WO2001088983A3 - Leistungshalbleitermodul - Google Patents

Leistungshalbleitermodul Download PDF

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Publication number
WO2001088983A3
WO2001088983A3 PCT/DE2001/001870 DE0101870W WO0188983A3 WO 2001088983 A3 WO2001088983 A3 WO 2001088983A3 DE 0101870 W DE0101870 W DE 0101870W WO 0188983 A3 WO0188983 A3 WO 0188983A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor module
power semiconductor
component
power
substrate
Prior art date
Application number
PCT/DE2001/001870
Other languages
English (en)
French (fr)
Other versions
WO2001088983A2 (de
Inventor
Reinhold Bayerer
Reinhold Dillig
Michael Kistner
Manfred Loddenkoetter
Sebastian Raith
Original Assignee
Eupec Gmbh & Co Kg
Siemens Ag
Reinhold Bayerer
Reinhold Dillig
Michael Kistner
Manfred Loddenkoetter
Sebastian Raith
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7642625&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2001088983(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Eupec Gmbh & Co Kg, Siemens Ag, Reinhold Bayerer, Reinhold Dillig, Michael Kistner, Manfred Loddenkoetter, Sebastian Raith filed Critical Eupec Gmbh & Co Kg
Publication of WO2001088983A2 publication Critical patent/WO2001088983A2/de
Publication of WO2001088983A3 publication Critical patent/WO2001088983A3/de
Priority to US10/298,396 priority Critical patent/US6835994B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Die Erfindung betrifft ein Leistungshalbleitermodul mit einem Leistungsbauteil (1) und einem Sensorikbauteil (2), bei dem das Sensorikbauteil (2) durch ein zusätzliches, gesondertes Substrat (7) von dem auf einem Substrat (3) vorgesehenen Leistungsbauteil (1) elektrisch und/oder mechanisch isoliert.
PCT/DE2001/001870 2000-05-18 2001-05-17 Leistungshalbleitermodul WO2001088983A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/298,396 US6835994B2 (en) 2000-05-18 2002-11-18 Power semiconductor module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10024516A DE10024516B4 (de) 2000-05-18 2000-05-18 Leistungshalbleitermodul
DE10024516.1 2000-05-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/298,396 Continuation US6835994B2 (en) 2000-05-18 2002-11-18 Power semiconductor module

Publications (2)

Publication Number Publication Date
WO2001088983A2 WO2001088983A2 (de) 2001-11-22
WO2001088983A3 true WO2001088983A3 (de) 2002-04-04

Family

ID=7642625

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/001870 WO2001088983A2 (de) 2000-05-18 2001-05-17 Leistungshalbleitermodul

Country Status (4)

Country Link
US (1) US6835994B2 (de)
CN (1) CN100388486C (de)
DE (1) DE10024516B4 (de)
WO (1) WO2001088983A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10309302B4 (de) * 2003-03-04 2007-09-27 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Sensorbauteil
DE10316356B4 (de) * 2003-04-10 2012-07-26 Semikron Elektronik Gmbh & Co. Kg Modular aufgebautes Leistungshalbleitermodul
DE10333328B3 (de) * 2003-07-23 2005-01-27 Semikron Elektronik Gmbh Leistungshalbleitermodul in skalierbarer Aufbautechnik
JP4239723B2 (ja) 2003-07-24 2009-03-18 トヨタ自動車株式会社 発電電動装置を備える駆動システムおよび発電電動装置の制御をコンピュータに実行させるためのプログラムを記録したコンピュータ読取り可能な記録媒体
DE102004046807B4 (de) * 2004-09-27 2010-08-12 Infineon Technologies Ag Verfahren zur Herstellung eines Kunststoff-Gehäuseteils für ein Leistungshalbleitermodul
DE102004047752B3 (de) * 2004-09-30 2006-01-26 Infineon Technologies Ag Halbleiterbauteil mit Temperatursensor
DE102007052630B4 (de) * 2007-11-05 2019-08-14 Infineon Technologies Ag Leistungshalbleitermodul mit Temperatursensor
US7988354B2 (en) * 2007-12-26 2011-08-02 Infineon Technologies Ag Temperature detection for a semiconductor component
US8155916B2 (en) 2008-07-07 2012-04-10 Infineon Technologies Ag Semiconductor component and method of determining temperature
DE102010050315C5 (de) * 2010-11-05 2014-12-04 Danfoss Silicon Power Gmbh Verfahren zur Herstellung von gesinterten, elektrischen Baugruppen und damit hergestellte Leistungshalbleitermodule
EP4068349B1 (de) * 2021-03-30 2023-09-20 Siemens Aktiengesellschaft Leistungsmodul

