FR3042648B1 - Dispositif a ondes acoustiques de surface et procede de fabrication associe - Google Patents

Dispositif a ondes acoustiques de surface et procede de fabrication associe

Info

Publication number
FR3042648B1
FR3042648B1 FR1559992A FR1559992A FR3042648B1 FR 3042648 B1 FR3042648 B1 FR 3042648B1 FR 1559992 A FR1559992 A FR 1559992A FR 1559992 A FR1559992 A FR 1559992A FR 3042648 B1 FR3042648 B1 FR 3042648B1
Authority
FR
France
Prior art keywords
manufacturing
same
acoustic wave
surface acoustic
wave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1559992A
Other languages
English (en)
Other versions
FR3042648A1 (fr
Inventor
Pascal Guenard
Ionut Radu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1559992A priority Critical patent/FR3042648B1/fr
Priority to US15/769,684 priority patent/US11652464B2/en
Priority to PCT/FR2016/052673 priority patent/WO2017068268A1/fr
Publication of FR3042648A1 publication Critical patent/FR3042648A1/fr
Application granted granted Critical
Publication of FR3042648B1 publication Critical patent/FR3042648B1/fr
Priority to US18/302,878 priority patent/US20230253949A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02984—Protection measures against damaging
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/02—Forming enclosures or casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
FR1559992A 2015-10-20 2015-10-20 Dispositif a ondes acoustiques de surface et procede de fabrication associe Active FR3042648B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1559992A FR3042648B1 (fr) 2015-10-20 2015-10-20 Dispositif a ondes acoustiques de surface et procede de fabrication associe
US15/769,684 US11652464B2 (en) 2015-10-20 2016-10-17 Surface acoustic wave device and associated production method
PCT/FR2016/052673 WO2017068268A1 (fr) 2015-10-20 2016-10-17 Dispositif à ondes acoustiques de surface et procédé de fabrication associé
US18/302,878 US20230253949A1 (en) 2015-10-20 2023-04-19 Surface acoustic wave device and associated production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1559992A FR3042648B1 (fr) 2015-10-20 2015-10-20 Dispositif a ondes acoustiques de surface et procede de fabrication associe

Publications (2)

Publication Number Publication Date
FR3042648A1 FR3042648A1 (fr) 2017-04-21
FR3042648B1 true FR3042648B1 (fr) 2018-09-07

Family

ID=54848786

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1559992A Active FR3042648B1 (fr) 2015-10-20 2015-10-20 Dispositif a ondes acoustiques de surface et procede de fabrication associe

Country Status (3)

Country Link
US (2) US11652464B2 (fr)
FR (1) FR3042648B1 (fr)
WO (1) WO2017068268A1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220116015A1 (en) 2018-06-15 2022-04-14 Resonant Inc. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11929731B2 (en) 2018-02-18 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
US11323096B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator with periodic etched holes
US11206009B2 (en) 2019-08-28 2021-12-21 Resonant Inc. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US10911023B2 (en) 2018-06-15 2021-02-02 Resonant Inc. Transversely-excited film bulk acoustic resonator with etch-stop layer
US11323089B2 (en) * 2018-06-15 2022-05-03 Resonant Inc. Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
US11323090B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications
US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US11264966B2 (en) 2018-06-15 2022-03-01 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US11323091B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
US11967945B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd. Transversly-excited film bulk acoustic resonators and filters
US11146238B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Film bulk acoustic resonator fabrication method
US11349452B2 (en) 2018-06-15 2022-05-31 Resonant Inc. Transversely-excited film bulk acoustic filters with symmetric layout
US10998882B2 (en) 2018-06-15 2021-05-04 Resonant Inc. XBAR resonators with non-rectangular diaphragms
JP7178881B2 (ja) * 2018-11-16 2022-11-28 ＮＤＫ ＳＡＷ ｄｅｖｉｃｅｓ株式会社 弾性表面波素子
US11440051B2 (en) * 2020-02-26 2022-09-13 General Electric Company Capacitive micromachined ultrasonic transducer (CMUT) devices and methods of manufacturing
US11658639B2 (en) 2020-10-05 2023-05-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband
US11728784B2 (en) 2020-10-05 2023-08-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters
US11476834B2 (en) 2020-10-05 2022-10-18 Resonant Inc. Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors
US11405017B2 (en) 2020-10-05 2022-08-02 Resonant Inc. Acoustic matrix filters and radios using acoustic matrix filters
US11496113B2 (en) 2020-11-13 2022-11-08 Resonant Inc. XBAR devices with excess piezoelectric material removed
CN112448687B (zh) * 2020-11-23 2024-05-03 广东广纳芯科技有限公司 一种tc-saw滤波器制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69413280T2 (de) * 1993-03-15 1999-04-22 Matsushita Electric Ind Co Ltd Akustische Oberflächenwellenanordnung mit laminierter Struktur
US6822376B2 (en) * 2002-11-19 2004-11-23 General Electric Company Method for making electrical connection to ultrasonic transducer
JP3894917B2 (ja) * 2003-11-12 2007-03-22 富士通メディアデバイス株式会社 弾性境界波デバイス及びその製造方法
KR100850861B1 (ko) * 2004-01-19 2008-08-06 가부시키가이샤 무라타 세이사쿠쇼 탄성 경계파 장치
DE102005055870A1 (de) * 2005-11-23 2007-05-24 Epcos Ag Elektroakustisches Bauelement
DE102005055871A1 (de) * 2005-11-23 2007-05-24 Epcos Ag Elektroakustisches Bauelement
DE112007001259B4 (de) * 2006-05-30 2015-07-23 Murata Manufacturing Co., Ltd. Schallwellenvorrichtung
US8283835B2 (en) * 2010-04-30 2012-10-09 Epcos Ag Guided bulk acoustic wave device having reduced height and method for manufacturing
WO2015041153A1 (fr) * 2013-09-20 2015-03-26 株式会社村田製作所 Dispositif à onde élastique et son procédé de fabrication
WO2016185866A1 (fr) * 2015-05-18 2016-11-24 株式会社村田製作所 Dispositif à ondes acoustiques de surface, module à haute fréquence et procédé de fabrication de dispositif à ondes acoustiques de surface

Also Published As

Publication number Publication date
US20230253949A1 (en) 2023-08-10
US11652464B2 (en) 2023-05-16
FR3042648A1 (fr) 2017-04-21
WO2017068268A1 (fr) 2017-04-27
US20180309426A1 (en) 2018-10-25

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