CN1842618B - 用于沉积半导体晶片薄膜和使其平面化的装置和方法 - Google Patents
用于沉积半导体晶片薄膜和使其平面化的装置和方法 Download PDFInfo
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Abstract
提供了一种用于在晶片表面上沉积金属层的电镀装置。在一个例子中,能被充电作为阳极的邻近头紧靠着晶片表面放置。在晶片和邻近头之间提充电镀流体以产生局部金属电镀。
Description
发明背景
1.发明领域
本发明涉及半导体晶片沉积和平面化,更具体地说,涉及利用局部沉积更有效地沉积薄膜和能局部平面化的装置和技术。
2.相关技术描述
电镀为一种沿用已久的沉积技术。在半导体制造技术中,电镀一般在单晶片处理器中进行,其中晶片浸没在电解液中。在电镀期间,晶片一般被固定在晶片支架中,相对于带正电且用作阳极的板(也浸没在电解液中),其为负或接地电位。例如,为了形成铜层,电解液一般为介于约0.3M和约0.85M之间的CuSO4,pH在约0和约2之间(用H2SO4调节),并具有痕量(浓度为ppm)的专用有机添加剂和Cl-来提高沉积质量。在电镀工艺中,晶片一般被旋转以有利于均匀电镀。电镀工艺中,在得到足够的膜厚之后,晶片从电镀室移到另一个室中,它在那里以去离子(DI)水冲洗,以从晶片表面除去残留的电解液。然后对晶片进行另外的湿处理,以从背面和斜边除去不想要的铜,然后另一次DI水冲洗除去湿处理化学残留物。然后在准备好进行化学机械平面化(CMP)操作前,对晶片进行干燥和退火。
不象晶片的真空处理,现在在晶片处理工艺中的每个“湿”处理步骤后,都有DI水冲洗的经常步骤。由于电解液稀释考虑并增加了硬件设计复杂性,因此DI水冲洗一般不在电镀室内进行。目前,晶片电镀设备上大约50%的湿处理站用于电镀,这对晶片产量有相当大的负面影响,并增加了处理成本。另外,为了能在屏障层上直接镀铜,使表面活化和电镀之间的时间最小化是关键的。表面活化后冲洗以及将晶片传送到电镀模件需要的额外时间显著限制表面活化步骤的效果。因此需要一种在湿处理步骤之间去掉DI水冲洗的方法。
在电镀工艺中,晶片用作阴极,这需要将电源电连接到晶片上。通常,晶片支架上多个分离的触点将晶片支架电连接到晶片的边缘上。通过这些触点提供用于电镀晶片的电流。电镀电流必须均匀分布在晶片周围以提供均匀的沉积。通过电阻晶种层来保持和晶片的一致的接触电阻对均匀沉积是至关重要的。因此,为了尽力提供均匀的沉积,触点的清洁是优选的。在一些情况下,触点的清洁需要额外的步骤,这进一步限制了电镀操作的生产率。
电镀铜时的另一项挑战是双极效应,在接触电阻非常高时观察到。这种效应导致位于触点正下方的铜晶种层的蚀刻,借此在电镀工艺中用作晶片和电源之间的电接触。现有技术方法试图通过密封触点与电解液分开来解决这个问题,借此避免触点上的电镀并消除双极效应。不幸地是,不能完全密封,并且触点变得被污染,沿晶片周围的触点中的电流分布造成不均匀的电镀。因此,在电镀工艺中,必须通过其它一些主动监测方法来控制接触电阻。
当应用触点到晶片表面时,还出现其它负面的物理挑战。当触点一般被放置在晶片的外围区域(例如晶片的1-3mm外部区域)时,必须施加一定量的力来保持与晶片的一致电接触。在一些情况下,这些力的施加可导致晶片上的缺陷,因为在某些材料如多孔低k介电膜上施加了机械应力。
随着半导体晶片上的特征尺寸继续收缩,预期铜晶种层厚度也减少,从现在的大约1000埃到小于约400埃。晶种层的厚度减少对确保特征顶部的合理大小开孔是必需的,以便能在电镀铜工艺中形成不合空隙的间隙填充。由于晶种层的作用是在电镀中在整个晶片上分布电镀电流,因此较薄的电阻晶种层在室中引起严重问题,其中室被设计用于在晶片圆周上的触点附近均匀电镀。这种效应作为终端效应已为人所知,其在较大的晶片如目前的300mm晶片上更显著。
因此需要一种电镀系统,其限制冲洗工艺,并提供足够电接触而不用施加过量表面力,且以少量或不用晶种层在晶片上产生均匀电镀。
