WO2003067646A3 - Halbleitersubstrat mit einem elektrisch isolierten bereich, insbesondere zur vertikalintegration - Google Patents
Halbleitersubstrat mit einem elektrisch isolierten bereich, insbesondere zur vertikalintegration Download PDFInfo
- Publication number
- WO2003067646A3 WO2003067646A3 PCT/DE2002/004411 DE0204411W WO03067646A3 WO 2003067646 A3 WO2003067646 A3 WO 2003067646A3 DE 0204411 W DE0204411 W DE 0204411W WO 03067646 A3 WO03067646 A3 WO 03067646A3
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- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor substrate
- electrically isolated
- chip
- vertical integration
- substrate
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Abstract
Es wird ein Halbleitersubstrat (1) mit mindestens einer auf dessen Vorderseite (20) verlaufenden ersten Leiterbahn (3) vorgeschlagen, wobei aus dem Halbleitersubstrat (1) mittels mindestens eines Isolationsgrabens (8) mindestens ein gegenüber dem übrigen Halbleitersubstrat (1) elektrisch isolierter, zumindest im Wesentlichen aus dem Halbleitermaterial bestehender Bereich (9) herausstrukturiert ist, über den die erste Leiterbahn (3) von der Rückseite (30) des Halbleitersubstrates (1) elektrisch kontaktierbar ist. Das vorgeschlagene Halbleitersubstrat (1) eignet sich insbesondere zur vertikalen Integration von integrierten Schaltungen (2) mit einem weiteren, auf dem Halbleitersubstrat (1) angebrachten Chip, integrierten Schaltkreis, Sensorelement, Speicherelement oder einer aktiven ASIC-Baugruppe, beispielsweise über eine sogenannte Flip-Chip Chip-to-Chip Montage.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10205026.0 | 2002-02-07 | ||
DE10205026A DE10205026C1 (de) | 2002-02-07 | 2002-02-07 | Halbleitersubstrat mit einem elektrisch isolierten Bereich, insbesondere zur Vertikalintegration |
Publications (2)
Publication Number | Publication Date |
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WO2003067646A2 WO2003067646A2 (de) | 2003-08-14 |
WO2003067646A3 true WO2003067646A3 (de) | 2004-01-22 |
Family
ID=7713746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/DE2002/004411 WO2003067646A2 (de) | 2002-02-07 | 2002-12-02 | Halbleitersubstrat mit einem elektrisch isolierten bereich, insbesondere zur vertikalintegration |
Country Status (2)
Country | Link |
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DE (1) | DE10205026C1 (de) |
WO (1) | WO2003067646A2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
US7083425B2 (en) | 2004-08-27 | 2006-08-01 | Micron Technology, Inc. | Slanted vias for electrical circuits on circuit boards and other substrates |
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- 2002-02-07 DE DE10205026A patent/DE10205026C1/de not_active Expired - Fee Related
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DE10205026C1 (de) | 2003-05-28 |
WO2003067646A2 (de) | 2003-08-14 |
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