CN1822366B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1822366B
CN1822366B CN2006100074814A CN200610007481A CN1822366B CN 1822366 B CN1822366 B CN 1822366B CN 2006100074814 A CN2006100074814 A CN 2006100074814A CN 200610007481 A CN200610007481 A CN 200610007481A CN 1822366 B CN1822366 B CN 1822366B
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CN
China
Prior art keywords
area
internal circuit
semiconductor device
wiring
chip
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Expired - Fee Related
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CN2006100074814A
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English (en)
Chinese (zh)
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CN1822366A (zh
Inventor
铃木进也
樋口和久
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Synaptics Japan GK
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Renesas Technology Corp
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Publication of CN1822366A publication Critical patent/CN1822366A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K11/00—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves
    • F16K11/02—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit
    • F16K11/06—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit comprising only sliding valves, i.e. sliding closure elements
    • F16K11/065—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit comprising only sliding valves, i.e. sliding closure elements with linearly sliding closure members
    • F16K11/07—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit comprising only sliding valves, i.e. sliding closure elements with linearly sliding closure members with cylindrical slides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/02—Preparation of oxygen
    • C01B13/0229—Purification or separation processes
    • C01B13/0248—Physical processing only
    • C01B13/0259—Physical processing only by adsorption on solids
    • C01B13/0262—Physical processing only by adsorption on solids characterised by the adsorbent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/04—Purification or separation of nitrogen
    • C01B21/0405—Purification or separation processes
    • C01B21/0433—Physical processing only
    • C01B21/045—Physical processing only by adsorption in solids
    • C01B21/0455—Physical processing only by adsorption in solids characterised by the adsorbent
    • C01B21/0466—Zeolites
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K31/00—Actuating devices; Operating means; Releasing devices
    • F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
    • F16K31/04—Actuating devices; Operating means; Releasing devices electric; magnetic using a motor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN2006100074814A 2005-02-15 2006-02-14 半导体器件 Expired - Fee Related CN1822366B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005037129A JP4846244B2 (ja) 2005-02-15 2005-02-15 半導体装置
JP037129/2005 2005-02-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201010142391A Division CN101807573A (zh) 2005-02-15 2006-02-14 半导体器件

Publications (2)

Publication Number Publication Date
CN1822366A CN1822366A (zh) 2006-08-23
CN1822366B true CN1822366B (zh) 2010-05-12

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CN2006100074814A Expired - Fee Related CN1822366B (zh) 2005-02-15 2006-02-14 半导体器件
CN201010142391A Pending CN101807573A (zh) 2005-02-15 2006-02-14 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201010142391A Pending CN101807573A (zh) 2005-02-15 2006-02-14 半导体器件

Country Status (5)

