CN1914800A - 表面安装型saw元件 - Google Patents
表面安装型saw元件 Download PDFInfo
- Publication number
- CN1914800A CN1914800A CNA2004800413598A CN200480041359A CN1914800A CN 1914800 A CN1914800 A CN 1914800A CN A2004800413598 A CNA2004800413598 A CN A2004800413598A CN 200480041359 A CN200480041359 A CN 200480041359A CN 1914800 A CN1914800 A CN 1914800A
- Authority
- CN
- China
- Prior art keywords
- piezoelectric substrate
- sealing resin
- acoustic wave
- base plate
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 claims abstract description 104
- 239000011347 resin Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 238000010897 surface acoustic wave method Methods 0.000 claims description 116
- 238000007789 sealing Methods 0.000 claims description 85
- 238000009434 installation Methods 0.000 claims description 40
- 238000009413 insulation Methods 0.000 claims description 13
- 238000010586 diagram Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052770 Uranium Inorganic materials 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 102000004726 Connectin Human genes 0.000 abstract 1
- 108010002947 Connectin Proteins 0.000 abstract 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 19
- 230000005616 pyroelectricity Effects 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 3
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- XGCILSHUAUFSLI-UHFFFAOYSA-N dodecalithium;tetraborate Chemical compound [Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] XGCILSHUAUFSLI-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004029848A JP2005223641A (ja) | 2004-02-05 | 2004-02-05 | 表面実装型sawデバイス |
JP029848/2004 | 2004-02-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1914800A true CN1914800A (zh) | 2007-02-14 |
CN100477517C CN100477517C (zh) | 2009-04-08 |
Family
ID=34835966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800413598A Expired - Fee Related CN100477517C (zh) | 2004-02-05 | 2004-11-12 | 表面安装型saw元件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7608977B2 (zh) |
EP (1) | EP1715581A4 (zh) |
JP (1) | JP2005223641A (zh) |
CN (1) | CN100477517C (zh) |
WO (1) | WO2005076472A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101978490B (zh) * | 2008-03-31 | 2012-10-17 | 株式会社村田制作所 | 电子元器件组件及该电子元器件组件的制造方法 |
CN109477242A (zh) * | 2017-06-29 | 2019-03-15 | 京瓷株式会社 | 压电基板以及表面声波器件 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4856014B2 (ja) * | 2007-06-28 | 2012-01-18 | 三菱電機株式会社 | 回路モジュールとその製造方法 |
JP5686943B2 (ja) * | 2008-09-17 | 2015-03-18 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
ATE504974T1 (de) * | 2008-11-13 | 2011-04-15 | Micro Crystal Ag | Gehäuse für piezoelektrischen resonator |
US7791255B2 (en) * | 2008-11-13 | 2010-09-07 | Eta Sa Manufacture Horlogère Suisse | Packaging for piezoelectric resonator |
US8922100B2 (en) * | 2009-03-04 | 2014-12-30 | Honda Motor Co., Ltd. | Woven active fiber composite |
JP5029704B2 (ja) * | 2010-01-20 | 2012-09-19 | 株式会社村田製作所 | 弾性波デュプレクサ |
JP2013145932A (ja) * | 2010-05-07 | 2013-07-25 | Murata Mfg Co Ltd | 弾性表面波装置及びその製造方法 |
WO2015058105A1 (en) * | 2013-10-18 | 2015-04-23 | Stc.Unm | Methods to introduce sub-micrometer, symmetry-breaking surface corrugation to silicon substrates to increase light trapping |
US9680445B2 (en) * | 2014-10-31 | 2017-06-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Packaged device including cavity package with elastic layer within molding compound |
WO2019044309A1 (ja) * | 2017-08-31 | 2019-03-07 | 株式会社村田製作所 | 弾性波装置およびそれを搭載した弾性波モジュール |
CN111130489A (zh) * | 2019-12-04 | 2020-05-08 | 天津大学 | 芯片封装模块及封装方法及具有该模块的电子装置 |
JP7508090B2 (ja) | 2020-07-03 | 2024-07-01 | 三安ジャパンテクノロジー株式会社 | 弾性波デバイスパッケージ |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0314375A (ja) | 1989-06-13 | 1991-01-23 | Mitsubishi Electric Corp | テレビジヨン受信機の電源回路 |
JPH0242809A (ja) * | 1989-06-26 | 1990-02-13 | Murata Mfg Co Ltd | 弾性表面波装置 |
JPH066175A (ja) * | 1992-06-19 | 1994-01-14 | Murata Mfg Co Ltd | 圧電部品 |
JP3395796B2 (ja) * | 1992-08-18 | 2003-04-14 | ティーディーケイ株式会社 | 焦電基板の加熱方法及び加熱装置 |
JPH06305895A (ja) * | 1993-04-26 | 1994-11-01 | Hitachi Metals Ltd | タンタル酸リチウム単結晶および弾性表面波素子および移動通信用電話 |
JPH085758B2 (ja) | 1993-04-27 | 1996-01-24 | 日本電気株式会社 | 結晶加工方法 |
US6319430B1 (en) * | 1997-07-25 | 2001-11-20 | Crystal Technology, Inc. | Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same |
DE69819971T2 (de) * | 1997-07-25 | 2004-09-02 | Crystal Technology, Inc., Palo Alto | Vorbehandelte Kristalle aus Lithiumniobat und Lithiumtantalat und das Verfahren zu ihrer Herstellung |
JP2001230095A (ja) * | 2000-02-14 | 2001-08-24 | Denki Kagaku Kogyo Kk | 電子部品容器 |
JP3829644B2 (ja) | 2000-05-01 | 2006-10-04 | 株式会社村田製作所 | 表面波装置、横波トランスデューサー及び縦波トランスデューサーの製造方法 |
WO2002005424A1 (en) * | 2000-07-06 | 2002-01-17 | Kabushiki Kaisha Toshiba | Surface acoustic wave device and method of manufacturing the device |
JP4145476B2 (ja) * | 2000-09-25 | 2008-09-03 | Tdk株式会社 | 弾性表面波装置の製造方法 |
EP1361657B1 (en) * | 2001-02-06 | 2013-07-24 | Panasonic Corporation | Surface acoustic wave device |
JP2003031711A (ja) * | 2001-07-18 | 2003-01-31 | Denki Kagaku Kogyo Kk | 帯電量の少ない電子部品 |
EP1475890A1 (en) | 2002-02-12 | 2004-11-10 | Matsushita Electric Industrial Co., Ltd. | Elastic surface wave apparatus |
US6932957B2 (en) * | 2002-06-28 | 2005-08-23 | Silicon Light Machines Corporation | Method and apparatus for increasing bulk conductivity of a ferroelectric material |
JP2004129224A (ja) * | 2002-07-31 | 2004-04-22 | Murata Mfg Co Ltd | 圧電部品およびその製造方法 |
JP2005020423A (ja) | 2003-06-26 | 2005-01-20 | Murata Mfg Co Ltd | 弾性表面波装置 |
US7153487B2 (en) * | 2004-05-25 | 2006-12-26 | Crystal Technology, Inc. | Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals |
US7439648B2 (en) * | 2004-08-27 | 2008-10-21 | Kyocera Corporation | Surface acoustic wave device and manufacturing method therefor, and communications equipment |
-
2004
- 2004-02-05 JP JP2004029848A patent/JP2005223641A/ja active Pending
- 2004-11-12 EP EP04821283A patent/EP1715581A4/en not_active Withdrawn
- 2004-11-12 US US10/586,224 patent/US7608977B2/en not_active Expired - Fee Related
- 2004-11-12 WO PCT/JP2004/016857 patent/WO2005076472A1/ja not_active Application Discontinuation
- 2004-11-12 CN CNB2004800413598A patent/CN100477517C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101978490B (zh) * | 2008-03-31 | 2012-10-17 | 株式会社村田制作所 | 电子元器件组件及该电子元器件组件的制造方法 |
CN109477242A (zh) * | 2017-06-29 | 2019-03-15 | 京瓷株式会社 | 压电基板以及表面声波器件 |
CN109477242B (zh) * | 2017-06-29 | 2021-07-23 | 京瓷株式会社 | 压电基板以及表面声波器件 |
Also Published As
Publication number | Publication date |
---|---|
US7608977B2 (en) | 2009-10-27 |
US20070164637A1 (en) | 2007-07-19 |
EP1715581A4 (en) | 2007-09-12 |
JP2005223641A (ja) | 2005-08-18 |
WO2005076472A1 (ja) | 2005-08-18 |
CN100477517C (zh) | 2009-04-08 |
EP1715581A1 (en) | 2006-10-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEIKO EPSON CORP. Free format text: FORMER OWNER: EPSON TOYOCOM CORP. Effective date: 20111017 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111017 Address after: Tokyo, Japan, Japan Patentee after: Seiko Epson Corp. Address before: Tokyo, Japan, Japan Patentee before: Epson Toyocom Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090408 Termination date: 20191112 |
|
CF01 | Termination of patent right due to non-payment of annual fee |