WO2006056555A3 - Stromrichteranordnung - Google Patents

Stromrichteranordnung Download PDF

Info

Publication number
WO2006056555A3
WO2006056555A3 PCT/EP2005/056078 EP2005056078W WO2006056555A3 WO 2006056555 A3 WO2006056555 A3 WO 2006056555A3 EP 2005056078 W EP2005056078 W EP 2005056078W WO 2006056555 A3 WO2006056555 A3 WO 2006056555A3
Authority
WO
WIPO (PCT)
Prior art keywords
power
power converter
semiconductor element
component
circuit breaker
Prior art date
Application number
PCT/EP2005/056078
Other languages
English (en)
French (fr)
Other versions
WO2006056555A2 (de
Inventor
Eric Baudelot
Reinhold Bayerer
Richard Kenney
Herbert Leibold
Kenneth Thompson
Original Assignee
Siemens Ag
Infineon Technologies Ag
Eric Baudelot
Reinhold Bayerer
Richard Kenney
Herbert Leibold
Kenneth Thompson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Infineon Technologies Ag, Eric Baudelot, Reinhold Bayerer, Richard Kenney, Herbert Leibold, Kenneth Thompson filed Critical Siemens Ag
Publication of WO2006056555A2 publication Critical patent/WO2006056555A2/de
Publication of WO2006056555A3 publication Critical patent/WO2006056555A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dc-Dc Converters (AREA)
  • Rectifiers (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)

Abstract

Die Erfindung betrifft eine Stromrichteranordnung (1) mit mindestens einem Stromrichter(2) und mindestens einem Stromrichtergehäuse (3), wobei der Stromrichter eine Leistungskomponente (21) mit mindestens einem Leistungshalbleiterbauelement (22) aufweist, das Stromrichtergehäuse einen Innenraum (31) aufweist, in dem das Leistungshalbleiterbauelement der Leistungskomponente des Stromrichters angeordnet ist, im Innenraum des Stromrichtergehäuses mindestens eine weitere Leistungskomponente (81) des Stromrichters angeordnet ist und eine elektrische Kontaktfläche des Leistungshalbleiterbauelements und die weitere Leistungskomponente des Stromrichters mit Hilfe einer auf dem Leistungshalbleiterbauelement angeordneten elektrischen Isolationsfolie (7) elektrisch voneinander isoliert sind. Die Leistungskomponente ist beispielsweise ein Leistungsschalter. Der Leistungsschalter wird ungehäust im Stromrichtergehäuse angeordnet. Ein Verguss des Leistungsschalters mit Silikon ist nicht notwendig. Es resultiert ein einfacher und kompakter Aufbau.
PCT/EP2005/056078 2004-11-25 2005-11-18 Stromrichteranordnung WO2006056555A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004056984A DE102004056984A1 (de) 2004-11-25 2004-11-25 Stromrichteranordnung
DE102004056984.3 2004-11-25

Publications (2)

Publication Number Publication Date
WO2006056555A2 WO2006056555A2 (de) 2006-06-01
WO2006056555A3 true WO2006056555A3 (de) 2006-07-27

Family

ID=35809698

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/056078 WO2006056555A2 (de) 2004-11-25 2005-11-18 Stromrichteranordnung

Country Status (2)

Country Link
DE (1) DE102004056984A1 (de)
WO (1) WO2006056555A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007033288A1 (de) * 2007-07-17 2009-01-22 Siemens Ag Elektronisches Bauelement und Vorrichtung mit hoher Isolationsfestigkeit sowie Verfahren zu deren Herstellung
US11431257B2 (en) 2018-05-25 2022-08-30 Miba Energy Holding Gmbh Power module comprising a supporting cooling body

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3406420A1 (de) * 1983-02-28 1984-08-30 Sgs-Ates Componenti Elettronici S.P.A., Agrate Brianza, Mailand/Milano Halbleiter-leistungsvorrichtung mit mehreren parallel geschalteten, gleichen elementen
EP0262530A1 (de) * 1986-09-23 1988-04-06 Siemens Aktiengesellschaft Halbleiterbauelemente mit Leistungs-MOSFET und Steuerschaltung
EP0379616A1 (de) * 1989-01-26 1990-08-01 Siemens Aktiengesellschaft Halbleiterbauelement mit übereinander montierten Halbleiterkörpern
US5637922A (en) * 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
DE19617055C1 (de) * 1996-04-29 1997-06-26 Semikron Elektronik Gmbh Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise
DE19806017A1 (de) * 1997-03-05 1998-09-10 Lg Semicon Co Ltd Halbleiter-Multichip-Modul
US5994739A (en) * 1990-07-02 1999-11-30 Kabushiki Kaisha Toshiba Integrated circuit device
DE19902462A1 (de) * 1999-01-22 2000-08-10 Siemens Ag Halbleiterbauelement mit Chip-on-Chip-Aufbau
DE10038968A1 (de) * 2000-08-10 2002-03-07 Infineon Technologies Ag Schaltungsanordnung mit wenigstens zwei Halbleiterkörpern und einem Kühlkörper
DE10141877A1 (de) * 2001-08-28 2003-03-27 Infineon Technologies Ag Halbleiterbauteil und Konvertereinrichtung
WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3460973B2 (ja) * 1999-12-27 2003-10-27 三菱電機株式会社 電力変換装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3406420A1 (de) * 1983-02-28 1984-08-30 Sgs-Ates Componenti Elettronici S.P.A., Agrate Brianza, Mailand/Milano Halbleiter-leistungsvorrichtung mit mehreren parallel geschalteten, gleichen elementen
EP0262530A1 (de) * 1986-09-23 1988-04-06 Siemens Aktiengesellschaft Halbleiterbauelemente mit Leistungs-MOSFET und Steuerschaltung
EP0379616A1 (de) * 1989-01-26 1990-08-01 Siemens Aktiengesellschaft Halbleiterbauelement mit übereinander montierten Halbleiterkörpern
US5994739A (en) * 1990-07-02 1999-11-30 Kabushiki Kaisha Toshiba Integrated circuit device
US5637922A (en) * 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
DE19617055C1 (de) * 1996-04-29 1997-06-26 Semikron Elektronik Gmbh Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise
DE19806017A1 (de) * 1997-03-05 1998-09-10 Lg Semicon Co Ltd Halbleiter-Multichip-Modul
DE19902462A1 (de) * 1999-01-22 2000-08-10 Siemens Ag Halbleiterbauelement mit Chip-on-Chip-Aufbau
DE10038968A1 (de) * 2000-08-10 2002-03-07 Infineon Technologies Ag Schaltungsanordnung mit wenigstens zwei Halbleiterkörpern und einem Kühlkörper
DE10141877A1 (de) * 2001-08-28 2003-03-27 Infineon Technologies Ag Halbleiterbauteil und Konvertereinrichtung
WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

Also Published As

Publication number Publication date
WO2006056555A2 (de) 2006-06-01
DE102004056984A1 (de) 2006-06-08

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