦合等离子体发射光谱学)法测定。其结果示于下表1中。
表1
通过IPC(电感耦合等离子体发射光谱学)的元素分析结果
| 元素名称 | Cu | Ga | Ga/(Ga+Cu) |
| 由通过本发明的膜形成方法形成的前驱膜制备的光吸收层 | 6.698722 | 2.239713 | 0.251 |
| 由通过相关现有技术的膜形成方法形成的前驱膜制备的光吸收层 | 6.232514 | 2.053854 | 0.248 |
如表1所示，在通过本发明的膜形成方法形成的前驱膜中实质上的镓成分比例(Ga/(Ga+Cu))为0.251，然而在通过相关现有技术的膜形成方法形成的前驱膜中的镓成分比例(Ga/(Ga+Cu))为0.248。这说明通过本发明的膜形成方法形成了具有需要的镓成分比例的前驱膜。
如从由本发明的膜形成方法形成的前驱膜(参见图1)制备的CIS型薄膜太阳能电池的太阳能电池性能(参见图2)和由相关现有技术的膜形成方法形成的前驱膜(参见图5)制备的CIS型薄膜太阳能电池的太阳能电池性能(参见图3)之间的比较可显而易见的，通过试验数据说明：示于图2中的由本发明的膜形成方法形成的前驱膜制备的CIS型薄膜太阳能电池的太阳能电池性能，与示于图3中的由通过现有技术的膜形成方法形成的前驱膜制备的CIS型薄膜太阳能电池的太阳能电池性能几乎相同。
如图4所示，将铟用作靶以在由本发明的膜形成方法形成的前驱膜1上通过溅射形成铟层(沉积步骤C)。由此形成的前驱膜2由包含具有高的镓成分比例为Xwt％Ga的Cu-Ga合金层和铜层的前驱膜，和在其上形成的铟层组成。
将通过本发明的膜形成方法形成的前驱膜1(图1)或所述前驱膜2(图4)加热，同时将硒源保持在如下状态：其被封装在所述装置中以使多层结构的所述金属前驱膜经历与热解的硒的硒化反应(硒化作用)。因此，形成了基于硒化物的CIS薄膜光吸收层，例如，Cu-Ga-Se(CGSe)光吸收层或Cu-In-Ga-Se(CIGSe)光吸收层。
另外，通过如下步骤处理包含Cu-Ga-Se(CGSe)或Cu-In-Ga-Se(CIGSe)的光吸收层：用真空泵等排出在所述装置中的硒气氛，之后将硫源引入到所述装置中以用硫气氛置换所述硒气氛，以及升高所述装置中的温度和同时将所述基于硒化物的CIS基光吸收层经历与热解的硫的硫化反应(硫化作用)。从而形成了Cu-Ga-Se-S(CGSSe)光吸收层或Cu-In-Ga-Se-S(CIGSSe)光吸收层，其为由硫化/硒化材料制成的CIS基光吸收层。
上述的本发明的膜形成方法为通过溅射形成膜的方法。然而，可采用任何一种沉积技术的膜形成方法，如多源共蒸发、金属有机化学汽相淀积、丝网印刷和电沉积，用于形成具有需要的镓浓度的前驱膜。
Claims (5)
1.一种形成需要具有镓成分比例为Y wt％Ga(X＞Y)的前驱膜的方法，其包括：
通过利用包含具有镓成分比例为X wt％Ga的Cu-Ga合金层的前驱膜作为靶进行溅射而形成作为第一层的具有高的镓成分比例(Ga/(Ga+Cu))为X wt％Ga的Cu-Ga层(第一沉积步骤)，和之后通过利用铜层作为靶进行溅射而形成作为在所述第一层上的第二层的铜层(沉积步骤B)，从而形成按所述第一层和第二层合计具有需要的镓成分比例Y wt％Ga(X＞Y)的前驱膜。
2.一种形成需要具有镓成分比例为Y wt％Ga(X＞Y)的前驱膜的方法，其包括：
通过选自同时蒸镀、有机金属化学汽相外延、丝网印刷和电沉积中的任一项技术将具有高的镓成分比例(Ga/(Ga+Cu))为X wt％Ga的Cu-Ga合金沉积而形成前驱膜，和通过与关于所述前驱膜相同的沉积技术以附加的量形成铜层，从而形成具有所需的低的镓成分比例Ywt％Ga(X＞Y)的Cu-Ga合金前驱膜。
3.根据权利要求1或2的形成前驱膜的方法，其中所述的前驱膜用于形成CIS型薄膜太阳能电池的光吸收层的步骤中，其中所述CIS型薄膜太阳能电池为具有基板结构的pn异质结器件，其包括按照如下顺序叠置的玻璃基板、金属背衬电极层、包含铜和镓的CuInSe2、高阻缓冲层和n型窗口层。
4.一种包含作为第一层的Cu-Ga合金层和作为在所述第一层上形成的第二层的铜层的前驱膜，所述Cu-Ga合金层具有高的镓成分比例(Ga/(Ga+Cu))X wt％Ga，所述铜层由附加量的铜组成，其中所述前驱膜为按所述第一层和作为所述第二层的铜层合计具有需要的低的镓成分比例Y wt％Ga(X＞Y)的Cu-Ga前驱膜。
5.根据权利要求4的前驱膜，其中所述的前驱膜用于形成CIS型薄膜太阳能电池的光吸收层的步骤中，其中所述CIS型薄膜太阳能电池为具有基板结构的pn异质结器件，其包括按照如下顺序叠置的玻璃基板、金属背衬电极层、包含铜和镓的p型CIS基光吸收层、高阻缓冲层和n型窗口层。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP379933/2004 | 2004-12-28 | ||
| JP2004379933A JP2006186200A (ja) | 2004-12-28 | 2004-12-28 | プリカーサ膜及びその製膜方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101095242A true CN101095242A (zh) | 2007-12-26 |
Family
ID=36614912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800452987A Pending CN101095242A (zh) | 2004-12-28 | 2005-12-27 | 前驱膜及其形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20070283998A1 (zh) |
| EP (1) | EP1845563A4 (zh) |
| JP (1) | JP2006186200A (zh) |
| KR (1) | KR20070099575A (zh) |
| CN (1) | CN101095242A (zh) |
| WO (1) | WO2006070800A1 (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800260A (zh) * | 2009-02-10 | 2010-08-11 | 胡倾宇 | 一种太阳能电池用薄膜材料的制造方法 |