发明概述
概括说来,本发明为一种利用基于弯月面的电镀工艺提供局部电镀的装置。在所要求的发明中,电镀和平面化工艺在或者整个晶片表面上进行,或在子孔电镀情况下,尺寸比晶片小的电镀头扫描晶片并提供局部电镀。
应认识到本发明可以以多种方式来实施,包括作为工艺、装置、系统、设备或方法。下面描述本发明的几种发明实施方案。
在一种实施方案中,提供一种用于电镀晶片表面的电镀装置。晶片的表面能被充电作为阴极。包括能被充电作为阳极的邻近头(proximity head)。邻近头具有多个输入和多个输出,当邻近头靠近晶片表面放置时,多个输入中的每一个都能输送流体到晶片的表面,多个输出中的每一个都能从晶片表面移出流体。当晶片和邻近头被充电时,流体输送到晶片表面和从晶片表面移出使局部金属电镀成为可能。
在本发明的另一实施方案中,在第一邻近头和用于沉积金属层的晶片表面之间产生充电作为阳极的第一流体。在第二邻近头和晶片表面之间能产生充电作为阴极用于能在晶片表面上进行非消耗化学反应的第二流体。当在晶片表面上沉积金属层时,在第一流体和第二流体之间限定了电连接。
在本发明的又一实施方案中,在第一邻近头和用于沉积金属层的晶片表面之间产生充电作为阳极的第一流体。在第二邻近头和晶片表面之间能产生充电作为阴极用于能在晶片表面上进行非消耗化学反应的第二流体。当在晶片表面上沉积金属层时,在第一流体和第二流体之间限定了电连接。第二邻近头借助垫与沉积层物理接触以能除去至少部分金属层。
本发明有许多优点,而且大多数都是值得注意的;实施方案使局部电镀成为可能,从而减少了电镀的活化区域并改善了化学交换。局部金属电镀减小了必须分布在晶种层上的总电镀电流,从而显著减轻了电阻晶种层效应和提高了沉积均匀性。原位膜厚度控制和平面化通过减少处理中晶片转移次数和在一件设备上合并几种应用产生提高的生产率。本发明的其它方面和优点将从结合附图的以下详细描述中变得清楚,所述详细描述通过举例说明本发明的原理。
附图简述
通过结合附图的以下详细描述将能容易地理解本发明。为使本描述容易,相同的附图标记代表相同的结构元件。
图1A图示了电镀装置。
图1B图示了局部金属电镀中显示的电镀装置。
图1C提供了电镀装置邻近头的底视图。
图1D图示了装备有平面化用抛光垫的电镀装置的透视图。
图2A图示了与晶片没有机械接触的电镀装置。
图2B图示了用于电镀操作的与晶片没有机械接触的电镀装置所用的电解反应。
图2C提供了没有机械接触的电镀装置的横截面图,显示了在晶片表面界面处的电镀头和第二头。
图2D提供了没有机械接触的电镀装置的横截面图,显示了当电镀头和第二头施加在晶片表面上时沉积层的进展。
图3提供了电镀和平面化装置的横截面图,显示了晶片表面界面处的电镀和电解头,其中第二头装备有平面化用抛光垫。
图4为电镀装置操作的流程图。
优选实施方案详述
本发明公开了用于电镀衬底表面的方法和装置。在下面的描述中,为了提供对本发明的完整理解,描述了大量具体细节。但是,本领域的一个普通技术人员应认识到,在没有部分或全部这些具体细节的情况下也可实施本发明。在其它情况下,为了避免不必要地混淆本发明,没有详细描述熟知的工艺操作。
图1A为根据本发明一种实施方案的示例性电镀装置100的图。具有晶种层106的晶片104放在支架130上。负偏压电源124借助电触点132为晶片104充电以用作阴极。电触点132可被设为环绕晶片104的单环、单独机械触点或多个单独触点的形式。在一种优选实施方案中,电触点132应用于晶片104的圆周,从而与边缘外区域(edgeexclusion region)133产生接触。对于200和300mm晶片,边缘外区域133一般为1到3mm。
通过正电源122充电作为阳极的邻近头102用臂103悬在晶片104上方。臂103可包含用于固定一个或多个管道的管道通道105,管道用于输送和移出电镀操作中使用的流体。当然,管道通道105可通过任何其它合适的技术如捆扎到臂103上等连接到邻近头102上。在一种实施方案中,臂103为系统的一部分,有利于邻近头102沿方向120横跨晶片104移动。
