CN1617443A - 弹性边界波装置及其制造方法 - Google Patents
弹性边界波装置及其制造方法 Download PDFInfo
- Publication number
- CN1617443A CN1617443A CNA2004100904093A CN200410090409A CN1617443A CN 1617443 A CN1617443 A CN 1617443A CN A2004100904093 A CNA2004100904093 A CN A2004100904093A CN 200410090409 A CN200410090409 A CN 200410090409A CN 1617443 A CN1617443 A CN 1617443A
- Authority
- CN
- China
- Prior art keywords
- substrate
- dielectric film
- film
- wave device
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003382346 | 2003-11-12 | ||
JP2003382346A JP3894917B2 (ja) | 2003-11-12 | 2003-11-12 | 弾性境界波デバイス及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1617443A true CN1617443A (zh) | 2005-05-18 |
CN100508380C CN100508380C (zh) | 2009-07-01 |
Family
ID=34463751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100904093A Expired - Fee Related CN100508380C (zh) | 2003-11-12 | 2004-11-12 | 弹性边界波装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7224101B2 (zh) |
EP (1) | EP1538748A3 (zh) |
JP (1) | JP3894917B2 (zh) |
KR (1) | KR100593354B1 (zh) |
CN (1) | CN100508380C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1989692B (zh) * | 2005-05-20 | 2012-04-25 | 株式会社村田制作所 | 弹性边界波装置 |
CN101517893B (zh) * | 2006-09-25 | 2012-05-30 | 株式会社村田制作所 | 弹性边界波装置 |
CN101523720B (zh) * | 2006-10-12 | 2012-07-04 | 株式会社村田制作所 | 弹性边界波装置 |
CN101796725B (zh) * | 2007-11-19 | 2014-03-19 | 太阳诱电株式会社 | 弹性边界波器件以及使用该弹性边界波器件的通信器 |
CN103891138A (zh) * | 2011-09-30 | 2014-06-25 | 株式会社村田制作所 | 弹性波装置 |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004254291A (ja) * | 2003-01-27 | 2004-09-09 | Murata Mfg Co Ltd | 弾性表面波装置 |
CN1894850B (zh) * | 2003-12-16 | 2010-08-25 | 株式会社村田制作所 | 声界面波装置 |
DE102004045181B4 (de) * | 2004-09-17 | 2016-02-04 | Epcos Ag | SAW-Bauelement mit reduziertem Temperaturgang und Verfahren zur Herstellung |
JP2006279609A (ja) * | 2005-03-29 | 2006-10-12 | Fujitsu Media Device Kk | 弾性境界波素子、共振子およびラダー型フィルタ |
KR100638821B1 (ko) | 2005-05-19 | 2006-10-27 | 삼성전기주식회사 | 표면탄성파 소자 및 그 제조방법 |
US7619347B1 (en) | 2005-05-24 | 2009-11-17 | Rf Micro Devices, Inc. | Layer acoustic wave device and method of making the same |
JP2008235950A (ja) * | 2005-05-26 | 2008-10-02 | Murata Mfg Co Ltd | 弾性境界波装置 |
JPWO2007007475A1 (ja) * | 2005-07-13 | 2009-01-29 | 株式会社村田製作所 | 弾性波フィルタ装置 |
WO2007007462A1 (ja) * | 2005-07-14 | 2007-01-18 | Murata Manufacturing Co., Ltd. | 弾性境界波装置及びその製造方法 |
JP4001157B2 (ja) * | 2005-07-22 | 2007-10-31 | 株式会社村田製作所 | 弾性境界波装置 |
US20080292608A1 (en) * | 2005-11-07 | 2008-11-27 | Irm Llc | Compounds and Compositions as Ppar Modulators |
DE102005055870A1 (de) * | 2005-11-23 | 2007-05-24 | Epcos Ag | Elektroakustisches Bauelement |
DE102005055871A1 (de) * | 2005-11-23 | 2007-05-24 | Epcos Ag | Elektroakustisches Bauelement |
US7471171B2 (en) * | 2006-02-28 | 2008-12-30 | Fujitsu Media Devices Limited | Elastic boundary wave device, resonator, and filter |
ATE551777T1 (de) * | 2006-04-24 | 2012-04-15 | Murata Manufacturing Co | Elastische oberflächenwellenvorrichtung |
JP4715922B2 (ja) * | 2006-05-30 | 2011-07-06 | 株式会社村田製作所 | 弾性境界波装置 |
JP4943787B2 (ja) * | 2006-09-13 | 2012-05-30 | 太陽誘電株式会社 | 弾性波デバイス、共振器およびフィルタ |
WO2008038506A1 (fr) * | 2006-09-27 | 2008-04-03 | Murata Manufacturing Co., Ltd. | Dispositif d'onde acoustique limite |
US8490260B1 (en) | 2007-01-17 | 2013-07-23 | Rf Micro Devices, Inc. | Method of manufacturing SAW device substrates |
US7408286B1 (en) * | 2007-01-17 | 2008-08-05 | Rf Micro Devices, Inc. | Piezoelectric substrate for a saw device |
JP4793450B2 (ja) * | 2007-01-19 | 2011-10-12 | 株式会社村田製作所 | 弾性境界波装置の製造方法 |
JP4811516B2 (ja) * | 2007-03-06 | 2011-11-09 | 株式会社村田製作所 | 弾性境界波装置 |
DE102007012384A1 (de) * | 2007-03-14 | 2008-09-18 | Epcos Ag | Mit geführten akustischen Wellen arbeitendes Bauelement und Verfahren zur Herstellung des Bauelements |
