CN1956173B - 半导体器件以及其制造方法 - Google Patents
半导体器件以及其制造方法 Download PDFInfo
- Publication number
- CN1956173B CN1956173B CN2006101365412A CN200610136541A CN1956173B CN 1956173 B CN1956173 B CN 1956173B CN 2006101365412 A CN2006101365412 A CN 2006101365412A CN 200610136541 A CN200610136541 A CN 200610136541A CN 1956173 B CN1956173 B CN 1956173B
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- CN
- China
- Prior art keywords
- interlayer dielectric
- wiring
- sealing ring
- groove
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000011229 interlayer Substances 0.000 claims description 194
- 239000010410 layer Substances 0.000 claims description 179
- 238000007789 sealing Methods 0.000 claims description 69
- 238000005530 etching Methods 0.000 claims description 58
- 230000015572 biosynthetic process Effects 0.000 claims description 41
- 239000011347 resin Substances 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 abstract description 13
- 239000000565 sealant Substances 0.000 description 132
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 10
- 208000037656 Respiratory Sounds Diseases 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000004382 potting Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003518 caustics Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Dicing (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-309745 | 2005-10-25 | ||
JP2005309745 | 2005-10-25 | ||
JP2005309745A JP4699172B2 (ja) | 2005-10-25 | 2005-10-25 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1956173A CN1956173A (zh) | 2007-05-02 |
CN1956173B true CN1956173B (zh) | 2010-05-12 |
Family
ID=37984544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101365412A Expired - Fee Related CN1956173B (zh) | 2005-10-25 | 2006-10-25 | 半导体器件以及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7714413B2 (zh) |
JP (1) | JP4699172B2 (zh) |
KR (1) | KR101297022B1 (zh) |
CN (1) | CN1956173B (zh) |
TW (1) | TWI406339B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8829653B2 (en) | 2005-10-11 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Exclusion zone for stress-sensitive circuit design |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3779243B2 (ja) | 2002-07-31 | 2006-05-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR100995558B1 (ko) | 2007-03-22 | 2010-11-22 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 반도체 장치의 제조 방법 |
US7952167B2 (en) * | 2007-04-27 | 2011-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Scribe line layout design |
US8125052B2 (en) * | 2007-05-14 | 2012-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal ring structure with improved cracking protection |
JP2009021474A (ja) * | 2007-07-13 | 2009-01-29 | Nec Electronics Corp | 半導体装置 |
US8102027B2 (en) * | 2007-08-21 | 2012-01-24 | Broadcom Corporation | IC package sacrificial structures for crack propagation confinement |
JP4405537B2 (ja) * | 2007-08-30 | 2010-01-27 | 富士通株式会社 | キャパシタ内蔵インタポーザ、それを備えた半導体装置及びキャパシタ内蔵インタポーザの製造方法 |
US8643147B2 (en) * | 2007-11-01 | 2014-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Seal ring structure with improved cracking protection and reduced problems |
JP2009182181A (ja) | 2008-01-31 | 2009-08-13 | Toshiba Corp | 半導体装置 |
US8334582B2 (en) * | 2008-06-26 | 2012-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protective seal ring for preventing die-saw induced stress |
KR20100006756A (ko) * | 2008-07-10 | 2010-01-21 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US7790535B2 (en) * | 2008-09-16 | 2010-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Depletion-free MOS using atomic-layer doping |
US7906836B2 (en) * | 2008-11-14 | 2011-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat spreader structures in scribe lines |
US8368180B2 (en) * | 2009-02-18 | 2013-02-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Scribe line metal structure |
JP4987897B2 (ja) * | 2009-03-23 | 2012-07-25 | 株式会社東芝 | 半導体装置 |
JP5439901B2 (ja) * | 2009-03-31 | 2014-03-12 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US8921144B2 (en) | 2010-06-25 | 2014-12-30 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
US9117831B2 (en) * | 2011-01-11 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Seal ring structure for integrated circuit chips |
US8810001B2 (en) * | 2011-06-13 | 2014-08-19 | Mediatek Inc. | Seal ring structure with capacitor |
JP5849478B2 (ja) * | 2011-07-11 | 2016-01-27 | 富士通セミコンダクター株式会社 | 半導体装置および試験方法 |
US8587090B2 (en) * | 2011-07-29 | 2013-11-19 | Mediatek Inc. | Die seal ring structure |
US8742598B2 (en) * | 2011-10-05 | 2014-06-03 | Infineon Technologies Ag | Semiconductor structure and method for making same |
CN107359139B (zh) * | 2012-07-19 | 2019-11-12 | 瑞萨电子株式会社 | 半导体装置 |
JP5968711B2 (ja) * | 2012-07-25 | 2016-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6132525B2 (ja) * | 2012-11-30 | 2017-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6117246B2 (ja) * | 2013-01-11 | 2017-04-19 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN104701271A (zh) | 2013-12-05 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US9406608B2 (en) * | 2014-10-16 | 2016-08-02 | Globalfoundries Inc. | Dummy metal structure and method of forming dummy metal structure |