邻近头102的移动可被设计为以任何方式来扫描晶片104。应认识到,系统是示例性的,可使用能移动头紧密邻近晶片的任何其它合适类型的构造。例如,当旋转晶片时,邻近头102可在晶片104中心起动,并线形地向前移动到外边缘。在另一实施方案中,邻近头102可在以轨道形式旋转的同时沿固定晶片行进,或另外以能处理晶片所有部分的形式在晶片上移动。在另一实施方案中,邻近头102可利用往复运动扫描晶片,以直线方式从晶片的一个边缘移动到晶片径向相对的另一边缘,或可利用其它非直线移动,比如例如径向运动、环形运动、螺旋形运动、Z字形运动等。运动还可为任何适当且由使用者所要求的特定运动模式。在这种运动中,需要电镀操作输送均匀的金属材料层到晶片104的表面上。关于邻近头102的功能和电镀技术的细节将在下面更详细地描述。
电镀装置的局部金属电镀示于图1B。本文使用的局部金属电镀是指限定在邻近头102下方沉积金属材料的区域。如图所示,邻近头102下方的区域小于晶片104的表面区域。因此,在给定的时间点,局部金属电镀将只发生在邻近头102下方。为了在晶片104的表面上完成更多的金属电镀,邻近头102将需要在晶片104的另一个表面区域上移动。在示例性实施方案中,邻近头102将连接到臂103上,如图1A所示。尽管任何数目的移动模式都可用来确保晶片104的所需区域适当电镀有特定的金属材料,但一种方法是移动臂103,同时在控制的环境中旋转晶片104。另外,臂103只是移动邻近头102的一种示例性方法。例如,可移动晶片104代替移动邻近头102。
回到图1B,邻近头102放置在具有晶种层106的晶片104上。晶种层106是任选的,但是,一些实施方案可在进行电镀操作前从在其上具有形成的晶种层106中受益。当铜为正被电镀的材料时,晶种层一般为可使用已知技术溅射或沉积的薄铜层。然后,当邻近头102以方向120行进横过晶片104时,沉积层108形成于晶种层106上。沉积层108借助弯月面116中包含的电解液110促成的电化学反应形成,其中弯月面116被限定在邻近头102和晶种层106之间。在可替换的实施方案中,沉积层108可形成在不是晶种层的层上。这种层的例子可为阻挡层或一些其它层材料。
图1C图示了根据本发明一种实施方案的邻近头102的总底视图。邻近头102具有多个输入112a和112b和输出112c。多个输入112a和112b和多个输出112c可由一个或多个单独管道来限定。每个管道可在邻近头102主体的制造中被机械加工或成形。在另一实施方案中,多个输入112a和112b和输出112c可用能使流体以与管道类似的方式被输送的环形环来限定。多个输入112a和112b和输出112c的特定结构的选择可采用多种物理形式和形状,这为本领域那些技术人员所理解。但是,对于选择的形式或形状,重要的是能在功能上通过输入输送流体和通过输出移出流体。因此,在一种实施方案中,晶片104在全部区域中保持干燥,除了在邻近头102下方的区域中。
如所示,电镀化学物质通过多个输入112b来供应,输入112b能使邻近头102下方的局部金属电镀成为可能。可设计电镀化学物质用于沉积铜,但是,可根据特定应用(即所需金属材料的类型)以其它电镀化学物质代替。电镀化学物质可由用于沉积金属、合金或复合金属材料的水溶液来限定。在一种实施方案中,沉积金属可包括但不限于铜材料、镍材料、铊材料、钽材料、钛材料、钨材料、钴材料、合金材料、复合金属材料等中的一种。
电镀化学物质优选被限制在弯月面116中,其可定义为位于晶种层106以上邻近头102以下的薄流体层。为了进一步限制和限定弯月面116,通过多个输入112a供应异丙醇(IPA)蒸汽。弯月面116的厚度可根据所需的应用变化。在一个例子中,弯月面的厚度可在约0.1mm和约10mm之间。因此,邻近头102靠近晶片表面放置。本文使用的术语“靠近”限定了邻近头102的下表面和晶片104表面之间的间隔,并且该间隔应足以能形成流体弯月面。多个输出112c提供真空以移出通过多个输入112b和112a输送的电镀反应的流体副产物。
