TWI248132B - Apparatus and method for depositing and planarizing thin films of semiconductor wafers - Google Patents

Apparatus and method for depositing and planarizing thin films of semiconductor wafers Download PDF

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TWI248132B
TWI248132B TW093115954A TW93115954A TWI248132B TW I248132 B TWI248132 B TW I248132B TW 093115954 A TW093115954 A TW 093115954A TW 93115954 A TW93115954 A TW 93115954A TW I248132 B TWI248132 B TW I248132B
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wafer
head
current current
fluid
electroplating
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TW093115954A
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TW200501270A (en
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Mike Ravkin
John Boyd
Yezdi N Dordi
Fred C Redeker
Larios John De
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Lam Res Corp
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/026—Electroplating of selected surface areas using locally applied jets of electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/22—Electroplating combined with mechanical treatment during the deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

1248132 九、發明說明： 一、 【發明所屬之技術領域】 二、 【先前技術】 在電鍍期間，曰圓、畜#^门—了在/、中曰曰圓沉浸在電解液中。 且作為：極:==以;=:帶正: ί 形成一銅層，電解液通常為濃=== ，量的（濃度為鹏）專用有機添加物並;f ί 常被旋轉來促進均勻、：t: 其中其《去離子^1’ 至另一反應室，在
Li另卜的濕潤㈤）處理，以由其背面及斜邊m 物ϋίϊ另外的去離子水沖洗而移除濕潤製程之化學殘‘ (CMP) ^ 理步1+在晶圓處理過程中的各個濕潤處 釋行去離子水沖洗的經f步驟。因為電解液稀 在電口的Ϊ體設計之複雜程度’去離子水沖洗通常不 理台^門^^雜目_百分之五十的晶圓電鍍設備上之濕潤處 並i合辦加;^ ^如此對^ ®的產能造成相當大的負面衝擊， i tff 此外’為了直接將銅電鑛於阻障層上，必 將、曰2 電鑛之間的時間最小化。在表面活化後之沖洗與 將曰曰固傳妙m賴組所f之額外_，大幅地關了表面活化 1248132 步驟的效要。m u & 沖洗的方法。口&要—在·處理步驟之間不須進行去離子水 圓。ίϊ鍍一陰極，此需要將電源電連接到晶 ;：ΐί; t 1 ^ : ί ΐί =致的晶圓接觸電阻對均㈣ 在某些況$ ^共均勻的沉積作用’最好維持接觸點的潔淨。 操作的產率。1點m需魏外的步驟，此更限制了電鍍 觸雷t，銅麵巾的問題為雙極效應（biP— effeed^ ，電阻很㈣可觀翻。此效解致錄 在接 在StS經因此形成電鍍中晶圓與電源電性接觸。習 並ί 應。不幸地，無法完全密封且_點被污¥， 在電鑛製程中’接觸電阻必需藉著某些主動 % if,用接觸點到晶圓的表面時，會發生其他負面的物理問 、、二'接觸點位於晶圓的外圍區域（如晶圓U麵之外部 施加某些力來維持與晶圓—致的電性接觸。在某 ^， iit力I能造成晶圓上的缺陷，起因於某些材料&多孔低介 電吊數之介電膜）上的機械應力。 - 導體晶圓上之特徵尺寸持續的縮小，銅晶種層的 ^要減少，從約1_埃到小於埃。必須減少此晶種層厚声 來確保在此特徵上方之合理尺寸的開口，如此可在銅電鑛製程又 填滿無孔洞之娜。因為晶種層之角色在於電鍍時將電鑛電流 布到整個晶圓，因此-較薄之電阻晶種層會產生反應室中的 問題’該反應室被設計絲均自電鑛靠近晶圓翻上之接觸點。 1248132 該弟二流體被供電作為—陰極且絲在該 耗性化學反應。當沉積該金屬層於該晶圓表=上進=非消 成於該第一流體與第二流體之間。該第二鄰近頭；著―：接形 積層產生物理酬叫除至少—赌找^^者—墊與該沉 本發明有許多優點。尤，實施 二 鑛的活化區域並改善化學替換。局部減少電 善沉積的均勻性。現場膜厚控制與平坦化可層3並改 理中減少晶圓傳送的次數與將數個操作整合精=處 明原則性範例的附圖將會更清楚。 兄月亚配合祝明本發 四、【實施方式】 本發明揭露用於電鍍晶圓表面的方法盥— 如 ” 1 了對本發明提供全盤性的了解，因$載ms ，田，’本發明亦可能被實施。在其::例::或j 有本發明’為人熟知之製程操作便不詳細說明。’、、 声例之電鑛設備100之圖。具有晶種 接觸點曰2曰對晶圓1044二極，，電源124藉著電 環繞晶圓1G4 ^ 極。電接觸點132可被設為 ，的機械接觸點 '或複數個個別 所_ 著臂 _ 固定-或多個用於輪送或移除在電‘作來 管。當然，導管通道1〇5可藉著任何其他===二 1248132 結合^如捆在臂桿l〇3上等。在一實施例中，臂桿ι〇 鄰近頭102在晶圓1〇4上以方向12〇移動之系統的J於 鄰近頭102之移動可被設計為以任何方式來 = ，應了解本系統僅為例示性，任何適當型式且可使頭二土〇4°此 圓的結構都可使用。舉例來說，當晶圓被旋轉時，鄰晶 在晶圓104之中央開始且逐漸線性移動至外 、可 例:，鄰近頭！02可控制於一固定晶圓之上， 方疋轉，或以—可處理晶社所有部分之方式在晶圓上=方J來 -貫施例中，鄰近頭1〇2可利用往復運動來掃描晶圓^ = 上由晶端往晶酿向相_另 可 f線
