CN1536763A - 表面声波器件及其制造方法 - Google Patents
表面声波器件及其制造方法 Download PDFInfo
- Publication number
- CN1536763A CN1536763A CNA2004100342109A CN200410034210A CN1536763A CN 1536763 A CN1536763 A CN 1536763A CN A2004100342109 A CNA2004100342109 A CN A2004100342109A CN 200410034210 A CN200410034210 A CN 200410034210A CN 1536763 A CN1536763 A CN 1536763A
- Authority
- CN
- China
- Prior art keywords
- acoustic wave
- surface acoustic
- substrate
- wave device
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 116
- 238000000034 method Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 238000007789 sealing Methods 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000000203 mixture Substances 0.000 claims description 26
- 238000001994 activation Methods 0.000 claims description 24
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 238000005304 joining Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 238000005538 encapsulation Methods 0.000 description 20
- 239000010949 copper Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
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- 238000001020 plasma etching Methods 0.000 description 7
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- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
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- 239000004020 conductor Substances 0.000 description 2
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- WABPQHHGFIMREM-BJUDXGSMSA-N lead-206 Chemical compound [206Pb] WABPQHHGFIMREM-BJUDXGSMSA-N 0.000 description 2
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 208000002925 dental caries Diseases 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003104593A JP3913700B2 (ja) | 2003-04-08 | 2003-04-08 | 弾性表面波デバイス及びその製造方法 |
JP104593/2003 | 2003-04-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1536763A true CN1536763A (zh) | 2004-10-13 |
CN1536763B CN1536763B (zh) | 2011-05-04 |
Family
ID=33307910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100342109A Expired - Lifetime CN1536763B (zh) | 2003-04-08 | 2004-03-30 | 表面声波器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7274129B2 (zh) |
JP (1) | JP3913700B2 (zh) |
KR (1) | KR100638779B1 (zh) |
CN (1) | CN1536763B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111192832A (zh) * | 2020-01-09 | 2020-05-22 | 甬矽电子(宁波)股份有限公司 | 芯片封装方法和芯片封装结构 |
WO2021042346A1 (zh) * | 2019-09-05 | 2021-03-11 | 刘宇浩 | 一种多工装置 |
CN113302839A (zh) * | 2019-03-01 | 2021-08-24 | 株式会社村田制作所 | 高频模块以及通信装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3418373B2 (ja) * | 2000-10-24 | 2003-06-23 | エヌ・アール・エス・テクノロジー株式会社 | 弾性表面波装置及びその製造方法 |
JP2004228911A (ja) * | 2003-01-22 | 2004-08-12 | Tdk Corp | 分波器 |
CN101151802B (zh) * | 2005-04-01 | 2010-08-25 | 松下电器产业株式会社 | 弹性表面波装置及其制造方法 |
DE102005044216A1 (de) * | 2005-09-15 | 2007-03-29 | Smartrac Technology Ltd. | Chipmodul sowie Verfahren zur Herstellung eines Chipmoduls |
US7436270B2 (en) * | 2005-12-20 | 2008-10-14 | Delphi Technologies, Inc. | Structure and method for improving the reliability of surface mounted ceramic duplexers |
JP4535286B2 (ja) * | 2006-03-31 | 2010-09-01 | Tdk株式会社 | 弾性表面波素子および当該素子を備えた弾性表面波装置 |
JP5270349B2 (ja) * | 2006-08-25 | 2013-08-21 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