| TWI583811B (zh) * | 2010-01-07 | 2017-05-21 | Jx Nippon Mining & Metals Corp | A Cu-Ga sputtering target, a method for manufacturing the target, a light absorbing layer, and a solar cell using the light absorbing layer |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9105776B2 (en) | 2006-05-15 | 2015-08-11 | Stion Corporation | Method and structure for thin film photovoltaic materials using semiconductor materials |
| US8017860B2 (en) * | 2006-05-15 | 2011-09-13 | Stion Corporation | Method and structure for thin film photovoltaic materials using bulk semiconductor materials |
| WO2008120307A1 (ja) * | 2007-03-28 | 2008-10-09 | Showa Shell Sekiyu K.K. | Ｃｉｓ系薄膜太陽電池サブモジュールの製造システム |
| US8071179B2 (en) * | 2007-06-29 | 2011-12-06 | Stion Corporation | Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials |
| US7919400B2 (en) * | 2007-07-10 | 2011-04-05 | Stion Corporation | Methods for doping nanostructured materials and nanostructured thin films |
| US20090087939A1 (en) * | 2007-09-28 | 2009-04-02 | Stion Corporation | Column structure thin film material using metal oxide bearing semiconductor material for solar cell devices |
| US8058092B2 (en) | 2007-09-28 | 2011-11-15 | Stion Corporation | Method and material for processing iron disilicide for photovoltaic application |
| US8759671B2 (en) | 2007-09-28 | 2014-06-24 | Stion Corporation | Thin film metal oxide bearing semiconductor material for single junction solar cell devices |
| US8614396B2 (en) | 2007-09-28 | 2013-12-24 | Stion Corporation | Method and material for purifying iron disilicide for photovoltaic application |
| US8287942B1 (en) | 2007-09-28 | 2012-10-16 | Stion Corporation | Method for manufacture of semiconductor bearing thin film material |
| US7998762B1 (en) | 2007-11-14 | 2011-08-16 | Stion Corporation | Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration |
| JP4540724B2 (ja) * | 2008-05-20 | 2010-09-08 | 昭和シェル石油株式会社 | Ｃｉｓ系薄膜太陽電池の製造方法 |
| US8642138B2 (en) | 2008-06-11 | 2014-02-04 | Stion Corporation | Processing method for cleaning sulfur entities of contact regions |
| US9087943B2 (en) | 2008-06-25 | 2015-07-21 | Stion Corporation | High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material |
| US8003432B2 (en) | 2008-06-25 | 2011-08-23 | Stion Corporation | Consumable adhesive layer for thin film photovoltaic material |
| US7855089B2 (en) | 2008-09-10 | 2010-12-21 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
| US8026122B1 (en) | 2008-09-29 | 2011-09-27 | Stion Corporation | Metal species surface treatment of thin film photovoltaic cell and manufacturing method |
| US8008112B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method |
| US8236597B1 (en) | 2008-09-29 | 2012-08-07 | Stion Corporation | Bulk metal species treatment of thin film photovoltaic cell and manufacturing method |