Country Link
US (2) US7629652B2 (enExample)
JP (1) JP4846244B2 (enExample)
KR (1) KR20060092093A (enExample)
CN (2) CN1822366B (enExample)
TW (1) TWI430431B (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4846244B2 (ja) * 2005-02-15 2011-12-28 ルネサスエレクトロニクス株式会社 半導体装置
JP4186970B2 (ja) 2005-06-30 2008-11-26 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4010336B2 (ja) 2005-06-30 2007-11-21 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4010334B2 (ja) * 2005-06-30 2007-11-21 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4951902B2 (ja) * 2005-06-30 2012-06-13 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4661400B2 (ja) 2005-06-30 2011-03-30 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4151688B2 (ja) * 2005-06-30 2008-09-17 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4552776B2 (ja) * 2005-06-30 2010-09-29 セイコーエプソン株式会社 集積回路装置及び電子機器
KR100828792B1 (ko) 2005-06-30 2008-05-09 세이코 엡슨 가부시키가이샤 집적 회로 장치 및 전자 기기
JP4830371B2 (ja) 2005-06-30 2011-12-07 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4010335B2 (ja) 2005-06-30 2007-11-21 セイコーエプソン株式会社 集積回路装置及び電子機器
US7755587B2 (en) 2005-06-30 2010-07-13 Seiko Epson Corporation Integrated circuit device and electronic instrument
JP4665677B2 (ja) 2005-09-09 2011-04-06 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4586739B2 (ja) * 2006-02-10 2010-11-24 セイコーエプソン株式会社 半導体集積回路及び電子機器
JP5123510B2 (ja) * 2006-09-28 2013-01-23 ルネサスエレクトロニクス株式会社 半導体装置
JP4882700B2 (ja) * 2006-11-22 2012-02-22 セイコーエプソン株式会社 集積回路装置及び電子機器
JP5147234B2 (ja) 2006-12-28 2013-02-20 パナソニック株式会社 半導体集積回路装置
JP5234717B2 (ja) * 2007-03-20 2013-07-10 ローム株式会社 半導体集積回路装置
JP5097096B2 (ja) * 2007-12-28 2012-12-12 パナソニック株式会社 半導体集積回路
JP5301231B2 (ja) * 2008-09-30 2013-09-25 株式会社テラミクロス 半導体装置
JP5395407B2 (ja) * 2008-11-12 2014-01-22 ルネサスエレクトロニクス株式会社 表示装置駆動用半導体集積回路装置および表示装置駆動用半導体集積回路装置の製造方法
JP2010224084A (ja) * 2009-03-23 2010-10-07 Hitachi Displays Ltd 液晶表示装置
JP5503208B2 (ja) * 2009-07-24 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置
JP5315186B2 (ja) 2009-09-18 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5746494B2 (ja) 2010-11-24 2015-07-08 ルネサスエレクトロニクス株式会社 半導体装置、液晶ディスプレイパネル及び携帯情報端末
CN103503122B (zh) * 2011-05-24 2016-05-18 索尼公司 半导体装置
CN104715082A (zh) * 2013-12-12 2015-06-17 北京华大九天软件有限公司 一种平板显示器设计中通过重复的特征形状实现窄边框布线轮廓的翼状布线方法
KR102272214B1 (ko) * 2015-01-14 2021-07-02 삼성디스플레이 주식회사 표시 장치
JP6664897B2 (ja) * 2015-07-22 2020-03-13 ルネサスエレクトロニクス株式会社 半導体装置
US11227862B2 (en) 2017-02-28 2022-01-18 Murata Manufacturing Co., Ltd. Semiconductor device
JP2018142688A (ja) * 2017-02-28 2018-09-13 株式会社村田製作所 半導体装置
CN108511411B (zh) 2017-02-28 2021-09-10 株式会社村田制作所 半导体装置
CN109377874B (zh) * 2018-12-21 2021-07-09 上海中航光电子有限公司 显示面板和显示装置
JP7451362B2 (ja) * 2020-09-11 2024-03-18 キオクシア株式会社 半導体装置及び配線構造

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514892A (en) * 1994-09-30 1996-05-07 Motorola, Inc. Electrostatic discharge protection device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153844A (ja) * 1993-12-01 1995-06-16 Nec Corp 半導体集積回路装置
KR100299390B1 (ko) * 1995-06-16 2001-10-27 가나이 쓰도무 좁은액자에적합한액정표시장치
KR100197989B1 (ko) * 1996-06-24 1999-06-15 김영환 정전기 보호회로를 구비한 반도체장치
JP3948822B2 (ja) * 1998-04-21 2007-07-25 ローム株式会社 半導体集積回路
JP3693843B2 (ja) * 1999-02-25 2005-09-14 株式会社日立製作所 液晶表示装置
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
JP4017060B2 (ja) * 2000-09-06 2007-12-05 株式会社ルネサステクノロジ 半導体装置
JP4298179B2 (ja) 2001-02-13 2009-07-15 セイコーインスツル株式会社 半導体装置
JP4907797B2 (ja) * 2001-08-21 2012-04-04 ルネサスエレクトロニクス株式会社 半導体集積回路および液晶表示装置
JP2004006691A (ja) * 2002-03-29 2004-01-08 Sanyo Electric Co Ltd 半導体集積回路装置
TW200305272A (en) * 2002-03-29 2003-10-16 Sanyo Electric Co Semiconductor integrated circuit device
JP4445189B2 (ja) * 2002-08-29 2010-04-07 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP2004296998A (ja) * 2003-03-28 2004-10-21 Matsushita Electric Ind Co Ltd 半導体装置
JP4428504B2 (ja) * 2003-04-23 2010-03-10 株式会社ルネサステクノロジ 半導体集積回路装置
JP5008840B2 (ja) * 2004-07-02 2012-08-22 ローム株式会社 半導体装置
JP4846244B2 (ja) * 2005-02-15 2011-12-28 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514892A (en) * 1994-09-30 1996-05-07 Motorola, Inc. Electrostatic discharge protection device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2004-95577A 2004.03.25

Also Published As

Publication number Publication date
KR20060092093A (ko) 2006-08-22
JP2006228770A (ja) 2006-08-31
US8294214B2 (en) 2012-10-23
JP4846244B2 (ja) 2011-12-28
US7629652B2 (en) 2009-12-08
US20100059882A1 (en) 2010-03-11
TWI430431B (zh) 2014-03-11
US20060180864A1 (en) 2006-08-17
CN1822366A (zh) 2006-08-23
CN101807573A (zh) 2010-08-18
TW200723498A (en) 2007-06-16

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