CN1771565A - 半导体存储器以及半导体存储器的操作方法 - Google Patents
半导体存储器以及半导体存储器的操作方法 Download PDFInfo
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- CN1771565A CN1771565A CN03826473.0A CN03826473A CN1771565A CN 1771565 A CN1771565 A CN 1771565A CN 03826473 A CN03826473 A CN 03826473A CN 1771565 A CN1771565 A CN 1771565A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4061—Calibration or ate or cycle tuning
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4062—Parity or ECC in refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4067—Refresh in standby or low power modes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
Description
Claims (48)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/010412 WO2005017914A1 (ja) | 2003-08-18 | 2003-08-18 | 半導体メモリおよび半導体メモリの動作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1771565A true CN1771565A (zh) | 2006-05-10 |
CN1771565B CN1771565B (zh) | 2010-05-05 |
Family
ID=34179394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03826473.0A Expired - Fee Related CN1771565B (zh) | 2003-08-18 | 2003-08-18 | 半导体存储器以及半导体存储器的操作方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7203115B2 (zh) |
EP (1) | EP1657723B1 (zh) |
JP (1) | JP4664208B2 (zh) |
CN (1) | CN1771565B (zh) |
WO (1) | WO2005017914A1 (zh) |
Cited By (12)
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CN102385936A (zh) * | 2011-09-16 | 2012-03-21 | 中国科学院微电子研究所 | 基于汉明码对静态随机存储器多位翻转进行容错的方法 |
CN101067972B (zh) * | 2007-04-23 | 2012-04-25 | 北京兆易创新科技有限公司 | 一种存储器检错纠错编码电路及利用其读写数据的方法 |
CN103680598A (zh) * | 2012-08-31 | 2014-03-26 | 爱思开海力士有限公司 | 存储器和包括存储器的存储系统 |
CN104981874A (zh) * | 2013-02-04 | 2015-10-14 | 美光科技公司 | 用于存储器的目标刷新的设备及方法 |
CN106469574A (zh) * | 2015-08-19 | 2017-03-01 | 爱思开海力士有限公司 | 存储器装置及其操作方法 |
CN106782633A (zh) * | 2016-03-26 | 2017-05-31 | 深圳星忆存储科技有限公司 | 动态随机存取存储器,储存数据及读取和刷新的方法 |
CN110352407A (zh) * | 2017-01-05 | 2019-10-18 | 德克萨斯仪器股份有限公司 | 纠错码存储器 |
CN111209129A (zh) * | 2019-12-27 | 2020-05-29 | 曙光信息产业股份有限公司 | 基于amd平台的内存优化方法和装置 |
CN112346901A (zh) * | 2019-08-06 | 2021-02-09 | 美光科技公司 | 具有时变错误率的存储器中的抢先式读取刷新 |
CN112992222A (zh) * | 2019-12-16 | 2021-06-18 | 华邦电子股份有限公司 | 应用于伪静态随机存取存储器的控制电路及其控制方法 |
WO2022057417A1 (zh) * | 2020-09-18 | 2022-03-24 | 长鑫存储技术有限公司 | 存储器 |
US11894089B2 (en) | 2020-09-18 | 2024-02-06 | Changxin Memory Technologies, Inc. | Memory with error checking and correcting unit |
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KR100776737B1 (ko) * | 2006-02-10 | 2007-11-19 | 주식회사 하이닉스반도체 | 반도체 메모리의 액티브 싸이클 제어장치 및 방법 |
US8069377B2 (en) | 2006-06-26 | 2011-11-29 | Micron Technology, Inc. | Integrated circuit having memory array including ECC and column redundancy and method of operating the same |
FR2903219A1 (fr) * | 2006-07-03 | 2008-01-04 | St Microelectronics Sa | Procede de rafraichissement d'un memoire vive dynamique et dispositif de memoire vive dynamique correspondant,en particulier incorpore dans un telephone mobile cellulaire |
US7522464B2 (en) * | 2006-07-26 | 2009-04-21 | Zmos Technology, Inc. | Dynamic memory refresh configurations and leakage control methods |
JP6072449B2 (ja) * | 2012-07-09 | 2017-02-01 | ルネサスエレクトロニクス株式会社 | 半導体記憶回路及びその動作方法 |