根据本发明,通过在由多个输入112b供应的电解液110中发生的化学反应形成沉积的电镀材料。为邻近头102充电作为阳极有利于该化学反应。在一个例子中,邻近头电连接到正偏压电源122上。为了能够电镀,在晶种层106处进行化学物质中离子的还原,晶种层106通过到负偏压电源124的电触点132被充电作为阴极。化学反应使金属层形成为沉积层108。通过多个输出112c移出反应副产物和耗尽的反应物流体。
在另一实施方案中,涡流传感器114被结合到邻近头102中。涡流传感器114用于确定金属层的存在和厚度,和确定特定工艺结束时间(如终点)。在一种实施方案中,沉积层108的厚度可在沉积工艺中被感测到。按照这种方式,可达到金属材料的控制施加。当然,可使用测量沉积层108厚度的其它技术。对于涡流传感器功能的更详细描述,可参考2002年6月28日提交的题目为“Integration of SensorBased Metrology into Semiconductor Processing Tools”的美国专利申请No.10/186472。
图1D图示了根据另一实施方案的电镀和抛光系统101。在这种实施方案中,邻近头102装备有抛光垫150,其帮助使沉积层108平面化。通过多个输入112a和112b供应的不含磨料的反应性化学物质被应用到有利于平面化层108’的抛光垫150上。抛光垫150可由任意数量的材料制成,只要垫材料中的通道允许化学物质流体通过即可。在一个例子中,该材料可为多孔聚合物材料,其类似于化学机械抛光(CMP)设备中常用的那些材料。其它材料可包括例如聚氨酯化合物、固定磨料如Minneapolis Minnesota的3M的MWR64或MWR69等。在一种示例性操作中,金属材料的沉积将几乎与抛光垫150推动的抛光操作同时发生。在另一实施方案中,可使用用于沉积金属材料的同一邻近头102进行抛光。在另一实施方案中,电镀头和抛光头可为独立的工件,并且抛光头拖着电镀头。但是,抛光可在沉积完成后的较晚时间点发生。可以认识到,可根据所需的应用选择沉积和抛光操作的实际组合。通过交替电镀和平面化步骤或通过进行同时的电镀和平面化,除去平坦度差异和不需要的过多材料。
图2A为根据本发明一种实施方案的示例性无接触式电镀装置200的图示。本文使用的无接触式电镀装置为利用电解液接触的一种装置。在这种实施方案中,邻近头102受臂103支撑而靠近晶片104,以便形成弯月面116。在这个图示中,晶种层106暴露于弯月面116,而晶片104固定在支架130上,如上所述。通过连接到正电源122上为邻近头102充电作为阳极。另外,第二邻近头102’由臂103支撑,并用作能使邻近头102进行电镀的辅助设施,同时不从晶片104的表面除去材料。臂103可为固定邻近头102的臂的延伸部分或单独的臂。在这种替代性实施方案中,通过负偏压电源124为第二邻近头102’充电作为阴极。在第二邻近头102’和晶种层106之间形成弯月面116’。弯月面116’所导致的促进为限定弯月面116’本身的化学物质的结果。下面提供弯月面16’的示例性化学特性。
图2图示了用于沉积层108金属电镀的无接触式电镀装置200所用的示例性电解反应。如前所述,在邻近头102下方,弯月面116包含通过正偏压电源122由阳极充电的电解镀化学物质。
弯月面116包括通过多个输入112a供应的IPA蒸汽和通过多个输入112b供应的电解液110电镀化学物质,如图2C所示。在一种示例性实施方案中,邻近头102下方的多个输入112b提充电解液,从而当邻近头102被正偏压电源122充电时,在晶片104表面处的反应为Cu+2+2e-→Cu。由于这个是氧化还原(REDOX)反应,因此远离晶片102表面的反应为Cu→Cu+2+2e-,如果使用可消耗Cu电极的话,或2H2O→O2+2e-,如果使用非消耗电极的话。
类似地,用作反电极的第二邻近头102’由负偏压电源124充电。在第二邻近头102’下方形成的第二弯月面116’包含电解化学物质。第二弯月面116’包含通过多个输入112a供应的IPA蒸汽和通过多个输入112b’供应的电解液110’。在一种示例性实施方案中,多个输入112b’在第二邻近头102’处提充电解液,由此晶片104表面处的反应为MeX[络合物]→MeX+1[络合物]+e-的形式。在这种情况下,Me可为金属离子如Cu,X为2。络合剂可为乙二胺或氨(NH3)。远离晶片104表面的反应可为逆反应,如→MeX+1[络合物]+e-→MeX[络合物]。其它化学物质可提供类似的功能;选择化学物质使得反电极化学物质处在比Cu→Cu+2+2e-电势低的电势下,从而抑制Cu在反电极处的溶解。另外,第二邻近头102’下方的电解液110’可设计有其它添加剂如乙二醇以帮助抑制Cu溶解。在邻近头102和第二邻近头102’之间通过晶种层106建立电连接136。通过该电连接136,电解液110和电解液110’将被连接以完成REDOX对,并能通过邻近头102电镀。重要的是注意第二邻近头102’提供到阴极(即负偏压电源)的连接,因此不需要与晶片104的物理接触。邻近头102和第二邻近头102’的联合限定了到晶片104的无接触式连接,这提供了所需金属材料更有效和更均匀的电镀。
在另一实施方案中,涡流传感器114被结合到邻近头102中。涡流传感器114用于确定金属层的存在和厚度,和确定特定工艺结束时间。在一种实施方案中,沉积层108的厚度可在沉积工艺中由涡流传感器114感测到。按照这种方式,可达到金属材料的控制施加。图2D显示了当沉积层108施加到晶片104表面上时的进展,其中第二邻近头102’正位于沉积层108上。
图3图示了根据本发明一种实施方案的电镀和平面化装置300。邻近头102按前述方式操作。第二头102’为如上所述的电镀操作提充电路。另外,在这种实施方案中,第二头102’装备有抛光垫150。抛光垫150提供沉积层108的校平整,产生平面化层108’。抛光垫150的存在不会抑制第二头102’的电连接136。还可通过多个输入112a和112b’输送不含磨料的反应性化学物质来帮助校平整工艺。可与邻近头102下方的沉积工艺同时在第二邻近头102’下获得平面化层108’。
在另一实施方案中,在独立于第一邻近头102和第二邻近头102’操作的第三头下方实现平面化。经由弯月面形成和IPA限制输送的流体可为不含磨料的化学物质,其可与结合到该头上的抛光垫一起促进平面化。
在另一实施方案中,具有抛光垫150的第二邻近头102’装备有散射计系统156,其通过感测沉积层108形貌的背散射参数提供平面化控制。
图4为提供根据本发明的电镀和平面化装置400的示例性操作方法的流程图。给定如上面图1-3所述的电镀装置,操作员必须提供具有晶种层402的晶片。在替代性实施方案中,晶片可能没有已在上面形成的晶种层。晶片可按多种方式传送到晶片支架上。晶片传送可包括一系列的借助机械、真空、静电或固定晶片的其它方式的人工或自动机器人移动。一旦晶片被放在支架上,操作员必须选择沉积404所需的材料。然后将邻近头放在所需的沉积区域406上方。邻近头的放置可被预先确定并由自动程序辅助。可在沉积前的任何时间,包括在晶片和臂移动中或通过多个上述输入提供流体时,可施加偏压到造成沉积408的邻近头上。一旦邻近头具有施加的偏压,则在邻近头下方施加选择的流体输入和真空输出410,并沉积412材料。
原位测量沉积层414,确保达到所需的厚度416。邻近头将保持在它目前的位置,直到通过由原位测量系统414提供的反馈获得所需的厚度。在一种实施方案中,测量系统可为一种上述的涡流传感器系统。当然,也可使用其它厚度测量技术。一旦达到所需的沉积厚度,负责沉积的邻近头将停止流体的输送和移出420。然后为下一个晶片422设定系统。在一种实施方案中,从晶片的面上移出邻近头,而在其它实施方案中,晶片本身可以被传送,而头保持在晶片上方。一旦移出晶片,另一晶片就被放到支架上进行随后的沉积。
如果系统装备有如上面图1D和图3所述的平面化部件,则沉积材料将被平整以帮助在横跨所需区域上的均匀沉积。可使用原位测量技术来确保沉积层被平面化424。当获得足够的平坦度时,就可停止流体输送和除去系统420,并为下一个晶片设定系统422。在一种实施方案中,从晶片的面上移去邻近头,而在其它实施方案中,晶片本身被传送,而头保持在晶片上方。一旦移出晶片,另一晶片可以被放到支架上进行随后的沉积和平面化。
尽管就几种优选的实施方案描述了本发明,但应认识到,当本领域那些技术人员读到前面的说明书并研究附图时,能认识到它的各种替换、添加、交换和等价物。例如,本文描述的电镀系统可用于任何形状和大小的衬底,如例如200mm晶片、300mm晶片、平板等。因此本发明旨在包括落在所要求发明的真实精神和范围内的所有这种替换、添加、交换和等价物。
Claims (27)
1.一种用于电镀晶片表面的电镀装置,包括:
被配置放在晶片表面上的第一邻近头,在邻近头和晶片表面之间能产生第一流体,该第一流体能被充电作为阳极以在晶片表面上沉积金属层;和
被配置放在晶片表面上的第二邻近头,在邻近头和晶片表面之间能产生第二流体,该第二流体能被充电作为阴极以能够在晶片表面上进行非消耗的化学反应,其中当在晶片表面上沉积金属层时,在第一流体和第二流体之间限定电连接。
2.如权利要求1所述的用于电镀晶片表面的电镀装置,其中第一流体通过第一流体的电解性质提供与衬底的电连接,所述第一流体通过与正偏压电源的电接触被充电作为阳极。
3.如权利要求1所述的用于电镀晶片表面的电镀装置,其中第二流体通过第二流体的电解性质提供与衬底的电连接,所述第二流体通过与负偏压电源的电接触被充电作为阴极。
4.如权利要求1所述的用于电镀晶片表面的电镀装置,其中在第二邻近头下方,非消耗的化学反应通过产生补偿反应防止金属层的溶解。
5.如权利要求4所述的用于电镀晶片表面的电镀装置,其中非消耗的化学反应为由氧化过程的还原产生的补偿反应。
6.如权利要求1所述的用于电镀晶片表面的电镀装置,其中第一邻近头和第二邻近头上多个输入中的每一个都限定为圆形管道、环形环和不连续管道中的一种。
7.如权利要求1所述的用于电镀晶片表面的电镀装置,其中第一邻近头和第二邻近头上多个输出中的每一个都限定为圆形管道、环形环和不连续管道中的一种。
8.如权利要求1所述的用于电镀晶片表面的电镀装置,其中第一邻近头下方的流体是由一种或多种流体限定,并且该流体选自异丙醇(IPA)、电解液和能够电镀金属的电镀化学物质。
9.如权利要求8所述的用于电镀晶片表面的电镀装置,其中电镀化学物质可由用于沉积金属的水溶液来限定,该金属包括铜材料、镍材料、铊材料、钽材料、钛材料、钨材料、钴材料、合金材料和复合金属材料中的一种。
10.如权利要求1所述的用于电镀晶片表面的电镀装置,其中第二邻近头下方的流体是由一种或多种流体限定,并且该流体选自异丙醇(IPA)、电解液和水。
11.如权利要求1所述的用于电镀晶片表面的电镀装置,其中局部金属电镀限制流体体积在第一邻近头下方的区域内,该区域小于整个晶片表面。
12.如权利要求1所述的用于电镀晶片表面的电镀装置,其中涡流传感器能够监测第一邻近头下方的局部金属电镀。
13.一种用于电镀晶片表面的电镀装置,包括:
被配置放在晶片表面上的第一邻近头,在邻近头和晶片表面之间能产生第一流体,该第一流体被充电作为阳极以在晶片表面上沉积金属层;和
被配置放在晶片表面上并与晶片表面物理接触的第二邻近头,第二邻近头通过垫产生物理接触以能除去至少部分金属层,在邻近头和晶片表面之间能产生第二流体,该第二流体被充电作为阴极以能够在晶片表面上进行非消耗的化学反应,其中当在晶片表面上沉积金属层时,在第一流体和第二流体之间限定电连接。
14.如权利要求13所述的用于电镀晶片表面的电镀装置,其中第一流体通过第一流体的电解性质提供与衬底的电连接,所述第一流体通过与正偏压电源的电接触被充电作为阳极。
15.如权利要求13所述的用于电镀晶片表面的电镀装置,其中第二流体通过第二流体的电解性质提供与衬底的电连接,所述第二流体通过与负偏压电源的电接触被充电作为阴极。
