WO2021042346A1 - 一种多工装置 - Google Patents

一种多工装置 Download PDF

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Publication number
WO2021042346A1
WO2021042346A1 PCT/CN2019/104603 CN2019104603W WO2021042346A1 WO 2021042346 A1 WO2021042346 A1 WO 2021042346A1 CN 2019104603 W CN2019104603 W CN 2019104603W WO 2021042346 A1 WO2021042346 A1 WO 2021042346A1
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Prior art keywords
resonance
devices
filter device
substrate
resonant
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PCT/CN2019/104603
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English (en)
French (fr)
Inventor
刘宇浩
Original Assignee
刘宇浩
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Application filed by 刘宇浩 filed Critical 刘宇浩
Priority to CN201980098515.0A priority Critical patent/CN114391225A/zh
Priority to PCT/CN2019/104603 priority patent/WO2021042346A1/zh
Publication of WO2021042346A1 publication Critical patent/WO2021042346A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter

Definitions

  • the present invention relates to the field of radio frequency technology. Specifically, the present invention relates to a multiplexing device.
  • the radio frequency (RF) front-end chips of wireless communication equipment include power amplifiers, antenna switches, radio frequency filters, multiplexers, and low noise amplifiers.
  • Multiplexers such as duplexers, triplexers, quadruplexers, etc., are used to enable the RF transmitter and receiver to share an antenna, and the transmitter and receiver are isolated, so that the RF signal can be transmitted and received. Simultaneously.
  • FIG. 1 is a schematic diagram of the structure of a duplexer 100.
  • the duplexer 100 includes a transmitting filter 101 and a receiving filter 103, and the transmitting filter 101 and the receiving filter 103 share an antenna 105.
  • the transmitting filter 101 includes a plurality of first resonators
  • the receiving filter 103 includes a plurality of second resonators, the base of the plurality of first resonators and the base of the plurality of second resonators
  • the substrate uses the same material, that is, the substrate of the transmitting filter 101 and the substrate of the receiving filter 103 use the same material.
  • FIG. 2 is a schematic diagram of the structure of a triplexer 200.
  • the triplexer 200 includes a transmitting filter 201, a transmitting filter 203, and a receiving filter 205.
  • the transmitting filter 201, the transmitting filter 203, and the receiving filter 205 share an antenna 207.
  • the base of the transmitting filter 201, the base of the transmitting filter 203 and the base of the receiving filter 205 are made of the same material.
  • the transmitting filter device will withstand high power during operation, so a filter device with better heat dissipation performance is required, and the receiving filter device does not need to withstand high power, but a filter device with lower radio frequency loss is required. Therefore, the base material of the same material used for the transmitting filter device and the receiving filter device cannot meet different requirements for the transmitting filter device and the receiving filter device at the same time.
  • the problem solved by the present invention is to provide a multiplexing device, the transmitting filter device of the multiplexing device has better heat dissipation performance, and the receiving filter device of the multiplexing device has lower radio frequency loss.
  • an embodiment of the present invention provides a multiplexing device, including: at least one first filter device for signal transmission, and at least one second filter device for signal reception, wherein the at least one first filter device is used for signal reception.
  • a filter device includes a first substrate, and the at least one second filter device includes a second substrate. Wherein, the first substrate and the second substrate are different.
  • the material of the first substrate includes, but is not limited to, a high thermal conductivity material.
  • the high thermal conductivity material includes but is not limited to at least one of the following: silicon, silicon carbide, graphene.
  • the material of the second substrate includes, but is not limited to, a material with low radio frequency loss.
  • the low radio frequency loss material includes but is not limited to at least one of the following: glass, sapphire, spinel.
  • each of the at least one first filtering device includes a plurality of first resonant devices, wherein the plurality of first resonant devices includes the first substrate.
  • the plurality of first resonance devices includes at least one of the following: Surface Acoustic Wave (SAW) resonance device, Bulk Acoustic Wave (BAW) resonance device, Micro-Electro-Mechanical System (Micro-Electro-Mechanical System) Electro-Mechanical System, MEMS) resonance device, integrated passive device (IPD).
  • the plurality of first resonant devices are connected in series or in parallel.
  • each of the at least one second filtering device includes a plurality of second resonant devices, wherein the plurality of second resonant devices includes the second substrate.
  • the plurality of second resonance devices includes at least one of the following: Surface Acoustic Wave (SAW) resonance device, Bulk Acoustic Wave (BAW) resonance device, Micro-Electro-Mechanical System (Micro-Electro-Mechanical System) Electro-Mechanical System, MEMS) resonance device, integrated passive device (IPD).
  • the plurality of second resonant devices are connected in series or in parallel.
  • the first substrate of the at least one first filter device in the multiplexing device adopts a material with better heat dissipation performance
  • the second substrate of the at least one second filter device adopts a material with lower radio frequency loss. Material, so that different requirements for the at least one first filter device and the at least one second filter device can be met at the same time.
  • FIG. 1 is a schematic diagram of the structure of a duplexer 100
  • FIG. 2 is a schematic diagram of the structure of a triplexer 200
  • FIG. 3 is a schematic structural diagram of a duplex device 300 according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a transmission filtering device 400 according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a receiving filtering device 500 according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a triplex device 600 according to an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of a four-tool device 700 according to an embodiment of the present invention.
  • the transmitting filter device will withstand high power during operation, so a filter device with better heat dissipation performance is required, and the receiving filter device does not need to withstand high power, but a filter device with lower radio frequency loss is required. Therefore, the use of the same substrate for the transmitting filter device and the receiving filter device cannot satisfy different requirements for the transmitting filter device and the receiving filter device at the same time.
