CN1819166A - 封装结构 - Google Patents
封装结构 Download PDFInfo
- Publication number
- CN1819166A CN1819166A CNA2006100004027A CN200610000402A CN1819166A CN 1819166 A CN1819166 A CN 1819166A CN A2006100004027 A CNA2006100004027 A CN A2006100004027A CN 200610000402 A CN200610000402 A CN 200610000402A CN 1819166 A CN1819166 A CN 1819166A
- Authority
- CN
- China
- Prior art keywords
- wafer
- electrode
- encapsulating structure
- contact
- cover plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000011521 glass Substances 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 238000012856 packing Methods 0.000 claims description 16
- 239000000084 colloidal system Substances 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 239000000565 sealant Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 116
- 238000000034 method Methods 0.000 description 24
- 238000005520 cutting process Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 208000034189 Sclerosis Diseases 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Wire Bonding (AREA)
Abstract
本发明提供一种封装结构。上述封装结构包含:一基板,具有一接点;一晶片于上述基板上,上述晶片具有一主动表面,上述主动表面具有一中心区与一周边区,上述周边区上具有一电极;一图形化的盖板于上述晶片上,并曝露上述电极;一导体材料电性连接上述接点与上述电极;以及一封装胶体覆盖上述接点、上述导体材料、与上述电极,而曝露出位于上述晶片的中心区上的上述盖板。本发明所述封装结构可减少封装尺寸、配线复杂度、与晶片受污染的程度,从而减少成本,并提升良率与产品可靠度。
Description
技术领域
本发明是关于一种电子装置及其制造方法,特别是关于一种封装结构及其制造方法。
背景技术
半导体晶片例如具影像撷取功能的晶片,其封装方法通常将其固定在一特定的晶片承载器中被一坝状结构(dam)所围绕的区域,再于上述晶片及晶片承载器之间形成电性连结,然后在上述坝状结构上形成一玻璃板,使上述玻璃板覆于上述晶片的上方。上述具坝状结构的晶片承载器是专为封装具影像撷取功能的晶片而设计并制造的,其封装结构包含上述坝状结构、上述玻璃板、于上述坝状结构与玻璃板之间的一粘着层、与上述晶片与玻璃板之间的空气。上述制程非常地复杂,制造成本高且产品可靠度低。另外,上述坝状结构与玻璃板的介面并不一定能达成完全密封的状态,而必须要作破坏性的密封性试验来加以确认,更增加了制造成本并对产出有不良影响。另外,在形成上述玻璃板之前,上述晶片会有很长一段时间曝露在大气中,而造成上述晶片上会发生微粒污染或其他型式的污染。
请参考图6,在SHELLCASE公司所发表的一晶片尺寸封装(chip scale package;CSP)中,具有一影像传感器(imagesensor)602的晶片601是层叠于一上玻璃板650与一下玻璃板610之间,且完全为环氧树脂611与612所封装。该CSP的封装结构虽简单,但其布线系统却相当复杂,如下一段内容所述。
首先,一配线604由晶片601的接触垫603延伸至晶片601的边缘处,再将晶片601与上玻璃板650、下玻璃板610层叠在一起。接下来,切割或蚀刻下玻璃板610与晶片601以将晶片601自一晶圆(未绘示)分离出来,并曝露配线604的一端点;然后沿着晶片601与下玻璃板610的侧壁,将配线604延伸至下玻璃板610的下表面;之后再于下玻璃板610的下表面上的焊垫613形成软焊料凸块614。上述布线系统的走线相当复杂,且位于晶片601的边缘处、与下玻璃板610的下表面的边缘处的配线604容易发生剥离的情形,对其制造成本与良率皆有不良影响。