| US8476104B1 (en) | 2008-09-29 | 2013-07-02 | Stion Corporation | Sodium species surface treatment of thin film photovoltaic cell and manufacturing method |
| US8394662B1 (en) | 2008-09-29 | 2013-03-12 | Stion Corporation | Chloride species surface treatment of thin film photovoltaic cell and manufacturing method |
| US8501521B1 (en) | 2008-09-29 | 2013-08-06 | Stion Corporation | Copper species surface treatment of thin film photovoltaic cell and manufacturing method |
| US8008110B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method |
| US8425739B1 (en) | 2008-09-30 | 2013-04-23 | Stion Corporation | In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials |
| US7863074B2 (en) | 2008-09-30 | 2011-01-04 | Stion Corporation | Patterning electrode materials free from berm structures for thin film photovoltaic cells |
| US7947524B2 (en) | 2008-09-30 | 2011-05-24 | Stion Corporation | Humidity control and method for thin film photovoltaic materials |
| US7910399B1 (en) | 2008-09-30 | 2011-03-22 | Stion Corporation | Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates |
| US8383450B2 (en) | 2008-09-30 | 2013-02-26 | Stion Corporation | Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials |
| US8741689B2 (en) | 2008-10-01 | 2014-06-03 | Stion Corporation | Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials |
| US20110018103A1 (en) | 2008-10-02 | 2011-01-27 | Stion Corporation | System and method for transferring substrates in large scale processing of cigs and/or cis devices |
| US8003430B1 (en) | 2008-10-06 | 2011-08-23 | Stion Corporation | Sulfide species treatment of thin film photovoltaic cell and manufacturing method |
| US8435826B1 (en) | 2008-10-06 | 2013-05-07 | Stion Corporation | Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method |
| USD625695S1 (en) | 2008-10-14 | 2010-10-19 | Stion Corporation | Patterned thin film photovoltaic module |
| US8168463B2 (en) | 2008-10-17 | 2012-05-01 | Stion Corporation | Zinc oxide film method and structure for CIGS cell |
| US8344243B2 (en) | 2008-11-20 | 2013-01-01 | Stion Corporation | Method and structure for thin film photovoltaic cell using similar material junction |
| KR20100073717A (ko) | 2008-12-23 | 2010-07-01 | 삼성전자주식회사 | 태양전지 및 그 제조 방법 |
| WO2010085553A1 (en) | 2009-01-21 | 2010-07-29 | Purdue Research Foundation | Selenization of precursor layer containing culns2 nanoparticles |
| US20120115312A1 (en) * | 2009-05-26 | 2012-05-10 | Purdue Research Foundation | Thin films for photovoltaic cells |
| USD628332S1 (en) | 2009-06-12 | 2010-11-30 | Stion Corporation | Pin striped thin film solar module for street lamp |
| USD662040S1 (en) | 2009-06-12 | 2012-06-19 | Stion Corporation | Pin striped thin film solar module for garden lamp |