  • the inventor of the present invention found that the base of the transmitting filter device in the multiplexer uses a material with better heat dissipation performance, and the base of the receiving filter device uses a material with lower radio frequency loss, which can meet the requirements for both the transmitting filter device and the receiving filter device. Different needs.
  • FIG. 3 is a schematic structural diagram of a duplex device 300 according to an embodiment of the present invention.
  • the duplex device 300 includes: a transmitting and filtering device 301 for radio frequency signal transmission, and a receiving and filtering device 303 for radio frequency signal receiving.
  • the transmitting filter device 301 includes multiple first resonant devices
  • the receiving filter device 303 includes multiple second resonant devices.
  • the plurality of first resonant devices may be connected in series or in parallel, and the plurality of second resonant devices may be connected in series or in parallel.
  • the circuits of the transmitting filter device 301 and the receiving filter device 303 in this embodiment are only a specific embodiment, and the present invention is not limited by the specific embodiment. Those skilled in the art Other known circuits can also be applied to the transmitting filter device 301 or the receiving filter device 303.
  • the multiple first resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the multiple second resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the base material of the plurality of first resonant devices includes, but is not limited to, a material with high thermal conductivity.
  • the base material of the plurality of first resonant devices includes but is not limited to at least one of the following: silicon, silicon carbide, and graphene.
  • silicon, silicon carbide, and graphene are materials with high thermal conductivity and have good heat dissipation performance, so that the transmission filter device 301 has high power reliability.
  • the power reliability refers to the upper limit of power at which the filter device maintains normal operation, and the resonance device will not be damaged below the upper limit of power. The higher the power upper limit, the higher the power reliability.
  • the base material of the plurality of second resonant devices includes, but is not limited to, a material with low radio frequency loss.
  • the base material of the plurality of second resonance devices includes but is not limited to at least one of the following: glass, sapphire, and spinel. It should be noted that the RF loss of glass, sapphire, and spinel is relatively low, so that the requirement of the receiving filter device 303 for low RF loss can be met.
  • the base of the transmission filter device 301 in the duplex device 300 that is, the base of the plurality of first resonant devices included in the transmission filter device 301
  • the base of the reception filter device 303 That is, the substrates of the plurality of second resonance devices included in the receiving filter device 303 are made of different materials, so that different requirements for the transmitting filter device 301 and the receiving filter device 303 can be met at the same time.
  • An embodiment of the present invention provides a duplex device, including a transmission filter device 400 for radio frequency signal transmission, and a reception filter device 500 for radio frequency signal reception.
  • FIG. 4 shows a schematic diagram of the structure of the transmission filtering device 400.
  • the transmission filter device 400 includes: a resonance device 401, a resonance device 402, a resonance device 403, a resonance device 404, a resonance device 405, a resonance device 406, a resonance device 407, a resonance device 408, a resonance device 409, The radio frequency signal input terminal 411 and the radio frequency signal output terminal 413.
  • the radio frequency signal enters the transmission filtering device 400 from the radio frequency signal input terminal 411, and then the radio frequency signal passes through the resonance devices 401 to 409, and the finally filtered radio frequency signal is transmitted from the radio frequency signal output terminal. 413 is output to the antenna.
  • the resonance devices 401 to 409 include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonance device, Bulk Acoustic Wave (BAW) resonance device, Micro Electro Mechanical System (Micro Electro Mechanical System) -Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Micro Electro Mechanical System
  • IPD integrated passive device
  • each of the resonance devices 401 to 409 includes a silicon substrate. In another embodiment, each of the resonance devices 401 to 409 includes a silicon carbide substrate. In another embodiment, each of the resonance devices 401 to 409 includes a graphene substrate.
  • each of the resonance devices 401 to 405 includes a silicon substrate
  • each of the resonance devices 406 to 409 includes a silicon carbide substrate
  • each of the resonance devices 401, 403, 405, 407, and 409 includes a silicon substrate
  • each of the resonance devices 402, 404, 406, and 408 includes a silicon carbide substrate.
  • each of the resonance devices 401 to 405 includes a silicon substrate
  • each of the resonance devices 406 to 409 includes a graphene substrate
  • each of the resonance devices 401, 403, 405, 407, and 409 includes a silicon substrate
  • each of the resonance devices 402, 404, 406, and 408 includes a graphene substrate.
  • each of the resonance devices 401 to 405 includes a silicon carbide substrate
  • each of the resonance devices 406 to 409 includes a graphene substrate.
  • each of the resonance devices 401, 403, 405, 407, and 409 includes a silicon carbide substrate
  • each of the resonance devices 402, 404, 406, and 408 includes a graphene substrate.
  • the transmission filter device 400 has high power reliability.
  • the power reliability refers to the upper limit of power at which the filter device maintains normal operation, and the resonance device will not be damaged below the upper limit of power. The higher the power upper limit, the higher the power reliability.
  • FIG. 5 shows a schematic diagram of the structure of the receiving filtering device 500.
  • the receiving filter device 500 includes: a resonance device 501, a resonance device 502, a resonance device 503, a resonance device 504, a resonance device 505, a resonance device 506, a resonance device 507, a resonance device 508, a resonance device 509, The radio frequency signal input terminal 511 and the radio frequency signal output terminal 513.
  • the radio frequency signal received by the antenna is input to the receiving filtering device 500 from the radio frequency signal input terminal 511, and then the radio frequency signal passes through the resonator devices 501 to 509, and the finally filtered radio frequency signal is transmitted by the The radio frequency signal output terminal 513 outputs.