US9047978B2 (en) | 2013-08-26 | 2015-06-02 | Micron Technology, Inc. | Apparatuses and methods for selective row refreshes |
KR102185894B1 (ko) * | 2014-01-20 | 2020-12-03 | 에스케이하이닉스 주식회사 | 반도체 장치 |
JP2015219938A (ja) | 2014-05-21 | 2015-12-07 | マイクロン テクノロジー, インク. | 半導体装置 |
CN106326145A (zh) * | 2015-06-26 | 2017-01-11 | 深圳市中兴微电子技术有限公司 | 一种存储器的控制方法和装置 |
JP2017182854A (ja) | 2016-03-31 | 2017-10-05 | マイクロン テクノロジー, インク. | 半導体装置 |
KR20180079495A (ko) * | 2016-12-30 | 2018-07-11 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그의 동작 방법 |
US10490251B2 (en) | 2017-01-30 | 2019-11-26 | Micron Technology, Inc. | Apparatuses and methods for distributing row hammer refresh events across a memory device |
US10192608B2 (en) | 2017-05-23 | 2019-01-29 | Micron Technology, Inc. | Apparatuses and methods for detection refresh starvation of a memory |
WO2019092227A1 (en) * | 2017-11-13 | 2019-05-16 | Signify Holding B.V. | Control of power delivery to a dc-powered device |
US10580475B2 (en) | 2018-01-22 | 2020-03-03 | Micron Technology, Inc. | Apparatuses and methods for calculating row hammer refresh addresses in a semiconductor device |
WO2019222960A1 (en) | 2018-05-24 | 2019-11-28 | Micron Technology, Inc. | Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling |
US11152050B2 (en) | 2018-06-19 | 2021-10-19 | Micron Technology, Inc. | Apparatuses and methods for multiple row hammer refresh address sequences |
US10685696B2 (en) | 2018-10-31 | 2020-06-16 | Micron Technology, Inc. | Apparatuses and methods for access based refresh timing |
CN113168861B (zh) | 2018-12-03 | 2024-05-14 | 美光科技公司 | 执行行锤刷新操作的半导体装置 |
CN117198356A (zh) | 2018-12-21 | 2023-12-08 | 美光科技公司 | 用于目标刷新操作的时序交错的设备和方法 |
US10957377B2 (en) | 2018-12-26 | 2021-03-23 | Micron Technology, Inc. | Apparatuses and methods for distributed targeted refresh operations |
US10770127B2 (en) | 2019-02-06 | 2020-09-08 | Micron Technology, Inc. | Apparatuses and methods for managing row access counts |
US11043254B2 (en) | 2019-03-19 | 2021-06-22 | Micron Technology, Inc. | Semiconductor device having cam that stores address signals |
US11227649B2 (en) | 2019-04-04 | 2022-01-18 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of targeted refresh operations |
US11264096B2 (en) | 2019-05-14 | 2022-03-01 | Micron Technology, Inc. | Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits |
US11158364B2 (en) | 2019-05-31 | 2021-10-26 | Micron Technology, Inc. | Apparatuses and methods for tracking victim rows |
US11069393B2 (en) | 2019-06-04 | 2021-07-20 | Micron Technology, Inc. | Apparatuses and methods for controlling steal rates |
US11158373B2 (en) | 2019-06-11 | 2021-10-26 | Micron Technology, Inc. | Apparatuses, systems, and methods for determining extremum numerical values |
US10832792B1 (en) | 2019-07-01 | 2020-11-10 | Micron Technology, Inc. | Apparatuses and methods for adjusting victim data |
US11139015B2 (en) | 2019-07-01 | 2021-10-05 | Micron Technology, Inc. | Apparatuses and methods for monitoring word line accesses |
US11386946B2 (en) | 2019-07-16 | 2022-07-12 | Micron Technology, Inc. | Apparatuses and methods for tracking row accesses |
US10943636B1 (en) | 2019-08-20 | 2021-03-09 | Micron Technology, Inc. | Apparatuses and methods for analog row access tracking |