:巧動=。此運動亦可為任何適當且如使用要 Z 此運動中，需要使電鑛操作在晶圓1。4之 言料層。關於鄰近頭102與電鑛技術之功能的細料 電鍍設備的局部金屬電鍍示於圖1Β。 ，電鑛意指定義-鄰近_下方且金屬， Γ斤102下方之區域小於晶圓104之表面區ΐ因此 ’ ί部金屬電鑛僅發生在鄰近頭搬之下方 要移動到ί圓1〇4 ί ί==之=3 ^近頭⑽需 近頭102可*臂才旱1〇3狀在例不性的貫施例中，鄰 性方法。例如，可移動曰圓^ 3一移動鄰近頭1〇2之示範 層106形成於其上可能有利於某些例子。；為=晶； 1248132 之ί: ’其:利用習知技術來濺鍍或沉積。其後， 二曰插1、1 η/乂。120行進橫過晶圓104時，沉積層108形成 ί 上=積層⑽係藉著由電解液llG所達成之電化 二二/f ’電解液110包含於一形成於鄰近頭102與晶種層 非曰種1 ί半月^6中。在另一實施例中，沉積層108可形成於 非曰曰種層上。此種層之例子可為阻障層或其他材料層。 圖1C為依據本發明一實施例之鄰近頭搬之底視圖。鄰近頭 具有複數個輸人112a與112b及輸出me。此複數個輸入112a 、以及複數個輸出112(：可由一或多個個別導管來形成。各 =官在製造鄰近頭102本體時可由機器或塑形來做出。在另一實 施例中，複數個輸入112&與112b、以及輸出n2c可由環狀物來 形成，其可使流體以與導管相同的方式來輸送。如熟知此項技藝 者可了解的，對於複數個輸入112&與112b、以及輸出112c之特 殊結構的選擇可採用許多物理型式及形狀。然而，對於所選擇的 形式或形狀來說，必需可有效的藉著輸入來傳送流體並藉著輸出 來移出流體。因此，在一實施例中，晶圓104在除了鄰近頭1〇2 下方的區域外之所有區域均保持乾燥。 、如示，電鍍化學品藉著複數個輸入112b來供應，其可達成鄰 近碩102底下之局部金屬電鍍。電鍍化學品可設計用來沉積銅， 然而’可視特殊的應用（即所需之金屬材料的種類）以其他電鍍 化學品來取代。電鍍化學品可由一用於沉積金屬、合金、或複合 金屬材料之水溶液來限定。在一實施例中，所沉積的金屬可包括 (但不限於）銅、鎳、鉈（T1)、鈕、鈦、鎢、鈷、合金、複合金 屬等材料之其中一種。 電鍍化學品最好限制於半月形116中，其可形成為一位於晶 種層106以上鄰近頭1〇2下方之薄流體層。為了要更進一步限制 ，形成半月形116，藉著複數個輸入112a來供應異丙醇（IPA)蒸 氣。半月形116的厚度可基於所需之應用而改變。在一實施例中， 半月形厚度的範圍可在約〇· 1 mm到約1 〇 jnni。因此’鄰近頭102 1248132 收下表面處所利用的，「接近」一詞形成了鄰近頭 月形形成。山f面之間的間隔’而此間隔應足夠使流體半 -112& 之化電鍍材料係藉紐於電解液110中 將鄰近頭1^02二而J解51。係由複數個輸人112b所供應。 鄰近頭102電;極有利於此化學反應。在一例子中， 晶種層106減少σ電源122 °為了要達成電鑛，要在 受匕 中的離子，而晶種層106透過電接觸點132
供電成為—陰極。此化學反應產生—金屬層， i個輸出^^層除⑽。反朗產物與_反應物_由複 人$3-百中’可將一渦流（eddycurrent)感測器114整 口 ^近頭102。渴流感測器114用來決定金屬層的存在與厚产， =來測定特㈣程結束的時間（如終點 中、，“ 程=層108的厚度。依此方式，可達：屬材】 7，，也利用其他可測量沉積層108厚度的技術。 、；坪、、、田之渴流感測器功能的說明可參考美國專利申請宰第 10/186472 ^，integration of Sensor
emiconduftor ProcessmgTools」，係西元 2〇〇2 年六月 ％ 日 在此併入參考。 顯不似康本發明另一實施例之電鑛與研磨系統ι〇ι。在 此例中，、鄰近頭102裝配鱗磨⑸％，其可幫助平坦化沉積層 =8:由複數織人n2a與112b所供應之無研純反應性化學品 被施加到可促進平坦化層108，之研磨墊15〇。研磨墊15〇可由任 適當材料製成，只要研磨塾材料中的通道可使化學品流體通過。 在-例中’此材料可為多孔性高分子材料，類似那些常用於 機械研磨（CMP)設備t的材料。舉例來說，其他材料可包含聚 胺醋（polyurethane)化合物、固定的研磨性材料，如Minne啊us 11 1248132