| USD632415S1 (en) | 2009-06-13 | 2011-02-08 | Stion Corporation | Pin striped thin film solar module for cluster lamp |
| USD652262S1 (en) | 2009-06-23 | 2012-01-17 | Stion Corporation | Pin striped thin film solar module for cooler |
| USD662041S1 (en) | 2009-06-23 | 2012-06-19 | Stion Corporation | Pin striped thin film solar module for laptop personal computer |
| US8507786B1 (en) | 2009-06-27 | 2013-08-13 | Stion Corporation | Manufacturing method for patterning CIGS/CIS solar cells |
| USD627696S1 (en) | 2009-07-01 | 2010-11-23 | Stion Corporation | Pin striped thin film solar module for recreational vehicle |
| US8398772B1 (en) | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
| KR101072089B1 (ko) * | 2009-09-30 | 2011-10-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| US8809096B1 (en) | 2009-10-22 | 2014-08-19 | Stion Corporation | Bell jar extraction tool method and apparatus for thin film photovoltaic materials |
| WO2011052616A1 (ja) * | 2009-10-27 | 2011-05-05 | 京セラ株式会社 | カルコゲン化合物半導体層の製造方法および光電変換装置の製造方法 |
| KR20110060139A (ko) * | 2009-11-30 | 2011-06-08 | 삼성전자주식회사 | 태양 전지 제조 방법 |
| US8859880B2 (en) | 2010-01-22 | 2014-10-14 | Stion Corporation | Method and structure for tiling industrial thin-film solar devices |
| US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
| KR20110128580A (ko) | 2010-05-24 | 2011-11-30 | 삼성전자주식회사 | 태양 전지 제조 방법 |
| US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
| US8628997B2 (en) | 2010-10-01 | 2014-01-14 | Stion Corporation | Method and device for cadmium-free solar cells |
| KR101075873B1 (ko) * | 2010-10-04 | 2011-10-25 | 한국에너지기술연구원 | 페이스트 또는 잉크를 이용한 구리인듐셀렌계 또는 구리인듐갈륨셀렌계 박막의 제조 방법 |
| CN102034898B (zh) * | 2010-10-20 | 2012-03-28 | 山东建筑大学 | 一种太阳电池用铜铟硫光电薄膜材料的制备方法 |
| US8998606B2 (en) | 2011-01-14 | 2015-04-07 | Stion Corporation | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices |
| US8728200B1 (en) | 2011-01-14 | 2014-05-20 | Stion Corporation | Method and system for recycling processing gas for selenization of thin film photovoltaic materials |
| KR101389832B1 (ko) | 2012-11-09 | 2014-04-30 | 한국과학기술연구원 | 구리인듐셀레늄（ｃｉｇｓ） 또는 구리아연주석황（ｃｚｔｓ）계 박막형 태양전지 및 그의 제조방법 |
| KR101393653B1 (ko) | 2012-11-13 | 2014-05-15 | 지에스칼텍스 주식회사 | Ｃｉｇｓ 광흡수층의 제조방법 및 ｃｉｇｓ 광흡수 잉크 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61237476A (ja) * | 1985-04-12 | 1986-10-22 | シーメンス・ソラー・インダストリエス・リミテッド・パートナーシップ | 化合物半導体の製造方法 |
| US4915745A (en) * | 1988-09-22 | 1990-04-10 | Atlantic Richfield Company | Thin film solar cell and method of making |
| JPH10135501A (ja) * | 1996-09-05 | 1998-05-22 | Yazaki Corp | 半導体装置及びその製造方法並びに太陽電池 |
| JP3249408B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置 |
| JP4056702B2 (ja) * | 2001-01-19 | 2008-03-05 | 松下電器産業株式会社 | 化合物半導体薄膜の製造方法 |