发明内容
有鉴于此,本发明的主要目的是提供一种封装结构及其制造方法,可减少结构上与布线系统的复杂度,而减少制造成本,并提升制程良率与可靠度。
为达成上述目的,本发明是提供一种封装结构,包含:一基板,具有一接点;一晶片于上述基板上,上述晶片具有一主动表面,上述主动表面具有一中心区与一周边区,上述周边区上具有一电极;一图形化的盖板于上述晶片上,并曝露上述电极;一导体材料电性连接上述接点与上述电极;以及一封装胶体覆盖上述接点、上述导体材料、与上述电极,而曝露出位于上述晶片的中心区上的上述盖板。
本发明所述的封装结构,更包含一粘着层于该晶片与该盖板之间。
本发明所述的封装结构,该导体材料包含适用于焊线接合的焊线、或适用于卷带式自动接合(tape automatic bonding;TAB)的接合物(lead)。
本发明是又提供一种封装结构,包含:一基板,具有一接点;一晶片于上述基板上,上述晶片具有一主动表面,上述主动表面具有一中心区与一周边区,上述周边区上具有一电极;一图形化的透明板于上述晶片上,并曝露上述电极;一导体材料电性连接上述接点与上述电极;以及一封装胶体覆盖上述接点、上述导体材料、与上述电极,而曝露出位于上述晶片的中心区上的上述透明板。
本发明所述的封装结构,该晶片的中心区更包含一影像传感器。
本发明所述的封装结构,更包含一透明的粘着层于该晶片与该透明板之间。
本发明所述的封装结构,该透明板包含玻璃。
本发明所述的封装结构,该导体材料包含适用于焊线接合的焊线、或适用于TAB的接合物。
本发明是又提供一种封装结构的制造方法,包含:提供一晶圆,具有多个晶片,上述晶片分别包含一主动表面,上述各主动表面分别包含一中心区与一周边区,上述周边区上分别具有一电极;形成一图形化的盖板于上述晶圆上,曝露上述电极;将上述基板分离成多个独立的晶片;提供一基板,具有一接点;将至少一个晶片粘着于上述基板上;使上述电极与上述接点电性连接;以及形成一封装胶体覆盖上述接点、上述导体材料、与上述电极,而曝露出位于上述晶片的中心区上的上述盖板。
本发明所述封装结构可减少封装尺寸、配线复杂度、与晶片受污染的程度,从而减少成本,并提升良率与产品可靠度。
附图说明
图1为一剖面图,是显示本发明第一实施例的封装结构;
图2为一剖面图,是显示本发明第二实施例的封装结构;
图3A至图3F为一系列的剖面图,是显示制造上述封装结构的一范例流程的共通部分;
图4A至图4B为一系列的剖面图,是显示制造本发明第一实施例的封装结构的一范例流程;
图5A至图5B为一系列的剖面图,是显示制造本发明第二实施例的封装结构的一范例流程;
图6为一剖面图,是显示SHELLCASE公司所发表的一晶片尺寸封装(chip scale package;CSP)。
具体实施方式
为了让本发明的上述和其他目的、特征和优点能更明显易懂,下文特举一(些)较佳实施例,并配合所附图示,作详细说明如下:
图1为一剖面图,是显示本发明第一实施例的封装结构。本发明的封装结构包含一基板200、一晶片101、一图形化的盖板110、一导体材料220、与一封装胶体240。
基板200视需要可以择自印刷电路板或导线架。封装基板200具有一晶片粘着区202与一接点201,接点201是位于晶片粘着区202以外的区域。
晶片101是置于基板200的晶片粘着区202上。一粘着层210,例如为可含银微粒或不含银微粒的热固性环氧树脂,通常形成于基板200与晶片101之间,以使晶片101固定于其上。晶片101具有一主动表面105,主动表面105具有一中心区105a与一周边区105b。周边区105b上具有一电极103。晶片101可更包含一影像传感器102于中心区105a,以使其用于数字相机或其他光学产品中,用来撷取影像。
图形化的盖板110是置于晶片101上,并暴露上述电极103。一选择性的(optional)粘着层111例如热固性的树脂,通常置于晶片101与盖板110之间,以将盖板110固定于晶片101上。当晶片101为具影像撷取功能的晶片时,盖板110则为透明的材质例如玻璃,以使晶片101得以撷取影像,而此时,选择性的粘着层111也必须为透明材质例如环氧树脂。当晶片101不具有影像传感器102时,盖板110可以是任何已知的材料,而较好为封胶材料或具导热性的材料,且亦可以使用玻璃或其他透明的材料。
导体材料220是电性连接接点201与电极103。在本实施例中,导体材料220为焊线接合技术所使用的金线或铝线。导体材料220视需要也可以改用其他已知的合金成分。
封装胶体240覆盖接点201、导体材料220、与电极103,而曝露出位于晶片101的中心区105a上的盖板110。封装胶体240例如为热固性环氧树脂与二氧化硅填充物的混合物,其形成可以使用封胶或点胶的制程,可使本发明的封装结构内,实质上不会有气体的存在。当晶片101为具影像撷取功能的晶片时,暴露的盖板110可提供影像传感器102所需要的视野(field of view)。当晶片101不是具影像撷取功能的晶片时,暴露的盖板110可连接至其他的装置例如散热器,以帮助本发明的封装结构的散热。
图2为一剖面图,是显示本发明第二实施例的封装结构。
与图1所示比较,在本实施例中,晶片101的电极103与基板200的接点201之间的电性连结是通过导体材料230来达成,其为适用于TAB技术的导体接合物。导体材料230是延伸自接点201,而具有一延伸端点231。一导体凸块232是电性连接电极103与导体材料230,而达成电极103与接点201之间的电性连结。另外,封装胶体240是覆盖接点201、导体材料230、与电极103,而曝露出位于晶片101的中心区105a上的盖板110。
与现有技术相比较,晶片101是为盖板110与由封胶或点胶所形成的封胶体240所封装。因此,就不再需要特别设计而具有坝状结构的晶片承载器,只需要使用一般的基板200例如为印刷电路板或导线架就可以达成本发明的封装结构,而可以减少制程成本,并可以使本发明的封装结构内,实质上不会有气体的存在,而增加其产品可靠度。由封胶或点胶所形成的封胶体240,比传统的坝状结构-玻璃更具信赖性。因此,传统制程所需要的密封性试验就可减到最少,而可以降低成本并增加产出。另外,如前述,晶片101与基板200之间的电性连结是通过导体材料220或230来达成。因此,就不需要复杂的布线系统,而能够更加地增加本发明的封装结构的良率与产出,并且更降低其成本。
以下是揭露本发明的封装结构的制造方法。通过图3A至图3F加上图4A至图4B所绘示的步骤,可完成图1所绘示的封装结构;而通过图3A至图3F加上图5A至图5B所绘示的步骤,则可以完成图2所绘示的封装结构。
图3A至图3F所绘示的步骤主要是在描述本发明的盖板110的相关步骤。在本实施例中,本发明的封装结构中的各晶片101在固定于基板200之前,就已实质上被封装,而可以避免微粒或其他污染物对晶片101造成污染,而能够更增加制造时的良率。
在图3A中,首先是提供一晶圆100例如为半导体晶圆,其具有多个晶片101。各晶片101分别具有一主动面105,各主动面105分别具有一中心区105a与一周边区105b。各周边区105b分别具有一电极103,以使晶片101得以电性连接至一外部元件例如后续步骤中的封装基板。当晶片101为具影像撷取功能的晶片时,一影像传感器102是选择性地形成于中间区105a。晶圆100较好为在各晶片101之间具有多个切割道106,以利后续的分离步骤。
接下来的图3B至图3F是揭露形成图形化的盖板110的较佳步骤。请注意图3B至图3F所绘示的步骤是用于举例,不应用来限制本发明,本领域技术人员可以在不违反本发明精神的前提之下,以其他的步骤来完成图形化的盖板110的形成。
在图3B中,一盖板110是形成于晶圆100上。在形成盖板110之前,一选择性的粘着层111较好为先行形成于晶圆100上,以增进晶圆100与盖板110之间的粘着强度。当晶片101为具影像撷取功能的晶片时,粘着层111与盖板110较好为透明材质,以提供影像传感器102所需的视野。因此,粘着层111较好为包含透明的热固性环氧树脂;而盖板110较好为玻璃或其他透明材质。当晶片101不具有影像传感器102时,盖板110可以是任何已知的材料,而较好为封胶材料或具导热性的材料,且亦可以使用玻璃或其他透明的材料。
在图3C中,可施行一选择性的研磨步骤,将盖板110研磨至一既定厚度。
在图3D中,图形化盖板110与选择性的粘着层111,而形成开口112,分别暴露电极103。除了暴露的电极103之外,晶片101已实质上为盖板110所封装。盖板110与选择性的粘着层111的图形化是通过非等向性蚀刻、激光穿孔或其他可暴露电极103的方法来达成。
请参考图3E,当晶圆100在各晶片101之间具有切割道106时,图形化的盖板110较好为具有分别暴露切割道106的开口113,以简化后续晶圆分离的制程,并可避免在晶圆分离的过程中,对盖板110造成伤害。而其他的优点会在后续陆续提到。开口112与113的形成视需求可以在一次的图形化步骤中一起完成,或是以不同的步骤来完成。
在图3F中,绘示于图3D或图3E中的晶圆100被分离为多个独立的晶片101,其方法可以是例如切割等机械性的方法、例如非等向性蚀刻等化学性的方法、或是其他分离的方法。当晶圆100具有切割道106时,其分离可沿着切割道106来完成,而避免去伤害到晶片101。
在上述机械性的方法中,可使用旋转的金属刀或钻石刀在各晶片101之间、或沿着切割道106来切割晶圆100。如图3D所示,当切割道106仍然为盖板110所覆盖时,因切割所产生的盖板110的碎片有可能会对仍是在晶片101上的盖板110造成损伤。因此,切割道106较好为被暴露出来的状态如图3E所示。
当晶圆100使用化学性的方法来分离时,切割道106或各晶片101之间的区域是受到非等向性的蚀刻。如图3D所示,当切割道106仍然为盖板110所覆盖时,因为盖板110、粘着层111、与晶圆100分属不同材质,而可能需要不同的步骤对其作蚀刻,而会使分离的步骤复杂化。因此,切割道106较好为被暴露出来的状态如图3E所示,而在分离的步骤中仅需要蚀刻晶圆100。
接下来,在图4A中,是提供一基板200例如为印刷电路板或导线架,其具有一接点201。然后再通过一晶片粘着的步骤,将至少一晶片101粘着于基板200。封装基板200具有一晶片粘着区202与一接点201,接点201是位于晶片粘着区202以外的区域。在上述晶片粘着的步骤中,可先形成一粘着层210于晶片粘着区202,粘着层210例如为可含银微粒或不含银微粒的热固性环氧树脂然后再将晶片101粘着于粘着层210,并将粘着层210硬化,而将晶片101固定于基板200。
接下来在图4B中,是电性连接晶片101的电极103与基板200的接点201。电极103与接点201之间的电性连结可通过一导体材料220的形成来达成。导体材料220例如为金线或铝线,其形成例如是使用焊线技术。
最后,以例如封胶或点胶的方法,形成一封装胶体240,以覆盖接点201、导体材料220、与电极103,而曝露出位于晶片101的中心区105a上的盖板110。另外,可施行一封胶后烘烤(post moldcure)的步骤,使封装胶体240硬化。因此,完成了图1所示的封装结构。
图2所示的封装结构的制造,可通过将图5A与图5B所绘示的步骤,接续在图3F所绘示的步骤之后来完成。
与图4A相比较,图5A所绘示的基板200更具有一导体材料230,其为适用于TAB技术的导体接合物,延伸自接点201。导体材料230更具有一延伸端点231,且置于接点201以外的区域。而晶片101的粘着步骤则大体上与图4A所示相同,其叙述在此便予以省略。导体凸块232可以视需要预先形成于延伸端点231或电极103上皆可。
接下来,在图5B中,是施以一接合的步骤,通过导体凸块232而形成电极103与延伸端点231之间的电性连接,从而电性连接电极103与接点201。
最后,以例如封胶或点胶的方法,形成一封装胶体240,以覆盖接点201、导体材料230、与电极103,而曝露出位于晶片101的中心区105a上的盖板110。封装胶体240则可以是热固性环氧树脂与二氧化硅填充物的混合物。另外,可施行一封胶后烘烤(postmold cure)的步骤,使封装胶体240硬化。因此,完成了图2所示的封装结构。
如上所述,本发明的封装结构极其形成方法,可减少封装尺寸、配线复杂度、与晶片受污染的程度,而达成本发明的减少成本,并提升良率与产品可靠度。
以上所述仅为本发明较佳实施例,然其并非用以限定本发明的范围,任何熟悉本项技术的人员,在不脱离本发明的精神和范围内,可在此基础上做进一步的改进和变化,因此本发明的保护范围当以本申请的权利要求书所界定的范围为准。
附图中符号的简单说明如下:
100:晶圆
101、601:晶片
102:影像传感器
103:电极
105:主动表面
105a:中心区
105b:周边区
106:切割道
110:基板图形化的盖板
111:选择性的粘着层
112、113:开口
200:基板
201:接点
202:晶片粘着区
210:粘着层
220、230:导体材料
231:延伸端点
232:导体凸块
240:封装胶体
602:影像传感器
603:接触垫
604:配线
610:下玻璃板
611、612:环氧树脂
613:焊垫
614:软焊料凸块
650:上玻璃板
Claims (8)
1.一种封装结构,其特征在于,所述封装结构包含:
一基板,具有一接点;
一晶片于该基板上,该晶片具有一主动表面,该主动表面具有一中心区与一周边区,该周边区上具有一电极;
一图形化的盖板于该晶片上,并曝露该电极;
一导体材料电性连接该接点与该电极;以及
一封装胶体覆盖该接点、该导体材料与该电极,而曝露出位于该晶片的中心区上的该盖板。
2.根据权利要求1所述的封装结构,其特征在于,更包含一粘着层于该晶片与该盖板之间。
3.根据权利要求1所述的封装结构,其特征在于,该导体材料包含适用于焊线接合的焊线、或适用于卷带式自动接合的接合物。
4.一种封装结构,其特征在于,所述封装结构包含:
一基板,具有一接点;
一晶片于该基板上,该晶片具有一主动表面,该主动表面具有一中心区与一周边区,该周边区上具有一电极;
一图形化的透明板于该晶片上,并曝露该电极;
一导体材料电性连接该接点与该电极;以及
一封装胶体覆盖该接点、该导体材料、与该电极,而曝露出位于该晶片的中心区上的该透明板。
5.根据权利要求4所述的封装结构,其特征在于,该晶片的中心区更包含一影像传感器。
6.根据权利要求4所述的封装结构,其特征在于,更包含一透明的粘着层于该晶片与该透明板之间。
7.根据权利要求4所述的封装结构,其特征在于,该透明板包含玻璃。
8.根据权利要求4所述的封装结构,其特征在于,该导体材料包含适用于焊线接合的焊线、或适用于卷带式自动接合的接合物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/030,097 | 2005-01-07 | ||
US11/030,097 US7638887B2 (en) | 2005-01-07 | 2005-01-07 | Package structure and fabrication method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1819166A true CN1819166A (zh) | 2006-08-16 |
Family
ID=36695916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100004027A Pending CN1819166A (zh) | 2005-01-07 | 2006-01-05 | 封装结构 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7638887B2 (zh) |
JP (1) | JP4452235B2 (zh) |
CN (1) | CN1819166A (zh) |
TW (1) | TW200625475A (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101494174B (zh) * | 2008-01-25 | 2010-07-21 | 华晶科技股份有限公司 | 影像撷取模组及其形成方法 |
CN107039365A (zh) * | 2015-11-23 | 2017-08-11 | 精材科技股份有限公司 | 晶片封装体及其制造方法 |
CN109709654A (zh) * | 2019-02-27 | 2019-05-03 | 维沃移动通信有限公司 | 光学组件、光学组件的制作方法及终端设备 |
CN111524918A (zh) * | 2019-02-01 | 2020-08-11 | 中芯集成电路(宁波)有限公司 | 摄像组件及其封装方法、镜头模组、电子设备 |
CN112645273A (zh) * | 2019-10-11 | 2021-04-13 | 日月光半导体制造股份有限公司 | 半导体封装装置和其制造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7638887B2 (en) | 2005-01-07 | 2009-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and fabrication method thereof |
US8148808B2 (en) * | 2007-08-13 | 2012-04-03 | Lv Sensors, Inc. | Partitioning of electronic packages |
TWI430415B (zh) * | 2009-12-01 | 2014-03-11 | Xintec Inc | 晶片封裝體及其製造方法 |
KR101565519B1 (ko) * | 2014-04-29 | 2015-11-03 | (주) 윈팩 | 칩 오픈 몰딩 패키지의 제조방법 |
US10602039B2 (en) * | 2016-09-19 | 2020-03-24 | Microsoft Technology Licensing, Llc | Ultra-compact image sensor assembly for thin profile devices |
US11562969B2 (en) * | 2019-09-12 | 2023-01-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package including reinforced structure |
US11289396B2 (en) * | 2019-09-29 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensing component encapsulated by an encapsulation layer with a roughness surface having a hollow region |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0574867A (ja) | 1991-09-13 | 1993-03-26 | Nec Corp | Tabテープ |