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721746A (en) * 1971-10-01 1973-03-20 Motorola Inc Shielding techniques for r.f. circuitry
JPS6139561A (ja) * 1984-07-31 1986-02-25 Matsushita Electric Ind Co Ltd 混成パワ−トランジスタ保護装置
US4600968A (en) * 1984-11-13 1986-07-15 Fuji Electric Co., Ltd. Semiconductor device package having regions of different thermal properties
EP0547877A2 (de) * 1991-12-16 1993-06-23 Mitsubishi Denki Kabushiki Kaisha Halbleiterleistungsmodul
EP0633609A2 (de) * 1993-07-05 1995-01-11 Mitsubishi Denki Kabushiki Kaisha Zusammengesetzte Leiterplatte und Herstellungsmethode dafür
US5761039A (en) * 1995-06-19 1998-06-02 Hella Kg Hueck & Co. Electrical load switch for a motor vehicle
US6053049A (en) * 1997-05-30 2000-04-25 Motorola Inc. Electrical device having atmospheric isolation
DE19920505A1 (de) * 1999-05-05 2000-11-16 Semikron Elektronik Gmbh Umrichter mit Temperatursymmetrierung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
DE9007459U1 (de) * 1990-06-12 1991-10-24 Diskus Werke Frankfurt am Main Aktiengesellschaft, 6000 Frankfurt Feinbearbeitungsmaschine zum Umfangsrundschleifen
DE9007439U1 (de) 1990-06-29 1991-11-14 IXYS Semiconductor GmbH, 68623 Lampertheim Leistungshalbleitermodul mit integrierter Ansteuerungs- und Fehlerschutzplatine
JPH07161925A (ja) * 1993-12-09 1995-06-23 Mitsubishi Electric Corp パワーモジュール
DE19630902B4 (de) * 1996-08-01 2005-07-14 Ixys Semiconductor Gmbh Einrichtung zur Temperaturüberwachung in einer leistungselektronischen Anordnung
DE19700963C2 (de) * 1997-01-14 2000-12-21 Telefunken Microelectron Verfahren zur Herstellung eines Leistungsmoduls mit einer aktive Halbleiterbauelemente und passive Halbleiterbauelemente aufweisenden Schaltungsanordnung

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721746A (en) * 1971-10-01 1973-03-20 Motorola Inc Shielding techniques for r.f. circuitry
JPS6139561A (ja) * 1984-07-31 1986-02-25 Matsushita Electric Ind Co Ltd 混成パワ−トランジスタ保護装置
US4600968A (en) * 1984-11-13 1986-07-15 Fuji Electric Co., Ltd. Semiconductor device package having regions of different thermal properties
EP0547877A2 (de) * 1991-12-16 1993-06-23 Mitsubishi Denki Kabushiki Kaisha Halbleiterleistungsmodul
EP0633609A2 (de) * 1993-07-05 1995-01-11 Mitsubishi Denki Kabushiki Kaisha Zusammengesetzte Leiterplatte und Herstellungsmethode dafür
US5761039A (en) * 1995-06-19 1998-06-02 Hella Kg Hueck & Co. Electrical load switch for a motor vehicle
US6053049A (en) * 1997-05-30 2000-04-25 Motorola Inc. Electrical device having atmospheric isolation
DE19920505A1 (de) * 1999-05-05 2000-11-16 Semikron Elektronik Gmbh Umrichter mit Temperatursymmetrierung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 192 (E - 417) 5 July 1986 (1986-07-05) *

Also Published As

Publication number Publication date
DE10024516A1 (de) 2001-11-29
CN1498422A (zh) 2004-05-19
CN100388486C (zh) 2008-05-14
DE10024516B4 (de) 2006-03-09
US6835994B2 (en) 2004-12-28
US20030085423A1 (en) 2003-05-08
WO2001088983A2 (de) 2001-11-22

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