| JP3897622B2 (ja) * | 2002-03-18 | 2007-03-28 | 松下電器産業株式会社 | 化合物半導体薄膜の製造方法 |
| JP2007201304A (ja) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | 太陽電池およびその製造方法 |
-
2004
- 2004-12-28 JP JP2004379933A patent/JP2006186200A/ja active Pending
-
2005
- 2005-12-27 EP EP05822368A patent/EP1845563A4/en not_active Withdrawn
- 2005-12-27 CN CNA2005800452987A patent/CN101095242A/zh active Pending
- 2005-12-27 WO PCT/JP2005/023893 patent/WO2006070800A1/ja active Application Filing
- 2005-12-27 US US11/722,853 patent/US20070283998A1/en not_active Abandoned
- 2005-12-27 KR KR1020077014645A patent/KR20070099575A/ko not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800260A (zh) * | 2009-02-10 | 2010-08-11 | 胡倾宇 | 一种太阳能电池用薄膜材料的制造方法 |
| CN101800260B (zh) * | 2009-02-10 | 2014-04-16 | 胡倾宇 | 一种太阳能电池用薄膜材料的制造方法 |
| TWI583811B (zh) * | 2010-01-07 | 2017-05-21 | Jx Nippon Mining & Metals Corp | A Cu-Ga sputtering target, a method for manufacturing the target, a light absorbing layer, and a solar cell using the light absorbing layer |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070283998A1 (en) | 2007-12-13 |
| JP2006186200A (ja) | 2006-07-13 |
| EP1845563A1 (en) | 2007-10-17 |
| EP1845563A4 (en) | 2013-03-20 |
| WO2006070800A1 (ja) | 2006-07-06 |
| KR20070099575A (ko) | 2007-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101095242A (zh) | 前驱膜及其形成方法 | |
| JP4384237B2 (ja) | Ｃｉｓ系薄膜太陽電池の製造方法 | |
| JP4540724B2 (ja) | Ｃｉｓ系薄膜太陽電池の製造方法 | |
| CN101459200B (zh) | 柔性铜铟镓硒薄膜太阳电池吸收层的制备方法 | |
| US9013021B2 (en) | Optical absorbers | |
| US9087954B2 (en) | Method for producing the pentanary compound semiconductor CZTSSe, and thin-film solar cell | |
| US8394659B1 (en) | Nitrogen reactive sputtering of Cu-In-Ga-N for solar cells | |
| US20140182665A1 (en) | Optical Absorbers | |
| JP2011129631A (ja) | Ｃｉｓ系薄膜太陽電池の製造方法 | |
| CN108401469A (zh) | 太阳能电池及其制造方法 | |
| US9431558B2 (en) | CIGS type compound solar cell | |
| KR102042026B1 (ko) | 태양전지 | |
| EP2702615B1 (en) | Method of preparing a solar cell | |
| CN103003955B (zh) | Cis类薄膜太阳电池 | |
| CN104282781A (zh) | 太阳能电池吸收薄膜及其制造方法 | |
| US9177876B2 (en) | Optical absorbers | |
| Chantana et al. | Position Influence of Sputtered Zn1–x Mg x O/Zn1–x Mg x O: Al Layers in Flexible and Cd-Free Cu (In, Ga)(S, Se) 2 Solar Cells | |
| US20130137208A1 (en) | Method for manufacturing solar cell module | |
| KR20150031978A (ko) | 태양전지 | |
| KR20150041927A (ko) | 태양전지 | |
| US20180090630A1 (en) | Photoelectric conversion element, multi-junction photoelectric conversion element, solar cell module, and solar power system | |
| KR101459830B1 (ko) | 태양전지 및 이의 제조 방법 | |
| CN102074597A (zh) | 铜铟镓硒太阳能电池及其制作方法 | |
| KR20140027629A (ko) | 태양전지 및 이의 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |