CN1897287A - 后侧照光的半导体装置 - Google Patents
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Abstract
一种后侧照光的半导体装置，包括：半导体基底，具有前侧表面与后侧表面；感测元件，位于该半导体装置的前侧表面上；以及反光层，设置于该感测元件之上，设置于该半导体基底之上，其中该反光层具有面对该感测元件的反射面，而该反射面大体对应该感测元件80％的表面，其中该反光层用以反射朝向该后侧表面以及穿透该感测元件的光线。因此，本发明的后侧照光的半导体装置中的反光层可反射照射透过该感测元件区域的光线80％以上，反光层也可反射至少照射于其上的光线30％以上。
Description
技术领域
本发明涉及一种半导体装置，且特别涉及一种半导体影像感测装置。
背景技术
在半导体领域中，后侧照光传感器(backside-illuminated sensors)用于感测照射在基底后侧表面的光线。上述后侧照光传感器也可形成于基底的前侧，此时基底需经薄化而使得照射于基底的后侧光可抵达传感器。然而，经薄化的基底将可能劣化传感器的感测能力。举例来说，长波长的光线可能会穿透传感器而无法造成有效的吸收。因此，便需要改善后侧照光传感器及其应用的基底。
发明内容
有鉴于此，本发明提供了一种后侧照光的半导体装置，包括：
半导体基底，具有前侧表面与后侧表面；感测元件，位于该半导体装置的前侧表面上；以及反光层，设置于该半导体基底之上，其中该反光层具有面对该感测元件的反射面，而该反射面大体对应该感测元件80％的表面，其中该反光层用以反射朝向该后侧表面以及穿透该感测元件的光线。
在前述装置中，该反光层可反射照射透过该感测元件区域的光线80％以上。该反光层也可反射至少照射于其上的光线30％以上。该反光层具有介于50埃至20微米的厚度。该反光层择自由金属、介电材料以及上述材料的组合所组成族群。金属材料择自由铝、铜、钨、钛、氮化钛、钽、氮化钽、金属硅化物以及上述材料的组合所组成族群。介电材料择自由氧化硅、氮化硅、氮氧化硅、低介电常数介电材料及上述材料所组成的组群。上述介电材料的反射率低于半导体基底的反射率。该反光层可为多膜层结构。该反光层可设置于或共构于多膜层内连物结构中。该反光层可包括部分的多膜层内连物。该感测元件择自由互补型金属氧化物半导体(CMOS)传感器、电耦合装置(CCD)传感器、有源型像素传感器、无源型像素传感器或上述传感器的组合。该传感器可包括设置于该反光层下方的感光区。该感光区可具有介于1014～1021原子/每平方厘米的掺杂浓度。该感光区可大体对应该感测元件的像素区的10～80％。该感光区包括N型掺杂区及/或P型掺杂区。
因此，本发明提供了一种后侧照光的半导体装置。该半导体装置包括：
半导体基底，具有前侧表面与后侧表面；多个感测元件，位于该半导体装置的前侧表面上；以及多个金属反射构件，设置于这些感测元件之上，以反射朝向该半导体基底后侧表面的光线以及分别通过这些感测元件的光线80％以上。这些金属反射构件择自由铝、铜、钨、钛、氮化钛、钽、氮化钽、金属硅化物以及上述材料的组合所组成族群。金属反射构件则可设置于位于半导体基底前侧表面的多膜层内连物中并顺应其设置。这些金属反射构件可为部分的多膜层内连物。这些金属反射构件可设置于该多膜层内连物内的一个或多个膜层内。
本发明提供了一种后侧照光的半导体装置。该半导体装置包括：
半导体基底，具有前侧表面与后侧表面；多个感测元件，位于该半导体装置的前侧表面上；以及介电反射层，设置于覆盖这些感测元件上的层间介电层中，以反射朝向该半导体基底后侧表面的光线以及分别通过这些感测元件的光线80％以上。该介电反射择自由氧化硅、氮化硅、氮氧化硅、低介电常数介电材料及上述材料所组成的组群。
本发明还提供一种后侧照光的半导体装置，包括：半导体基底，具有前侧表面与后侧表面；感测元件，位于该半导体基底的前侧表面上，其中该感测元件包括感光区；以及反光层，设置于该感测区之上，其中该反光层反射光线至该感光区。
本发明的后侧照光的半导体装置中的反光层可反射照射透过该感测元件区域的光线80％以上，反光层也可反射至少照射于其上的光线30％以上。