  • the resonance devices 501 to 509 include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonance device, Bulk Acoustic Wave (BAW) resonance device, Micro Electro Mechanical System (Micro Electro Mechanical System) -Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Micro Electro Mechanical System
  • IPD integrated passive device
  • each of the resonance devices 501 to 509 includes a glass substrate.
  • each of the resonator devices 501 to 509 includes a sapphire substrate.
  • each of the resonance devices 501 to 509 includes a spinel substrate.
  • each of the resonance devices 501 to 505 includes a glass substrate, and each of the resonance devices 506 to 509 includes a sapphire substrate.
  • each of the resonance devices 501, 503, 505, 507, and 509 includes a glass substrate, and each of the resonance devices 502, 504, 506, and 508 includes a sapphire substrate.
  • each of the resonance devices 501 to 505 includes a glass substrate
  • each of the resonance devices 506 to 509 includes a spinel substrate
  • each of the resonance devices 501, 503, 505, 507, and 509 includes a glass substrate
  • each of the resonance devices 502, 504, 506, and 508 includes a spinel substrate.
  • each of the resonance devices 501 to 505 includes a sapphire substrate
  • each of the resonance devices 506 to 509 includes a spinel substrate
  • each of the resonance devices 501, 503, 505, 507, and 509 includes a sapphire substrate
  • each of the resonance devices 502, 504, 506, and 508 includes a spinel substrate.
  • the RF loss of glass, sapphire, and spinel is relatively low, so that the requirement of the receiving filter device 500 for low RF loss can be met.
  • circuits of the transmitting filter device 400 and the receiving filter device 500 in this embodiment are only a specific embodiment, and the present invention is not limited by the specific embodiment. Those skilled in the art Other known circuits can also be applied to the transmitting filter device 400 or the receiving filter device 500.
  • the base of the transmitting filter device 400 ie, the base of the resonant devices 401 to 409 and the base of the receiving filter device 500 (ie, the base of the resonant devices 501 to 509) in the duplex device
  • the materials used for the substrate are different, so that different requirements for the transmitting filter device 400 and the receiving filter device 500 can be met at the same time.
  • FIG. 6 is a schematic structural diagram of a triplex device 600 according to an embodiment of the present invention.
  • the triplex device 600 includes: a transmission filtering device 601 for radio frequency signal transmission, a transmission filtering device 603 for radio frequency signal transmission, and a reception filtering device 605 for radio frequency signal reception.
  • the transmission filtering device 601 includes multiple first resonant devices
  • the transmission filtering device 603 includes multiple second resonant devices
  • the receiving filtering device 605 includes multiple third resonant devices.
  • the plurality of first resonance devices may be connected in series or parallel
  • the plurality of second resonance devices may be connected in series or parallel
  • the plurality of third resonance devices may be connected in series or parallel.
  • the circuits of the transmission filter device 601, the transmission filter device 603, and the reception filter device 605 in this embodiment are only a specific embodiment, and the present invention is not limited by the specific embodiment. As a limitation, other circuits known to those skilled in the art can also be applied to the transmission filtering device 601, or the transmission filtering device 603, or the reception filtering device 605.
  • the multiple first resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the multiple second resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the plurality of third resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the base material of the plurality of first resonant devices includes, but is not limited to, a material with high thermal conductivity.
  • the base material of the plurality of first resonant devices includes but is not limited to at least one of the following: silicon, silicon carbide, and graphene.
  • silicon, silicon carbide, and graphene are materials with high thermal conductivity and have good heat dissipation performance, so that the transmission filter device 601 has high power reliability.
  • the power reliability refers to the upper limit of power at which the filter device maintains normal operation, and the resonance device will not be damaged below the upper limit of power. The higher the power upper limit, the higher the power reliability.
  • the base material of the plurality of second resonant devices includes, but is not limited to, a material with high thermal conductivity.
  • the base material of the plurality of second resonance devices includes but is not limited to at least one of the following: silicon, silicon carbide, and graphene. It should be noted that silicon, silicon carbide, and graphene are highly thermally conductive materials with good heat dissipation performance, so that the transmission filter device 603 has high power reliability.
  • the power reliability refers to the upper limit of power at which the filter device maintains normal operation, and the resonance device will not be damaged below the upper limit of power. The higher the power upper limit, the higher the power reliability.
  • the base material of the plurality of third resonant devices includes, but is not limited to, a material with low radio frequency loss.
  • the base material of the plurality of third resonance devices includes but is not limited to at least one of the following: glass, sapphire, and spinel. It should be noted that the RF loss of glass, sapphire, and spinel is relatively low, so that the requirement of the receiving filter device 605 for low RF loss can be met.
  • the base material of the plurality of first resonant devices is the same as the base material of the plurality of second resonant devices.
  • the base material of the plurality of first resonant devices is silicon, and the base material of the plurality of second resonant devices is also silicon.
  • the base material of the plurality of first resonant devices and the base material of the plurality of second resonant devices may be different.
  • the base material of the plurality of first resonant devices is silicon
  • the base material of the plurality of second resonant devices is silicon carbide.
  • the base material of the plurality of first resonance devices includes silicon and graphene
  • the base material of the plurality of second resonance devices is silicon carbide.
  • the base material of the plurality of first resonance devices includes silicon and graphene
  • the base material of the plurality of second resonance devices includes silicon carbide and graphene.
  • the materials used for the base of the transmitting filter device (601 and 603) of the triplex device 600 and the base of the receiving filter device 605 are different, which can satisfy the requirements for the transmitting filter device (601 and 603) at the same time. It is different from the requirements of the receiving filtering device 605.