DE19855307B4 (de) * | 1998-02-20 | 2005-09-29 | Dr. Johannes Heidenhain Gmbh | Abtasteinheit für eine optische Positionsmeßeinrichtung |
US6534340B1 (en) * | 1998-11-18 | 2003-03-18 | Analog Devices, Inc. | Cover cap for semiconductor wafer devices |
EP1041628A3 (en) | 1999-03-29 | 2008-05-28 | Interuniversitair Microelektronica Centrum Vzw | An image sensor ball grid array package and the fabrication thereof |
JP2000349202A (ja) | 1999-06-03 | 2000-12-15 | Hitachi Ltd | テープ基板およびそれを用いた半導体装置ならびにその製造方法 |
US6489178B2 (en) * | 2000-01-26 | 2002-12-03 | Texas Instruments Incorporated | Method of fabricating a molded package for micromechanical devices |
US7057273B2 (en) * | 2001-05-15 | 2006-06-06 | Gem Services, Inc. | Surface mount package |
EP1423713A1 (en) * | 2001-08-24 | 2004-06-02 | Honeywell International Inc. | Hermetically sealed silicon micro-machined electromechanical system (mems) device having diffused conductors |
TW535244B (en) * | 2002-04-19 | 2003-06-01 | Advanced Semiconductor Eng | Wafer level package method and package structure |
EP1357606A1 (en) * | 2002-04-22 | 2003-10-29 | Scientek Corporation | Image sensor semiconductor package |
US6900531B2 (en) | 2002-10-25 | 2005-05-31 | Freescale Semiconductor, Inc. | Image sensor device |
JP2004319530A (ja) * | 2003-02-28 | 2004-11-11 | Sanyo Electric Co Ltd | 光半導体装置およびその製造方法 |
US6995462B2 (en) * | 2003-09-17 | 2006-02-07 | Micron Technology, Inc. | Image sensor packages |
US20050095835A1 (en) * | 2003-09-26 | 2005-05-05 | Tessera, Inc. | Structure and method of making capped chips having vertical interconnects |
US7462936B2 (en) * | 2003-10-06 | 2008-12-09 | Tessera, Inc. | Formation of circuitry with modification of feature height |
US7262123B2 (en) * | 2004-07-29 | 2007-08-28 | Micron Technology, Inc. | Methods of forming wire bonds for semiconductor constructions |
US7638887B2 (en) | 2005-01-07 | 2009-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and fabrication method thereof |
US8227276B2 (en) * | 2009-05-19 | 2012-07-24 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
