JP2008199007A - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
- Publication number
- JP2008199007A JP2008199007A JP2008012569A JP2008012569A JP2008199007A JP 2008199007 A JP2008199007 A JP 2008199007A JP 2008012569 A JP2008012569 A JP 2008012569A JP 2008012569 A JP2008012569 A JP 2008012569A JP 2008199007 A JP2008199007 A JP 2008199007A
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- Prior art keywords
- housing
- power semiconductor
- semiconductor module
- sealing
- load terminal
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000007789 sealing Methods 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 17
- 239000007788 liquid Substances 0.000 abstract description 6
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000003825 pressing Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 5
- 238000001746 injection moulding Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Casings For Electric Apparatus (AREA)
- Inverter Devices (AREA)
- Bipolar Transistors (AREA)
Abstract
【解決手段】パワー半導体モジュールであって、ハウジング(12)を有し、このハウジング内に負荷端子要素(16)が配置されていて、これらの負荷端子要素が接触装置(17)を有し、これらの接触装置がハウジング(12)のハウジング凹部(26)内に配置されていて、これらのハウジング凹部がハウジング(12)の付属の側壁(28)に形成されていて、またこのハウジング(12)を被うカバー(14)を有するパワー半導体モジュールにおいて、ハウジング(12)が上側にて材料一体式で、周回する密封フレーム(22)を備えて形成されていて、カバー(14)が、その周回する密封フレーム(22)に覆い被さる外縁(24)を備えて形成されていること。
【選択図】図4
Description
12 ハウジング
14 カバー
16 負荷端子要素
17 負荷端子要素の接触装置
18 カバーの隆起部
20 ハウジングの支持ショルダ
22 ハウジングの密封フレーム
24 カバーの外縁
26 ハウジングのハウジング凹部
28 ハウジングの側壁
30 ハウジング凹部の内縁
32 密封フレームの一部分
34 密封リブ
36 負荷端子要素の湾曲部
38 基板
40 基板の金属層
42 基板の構造化金属層
44 負荷端子要素の接触フット
46 密封フレームの上縁
48 弾性密封要素
50 弾性密封要素用の溝
Claims (7)
- パワー半導体モジュールであって、ハウジング(12)を有し、このハウジング内に負荷端子要素(16)が配置されていて、これらの負荷端子要素が接触装置(17)を有し、これらの接触装置がハウジング(12)のハウジング凹部(26)内に配置されていて、これらのハウジング凹部がハウジング(12)の付属の側壁(28)に形成されていて、またこのハウジング(12)を被うカバー(14)を有するパワー半導体モジュールにおいて、
ハウジング(12)が上側にて材料一体式で、周回する密封フレーム(22)を備えて形成されていて、カバー(14)が、その周回する密封フレーム(22)に覆い被さる外縁(24)を備えて形成されていることを特徴とするパワー半導体モジュール。 - 各々のハウジング凹部(26)がその内縁(30)にて、密封フレーム(22)の一部分を形成する密封リブ(34)を有すること、及び付属の負荷端子要素(16)が、この密封リブ(34)のまわりを回るように曲げられた湾曲部(36)を備えて形成されていて、この湾曲部に付属の接触装置(17)が続いていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 密封リブ(34)が付属のハウジング凹部(26)の深さ(T)よりも大きい高さ(H)を有することを特徴とする、請求項2に記載のパワー半導体モジュール。
- 密封リブ(34)が接触装置(17)の壁厚(W)よりも大きい高さ(H)を有することを特徴とする、請求項2に記載のパワー半導体モジュール。
- 密封フレーム(22)又は少なくとも密封リブ(34)がその上縁(46)にて弾性密封要素(48)を有することを特徴とする、請求項1〜4のいずれか一項に記載のパワー半導体モジュール。
- カバー(14)が、各々の負荷端子要素(16)の湾曲部(36)に覆い被さる縁部分(24)を備えて形成されていることを特徴とする、請求項2〜5のいずれか一項に記載のパワー半導体モジュール。
- ハウジング(12)が特定数の基板(38)及び/又は部分モジュール用に設けられていることを特徴とする、請求項1〜6のいずれか一項に記載のパワー半導体モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007007224.6 | 2007-02-14 | ||
DE102007007224A DE102007007224B4 (de) | 2007-02-14 | 2007-02-14 | Leistungshalbleitermodul mit einem Gehäuse |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008199007A true JP2008199007A (ja) | 2008-08-28 |
JP5171284B2 JP5171284B2 (ja) | 2013-03-27 |
Family
ID=39356628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008012569A Active JP5171284B2 (ja) | 2007-02-14 | 2008-01-23 | パワー半導体モジュール |
Country Status (7)
Country | Link |
---|---|
US (1) | US7944701B2 (ja) |
EP (1) | EP1959494B1 (ja) |
JP (1) | JP5171284B2 (ja) |
AT (1) | ATE434266T1 (ja) |
DE (2) | DE102007007224B4 (ja) |
DK (1) | DK1959494T3 (ja) |