  • FIG. 7 is a schematic structural diagram of a four-tool device 700 according to an embodiment of the present invention.
  • the SiGong device 700 includes: a transmission filtering device 701 for radio frequency signal transmission and transmission filtering device 703, a radio frequency signal transmission and reception filtering device 705, for radio frequency signal reception and reception filtering
  • the device 707 is used for receiving radio frequency signals.
  • the transmission filtering device 701 includes multiple first resonant devices
  • the transmission filtering device 703 includes multiple second resonant devices
  • the receiving filtering device 705 includes multiple third resonant devices.
  • the filtering device 707 includes a plurality of fourth resonance devices.
  • the plurality of first resonance devices may be connected in series or parallel
  • the plurality of second resonance devices may be connected in series or parallel
  • the plurality of third resonance devices may be connected in series or parallel
  • the plurality of fourth resonance devices may be connected in series or in parallel.
  • the multiple first resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the multiple second resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the plurality of third resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the multiple fourth resonant devices include, but are not limited to, at least one of the following: Surface Acoustic Wave (SAW) resonator device, Bulk Acoustic Wave (BAW) resonator device, Microelectromechanical system ( Micro-Electro-Mechanical System, MEMS) resonant device, integrated passive device (Integrated Passive Device, IPD).
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • MEMS Microelectromechanical system
  • IPD integrated passive device
  • the base material of the plurality of first resonant devices includes, but is not limited to, a material with high thermal conductivity.
  • the base material of the plurality of first resonant devices includes but is not limited to at least one of the following: silicon, silicon carbide, and graphene.
  • silicon, silicon carbide, and graphene are materials with high thermal conductivity and have good heat dissipation performance, so that the transmission filter device 701 has high power reliability.
  • the power reliability refers to the upper limit of power at which the filter device maintains normal operation, and the resonance device will not be damaged below the upper limit of power. The higher the power upper limit, the higher the power reliability.
  • the base material of the plurality of second resonant devices includes, but is not limited to, a material with high thermal conductivity.
  • the base material of the plurality of second resonance devices includes but is not limited to at least one of the following: silicon, silicon carbide, and graphene.
  • silicon, silicon carbide, and graphene are materials with high thermal conductivity and have good heat dissipation performance, so that the transmission filter device 703 has high power reliability.
  • the power reliability refers to the upper limit of power at which the filter device maintains normal operation, and the resonance device will not be damaged below the upper limit of power. The higher the power upper limit, the higher the power reliability.
  • the base material of the plurality of third resonant devices includes, but is not limited to, a material with low radio frequency loss.
  • the base material of the plurality of third resonance devices includes but is not limited to at least one of the following: glass, sapphire, and spinel. It should be noted that the RF loss of glass, sapphire, and spinel is relatively low, so that the requirement of the receiving filter device 705 for low RF loss can be met.
  • the base material of the plurality of fourth resonance devices includes, but is not limited to, a material with low radio frequency loss.
  • the base material of the plurality of fourth resonance devices includes but is not limited to at least one of the following: glass, sapphire, and spinel. It should be noted that the RF loss of glass, sapphire, and spinel is relatively low, so that the requirement of the receiving filter device 707 for low RF loss can be met.
  • the base material of the plurality of first resonant devices is the same as the base material of the plurality of second resonant devices.
  • the base material of the plurality of first resonant devices is silicon, and the base material of the plurality of second resonant devices is also silicon.
  • the base material of the plurality of first resonant devices and the base material of the plurality of second resonant devices may be different.
  • the base material of the plurality of first resonance devices is graphene
  • the base material of the plurality of second resonance devices is silicon carbide.
  • the base material of the plurality of first resonance devices includes silicon and graphene
  • the base material of the plurality of second resonance devices is silicon carbide.
  • the base material of the plurality of first resonance devices includes silicon and graphene
  • the base material of the plurality of second resonance devices includes silicon carbide and graphene.
  • the base material of the plurality of third resonant devices is the same as the base material of the plurality of fourth resonant devices.
  • the base material of the plurality of third resonance devices is glass, and the base material of the plurality of fourth resonance devices is also glass.
  • the base material of the plurality of third resonance devices and the base material of the plurality of fourth resonance devices may be different.
  • the base material of the plurality of third resonance devices is sapphire, and the base material of the plurality of fourth resonance devices is also spinel.
  • the base material of the plurality of third resonance devices includes glass and sapphire, and the base material of the plurality of fourth resonance devices is spinel.
  • the base materials of the plurality of third resonance devices include glass and sapphire, and the base materials of the plurality of fourth resonance devices include glass and spinel.
  • the substrate of the transmitting filter device (701 and 703) and the substrate of the receiving filter device (705 and 707) in the SiGong device 700 are made of different materials, so that it can meet the requirements for the transmitting filter device at the same time. (701 and 703) and the different requirements of the receiving filtering device (705 and 707).
  • the base of the transmitting filter device in the multiplexer uses materials with better heat dissipation performance
  • the base of the receiving filter device uses materials with lower radio frequency loss, so that it can meet the different requirements of the transmitting filter device and the receiving filter device. demand.