US8179022B2 (en) | 2006-09-30 | 2012-05-15 | Citizen Finetech Miyota Co., Ltd. | Piezoelectric device with improved separation between input-output terminals and external connecting terminals |
WO2011126000A1 (ja) | 2010-04-08 | 2011-10-13 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US9270251B2 (en) * | 2013-03-15 | 2016-02-23 | Adaptive Methods, Inc. | Carrier for mounting a piezoelectric device on a circuit board and method for mounting a piezoelectric device on a circuit board |
JP6509147B2 (ja) * | 2016-02-29 | 2019-05-08 | 太陽誘電株式会社 | 電子デバイス |
JP6315716B2 (ja) * | 2016-03-17 | 2018-04-25 | 太陽誘電株式会社 | 弾性波デバイス |
JP6245587B1 (ja) | 2016-10-28 | 2017-12-13 | 大学共同利用機関法人自然科学研究機構 | レーザー部品 |
JP7211082B2 (ja) * | 2018-12-28 | 2023-01-24 | セイコーエプソン株式会社 | 振動デバイスおよび振動モジュール |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5414137A (en) | 1977-07-05 | 1979-02-02 | Toshiba Corp | Elastic surface wave unit |
JPH02143836U (zh) | 1989-05-09 | 1990-12-06 | ||
JPH04170811A (ja) | 1990-11-05 | 1992-06-18 | Fujitsu Ltd | 弾性表面波デバイス |
US5438305A (en) * | 1991-08-12 | 1995-08-01 | Hitachi, Ltd. | High frequency module including a flexible substrate |
US5448014A (en) * | 1993-01-27 | 1995-09-05 | Trw Inc. | Mass simultaneous sealing and electrical connection of electronic devices |
JPH06268473A (ja) | 1993-03-16 | 1994-09-22 | Nippon Steel Corp | 高周波集積回路素子 |
JPH0722808A (ja) | 1993-06-30 | 1995-01-24 | Japan Radio Co Ltd | 複合フィルタ |
JP2998510B2 (ja) | 1993-09-13 | 2000-01-11 | 松下電器産業株式会社 | 電子部品とその製造方法 |
JPH0818390A (ja) | 1994-07-01 | 1996-01-19 | Kokusai Electric Co Ltd | 弾性表面波装置 |
JPH10303689A (ja) | 1997-04-25 | 1998-11-13 | Hitachi Media Electron:Kk | 弾性表面波装置ならびにその製造方法 |
JP3669463B2 (ja) * | 1997-08-05 | 2005-07-06 | Tdk株式会社 | 樹脂封止表面実装型電子部品 |
JP2001053088A (ja) | 1999-08-16 | 2001-02-23 | Pmt:Kk | リードフレームのレジンバリ除去方法 |
JP2001110946A (ja) | 1999-10-05 | 2001-04-20 | Toshiba Corp | 電子デバイスおよびその製造方法 |
JP2001196488A (ja) | 1999-10-26 | 2001-07-19 | Nec Corp | 電子部品装置及びその製造方法 |
JP2002141771A (ja) | 2000-08-21 | 2002-05-17 | Murata Mfg Co Ltd | 弾性表面波フィルタ装置 |
JP2002184960A (ja) | 2000-12-18 | 2002-06-28 | Shin Etsu Handotai Co Ltd | Soiウェーハの製造方法及びsoiウェーハ |
JP2002261581A (ja) | 2001-03-02 | 2002-09-13 | Tdk Corp | 高周波モジュール部品 |
JP2002330050A (ja) | 2001-05-07 | 2002-11-15 | Nrs Technology Kk | 中空樹脂モールド弾性表面波フィルタ |
US7034441B2 (en) * | 2002-11-13 | 2006-04-25 | Nihon Dempa Kogyo Co., Ltd | Surface mount crystal unit and surface mount crystal oscillator |
-
2003
- 2003-04-08 JP JP2003104593A patent/JP3913700B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-30 US US10/812,362 patent/US7274129B2/en active Active
- 2004-03-30 CN CN2004100342109A patent/CN1536763B/zh not_active Expired - Lifetime
- 2004-04-07 KR KR1020040023624A patent/KR100638779B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113302839A (zh) * | 2019-03-01 | 2021-08-24 | 株式会社村田制作所 | 高频模块以及通信装置 |
WO2021042346A1 (zh) * | 2019-09-05 | 2021-03-11 | 刘宇浩 | 一种多工装置 |
CN111192832A (zh) * | 2020-01-09 | 2020-05-22 | 甬矽电子(宁波)股份有限公司 | 芯片封装方法和芯片封装结构 |
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JP2004312474A (ja) | 2004-11-04 |
KR100638779B1 (ko) | 2006-10-30 |
JP3913700B2 (ja) | 2007-05-09 |
KR20040087904A (ko) | 2004-10-15 |
US20040217670A1 (en) | 2004-11-04 |
CN1536763B (zh) | 2011-05-04 |
US7274129B2 (en) | 2007-09-25 |
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