DE102007012383B4 (de) | 2007-03-14 | 2011-12-29 | Epcos Ag | Mit geführten akustischen Volumenwellen arbeitendes Bauelement |
US8154171B2 (en) * | 2007-10-23 | 2012-04-10 | Panasonic Corporation | Boundary acoustic wave device |
JP4943462B2 (ja) * | 2009-02-27 | 2012-05-30 | 太陽誘電株式会社 | 弾性波デバイス、デュープレクサ、通信モジュール、通信装置、弾性波デバイスの製造方法 |
JPWO2010122993A1 (ja) * | 2009-04-22 | 2012-10-25 | 株式会社村田製作所 | 弾性境界波装置及びその製造方法 |
US8044553B2 (en) | 2010-02-22 | 2011-10-25 | Triquint Semiconductor, Inc. | Temperature compensated surface acoustic wave device and method having buried interdigital transducers for providing an improved insertion loss and quality factor |
US9275853B2 (en) * | 2013-07-29 | 2016-03-01 | Applied Materials, Inc. | Method of adjusting a transistor gate flat band voltage with addition of AL203 on nitrided silicon channel |
FR3042648B1 (fr) * | 2015-10-20 | 2018-09-07 | Soitec Silicon On Insulator | Dispositif a ondes acoustiques de surface et procede de fabrication associe |
WO2018155305A1 (ja) * | 2017-02-22 | 2018-08-30 | 株式会社村田製作所 | 弾性表面波素子 |
US11323089B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer |
US11323096B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with periodic etched holes |
US11509279B2 (en) | 2020-07-18 | 2022-11-22 | Resonant Inc. | Acoustic resonators and filters with reduced temperature coefficient of frequency |
US10911023B2 (en) | 2018-06-15 | 2021-02-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with etch-stop layer |
US11323090B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications |
US11206009B2 (en) | 2019-08-28 | 2021-12-21 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch |
US11146232B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with reduced spurious modes |
US20220116015A1 (en) | 2018-06-15 | 2022-04-14 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch |
US10790802B2 (en) | 2018-06-15 | 2020-09-29 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate |
US11996827B2 (en) | 2018-06-15 | 2024-05-28 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with periodic etched holes |
US11936358B2 (en) | 2020-11-11 | 2024-03-19 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with low thermal impedance |
US11323091B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with diaphragm support pedestals |
US11876498B2 (en) | 2018-06-15 | 2024-01-16 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method |
US11996822B2 (en) | 2018-06-15 | 2024-05-28 | Murata Manufacturing Co., Ltd. | Wide bandwidth time division duplex transceiver |
US11888463B2 (en) | 2018-06-15 | 2024-01-30 | Murata Manufacturing Co., Ltd. | Multi-port filter using transversely-excited film bulk acoustic resonators |
US12021496B2 (en) | 2020-08-31 | 2024-06-25 | Murata Manufacturing Co., Ltd. | Resonators with different membrane thicknesses on the same die |
US10826462B2 (en) | 2018-06-15 | 2020-11-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with molybdenum conductors |
US11909381B2 (en) | 2018-06-15 | 2024-02-20 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer |
US11901878B2 (en) | 2018-06-15 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer |
US11916539B2 (en) | 2020-02-28 | 2024-02-27 | Murata Manufacturing Co., Ltd. | Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators |
US11264966B2 (en) | 2018-06-15 | 2022-03-01 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack |
US11146238B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Film bulk acoustic resonator fabrication method |
US11996825B2 (en) | 2020-06-17 | 2024-05-28 | Murata Manufacturing Co., Ltd. | Filter using lithium niobate and rotated lithium tantalate transversely-excited film bulk acoustic resonators |
US11967945B2 (en) | 2018-06-15 | 2024-04-23 | Murata Manufacturing Co., Ltd. | Transversly-excited film bulk acoustic resonators and filters |