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Abstract

一种多工装置(300,600,700)，包括：至少一个第一滤波装置(301,400,601,603,701,703)，用于信号发射，以及至少一个第二滤波装置(303,500,605,705,707)，用于信号接收，其中，至少一个第一滤波装置(301,400,601,603,701,703)包括第一基底，至少一个第二滤波装置(303,500,605,705,707)包括第二基底。多工装置(300,600,700)中的至少一个第一滤波装置(301,400,601,603,701,703)的第一基底采用散热性能较好的材料，至少一个第二滤波装置(303,500,605,705,707)的第二基底采用射频损耗较低的材料，从而可以同时满足对于至少一个第一滤波装置(301,400,601,603,701,703)和至少一个第二滤波装置(303,500,605,705,707)的不同需求。

Description

一种多工装置 技术领域
[0000]本发明涉及射频技术领域，具体而言，本发明涉及一种多工装置。
背景技术
无线通信设备的射频(Radio Frequency，RF)前端芯片包括功率放大器、天线开关、射频滤波器、多工器和低噪声放大器等。多工器，例如双工器、三工器、四工器等，用于使射频发射端和接收端可以共用一个天线，并且发射端和接收端相隔离，从而使射频信号的发射和接收能同时进行。
多工器包括至少一个发射滤波器和至少一个接收滤波器。图1是一种双工器100的结构示意图。所述双工器100包括发射滤波器101以及接收滤波器103，所述发射滤波器101和所述接收滤波器103共用天线105。其中，所述发射滤波器101包括多个第一谐振器，所述接收滤波器103包括多个第二谐振器，所述多个第一谐振器的基底和所述多个第二谐振器的基底采用相同的材料，即所述发射滤波器101的基底和所述接收滤波器103的基底采用相同的材料。
图2是一种三工器200的结构示意图。所述三工器200包括发射滤波器201、发射滤波器203、以及接收滤波器205，所述发射滤波器201、所述发射滤波器203及所述接收滤波器205共用天线207。其中，所述发射滤波器201的基底、所述发射滤波器203的基底及所述接收滤波器205的基底采用相同的材料。
需要说明的是，发射滤波装置在工作中会承受较大功率，所以需要散热性能较好的滤波装置，而接收滤波装置不需要承受较大功率，但需要射频损耗较低的滤波装置。因此，发射滤波装置和接收滤波装置采用相同材料的基底不能同时满足对于发射滤波装置和接收滤波装置的不同需求。
发明内容
本发明解决的问题是提供一种多工装置，所述多工装置的发射滤波装置具有较 好的散热性能，同时所述多工装置的接收滤波装置具有较低的射频损耗。
为解决上述问题，本发明实施例提供一种多工装置，包括：至少一个第一滤波装置，用于信号发射，以及至少一个第二滤波装置，用于信号接收，其中，所述至少一个第一滤波装置包括第一基底，所述至少一个第二滤波装置包括第二基底。其中，所述第一基底和所述第二基底是不同的。
在一些实施例中，所述第一基底的材料包括但不限于高导热材料。在一些实施例中，所述高导热材料包括但不限于以下至少之一：硅、碳化硅、石墨烯。
在一些实施例中，所述第二基底的材料包括但不限于低射频损耗材料。在一些实施例中，所述低射频损耗材料包括但不限于以下至少之一：玻璃、蓝宝石、尖晶石。
在一些实施例中，所述至少一个第一滤波装置中的每个包括多个第一谐振装置，其中，所述多个第一谐振装置包括所述第一基底。在一些实施例中，所述多个第一谐振装置包括以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。在一些实施例中，所述多个第一谐振装置为串联或并联的。
在一些实施例中，所述至少一个第二滤波装置中的每个包括多个第二谐振装置，其中，所述多个第二谐振装置包括所述第二基底。在一些实施例中，所述多个第二谐振装置包括以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。在一些实施例中，所述多个第二谐振装置为串联或并联的。
需要说明的是，所述多工装置中的所述至少一个第一滤波装置的第一基底采用散热性能较好的材料，所述至少一个第二滤波装置的第二基底采用射频损耗较低的材料，从而可以同时满足对于所述至少一个第一滤波装置和所述至少一个第二滤波装置的不同需求。
附图说明
图1是一种双工器100的结构示意图；
图2是一种三工器200的结构示意图；
图3是本发明实施例的一种双工装置300的结构示意图；
图4是本发明实施例的一种发射滤波装置400的结构示意图；
图5是本发明实施例的一种接收滤波装置500的结构示意图；
图6是本发明实施例的一种三工装置600的结构示意图；
图7是本发明实施例的一种四工装置700的结构示意图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明还可以采用其他不同于在此描述的其它方式来实施，因此本发明不受下面公开的具体实施例的限制。
如背景技术部分所述，发射滤波装置在工作中会承受较大功率，所以需要散热性能较好的滤波装置，而接收滤波装置不需要承受较大功率，但需要射频损耗较低的滤波装置。因此，发射滤波装置和接收滤波装置采用相同的基底不能同时满足对于发射滤波装置和接收滤波装置的不同需求。
本发明的发明人发现，多工装置中的发射滤波装置的基底采用散热性能较好的材料，接收滤波装置的基底采用射频损耗较低的材料，从而可以同时满足对于发射滤波装置和接收滤波装置的不同需求。
图3是本发明实施例的一种双工装置300的结构示意图。
如图3所示，所述双工装置300包括：发射滤波装置301，用于射频信号发射、以及接收滤波装置303，用于射频信号接收。