16.如权利要求13所述的用于电镀晶片表面的电镀装置,其中在第二邻近头下方,非消耗的化学反应通过产生补偿反应防止金属层的溶解。
17.如权利要求16所述的用于电镀晶片表面的电镀装置,其中非消耗的化学反应为由氧化过程的还原产生的补偿反应。
18.如权利要求13所述的用于电镀晶片表面的电镀装置,其中第一邻近头和第二邻近头上多个输入中的每一个都限定为圆形管道、环形环和不连续管道中的一个。
19.如权利要求13所述的用于电镀晶片表面的电镀装置,其中第一邻近头和第二邻近头上多个输出中的每一个都限定为圆形管道、环形环和不连续管道中的一个。
20.如权利要求13所述的用于电镀晶片表面的电镀装置,其中第一邻近头下方的流体是由一种或多种流体限定,并且该流体选自异丙醇(IPA)、电解液和能够电镀金属的电镀化学物质。
21.如权利要求20所述的用于电镀晶片表面的电镀装置,其中电镀化学物质可由用于沉积金属的水溶液来限定,沉积金属包括铜材料、镍材料、铊材料、钽材料、钛材料、钨材料、钴材料、合金材料和复合金属材料中的一种。
22.如权利要求13所述的用于电镀晶片表面的电镀装置,其中第二邻近头下方的流体是由一种或多种流体限定,并且该流体选自异丙醇(IPA)、电解液、水和不含磨料的反应性化学物质。
23.如权利要求13所述的用于电镀晶片表面的电镀装置,其中局部金属电镀限制流体体积在第一邻近头下方的区域内,该区域小于整个晶片表面。
24.如权利要求13所述的用于电镀晶片表面的电镀装置,还包括:
能监测第一邻近头下方局部金属电镀的涡流传感器。
25.如权利要求13所述的用于电镀晶片表面的电镀装置,其中垫包括用于平整第二邻近头下方金属层厚度差异的抛光垫。
26.如权利要求25所述的用于电镀晶片表面的电镀装置,其中由第二邻近头上多个输入供应的不含磨料的反应性化学物质被施加到抛光垫上。
27.如权利要求13所述的用于电镀晶片表面的电镀装置,还包括:
控制第二邻近头下方金属层厚度差异平整化的散射计系统。
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- 2004-05-24 CN CN2010102027195A patent/CN101880902A/zh active Pending
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MY136159A (en) | 2008-08-29 |
WO2005005692A1 (en) | 2005-01-20 |
JP2010216015A (ja) | 2010-09-30 |
JP4828417B2 (ja) | 2011-11-30 |
KR101136773B1 (ko) | 2012-04-19 |
TWI248132B (en) | 2006-01-21 |
CN1842618A (zh) | 2006-10-04 |
US7947157B2 (en) | 2011-05-24 |
US7153400B2 (en) | 2006-12-26 |
CN101880902A (zh) | 2010-11-10 |
JP2010236090A (ja) | 2010-10-21 |
EP1639156A1 (en) | 2006-03-29 |
US20060260932A1 (en) | 2006-11-23 |
TW200501270A (en) | 2005-01-01 |
US20040178060A1 (en) | 2004-09-16 |
JP2007521391A (ja) | 2007-08-02 |
US20110155563A1 (en) | 2011-06-30 |
KR20060063808A (ko) | 2006-06-12 |
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