Minnesota之3M所生產的MWR64或MWR69等。在一示 作中，金屬材料的沉積幾乎與藉由研磨墊15〇所達成之研 本 生。在另一實施例中，磨可利用用來沉積金屬材:之： 同的鄰^頭102來實施。在另-實施例中，電鑛頭與研磨頭可為 獨立的零件，其具有研磨頭附加電鍍頭。然而，研磨可沉二 ^後-較晚的時間點發生。可以了解的-，實際上沉積與研磨$ 視所需的應用來麵。藉著交替電鑛與平坦化步驟:、 同Λ進订電鍵與平坦化，可移除平坦度的差異與不須要之 過爹材料。 卢新ΐ，^明依據本發明一實施例之無接觸式電鑛設備200。此 處=利用之無接觸式電鍍設備為一利用電解液接觸之設備。在此 $ ’鄰近頭1〇2受臂桿1〇3支持而非常接近晶目1〇4,以產生半 ί曰i。/此說明中，如上所述，#晶圓10411定於支架130上 暴露於半月形116。鄰近頭102藉著與正電源⑵ 被ί、电以作為-陽極。此外，一第二鄰近頭1〇2,受臂桿1〇3 乍為一可促進鄰近頭102所進行之電鍍的輔助設施， 之f4表面移除材料。臂桿103可為固定鄰近頭ι〇2 、斤頭二，或為一另外的臂桿。在此替代性實施例中，第二鄰 把出於二财負向偏壓電源124來供電作為—陰極。半月形116， 鄰近頭搬’與晶種層106之間。半月形U6,所致使之 ΐΐίϊί形成半月形116,本身之化學品的效果。半月形116,之 不犯性化學特徵說明於下。 說明-無接觸式電鑛設備勘所利用之電解反應，其用 开，之金屬電鍛。如前所述’在鄰近頭102底下，半月 ί極來電解電鑛化學品’其透過正向偏壓電源122並藉由 由複i t116纟有藉由複數個輸入此所供應之ιρα蒸氣與藉 ，輸人112b,所供應之電解液110電缝化學品，如圖％所 例子中’鄰近頭102下方之複數個輪入mb提供電解溶 12 Ϊ248132 12^1ΒΫ 5 ^%JS 104 3Γ」肖，“κ t ==應c二以 類似的，祚盔^非消耗性電極，則反應為：2H2〇—〇2+2e—。 124來電極的第二鄰近頭搬，藉著負向偏壓電源 電解f Ϊ弟二鄰近頭1〇2,下方之第二半月形116,含有 敗蒸^與藉由由/數個輸入⑽所供應之 子中，益奴加认 輸入112bm供應之電解液110,。在一例 曰曰 e— 圓1〇4表面ΐϊϋ开貝1〇2’提供電解溶液，藉此在 〇卢14^丨士 Λ Μ 乂式為· Me [錯合物]-[錯合物]+ 乙二胺（etii 1 ’ 可為金屬離子，如銅，且X為2。錯合物可為 逆^，夹合==)或氨。遠離晶圓104表面之反應可為 。祕化學品 位小於CuW2+2e-之擇：使其反向電極化學品之電 ϋ ΐίΠ下方之電解液11G，可以其他添加物（如乙 建立於鄰^ 抑制銅的解離。電連接136透過晶種層106 解液l\〇盥i紐/，、弟二鄰近頭102,之間。透過此電連接136，電 之電鑛得百 110’連接而形成氧化還原對，並使鄰近頭102 盥箆要與日日51 0產生物理接觸。鄰近頭102 之結合频了與晶圓104無接觸式之連接，如 棱i、斤而2屬材料更有效率且更均勻的電鍍。 人列中’可將一渦流（eddycurrent)感測器114整 二田丄ΐ 1G2。渦流感測器114用來決定金屬層的存在與厚度， 測哭程結束的時間。在—實施例中，可藉著渦_ gift的Ϊ制應用。圖2D當沉積層108塗覆於晶圓⑽ 表面上之進展，其中第二鄰近頭殿，正位於沉積層觸之上。 13 1248132 圖3顯示依據本發明一實施例之電鑛與平坦化設備。鄰近 頭102以前述的方式來操作。第二鄰近頭1〇2，提供一電路徑，用 於如上述之電鑛操作。此外，在此例中，第二頭1〇2，裝配有研磨 墊150。研磨墊15〇用於平坦化沉積層1〇8而產生一平坦化層1〇8，。 ^磨墊150的存在不會抑制第二頭1〇2’之電連接性136。亦可藉由 複數個輸入112a與11%’輸送無研磨料反巍性化學品以幫助平坦 化製程。鄰近頭102,下方之平坦化層108，可與鄰近頭1〇2下方^ 沉積製程同時達成。