本实施例中，所述发射滤波装置301包括多个第一谐振装置，所述接收滤波装置303包括多个第二谐振装置。
本实施例中，所述多个第一谐振装置可以是串联或并联的，所述多个第二谐振装置可以是串联或并联的。需要说明的是，本实施例中的所述发射滤波装置301和所述接收滤波装置303的电路仅是一个具体实施例，本发明不受所述具体实施例的限制，所属技术领域的技术人员知晓的其他电路也可以应用于所述发射滤波装置301或所述接收 滤波装置303。
本实施例中，所述多个第一谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第二谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第一谐振装置的基底材料包括但不限于高导热材料。本实施例中，所述多个第一谐振装置的基底材料包括但不限于以下至少之一：硅、碳化硅、石墨烯。需要说明的是，硅、碳化硅、石墨烯为高导热材料，散热性能较好，从而使所述发射滤波装置301具有较高的功率可靠性。所述功率可靠性指滤波装置保持正常工作的功率上限，在所述功率上限以下谐振装置不会损坏。所述功率上限越高，所述功率可靠性越高。
本实施例中，所述多个第二谐振装置的基底材料包括但不限于低射频损耗材料。本实施例中，所述多个第二谐振装置的基底材料包括但不限于以下至少之一：玻璃、蓝宝石、尖晶石。需要说明的是，玻璃、蓝宝石、尖晶石的射频损耗较低，从而可以满足所述接收滤波装置303对低射频损耗的需求。
因此，所述双工装置300中的所述发射滤波装置301的基底(即，所述发射滤波装置301包括的所述多个第一谐振装置的基底)和所述接收滤波装置303的基底(即，所述接收滤波装置303包括的所述多个第二谐振装置的基底)采用的材料不同，从而可以同时满足对于所述发射滤波装置301和所述接收滤波装置303的不同需求。
本发明实施例提供一种双工装置，包括发射滤波装置400，用于射频信号发射、以及接收滤波装置500，用于射频信号接收。
图4示出了所述发射滤波装置400的结构示意图。
如图4所示，所述发射滤波装置400包括：谐振装置401、谐振装置402、谐振装置403、谐振装置404、谐振装置405、谐振装置406、谐振装置407、谐振装置408、谐振装置409、射频信号输入端411、以及射频信号输出端413。
需要说明的是，射频信号由所述射频信号输入端411进入所述发射滤波装置400，然后所述射频信号通过所述谐振装置401至409，最后经过滤波的射频信号由所述射频信号输出端413输出至天线。
本实施例中，所述谐振装置401至409包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述谐振装置401至409中的每一个包括硅基底。在另一个实施例中，所述谐振装置401至409中的每一个包括碳化硅基底。在另一个实施例中，所述谐振装置401至409中的每一个包括石墨烯基底。
在另一个实施例中，所述谐振装置401至405中的每一个包括硅基底，所述谐振装置406至409中的每一个包括碳化硅基底。在另一个实施例中，所述谐振装置401、403、405、407及409中的每一个包括硅基底，所述谐振装置402、404、406及408中的每一个包括碳化硅基底。
在另一个实施例中，所述谐振装置401至405中的每一个包括硅基底，所述谐振装置406至409中的每一个包括石墨烯基底。在另一个实施例中，所述谐振装置401、403、405、407及409中的每一个包括硅基底，所述谐振装置402、404、406及408中的每一个包括石墨烯基底。
在另一个实施例中，所述谐振装置401至405中的每一个包括碳化硅基底，所述谐振装置406至409中的每一个包括石墨烯基底。在另一个实施例中，所述谐振装置401、403、405、407及409中的每一个包括碳化硅基底，所述谐振装置402、404、406及408中的每一个包括石墨烯基底。
需要说明的是，硅、碳化硅、石墨烯为高导热材料，散热性能较好，从而使所述发射滤波装置400具有较高的功率可靠性。所述功率可靠性指滤波装置保持正常工作的功率上限，在所述功率上限以下谐振装置不会损坏。所述功率上限越高，所述功率可靠性越高。
图5示出了所述接收滤波装置500的结构示意图。
如图5所示，所述接收滤波装置500包括：谐振装置501、谐振装置502、谐振装置503、谐振装置504、谐振装置505、谐振装置506、谐振装置507、谐振装置508、谐振装置509、射频信号输入端511、以及射频信号输出端513。
需要说明的是，天线接收到的射频信号由所述射频信号输入端511输入所述接收滤波装置500，然后所述射频信号通过所述谐振装置501至509，最后经过滤波的射频信号由所述射频信号输出端513输出。
本实施例中，所述谐振装置501至509包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述谐振装置501至509中的每一个包括玻璃基底。在另一个实施例中，所述谐振装置501至509中的每一个包括蓝宝石基底。在另一个实施例中，所述谐振装置501至509中的每一个包括尖晶石基底。
在另一个实施例中，所述谐振装置501至505中的每一个包括玻璃基底，所述谐振装置506至509中的每一个包括蓝宝石基底。在另一个实施例中，所述谐振装置501、503、505、507及509中的每一个包括玻璃基底，所述谐振装置502、504、506及508中的每一个包括蓝宝石基底。
在另一个实施例中，所述谐振装置501至505中的每一个包括玻璃基底，所述谐振装置506至509中的每一个包括尖晶石基底。在另一个实施例中，所述谐振装置501、503、505、507及509中的每一个包括玻璃基底，所述谐振装置502、504、506及508中的每一个包括尖晶石基底。