US11349452B2 (en) | 2018-06-15 | 2022-05-31 | Resonant Inc. | Transversely-excited film bulk acoustic filters with symmetric layout |
US10998882B2 (en) | 2018-06-15 | 2021-05-04 | Resonant Inc. | XBAR resonators with non-rectangular diaphragms |
JP2022524136A (ja) * | 2019-03-14 | 2022-04-27 | レゾナント インコーポレイテッド | ハーフラムダ誘電体層を有する横方向に励起されたフィルムバルク音響共振器 |
US11811391B2 (en) | 2020-05-04 | 2023-11-07 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with etched conductor patterns |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3435789B2 (ja) | 1993-03-15 | 2003-08-11 | 松下電器産業株式会社 | 表面弾性波素子 |
WO1996004713A1 (fr) * | 1994-08-05 | 1996-02-15 | Japan Energy Corporation | Dispositif a ondes acoustiques de surface et procede de production |
JPH09107264A (ja) * | 1995-10-11 | 1997-04-22 | Toyo Commun Equip Co Ltd | チャネル波局部閉じ込め型圧電振動子およびフィルタ |
US5838089A (en) * | 1997-02-18 | 1998-11-17 | Kobe Steel Usa Inc. | Acoustic wave devices on diamond with an interlayer |
CN100347953C (zh) * | 1997-05-08 | 2007-11-07 | 东芝株式会社 | 声界面波器件及其制造方法 |
JPH11340268A (ja) | 1998-05-28 | 1999-12-10 | Sony Corp | 半導体装置の製造方法 |
US6566983B2 (en) * | 2000-09-02 | 2003-05-20 | Lg Electronics Inc. | Saw filter using a carbon nanotube and method for manufacturing the same |
FR2837636B1 (fr) * | 2002-03-19 | 2004-09-24 | Thales Sa | Dispositif a ondes acoustiques d'interface en tantalate de lithium |
CN100576738C (zh) * | 2002-04-15 | 2009-12-30 | 松下电器产业株式会社 | 表面声波器件及利用其的移动通信设备和传感器 |
-
2003
- 2003-11-12 JP JP2003382346A patent/JP3894917B2/ja not_active Expired - Fee Related
-
2004
- 2004-11-08 EP EP20040256898 patent/EP1538748A3/en not_active Withdrawn
- 2004-11-10 US US10/984,836 patent/US7224101B2/en active Active
- 2004-11-11 KR KR20040092009A patent/KR100593354B1/ko not_active IP Right Cessation
- 2004-11-12 CN CNB2004100904093A patent/CN100508380C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1989692B (zh) * | 2005-05-20 | 2012-04-25 | 株式会社村田制作所 | 弹性边界波装置 |
CN101517893B (zh) * | 2006-09-25 | 2012-05-30 | 株式会社村田制作所 | 弹性边界波装置 |
CN101523720B (zh) * | 2006-10-12 | 2012-07-04 | 株式会社村田制作所 | 弹性边界波装置 |
CN101796725B (zh) * | 2007-11-19 | 2014-03-19 | 太阳诱电株式会社 | 弹性边界波器件以及使用该弹性边界波器件的通信器 |
CN103891138A (zh) * | 2011-09-30 | 2014-06-25 | 株式会社村田制作所 | 弹性波装置 |
CN103891138B (zh) * | 2011-09-30 | 2016-12-07 | 株式会社村田制作所 | 弹性波装置 |
Also Published As
Publication number | Publication date |
---|---|
JP3894917B2 (ja) | 2007-03-22 |
JP2005150915A (ja) | 2005-06-09 |
KR20050045913A (ko) | 2005-05-17 |
US20050099091A1 (en) | 2005-05-12 |
EP1538748A3 (en) | 2009-02-11 |
US7224101B2 (en) | 2007-05-29 |
CN100508380C (zh) | 2009-07-01 |
KR100593354B1 (ko) | 2006-06-28 |
EP1538748A2 (en) | 2005-06-08 |
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Legal Events
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: TAIYO YUDEN CO., LTD. Free format text: FORMER OWNER: FUJITSU LTD. |
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Effective date of registration: 20100804 Address after: Kanagawa Co-patentee after: Taiyo Yuden Co., Ltd. Patentee after: Fujitsu Media Devices Ltd Address before: Kanagawa Co-patentee before: Fujitsu Ltd. Patentee before: Fujitsu Media Devices Ltd |
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ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: TAIYO YUDEN CO., LTD. Owner name: TAIYO YUDEN CO., LTD. Free format text: FORMER OWNER: FUJITSU MEDIA DEVICES LTD Effective date: 20101201 |
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Effective date of registration: 20101201 Address after: Tokyo, Japan, Japan Patentee after: Taiyo Yuden Co., Ltd. Address before: Kanagawa Co-patentee before: Taiyo Yuden Co., Ltd. Patentee before: Fujitsu Media Devices Ltd |
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Granted publication date: 20090701 Termination date: 20101112 |