、、在另一貫施例中，平坦化可在一第三頭底下達成，其與第一 鄰近頭102與第二鄰近頭1〇2，獨立運作：藉由半月形之成形盥ιρΑ 的限制所輸送之流體可為一無研磨料之化學品，其可與整合至該 頭上之研磨墊一起促進平坦化。 乂 I 4在另一實施例中，具有研磨墊150之第二鄰近頭102,裝配有 〜4圖4 流糊’其提供—用於依據本發明之電鍍與平坦化 方法400。給定如上述圖1奴電鑛設備，操作員4
ΪΪ有晶圓_。在另—實施例中，晶圓也可 曰ill·、0，， 晶K可以許多方式傳送至晶圓支架。 5雷ΐΐ匕3一系列手動或自動的機械_，其受機械、真空 晶圓的方法所輔助。當晶圓置於支架上，操作 之區二人Γ積之材料（4〇4)。接著鄰近頭被安置於欲沉積 “ iin近頭之置放可被事先定義並藉由-自動程序所 透過上述’包含晶圓及臂桿運動中，或當流體 (姻）。④鄰=來提供時，對負責_之鄰近祕加偏壓 真空輸出;戶 =偏壓時’所選擇之流體輸入與 頦二it f方作用（410)，且沉積材料（412)。 頭會停iiimi414)可確認已達到所需厚度（416)。_ ^置，直到所需厚度已達到，其利用由現場測 14 1248132 里系統（414)所提供之反饋。在一例子中，測量系统可爲 渦流感測H祕的其中之…當然也可_其他厚度·技^之 -但達到所需的沉積厚度’貞責沉積之鄰近珊停止越的 與移除（420)。系統接著被設定至下一晶圓（422)。在一實施例 中，鄰近頭被移出該晶圓表面，而在其他實施例中，當頭停留於 該晶圓上時’晶圓本身被傳送。—但晶圓被移出，另—晶圓可被 安置於支架上以進行接下來的沉積。
如圖1D與圖3所述，如果系統裂配有平坦化構件，沉積材料 ，被平坦化_於在所需區域上均勻沉積。可侧現場測量技術 ^確認沉積層已平坦化⑽）。當達到足夠的平坦麟，流體輸 达與移除系統將停止（420)，且系統被設定至下一晶圓（422)。 在一f施例中，鄰近頭被移出該晶圓表面，而在其他實施例中， 當頭停留於該晶圓上時，晶圓本身被傳送。一但晶圓被移出，另 -晶圓可被安置於支架上崎行接下來的_與平坦化。
雜本發明為了提供清楚之瞭解，已參照實施例做了詳細之 況明、，惟其應不被認為其係限制性者。熟悉本技藝者參考本發明 j逑’當可輕易的對所揭露的實施例作各種修改。舉例來說， ΪΪΪ說明之電錄系統可用於任何形狀與大小的晶圓，如2〇〇麵 、l300mm的晶圓、平板等。因此任何未脫離本發明之範轉， '、4之修改或變更’均應包含於後附之t請專利範圍中。 五、【圖式簡單說明】 情ϋ藉著上述的詳細說明並配合關當可較容易暸解。為 了 月」相同的參考符號代表相同的結構元件。 圖1Α說明一電鍍設備； Ϊ出說明—在局部金屬電鍍中之電鍍設備； 圖lc為電鑛設備之鄰近頭之底視圖； 圖1D為一電鑛設備之透視圖，其裝配有一用於平坦化之研邊 15 1248132 圖2A說明一與晶圓無機械接觸之電鍍設傷； ^沈說明一與晶圓無機械接觸之電鑛所 應，其用於電鑛操作； 珣所利用之電解反 圖2C為無機械接觸之電鍍設備的橫剖面 面的界面處之電鍍頭與第二頭； Q其顯不在晶圓表 鍍頭ϊί上無ί械接觸之電鍍設備的橫剖面圖，其顯示當應用電 W、弟一頭到晶圓表面上時，沉積層之增長； 圖3為一電鍍與平坦化設備的橫剖面圖，其顯示在晶圓表面 的界面處之電鍍與電解頭，其中第二頭裝配有一用於平坦化之研 磨墊； 一 一 圖4為電鍛設備之操作的流程圖。 元件符號說明·· 100 電鍍設備 101 電鍍與研磨系統 102、102， 鄰近頭 103 臂桿 104 晶圓 105 導管通道 _ 106 晶種層 Ί08 沉積層 108’ 平坦化層 110、110， 電解液 112a輸入 112b、112b，輸入 112c輸出 114 渦流感測器 116、116， 半月形 120 方向 16 1248132 122 正電源 124 負向偏壓電源 130 支架 132 電接觸點 133 邊緣外區域 136 電連接 150 研磨墊 156 散射計系統 200 無接觸式電鍍設備 300 電鍍與平坦化設備 402-422 步驟

Claims (1)

1248132 申請專利範圍 被供千你f電鍍設備，用於魏之表面，_日^主 破供電作為一陰極，包含·· 曰®之表面可 一鄰近頭，可被供電作為一陽極， -個可由該晶圓表面移除亥複數個輸出之每 ，輪送至晶圓表面與由^^面二=㈡=被供電時， 之整個表面。 包鍍且该區域小於該晶圓 其中该晶圓藉著與 其中該接觸係對該 其中該鄰近頭藉著 其中該鄰近頭之複 —/·根據申請專利範圍第1項之電鍍設備 負向偏壓電源接觸而被供電作為陰極。 曰門t根？申請專利範81第2項之電鍍設備 曰曰®之一邊緣外區域為之。 4·根射請專利範圍第丨項之電錢設備 〃一正向偏壓電源電接觸而被供電作為陽極< 數個近頭之複 中之一。 y风局、壞狀物、與分離導管的其 6 々根據申請專利範圍第！項之電鑛，一 種或多種流體來形成，且該箄外r ;、中U係由一 解液、全屬：上Ji:勒伽由異丙醇(IPA)、電 成的族群。屬之私鍍化子"口、與無研磨料反應性化學品所組 由-利耗?第6項之電鍍設備，其中該電鍍化學品 钽、叙=貝至屬之水溶液所形成，該金屬包含銅、鎳、鉈（T1)、 —ϋ鈷、合金、與複合金屬等材料之其中之-。 數鍊專利範圍第1項之電鍍設備，其中該鄰近頭之複 $中的母-個被形成為圓形導管、環狀物、與分離導管的 18 1248132 二 備，其中 1 流(- 助整之賴設備，其中卜研磨塾協 輸入圍㈣項之電毅備’其巾由該複數個 輸入所域之热研磨料反應性化學品施加到該研磨墊。 一^電鍍設備，用於電鍍一晶圓之表面，包含： 料繁近頭，配置_晶®表面上，—第—流體可被產生 極^在^ ίΐ與該晶圓表面m流體被供電作為一陽 極以在^曰曰圓表面上沉積一金屬層； 例rjj近頭’配置於該晶®表面上，—第二流體可被產生 在ί曰iC表面之間，該第二流體被供電作為一陰極以 ίί:曰非消耗性化學反應，其中當沉積該金屬層 曰1曰3\在§㈣—流體與第二流體之間形成電連接。 ^根據申請專利範圍第12項之電鑛設備，其中一 液特性提供電偶合至該晶圓，且該第-流體萨著I? 正向偏壓電源電連接而被供電作為陽極。 s ” 透過範關12項之紐設備’其巾鄕二流體 ^過其論液特性提供電偶合至該晶圓，且該第二 盘一 負向偏壓電源電連接而被供電作為陰極。 曰” 进頭15古根據專利範圍第12項之電鐘設備，其中在該第二鄰 來避免該金屬層之化學反應藉著產生一補償（offsetting)反應 化據申=利範圍第15項之電鑛設備，其中該非消耗性 予反應，其藉著一氧化步驟之還原作用來產生。 •根據申請專利範圍第I2項之電鍍設備，其中該第一鄰近 19 1248132 18·根據申請專利範圍第12項之泰< 頭與第二鄰近頭之複數個輪出的每鍍設備，其中該第一鄰近 物、與分離導管的其中之一。 *被形成為圓形導管、環狀 19.根據申請專利範圍第12項之♦ < 頭下方之流體由一或多種流體來形成肴，其中該第一鄰近 丙醇（ΙΡΑ)、電解液、與可電鍍金屬之^為等^1體係選自於由異 20·根據申請專利範圍第19項之上鍍$學品所組成的族群、。 