ATE504974T1 - Gehäuse für piezoelektrischen resonator - Google Patents

Gehäuse für piezoelektrischen resonator

Info

Publication number
ATE504974T1
ATE504974T1 AT08169052T AT08169052T ATE504974T1 AT E504974 T1 ATE504974 T1 AT E504974T1 AT 08169052 T AT08169052 T AT 08169052T AT 08169052 T AT08169052 T AT 08169052T AT E504974 T1 ATE504974 T1 AT E504974T1
Authority
AT
Austria
Prior art keywords
base part
conductive vias
piezoelectric resonator
resonator
main portion
Prior art date
Application number
AT08169052T
Other languages
English (en)
Inventor
Piazza Silvio Dalla
Thierry Hessler
Original Assignee
Micro Crystal Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micro Crystal Ag filed Critical Micro Crystal Ag
Application granted granted Critical
Publication of ATE504974T1 publication Critical patent/ATE504974T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02952—Means for compensation or elimination of undesirable effects of parasitic capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094—Feed-through, via
    • B81B2207/096—Feed-through, via through the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
AT08169052T 2008-11-13 2008-11-13 Gehäuse für piezoelektrischen resonator ATE504974T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08169052A EP2187520B1 (de) 2008-11-13 2008-11-13 Gehäuse für piezoelektrischen Resonator

Publications (1)

Publication Number Publication Date
ATE504974T1 true ATE504974T1 (de) 2011-04-15

Family

ID=40386464

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08169052T ATE504974T1 (de) 2008-11-13 2008-11-13 Gehäuse für piezoelektrischen resonator

Country Status (6)

Country Link
EP (1) EP2187520B1 (de)
JP (1) JP5144627B2 (de)
CN (1) CN101902210B (de)
AT (1) ATE504974T1 (de)
DE (1) DE602008006098D1 (de)
TW (1) TWI435486B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7131890B2 (ja) 2017-04-17 2022-09-06 住友金属鉱山株式会社 異方性磁石の成形用金型及びこれを用いた異方性磁石の製造方法
JP6990084B2 (ja) * 2017-10-02 2022-01-12 京セラ株式会社 圧電デバイス
CN112582773A (zh) * 2020-12-28 2021-03-30 南京中电熊猫晶体科技有限公司 一种基于硅硅键合的谐振器整板基座与盖板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3985780B2 (ja) * 2003-05-29 2007-10-03 エプソントヨコム株式会社 圧電デバイス
JP2005109221A (ja) * 2003-09-30 2005-04-21 Toshiba Corp ウェーハレベルパッケージ及びその製造方法
JP2005223641A (ja) * 2004-02-05 2005-08-18 Toyo Commun Equip Co Ltd 表面実装型ｓａｗデバイス
JP3875240B2 (ja) * 2004-03-31 2007-01-31 株式会社東芝 電子部品の製造方法
US7407826B2 (en) * 2005-03-21 2008-08-05 Honeywell International Inc. Vacuum packaged single crystal silicon device
JP2007074647A (ja) * 2005-09-09 2007-03-22 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP2007235304A (ja) * 2006-02-28 2007-09-13 Matsushita Electric Ind Co Ltd 電子部品とその製造方法およびそれを用いた通信機器
US7508286B2 (en) * 2006-09-28 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. HBAR oscillator and method of manufacture

Also Published As

Publication number Publication date
JP5144627B2 (ja) 2013-02-13
CN101902210A (zh) 2010-12-01
EP2187520B1 (de) 2011-04-06
JP2010119107A (ja) 2010-05-27
CN101902210B (zh) 2013-10-16
TW201027813A (en) 2010-07-16
DE602008006098D1 (de) 2011-05-19
TWI435486B (zh) 2014-04-21
EP2187520A1 (de) 2010-05-19

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Legal Events

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