为了让本发明的上述和其它目的、特征、和优点能更明显易懂，下文特举较佳实施例，并配合附图，作详细说明如下。
附图说明
图1至图3分别显示了多种半导体装置，这些半导体装置包括多个依据本发明实施例所制成的后侧照光传感器。
其中，附图标记说明如下：
100、200、300 半导体装置；
110 半导体基底；
120、120a、120b、120c 感测元件；
130 反光层；
130a、130b、130c 介电反光构件；
130d 反光表面；
140 多膜层内连物；
142 第一金属层；
142a、142b 导线构件；
144 第二金属层；
144a、144b 导线构件；
144c 假金属构件；
150 光线。
具体实施方式
图1显示了依据本发明实施例中建构有多个后侧照光的传感器的半导体装置100的剖面图。
在此，半导体装置包括半导体基底110。半导体基底110可包括元素态半导体，例如硅、锗、或钻石。半导体基底110也可包括化合物半导体，例如碳化硅、砷化镓、砷化铟、磷化铟。半导体基底110也可包括多个P型掺杂区及/或N型掺杂区。上述掺杂区可通过如离子布植或扩散方式在不同工艺中形成。半导体基底110也可包括横向的绝缘构件，用以隔离形成在基底上的不同装置。
半导体装置100可包括多个形成在半导体基底110前侧表面上的感测元件120。在一个实施例中，感测元件可设置于前侧表面上并延伸于半导体基底110中。这些感测元件120可分别包括感光区(或光子感应区)，其可为通过如扩散或离子布植的方法形成于半导体基底110内且具有N型及或P型掺质的掺杂区。感光区可具有介于1014～1021原子/每平方厘米的掺杂浓度。感光区可具有对应于相关感测元件10～80％的表面区，因而用于接收抵达其上的照光。感测元件120例如为感测二极管、互补型金属氧化物半导体(CMOS)影像传感器、电耦合装置(CCD)传感器、有源型像素传感器、无源型像素传感器及/或其它经扩散或其它方式形成于基底110中的传感器。如前所述，感测元件120可包括公知及/或未来发展的影像感测装置。感测元件120可包括采用感测阵列或其它适当方式所设置的多个像素，其中这些感测像素可具有不同感测方式。举例来说，这些感测像素可包括部分的CMOS感测像素与部分的无源型传感器。再者，感测元件120可包括彩色影像传感器及/或单色影像传感器。感测元件120还可包括或耦接其它构件，例如一个电子电路构件，并在连接后操作感测元件120并对应照光而产生适当反应。在操作时，半导体装置100用于接收射向半导体基板110后侧表面的光线150，由于不存在有栅极构件与金属线等会对于光路造成阻碍等对象，因而对于照光而言可得到最大的照射效果。半导体基底110可经由薄化而使得照射于其后侧表面的光线有效地抵达感测元件120。
半导体装置100还可包括形成于半导体基底110前侧表面的反光层130。反光层130可设置于形成于半导体基底110上感测元件120之上，用以使得朝向半导体基底110的后侧表面的光线以及穿透感测元件120后的光线可经反射而至感测元件120处，因而改善其感测度。经由适当设计与设置，反光层130可使得后侧的照射可有效地反射至感测区。在一个实施例中，可使得通过感测区的80％以上之后侧照射光可有效地经反射而回照。在一个实施例中，反光层130对于后侧照射光具有大体30％以上的反射率。反光层130可具有面对对应感测元件的反射表面，且该反射表面约占对应的相关感测元件表面大体80％以上。反光层130可具有介于50埃至20微米的厚度。反光层130可较为靠近感测元件120，用以最佳化其效率与表现。在一个实施例中，反光层130形成于金属内连物及/或层间介电层(ILD)中。反光层130可具有连续反射表面以反光后侧照射光至多个感测元件120处。或者，反光层130可包括多个反光的分隔/连接构件，其经图案化并设置于相同膜层或分散设置于不同膜层中。举例来说，反光层130的一部分可设置于第一金属层中，而其它部分则可设置于第二金属层中。在其它范例中，对应于感测区的反射表面可包括一个或一个以上的反射构件。反光层130可包括用于半导体装置100中的功能元件，例如接触物、介层物与金属导线等。这些功能性构件除了其本身功能外，其经由适当设置后则可有效地反射光线。举例来说，可经由重新设置金属导线且/或加宽的而无须改变其原始功能。反光层130可包金属、介电材料、其它工艺/制造用料及/或其组合。反光层130可采用如铝、铜、钨、钛、氮化钛、钽、氮化钽、金属硅化物或其组合等金属。或者，反光层130可采用如氧化硅、氮氧化硅、氮化硅、低介电常数材料、或其组合的介电材料。在一个实施例中，反光层130中的介电层可具有少于2的消光系数。在另一个实施例中，反光层130中的可包括具有弯曲表面反光构件，用以聚焦并有效反射光线。反光层130可包括具有堆叠多重膜层结构的反光构件，例如为包括插入在两个第二类型膜层间的第一类型膜层的三明治结构。