在另一个实施例中，所述谐振装置501至505中的每一个包括蓝宝石基底，所述谐振装置506至509中的每一个包括尖晶石基底。在另一个实施例中，所述谐振装置501、503、505、507及509中的每一个包括蓝宝石基底，所述谐振装置502、504、506及508中的每一个包括尖晶石基底。
需要说明的是，玻璃、蓝宝石、尖晶石的射频损耗较低，从而可以满足所述接收滤波装置500对低射频损耗的需求。
需要说明的是，本实施例中的所述发射滤波装置400和所述接收滤波装置500的电路仅是一个具体实施例，本发明不受所述具体实施例的限制，所属技术领域的技术人员知晓的其他电路也可以应用于所述发射滤波装置400或所述接收滤波装置500。
因此，所述双工装置中的所述发射滤波装置400的基底(即，所述谐振装置401至409的基底)和所述接收滤波装置500的基底(即，所述谐振装置501至509的基底)采用的材料不同，从而可以同时满足对于所述发射滤波装置400和所述接收滤波装置 500的不同需求。
图6是本发明实施例的一种三工装置600的结构示意图。
如图6所示，所述三工装置600包括：发射滤波装置601，用于射频信号发射、发射滤波装置603，用于射频信号发射、以及接收滤波装置605，用于射频信号接收。
本实施例中，所述发射滤波装置601包括多个第一谐振装置，所述发射滤波装置603包括多个第二谐振装置，所述接收滤波装置605包括多个第三谐振装置。
本实施例中，所述多个第一谐振装置可以是串联或并联的，所述多个第二谐振装置可以是串联或并联的，所述多个第三谐振装置可以是串联或并联的。需要说明的是，本实施例中的所述发射滤波装置601、所述发射滤波装置603、以及所述接收滤波装置605的电路仅是一个具体实施例，本发明不受所述具体实施例的限制，所属技术领域的技术人员知晓的其他电路也可以应用于所述发射滤波装置601、或所述发射滤波装置603、或所述接收滤波装置605。
本实施例中，所述多个第一谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第二谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第三谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第一谐振装置的基底材料包括但不限于高导热材料。本实施例中，所述多个第一谐振装置的基底材料包括但不限于以下至少之一：硅、碳化硅、石墨烯。需要说明的是，硅、碳化硅、石墨烯为高导热材料，散热性能较好，从而使所述发射滤波装置601具有较高的功率可靠性。所述功率可靠性指滤波装置保持正常工作的功率上限，在所述功率上限以下谐振装置不会损坏。所述功率上限越高，所述功率可靠性越高。
本实施例中，所述多个第二谐振装置的基底材料包括但不限于高导热材料。本实施例中，所述多个第二谐振装置的基底材料包括但不限于以下至少之一：硅、碳化硅、石墨烯。需要说明的是，硅、碳化硅、石墨烯为高导热材料，散热性能较好，从而使所述发射滤波装置603具有较高的功率可靠性。所述功率可靠性指滤波装置保持正常工作的功率上限，在所述功率上限以下谐振装置不会损坏。所述功率上限越高，所述功率可靠性越高。
本实施例中，所述多个第三谐振装置的基底材料包括但不限于低射频损耗材料。本实施例中，所述多个第三谐振装置的基底材料包括但不限于以下至少之一：玻璃、蓝宝石、尖晶石。需要说明的是，玻璃、蓝宝石、尖晶石的射频损耗较低，从而可以满足所述接收滤波装置605对低射频损耗的需求。
本实施例中，所述多个第一谐振装置的基底材料与所述多个第二谐振装置的基底材料相同。在另一个实施例中，所述多个第一谐振装置的基底材料为硅，所述多个第二谐振装置的基底材料也为硅。
在另一个实施例中，所述多个第一谐振装置的基底材料与所述多个第二谐振装置的基底材料可以不同。在另一个实施例中，所述多个第一谐振装置的基底材料为硅，所述多个第二谐振装置的基底材料为碳化硅。在另一个实施例中，所述多个第一谐振装置的基底材料包括硅和石墨烯，所述多个第二谐振装置的基底材料为碳化硅。在另一个实施例中，所述多个第一谐振装置的基底材料包括硅和石墨烯，所述多个第二谐振装置的基底材料包括碳化硅和石墨烯。
因此，所述三工装置600的所述发射滤波装置(601及603)的基底和所述接收滤波装置605的基底采用的材料不同，从而可以同时满足对于所述发射滤波装置(601及603)和所述接收滤波装置605的不同需求。
图7是本发明实施例的一种四工装置700的结构示意图。
如图7所示，所述四工装置700包括：发射滤波装置701，用于射频信号发射、发射滤波装置703，用于射频信号发射、接收滤波装置705，用于射频信号接收、以及接收滤波装置707，用于射频信号接收。
本实施例中，所述发射滤波装置701包括多个第一谐振装置，所述发射滤波装置703包括多个第二谐振装置，所述接收滤波装置705包括多个第三谐振装置，所述接收滤波装置707包括多个第四谐振装置。
本实施例中，所述多个第一谐振装置可以是串联或并联的，所述多个第二谐振 装置可以是串联或并联的，所述多个第三谐振装置可以是串联或并联的，所述多个第四谐振装置可以是串联或并联的。需要说明的是，本实施例中的所述发射滤波装置701、所述发射滤波装置703、所述接收滤波装置705、以及所述接收滤波装置707的电路仅是一个具体实施例，本发明不受所述具体实施例的限制，所属技术领域的技术人员知晓的其他电路也可以应用于所述发射滤波装置701、或所述发射滤波装置703、或所述接收滤波装置705、或所述接收滤波装置707。