JP6086934B2 (ja) | 2015-01-14 | 2017-03-01 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
CN105845665B (zh) * | 2015-01-16 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法和电子装置 |
US9659879B1 (en) * | 2015-10-30 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company | Semiconductor device having a guard ring |
JP6982976B2 (ja) * | 2017-04-19 | 2021-12-17 | キヤノン株式会社 | 半導体デバイスの製造方法および半導体デバイス |
US10930730B2 (en) * | 2017-07-18 | 2021-02-23 | Qualcomm Incorporated | Enhanced active and passive devices for radio frequency (RF) process and design technology |
US10515921B2 (en) * | 2017-07-27 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and method of fabricating semiconductor package |
US11177253B2 (en) * | 2018-11-09 | 2021-11-16 | Texas Instruments Incorporated | Transistor with integrated capacitor |
CN109935552B (zh) * | 2019-03-29 | 2021-02-12 | 长江存储科技有限责任公司 | 3d存储器件及其制造方法 |
CN110034064A (zh) * | 2019-04-10 | 2019-07-19 | 德淮半导体有限公司 | 半导体结构及其形成方法 |
CN113066763B (zh) * | 2021-03-24 | 2022-04-26 | 长鑫存储技术有限公司 | 半导体结构及其制作方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1476072A (zh) * | 2002-08-12 | 2004-02-18 | ������������ʽ���� | 半导体器件 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000277465A (ja) | 1999-03-26 | 2000-10-06 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP4173307B2 (ja) * | 1999-06-24 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体集積回路の製造方法 |
JP4118029B2 (ja) * | 2001-03-09 | 2008-07-16 | 富士通株式会社 | 半導体集積回路装置とその製造方法 |
JP3538170B2 (ja) * | 2001-09-11 | 2004-06-14 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US20030213617A1 (en) * | 2002-05-20 | 2003-11-20 | Subramanian Karthikeyan | Method and structure of a reducing intra-level and inter-level capacitance of a semiconductor device |
JP4250006B2 (ja) * | 2002-06-06 | 2009-04-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP3961398B2 (ja) * | 2002-10-30 | 2007-08-22 | 富士通株式会社 | 半導体装置 |
JP2004153015A (ja) * | 2002-10-30 | 2004-05-27 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP4434606B2 (ja) | 2003-03-27 | 2010-03-17 | 株式会社東芝 | 半導体装置、半導体装置の製造方法 |
JP3778445B2 (ja) * | 2003-03-27 | 2006-05-24 | 富士通株式会社 | 半導体装置 |
CN1617312A (zh) * | 2003-11-10 | 2005-05-18 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
US7344992B2 (en) * | 2003-12-31 | 2008-03-18 | Dongbu Electronics Co., Ltd. | Method for forming via hole and trench for dual damascene interconnection |
JP2005197606A (ja) * | 2004-01-09 | 2005-07-21 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4619705B2 (ja) * | 2004-01-15 | 2011-01-26 | 株式会社東芝 | 半導体装置 |
JP4776195B2 (ja) * | 2004-09-10 | 2011-09-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2006128543A (ja) * | 2004-11-01 | 2006-05-18 | Nec Electronics Corp | 電子デバイスの製造方法 |
JP4455356B2 (ja) * | 2005-01-28 | 2010-04-21 | Necエレクトロニクス株式会社 | 半導体装置 |
JP5096669B2 (ja) * | 2005-07-06 | 2012-12-12 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
-
2005
- 2005-10-25 JP JP2005309745A patent/JP4699172B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-29 TW TW095136222A patent/TWI406339B/zh not_active IP Right Cessation
- 2006-10-19 US US11/551,042 patent/US7714413B2/en not_active Expired - Fee Related
- 2006-10-24 KR KR1020060103607A patent/KR101297022B1/ko active IP Right Grant
- 2006-10-25 CN CN2006101365412A patent/CN1956173B/zh not_active Expired - Fee Related
-
2010
- 2010-03-10 US US12/721,048 patent/US7884011B2/en not_active Expired - Fee Related
- 2010-11-05 US US12/940,419 patent/US8169080B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1476072A (zh) * | 2002-08-12 | 2004-02-18 | ������������ʽ���� | 半导体器件 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8829653B2 (en) | 2005-10-11 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Exclusion zone for stress-sensitive circuit design |
Also Published As
Publication number | Publication date |
---|---|
US7714413B2 (en) | 2010-05-11 |
US7884011B2 (en) | 2011-02-08 |
US20100167525A1 (en) | 2010-07-01 |
CN1956173A (zh) | 2007-05-02 |
US20070090447A1 (en) | 2007-04-26 |
US20110101530A1 (en) | 2011-05-05 |
JP2007123328A (ja) | 2007-05-17 |
TW200737351A (en) | 2007-10-01 |
KR20070044785A (ko) | 2007-04-30 |
JP4699172B2 (ja) | 2011-06-08 |
US8169080B2 (en) | 2012-05-01 |
TWI406339B (zh) | 2013-08-21 |
KR101297022B1 (ko) | 2013-08-14 |
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Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: NEC ELECTRONICS Corp. |
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Effective date of registration: 20100916 Address after: Kanagawa, Japan Patentee after: NEC ELECTRONICS Corp. Address before: Tokyo, Japan Patentee before: Renesas Technology Corp. |
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Granted publication date: 20100512 Termination date: 20131025 |