半导体装置100可包括形成于半导体基底110与感测元件120之上的多膜层内连物140。多膜层内连物140可沿着反光层130而设置。半导体装置100还可包括黏附于半导体基底110的背面的透光层(未显示)，用以机械地支撑半导体装置100并光学地允许后侧照射光通过。半导体装置100还可包括设置于半导体基底110后侧表面的彩色滤光层(未显示)，用以应用于彩色显像。再者，半导体装置100还包括多个微透镜(未显示)，其设置于半导体基底110后侧表面，或者在使用彩色滤光层时介于彩色滤光层与半导体基底的后侧表面间，还或者在使用于半导体基底的后侧表面与彩色滤光层之上，以使得后侧照光可聚焦至感测区。反光层130可通过应用具有较高反射率的材料及/或采用堆叠型多膜层结构以更加改善其反射率。堆叠型多膜层结构可经过设计与设置，使得其中个别膜层的厚度与反射系数皆经过良好调整而使得来自不同膜层的反射光可建设性地干涉并因而加强反射光。个别膜层的反射系数需经过仔细的挑选或调较以最大化来自于堆叠型多膜层结构的反射。反光层130可通过多种工艺所制成，并可通过整合如双镶嵌工艺的传统制成技术所制成。反光层130的制作方法例如为化学气相沉积法、物理气相沉积法、原子层沉积法、电镀法、旋转涂布法、以及其它适当程序。上述方法也可搭配如研磨/平坦化、蚀刻、光刻以及热工艺等其它工艺一起应用。值得注意的，可最佳化所采用工艺步骤的配方而得到所期望的反射系数与厚度。
请参照图2，显示了依据本发明的另一个实施例的设置有多个后侧照光传感器的半导体装置200。半导体装置200可包括半导体基底110、如感测元件120a、120b与120c的多个感测元件120，以及如彩色滤光层与微透镜等大体相似于半导体装置100中所应用构件的其它适当构件。
半导体装置200包括多膜层内连物140与反光层130。多膜层内连物140可包括至少一内连物层。举例来说，图2所示的多膜层内连物包括两个金属层，例如第一金属层142以及第二金属层144。第一金属层142包括导线构件142a与142b，而第二金属层144则包括导线构件144a、144b与假(dummy)金属构件144c。多膜层内连物140内可设置有垂直介层物(未图示)并将其连接于第一金属层142与半导体基底110之间。多膜层内连物140内还可设置有垂直介层物(未图示)并将的连接于不同金属膜层间，例如连接于第一金属层142与第二金属层144之间。除了作为一般电性连接用途之外，多膜层内连物140也可设计并作为部分的反光层130。举例来说，导线构件142a可于设置并加宽它，以有效地反射后侧照射光至对应的感测元件120a。在另一个范例中，多膜层内连物140可包括多重金属构件(形成于同一膜层或不同膜层之中)，例如解说用的导线构件142b与144b，经过设置后其可使得所形成的结合结构(在范例中的142b与144b)可有效地反射后侧照射光至对应的感测元件120b。在另一个范例中，多膜层内连物140可包括假结构(dummy structure)，例如假金属层144c，以使得其或其与其它构件(在本实施例中的142b)的结合可有效地反射后侧照射光至对应的感测元件120c。在另一个实施例中，可更额外地采用接触/介层构件以单独地或经结合其它构件后用于加强光反射。经过设计，所有反光构件较佳地为紧密靠近于感测区，用以有效地反射光线。