本实施例中，所述多个第一谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第二谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第三谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第四谐振装置包括但不限于以下至少之一：声表面(Surface Acoustic Wave，SAW)谐振装置、体声波(Bulk Acoustic Wave，BAW)谐振装置、微机电系统(Micro-Electro-Mechanical System，MEMS)谐振装置、集成无源器件(Integrated Passive Device，IPD)。
本实施例中，所述多个第一谐振装置的基底材料包括但不限于高导热材料。本实施例中，所述多个第一谐振装置的基底材料包括但不限于以下至少之一：硅、碳化硅、石墨烯。需要说明的是，硅、碳化硅、石墨烯为高导热材料，散热性能较好，从而使所述发射滤波装置701具有较高的功率可靠性。所述功率可靠性指滤波装置保持正常工作的功率上限，在所述功率上限以下谐振装置不会损坏。所述功率上限越高，所述功率可靠性越高。
本实施例中，所述多个第二谐振装置的基底材料包括但不限于高导热材料。本实施例中，所述多个第二谐振装置的基底材料包括但不限于以下至少之一：硅、碳化硅、 石墨烯。需要说明的是，硅、碳化硅、石墨烯为高导热材料，散热性能较好，从而使所述发射滤波装置703具有较高的功率可靠性。所述功率可靠性指滤波装置保持正常工作的功率上限，在所述功率上限以下谐振装置不会损坏。所述功率上限越高，所述功率可靠性越高。
本实施例中，所述多个第三谐振装置的基底材料包括但不限于低射频损耗材料。本实施例中，所述多个第三谐振装置的基底材料包括但不限于以下至少之一：玻璃、蓝宝石、尖晶石。需要说明的是，玻璃、蓝宝石、尖晶石的射频损耗较低，从而可以满足所述接收滤波装置705对低射频损耗的需求。
本实施例中，所述多个第四谐振装置的基底材料包括但不限于低射频损耗材料。本实施例中，所述多个第四谐振装置的基底材料包括但不限于以下至少之一：玻璃、蓝宝石、尖晶石。需要说明的是，玻璃、蓝宝石、尖晶石的射频损耗较低，从而可以满足所述接收滤波装置707对低射频损耗的需求。
本实施例中，所述多个第一谐振装置的基底材料与所述多个第二谐振装置的基底材料相同。在另一个实施例中，所述多个第一谐振装置的基底材料为硅，所述多个第二谐振装置的基底材料也为硅。
在另一个实施例中，所述多个第一谐振装置的基底材料与所述多个第二谐振装置的基底材料可以不同。在另一个实施例中，所述多个第一谐振装置的基底材料为石墨烯，所述多个第二谐振装置的基底材料为碳化硅。在另一个实施例中，所述多个第一谐振装置的基底材料包括硅和石墨烯，所述多个第二谐振装置的基底材料为碳化硅。在另一个实施例中，所述多个第一谐振装置的基底材料包括硅和石墨烯，所述多个第二谐振装置的基底材料包括碳化硅和石墨烯。
本实施例中，所述多个第三谐振装置的基底材料与所述多个第四谐振装置的基底材料相同。在另一个实施例中，所述多个第三谐振装置的基底材料为玻璃，所述多个第四谐振装置的基底材料也为玻璃。
在另一个实施例中，所述多个第三谐振装置的基底材料与所述多个第四谐振装置的基底材料可以不同。在另一个实施例中，所述多个第三谐振装置的基底材料为蓝宝石，所述多个第四谐振装置的基底材料也为尖晶石。在另一个实施例中，所述多个第三谐振装置的基底材料包括玻璃和蓝宝石，所述多个第四谐振装置的基底材料为尖晶石。在另一个实施例中，所述多个第三谐振装置的基底材料包括玻璃和蓝宝石，所述多个第四谐振装置的基底材料包括玻璃和尖晶石。
因此，所述四工装置700中的所述发射滤波装置(701及703)的基底和所述接收滤波装置(705及707)的基底采用的材料不同，从而可以同时满足对于所述发射滤波装置(701及703)和所述接收滤波装置(705及707)的不同需求。
综上所述，多工装置中的发射滤波装置的基底采用散热性能较好的材料，接收滤波装置的基底采用射频损耗较低的材料，从而可以同时满足对于发射滤波装置和接收滤波装置的不同需求。
应该理解，此处的例子和实施例仅是示例性的，本领域技术人员可以在不背离本申请和所附权利要求所限定的本发明的精神和范围的情况下，做出各种修改和更正。

Claims (11)

  1. 一种多工装置，其特征在于，包括：至少一个第一滤波装置，用于信号发射，以及至少一个第二滤波装置，用于信号接收，其中，所述至少一个第一滤波装置包括第一基底，所述至少一个第二滤波装置包括第二基底。
  2. 如权利要求1所述的多工装置，其特征在于，所述第一基底的材料包括高导热材料。
  3. 如权利要求2所述的多工装置，其特征在于，所述高导热材料包括以下至少之一：硅、碳化硅、石墨烯。
  4. 如权利要求1所述的多工装置，其特征在于，所述第二基底的材料包括低射频损耗材料。
  5. 如权利要求4所述的多工装置，其特征在于，所述低射频损耗材料包括以下至少之一：玻璃、蓝宝石，尖晶石。
  6. 如权利要求1所述的多工装置，其特征在于，所述至少一个第一滤波装置中的每个包括多个第一谐振装置，其中，所述多个第一谐振装置包括所述第一基底。
  7. 如权利要求6所述的多工装置，其特征在于，所述多个第一谐振装置包括以下至少之一：声表面谐振装置、体声波谐振装置、微机电系统谐振装置、集成无源器件。
  8. 如权利要求6所述的多工装置，其特征在于，所述多个第一谐振装置为串联或并联的。
  9. 如权利要求1所述的多工装置，其特征在于，所述至少一个第二滤波装置中的每个包括多个第二谐振装置，其中，所述多个第二谐振装置包括所述第二基底。
  10. 如权利要求9所述的多工装置，其特征在于，所述多个第二谐振装置包括以下至少之一：声表面谐振装置、体声波谐振装置、微机电系统谐振装置、集成无源器件。
  11. 如权利要求9所述的多工装置，其特征在于，所述多个第二谐振装置为串联或并联的。
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