WO2008120307A1 - Ｃｉｓ系薄膜太陽電池サブモジュールの製造システム - Google Patents

Ｃｉｓ系薄膜太陽電池サブモジュールの製造システム Download PDF

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Publication number
WO2008120307A1
WO2008120307A1 PCT/JP2007/056624 JP2007056624W WO2008120307A1 WO 2008120307 A1 WO2008120307 A1 WO 2008120307A1 JP 2007056624 W JP2007056624 W JP 2007056624W WO 2008120307 A1 WO2008120307 A1 WO 2008120307A1
Authority
WO
WIPO (PCT)
Prior art keywords
type
cis based
layer
solar cell
thin film
Prior art date
Application number
PCT/JP2007/056624
Other languages
English (en)
French (fr)
Inventor
Katsumi Kushiya
Original Assignee
Showa Shell Sekiyu K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Shell Sekiyu K.K. filed Critical Showa Shell Sekiyu K.K.
Priority to PCT/JP2007/056624 priority Critical patent/WO2008120307A1/ja
Priority to TW096115593A priority patent/TW200840066A/zh
Publication of WO2008120307A1 publication Critical patent/WO2008120307A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

【課題】金属裏面電極層、ｐ型ＣＩＳ系光吸収層、ｎ型高抵抗バッファ層、ｎ型透明導電膜窓層等の薄膜製膜工程を有するＣＩＳ系薄膜太陽電池の製造システムにおいて、所定の単位枚数の基板上に上記薄膜層を一括して製膜する各バッチ工程を、その処理速度の違いを解消して、インライン型に連結させる。 【解決手段】基板上に、金属裏面電極層、ｐ型ＣＩＳ系光吸収層、ｎ型高抵抗バッファ層、及びｎ型透明導電膜窓層を順次積層させて製膜する工程からなる太陽電池サブモジュールの製造システムにおいて、上記各製膜工程前に、基板を一時保管するラインバッファが設置されていることを特徴とするＣＩＳ系薄膜太陽電池サブモジュールの製造システム。
PCT/JP2007/056624 2007-03-28 2007-03-28 Ｃｉｓ系薄膜太陽電池サブモジュールの製造システム WO2008120307A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/056624 WO2008120307A1 (ja) 2007-03-28 2007-03-28 Ｃｉｓ系薄膜太陽電池サブモジュールの製造システム
TW096115593A TW200840066A (en) 2007-03-28 2007-05-02 Fabrication system of CIS based thin film solar cell sub-module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056624 WO2008120307A1 (ja) 2007-03-28 2007-03-28 Ｃｉｓ系薄膜太陽電池サブモジュールの製造システム

Publications (1)

Publication Number Publication Date
WO2008120307A1 true WO2008120307A1 (ja) 2008-10-09

Family

ID=39807898

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056624 WO2008120307A1 (ja) 2007-03-28 2007-03-28 Ｃｉｓ系薄膜太陽電池サブモジュールの製造システム

Country Status (2)

Country Link
TW (1) TW200840066A (ja)
WO (1) WO2008120307A1 (ja)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209744A (ja) * 1989-02-09 1990-08-21 Nitto Denko Corp 半導体ウエハの多分岐型搬送処理装置
JPH07297258A (ja) * 1994-04-26 1995-11-10 Tokyo Electron Ltd 板状体の搬送装置
JPH10335267A (ja) * 1997-05-30 1998-12-18 Mitsubishi Electric Corp 半導体装置の製造方法
JP2001206543A (ja) * 2000-01-31 2001-07-31 Mitsubishi Electric Corp 自動枚葉処理ライン
JP2006013258A (ja) * 2004-06-28 2006-01-12 Kyocera Corp 太陽電池素子の製造方法
WO2006062206A1 (ja) * 2004-12-09 2006-06-15 Showa Shell Sekiyu K.K. Ｃｉｓ系薄膜太陽電池及びその作製方法
WO2006070800A1 (ja) * 2004-12-28 2006-07-06 Showa Shell Sekiyu K.K. プリカーサ膜及びその製膜方法
WO2006126598A1 (ja) * 2005-05-27 2006-11-30 Showa Shell Sekiyu K.K. Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層（透明導電膜）連続製膜方法及びその連続製膜方法を実施するための連続製膜装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209744A (ja) * 1989-02-09 1990-08-21 Nitto Denko Corp 半導体ウエハの多分岐型搬送処理装置
JPH07297258A (ja) * 1994-04-26 1995-11-10 Tokyo Electron Ltd 板状体の搬送装置
JPH10335267A (ja) * 1997-05-30 1998-12-18 Mitsubishi Electric Corp 半導体装置の製造方法
JP2001206543A (ja) * 2000-01-31 2001-07-31 Mitsubishi Electric Corp 自動枚葉処理ライン
JP2006013258A (ja) * 2004-06-28 2006-01-12 Kyocera Corp 太陽電池素子の製造方法
WO2006062206A1 (ja) * 2004-12-09 2006-06-15 Showa Shell Sekiyu K.K. Ｃｉｓ系薄膜太陽電池及びその作製方法
WO2006070800A1 (ja) * 2004-12-28 2006-07-06 Showa Shell Sekiyu K.K. プリカーサ膜及びその製膜方法
WO2006126598A1 (ja) * 2005-05-27 2006-11-30 Showa Shell Sekiyu K.K. Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層（透明導電膜）連続製膜方法及びその連続製膜方法を実施するための連続製膜装置

Also Published As

Publication number Publication date
TW200840066A (en) 2008-10-01

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