多膜层内连物140可包括公知内连物结构，因而可通过公知方法所制成。在一个实施例中，多膜层内连物140可利用铝技术所制成。在另一个实施例中，多膜层内连物140可利用铜工艺所制成。应用铝技术所制成的多膜层内连物140可包括铝、铝硅铜合金、钛、氮化钛、钨、金属硅化物或其组合。应用铝技术所制成的多膜层内连物可包括多膜层结构。举例来说，多膜层结构可包括含如钛/氮化钛材料的阻障/黏着层以及含铝合金的铝膜层。接触介层构件可包括相似的阻障黏着膜层以及钨塞。应用铝技术所制成的多膜层内连物可通过溅镀、化学气相沉积或上述方法的组合方法所形成。也可采用如光刻与蚀刻的其它工艺以图案化用于垂直连接(介层物与接触物)以及水平连接(金属导线)的金属材料。应用铜工艺所制成的多膜层内连物可包括铜、铜合金、钛、氮化钛、钽、氮化钽、钨、金属硅化物、钽钴磷或其结合。铜工艺所制成的多膜层内连物可采用双镶嵌工艺，例如为沟槽先行形成或介层物先行形成的工艺。在上述双镶嵌工艺中，则可采用电镀与化学机械研磨等工艺。
在此，反光层130还可包括用于邻近结构与半导体工艺用的其它金属材料。举例来说，其可为制造半导体装置200时的所需采用的半导体工艺所应用的适当金属材料。在多膜层内连物140结构中还可设置有介电材料并填入于介于金属构件间的空隙中。其所应用的介电材料大体相似于半导体装置100中所采用的公知层间介电材料。举例来说，介电材料可包括如碳掺杂氧化硅以及氟掺杂氧化硅的氧化硅、氮化硅、氮氧化硅、低介电常数材料、或上述材料的组合以及或其它适当材料。
请参照图3，显示了依据本发明另一个实施例的具有多个后侧照光传感器的半导体装置300的剖面图。半导体装置300包括半导体基底110、多个感测元件120，例如感测元件120a、120b、与120b，以及如彩色滤光层、微透镜与内连物等大体相似于半导体装置200内构件的其它适当构件。
在此，半导体装置300还包括设置于并整合于层间介电层中的介电反光层130。介电反光层130具有低于半导体基底110的反射率且具有不同于邻近层间介电层的反射率。介电反光层130可包括如氧化硅、氮化硅、氮氧化硅、低介电常数材料、其它适当介电材料或上述材料的组合等介电材料。介电反光层130可包括多个图案化的反光表面，例如介电反光构件130a、130b以及130c，及/或具有连续的反光表面，如反光表面130d。介电反光层130可包括堆叠的多膜层结构。堆叠的多膜层结构可经由设计而使得各膜层具有适当厚度与反射率，用以改善反光效果。举例来说，可经由调整堆叠的多膜层结构的厚度而使得反射光形成建设性干涉。此外，可更可仔细挑选或调整各别膜层的反射率，用以最佳化上述多膜层的反射情形。
此外，也可采用如薄膜光学的公知技术以改善反射效果。在一个实施例中，介电反光层130可具有包括第一介电材料的第一膜层、第二介电材料的第二膜层以及第三介电材料的第三膜层的三明治结构，例如图3所示的反光构件130a、130b与130c。在另一个实施例中，介电反光层130包括双膜层结构，例如介电反光层130d。介电反光层130可通过如化学气相沉积法、物理气相沉积法、热氧化法、原子层沉积、旋转涂布、其它适当工艺或上述方法的组合所形成。也可搭配如化学机械研磨的其它工艺技术。在一个实施例中，可通过化学机械研磨程序的调整以最小化碟盘效应与腐蚀效应，用以产生平坦表面。在另一个实施例中，可通过化学机械研磨程序的调整而产生适度的碟盘效应，用以产生曲化表面而有效且适用于聚焦反射。介电反光层130与多膜层内连物140经结合后可达到最大反射。在一个实施例中，介电反光构件130b与导线构件142b(电性功能导线/接触物/介层物或假金属线)经结合而提至对应的感测元件120的反射情形。在另一个实施例中，介电反光构件130c与位于不同阶层中的其它介电反光构件130d经结合后可对于对应的感测元件120c提供较佳的反射效果。此外，依据本发明的实施例，也可采用其它用于改善反射的适当结合情形与结合方式。
如前所述，在半导体基底前侧上形成感测元件、反光层、保护层与其它结构后可更工艺处理半导体基底110的后侧表面。举例来说，可经由薄化后侧表面以使得照射光可有效地抵达感测区。半导体基底厚度的降低可采用化学机械研磨及/或蚀刻等工艺。半导体基底110的后侧表面还可由具有足够厚度与机械强度的透光膜层所保护，用以支撑与保护半导体基底110。
在前述揭示的结构与方法中，在应用上照射光并非限定于可见光束，并可为其它光学光，例如红外线、紫外线或其它适当射线光束等。如此，经由挑选与设计，反光层130将可有效地反射对应的射线光束。