US10964378B2 (en) | 2019-08-22 | 2021-03-30 | Micron Technology, Inc. | Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation |
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JP2022036850A (ja) * | 2020-08-24 | 2022-03-08 | ラピスセミコンダクタ株式会社 | 半導体記憶素子、半導体記憶装置、およびシステムオンチップ |
US11222682B1 (en) | 2020-08-31 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for providing refresh addresses |
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US11222686B1 (en) | 2020-11-12 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh timing |
US11462291B2 (en) | 2020-11-23 | 2022-10-04 | Micron Technology, Inc. | Apparatuses and methods for tracking word line accesses |
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US11790974B2 (en) | 2021-11-17 | 2023-10-17 | Micron Technology, Inc. | Apparatuses and methods for refresh compliance |
US11688451B2 (en) | 2021-11-29 | 2023-06-27 | Micron Technology, Inc. | Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking |
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-
2003
- 2003-08-18 CN CN03826473.0A patent/CN1771565B/zh not_active Expired - Fee Related
- 2003-08-18 EP EP03818115A patent/EP1657723B1/en not_active Expired - Fee Related
- 2003-08-18 WO PCT/JP2003/010412 patent/WO2005017914A1/ja active Application Filing
- 2003-08-18 JP JP2005507761A patent/JP4664208B2/ja not_active Expired - Fee Related
-
2005
- 2005-11-03 US US11/265,229 patent/US7203115B2/en not_active Expired - Lifetime
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101067972B (zh) * | 2007-04-23 | 2012-04-25 | 北京兆易创新科技有限公司 | 一种存储器检错纠错编码电路及利用其读写数据的方法 |
CN102385936A (zh) * | 2011-09-16 | 2012-03-21 | 中国科学院微电子研究所 | 基于汉明码对静态随机存储器多位翻转进行容错的方法 |
CN103680598B (zh) * | 2012-08-31 | 2018-01-09 | 爱思开海力士有限公司 | 存储器和包括存储器的存储系统 |
CN103680598A (zh) * | 2012-08-31 | 2014-03-26 | 爱思开海力士有限公司 | 存储器和包括存储器的存储系统 |
CN104981874A (zh) * | 2013-02-04 | 2015-10-14 | 美光科技公司 | 用于存储器的目标刷新的设备及方法 |
CN106469574A (zh) * | 2015-08-19 | 2017-03-01 | 爱思开海力士有限公司 | 存储器装置及其操作方法 |
CN106782633A (zh) * | 2016-03-26 | 2017-05-31 | 深圳星忆存储科技有限公司 | 动态随机存取存储器,储存数据及读取和刷新的方法 |
CN106782633B (zh) * | 2016-03-26 | 2019-12-17 | 深圳星忆存储科技有限公司 | 动态随机存取存储器,储存数据及读取和刷新的方法 |
CN110352407A (zh) * | 2017-01-05 | 2019-10-18 | 德克萨斯仪器股份有限公司 | 纠错码存储器 |
CN112346901A (zh) * | 2019-08-06 | 2021-02-09 | 美光科技公司 | 具有时变错误率的存储器中的抢先式读取刷新 |
CN112992222A (zh) * | 2019-12-16 | 2021-06-18 | 华邦电子股份有限公司 | 应用于伪静态随机存取存储器的控制电路及其控制方法 |
CN112992222B (zh) * | 2019-12-16 | 2024-01-23 | 华邦电子股份有限公司 | 应用于伪静态随机存取存储器的控制电路及其控制方法 |
CN111209129A (zh) * | 2019-12-27 | 2020-05-29 | 曙光信息产业股份有限公司 | 基于amd平台的内存优化方法和装置 |
WO2022057417A1 (zh) * | 2020-09-18 | 2022-03-24 | 长鑫存储技术有限公司 | 存储器 |
US11894089B2 (en) | 2020-09-18 | 2024-02-06 | Changxin Memory Technologies, Inc. | Memory with error checking and correcting unit |
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EP1657723A4 (en) | 2007-10-31 |
CN1771565B (zh) | 2010-05-05 |
WO2005017914A1 (ja) | 2005-02-24 |
US7203115B2 (en) | 2007-04-10 |
JPWO2005017914A1 (ja) | 2006-10-12 |
US20060056258A1 (en) | 2006-03-16 |
JP4664208B2 (ja) | 2011-04-06 |
EP1657723B1 (en) | 2013-03-06 |
EP1657723A1 (en) | 2006-05-17 |
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