ES (1) | ES2326143T3 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008057831B4 (de) * | 2008-11-19 | 2010-09-16 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit Leistungshalbleitermodul und Treibereinrichtung |
DE102013113764B3 (de) | 2013-12-10 | 2014-09-25 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung |
US9856719B1 (en) | 2016-12-21 | 2018-01-02 | Kevin R. Williams | System for supplying power from the main powerhouse to a drill floor powerhouse |
US10247688B2 (en) | 2017-01-05 | 2019-04-02 | Kevin R. Williams | Moisture detecting system and method for use in an IGBT or a MOSFET |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076255A (ja) * | 2000-08-29 | 2002-03-15 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2004039858A (ja) * | 2002-07-03 | 2004-02-05 | Auto Network Gijutsu Kenkyusho:Kk | 電力回路部の防水方法及び電力回路部をもつパワーモジュール |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3143339A1 (de) | 1981-10-31 | 1983-05-19 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiteranordnung |
DE3604882A1 (de) * | 1986-02-15 | 1987-08-20 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul und verfahren zur herstellung des moduls |
DE4237632A1 (de) | 1992-11-07 | 1994-05-11 | Export Contor Ausenhandelsgese | Schaltungsanordnung |
DE9313483U1 (de) | 1993-09-07 | 1994-01-05 | Sze Microelectronics Gmbh | Vorrichtung zur Aufnahme |
DE4445125A1 (de) * | 1994-12-17 | 1996-06-20 | Wabco Gmbh | Gehäuse für ein elektrisches Bauteil |
DE19600619A1 (de) * | 1996-01-10 | 1997-07-17 | Bosch Gmbh Robert | Steuergerät bestehend aus mindestens zwei Gehäuseteilen |
DE10127947C1 (de) * | 2001-08-22 | 2002-10-17 | Semikron Elektronik Gmbh | Schaltungsanordnung |
DE10141114C1 (de) | 2001-06-08 | 2002-11-21 | Semikron Elektronik Gmbh | Schaltungsanordnung |
WO2003078211A1 (de) * | 2002-03-16 | 2003-09-25 | Conti Temic Microelectronic Gmbh | Elektronische baugruppe für ein kraftfahrzeug |
ES2298809T3 (es) * | 2003-08-01 | 2008-05-16 | Vdo Automotive Ag | Unidad electronica asi como procedimiento para fabricar una unidad electronica. |
JP2009119957A (ja) * | 2007-11-13 | 2009-06-04 | Mitsubishi Electric Corp | 電子制御装置および電子制御装置の製造方法 |
-
2007
- 2007-02-14 DE DE102007007224A patent/DE102007007224B4/de active Active
-
2008
- 2008-01-19 DE DE502008000036T patent/DE502008000036D1/de active Active
- 2008-01-19 AT AT08000987T patent/ATE434266T1/de active
- 2008-01-19 EP EP08000987A patent/EP1959494B1/de active Active
- 2008-01-19 ES ES08000987T patent/ES2326143T3/es active Active
- 2008-01-19 DK DK08000987T patent/DK1959494T3/da active
- 2008-01-23 JP JP2008012569A patent/JP5171284B2/ja active Active
- 2008-02-13 US US12/069,777 patent/US7944701B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076255A (ja) * | 2000-08-29 | 2002-03-15 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2004039858A (ja) * | 2002-07-03 | 2004-02-05 | Auto Network Gijutsu Kenkyusho:Kk | 電力回路部の防水方法及び電力回路部をもつパワーモジュール |
Also Published As
Publication number | Publication date |
---|---|
ES2326143T3 (es) | 2009-10-01 |
EP1959494A1 (de) | 2008-08-20 |
DK1959494T3 (da) | 2009-10-05 |
US7944701B2 (en) | 2011-05-17 |
DE502008000036D1 (de) | 2009-07-30 |
ATE434266T1 (de) | 2009-07-15 |
DE102007007224A1 (de) | 2008-08-28 |
US20080212302A1 (en) | 2008-09-04 |
JP5171284B2 (ja) | 2013-03-27 |
EP1959494B1 (de) | 2009-06-17 |
DE102007007224B4 (de) | 2009-06-10 |
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