虽然本发明已以较佳实施例揭示如上，然其并非用以限定本发明，任何本领域的技术人员，在不脱离本发明的精神和范围内，当可作各种的修改与变更，因此本发明的保护范围当视所附的权利要求所界定的范围为准。
Claims (11)
1.一种后侧照光的半导体装置，包括：
半导体基底，具有前侧表面与后侧表面；
感测元件，位于该半导体装置的前侧表面上；以及
反光层，设置于该半导体基底之上，其中该反光层具有面对该感测元件的反射面，而该反射面大体对应该感测元件80％的表面。
2.根据权利要求1所述的后侧照光的半导体装置，其中该感测元件包括有源型像素传感器或无源型像素传感器。
3.根据权利要求1所述的后侧照光的半导体装置，其中该反光层对于后侧照射光具有至少30％的反射率。
4.根据权利要求1所述的后侧照光的半导体装置，其中该反光层具有介于50埃～20微米的厚度。
5.根据权利要求1所述的后侧照光的半导体装置，其中该反光层包括金属或介电材料。
6.根据权利要求5所述的后侧照光的半导体装置，其中该介电材料具有低于2的消光系数。
7.根据权利要求1所述的后侧照光的半导体装置，其中该反光层具有多膜层结构。
8.一种后侧照光的半导体装置，包括：
半导体基底，具有前侧表面与后侧表面；
感测元件，位于该半导体基底的前侧表面上，其中该感测元件包括感光区；以及
反光层，设置于该感测区之上，其中该反光层反射光线至该感光区。
9.根据权利要求8所述的后侧照光的半导体装置，其中该感光区具有介于1014～1021原子/每平方厘米的掺杂浓度。
10.根据权利要求8所述的后侧照光的半导体装置，其中该感光区大体对应该感测元件的像素区的10～80％。
11.根据权利要求8所述的后侧照光的半导体装置，其中该感光区包括N型掺杂区或P型掺杂区。
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101667584A (zh) * | 2008-09-05 | 2010-03-10 | 法国原子能委员会 | 反光cmos图像传感器 |
| CN104541371A (zh) * | 2012-05-16 | 2015-04-22 | 索尼公司 | 固态成像单元和电子设备 |
| CN104009057A (zh) * | 2014-06-16 | 2014-08-27 | 北京思比科微电子技术股份有限公司 | 背照式图像传感器像素及图像传感器及其制作方法 |
| US10236311B2 (en) | 2014-10-20 | 2019-03-19 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and electronic device to improve quality of an image |
| CN106409848A (zh) * | 2015-07-30 | 2017-02-15 | 力晶科技股份有限公司 | 影像感测器 |
| CN106409848B (zh) * | 2015-07-30 | 2019-11-12 | 力晶积成电子制造股份有限公司 | 影像感测器 |
| CN111830527A (zh) * | 2017-01-19 | 2020-10-27 | 索尼半导体解决方案公司 | 光接收元件、成像元件和成像装置 |
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| US20070001100A1 (en) | 2007-01-04 |
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| JP2007013147A (ja) | 2007-01-18 |
| KR20070003658A (ko) | 2007-01-05 |
| CN100490161C (zh) | 2009-05-20 |
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| KR100881170B1 (ko) | 2009-02-02 |
| TW200707714A (en) | 2007-02-16 |
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