品由一用來沉積金屬之水溶液所形成包鍍^又備，其中該電鍍化學 ㈤、钽、鈦、鎢、鈷、合金、與合 ==銅、鎳、錄 21·根據申請專利範圍第12項之+金^專材料之其中之一。 頭下方之流體由一或多種流體來形成电^設^，其中該第二鄰近 丙醇（ΙΡΑ)、電解液、與水所組成的族君、/亥等流體係選自於由異 22·、根據申請專利範圍$ 項之電二設 鍍將該流體之容積局限在一位於兮第一抑 -中局部金屬電 該區域小於該晶圓之整個表面。、〜一郇近頭下方之區域中，且 23·根據申請專利範圍第12項之雷 current) 備，用於電鍍—晶圓之表面，ΐί 於該鄰近猶該晶圓表面之間 f ·體可被產生 在該晶圓表面上沉積—金屬層；4 *體被供電作為一陽極以 一第二鄰近頭，配置於該晶 ;第二=著，產生物理接觸以移二 第二^體被ί 生„難該晶81表面之間，i 學反應，其中♦狀，U表面上進彳亍—非雜性化 與第二流體之間形成電連接。 ^均，在該弟-流體 透過^ΐ據令請專利範圍第24項之電錢設備，其中該第-〜 4僅特性提供電偶合至該晶圓，且該第_流體藉著 20 1248132 正向偏壓電源電連接而被供細 根據申請專利範圍第、' 二 f過其電解液特性提供電偶合至节其中該第二流體 負^壓電^連接而被供電作=^且_二流體藉著與一 近碩下方，該非消耗性化學 ’其中在該第二鄰 來避免該金屬層 之分解。應藉著產生一補償（_論g) ^應 28·根據申請專利範圍 化學反應為i償反應，項備，其中該非消耗性 攻根據申請專概圍第^:氧^步驟^還原作用來產生。 頭與第二鄰近頭之複數個輪該第-鄰近 狀物、與分離導管的其中之—。之母一個被形成為圓形導管 '環 30.根據申請專利範圍第24 頭與第二鄰近頭之複數個輪屮由鍍汉備，其中該第一鄰近 狀物、與分離導管的其中之=中之母—個被形成為圓形導管、環 頭下Ϊ之之電鑛設備:其中該第一鄰近 群。 一了兔鍍金屬之電鍍化學品所组成的族 σ二用1=1專麗利範，31項之電鐘設備，其中該電錄化學 1貝至屬之水〉谷液所形成，該金屬包含銅、鎳、鉈 ^根據申合金、與複合金屬等材料之其中之—。 士骑/i專利乾圍弟24項之電鍍設備，其中該第二鄰近 碩下方：體偏-種或多顯體所形成，且鮮流體係選 由異丙醇（IPA)、電解液、水、與無研磨料反應性化學品所組成 的族群。 Λ ϋ據t專利範圍$24項之電鍍設備，其中局部金屬電 鍍將該μ體之谷積局限在一位於該第一鄰近頭下方之區域中，且 該區域小於该晶圓之整個表面。 21 1248132 35.根據申請專利範圍第24項之電鍍設備·，更包含： 一渦流（eddy current)感測器，用以監測在該第一鄰近頭 方之局部金屬電鍍。、 讲麻圍第24項之電鑛設備，其中該墊包含-…n 4铋二平该第二鄰近頭下方之該金屬層之厚度差異。 、一 ·+根據申睛專利範圍第36項之電鍍設備，其中由該第二鄰 墊 近頭之複數個輸入所供應之無研磨料反應性化學品施加到該研磨 根據申請專利範圍第24項之電鍍設備，更包含：
一散射計系統，用以控制該第二鄰近頭下方之該金屬層之厚 度差異的整平。 十一、圖式：
22
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CN101880902A (zh) 2010-11-10
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EP1639156A1 (en) 2006-03-29
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