-
2005
- 2005-01-07 US US11/030,097 patent/US7638887B2/en not_active Expired - Fee Related
- 2005-05-18 TW TW094116089A patent/TW200625475A/zh unknown
- 2005-11-29 JP JP2005343636A patent/JP4452235B2/ja active Active
-
2006
- 2006-01-05 CN CNA2006100004027A patent/CN1819166A/zh active Pending
-
2009
- 2009-11-06 US US12/591,071 patent/US8685834B2/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101494174B (zh) * | 2008-01-25 | 2010-07-21 | 华晶科技股份有限公司 | 影像撷取模组及其形成方法 |
CN107039365A (zh) * | 2015-11-23 | 2017-08-11 | 精材科技股份有限公司 | 晶片封装体及其制造方法 |
CN111524918A (zh) * | 2019-02-01 | 2020-08-11 | 中芯集成电路(宁波)有限公司 | 摄像组件及其封装方法、镜头模组、电子设备 |
CN109709654A (zh) * | 2019-02-27 | 2019-05-03 | 维沃移动通信有限公司 | 光学组件、光学组件的制作方法及终端设备 |
CN112645273A (zh) * | 2019-10-11 | 2021-04-13 | 日月光半导体制造股份有限公司 | 半导体封装装置和其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4452235B2 (ja) | 2010-04-21 |
US8685834B2 (en) | 2014-04-01 |
JP2006190987A (ja) | 2006-07-20 |
US7638887B2 (en) | 2009-12-29 |
TW200625475A (en) | 2006-07-16 |
US20100068846A1 (en) | 2010-03-18 |
US20060163714A1 (en) | 2006-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1819166A (zh) | 封装结构 | |
CN1298034C (zh) | 半导体封装及其制造方法 | |
CN1266920C (zh) | 摄像机模块 | |
CN1183593C (zh) | 半导体装置 | |
CN1246899C (zh) | 半导体装置 | |
CN1633705A (zh) | 半导体装置及其制造方法 | |
CN1572718A (zh) | 半导体装置及其制造方法 | |
CN1783443A (zh) | 光装置及其制造方法、光模块、电路板以及电子设备 | |
CN1779951A (zh) | 半导体器件及其制造方法 | |
CN1106036C (zh) | 芯片型半导体装置的制造方法 | |
CN1777988A (zh) | 条带引线框和其制作方法以及在半导体包装中应用的方法 | |
CN1338779A (zh) | 半导体器件 | |
CN1648707A (zh) | 光学装置用模块和光学装置用模块的制造方法 | |
CN1471161A (zh) | 半导体器件及其制造方法 | |
CN1674277A (zh) | 电路装置 | |
CN1619787A (zh) | 半导体装置 | |
CN1492503A (zh) | 半导体封装及其制造方法 | |
CN1758431A (zh) | 晶背上具有整合散热座的晶圆级封装以及晶片的散热方法 | |
CN1826688A (zh) | 半导体器件的制造方法 | |
CN1241021C (zh) | 加速度传感器及其制造方法 | |
CN1925141A (zh) | 晶片封装结构 | |
CN1890789A (zh) | 封装元件的工艺和封装的元件 | |
CN1428868A (zh) | 光器件及其制造方法、光模件、电路基板以及电子机器 | |
CN1675766A (zh) | 电引线架的制造方法,表面安装的半导体器件的制造方法和引线架带 | |
CN100336217C (zh) | 树脂密封型半导体器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |