CN1708832A - 使用覆盖层的无定形材料相变方法 - Google Patents
使用覆盖层的无定形材料相变方法 Download PDFInfo
- Publication number
- CN1708832A CN1708832A CNA200380102493XA CN200380102493A CN1708832A CN 1708832 A CN1708832 A CN 1708832A CN A200380102493X A CNA200380102493X A CN A200380102493XA CN 200380102493 A CN200380102493 A CN 200380102493A CN 1708832 A CN1708832 A CN 1708832A
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- China
- Prior art keywords
- amorphous materials
- phase
- change method
- metal
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
Description
Claims (33)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0068994 | 2002-11-08 | ||
KR1020020068994 | 2002-11-08 | ||
KR10-2002-0068994A KR100470274B1 (ko) | 2002-11-08 | 2002-11-08 | 덮개층을 이용한 비정질 물질의 상 변화 방법 |
PCT/KR2003/002362 WO2004042805A1 (en) | 2002-11-08 | 2003-11-06 | Phase transition method of amorphous material using cap layer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1708832A true CN1708832A (zh) | 2005-12-14 |
CN1708832B CN1708832B (zh) | 2014-12-31 |
Family
ID=36594214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200380102493.XA Expired - Fee Related CN1708832B (zh) | 2002-11-08 | 2003-11-06 | 使用覆盖层的无定形材料相变方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7618852B2 (zh) |
KR (1) | KR100470274B1 (zh) |
CN (1) | CN1708832B (zh) |
AU (1) | AU2003276744A1 (zh) |
WO (1) | WO2004042805A1 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100600874B1 (ko) | 2004-06-09 | 2006-07-14 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
KR100578787B1 (ko) | 2004-06-12 | 2006-05-11 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US7566602B2 (en) | 2004-06-12 | 2009-07-28 | Samsung Electronics Co., Ltd. | Methods of forming single crystalline layers and methods of manufacturing semiconductor devices having such layers |
KR100623689B1 (ko) * | 2004-06-23 | 2006-09-19 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
KR100712101B1 (ko) * | 2004-06-30 | 2007-05-02 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
KR100666564B1 (ko) | 2004-08-04 | 2007-01-09 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
TWI268122B (en) * | 2005-01-25 | 2006-12-01 | Au Optronics Corp | Semiconductor structure having multilayer of polysilicon and display panel applied with the same |
KR100726895B1 (ko) * | 2005-08-02 | 2007-06-14 | 경희대학교 산학협력단 | 금속이 내포된 단백질을 이용한 다결정 실리콘 박막형성방법 |
KR100700494B1 (ko) * | 2005-08-25 | 2007-03-28 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
KR100770269B1 (ko) | 2006-05-18 | 2007-10-25 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
KR20080015666A (ko) * | 2006-08-16 | 2008-02-20 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR100839735B1 (ko) | 2006-12-29 | 2008-06-19 | 삼성에스디아이 주식회사 | 트랜지스터, 이의 제조 방법 및 이를 구비한 평판 표시장치 |
KR20080111693A (ko) | 2007-06-19 | 2008-12-24 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR101049799B1 (ko) * | 2009-03-03 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
KR101015849B1 (ko) * | 2009-03-03 | 2011-02-23 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
KR101041141B1 (ko) | 2009-03-03 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR20100100187A (ko) * | 2009-03-05 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 |
KR101049801B1 (ko) | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치 |
KR101056428B1 (ko) | 2009-03-27 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치 |
KR101094295B1 (ko) | 2009-11-13 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법 |
KR101049802B1 (ko) | 2009-11-20 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터, 그를 구비하는 유기전계발광표시장치 및 그들의 제조방법 |
CN102129962A (zh) * | 2010-10-28 | 2011-07-20 | 广东中显科技有限公司 | 一种可调控的金属诱导多晶硅薄膜制造方法 |
KR20140003154A (ko) * | 2012-06-29 | 2014-01-09 | 에스케이하이닉스 주식회사 | 반도체 장치 제조 방법 |
WO2019027902A1 (en) * | 2017-07-31 | 2019-02-07 | Corning Incorporated | FLASH LAMP RECOVERY METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON |
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JPH084067B2 (ja) * | 1985-10-07 | 1996-01-17 | 工業技術院長 | 半導体装置の製造方法 |
JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
JP3535205B2 (ja) * | 1993-03-22 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
JPH06313899A (ja) * | 1993-04-30 | 1994-11-08 | Sharp Corp | 液晶表示装置 |
JP3621151B2 (ja) * | 1994-06-02 | 2005-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH10163112A (ja) * | 1996-12-04 | 1998-06-19 | Sony Corp | 半導体装置の製造方法 |
US6477135B1 (en) * | 1998-03-26 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and method for recording and reproduction information thereon |
ATE245026T1 (de) | 1998-05-15 | 2003-08-15 | Wyeth Corp | 2-phenyl-1-(-(2-aminoethoxy)-benzyl -indol und estrogen als kombinationpräparate |
JP3866016B2 (ja) * | 1999-07-02 | 2007-01-10 | Tdk株式会社 | 光情報媒体およびその再生方法 |
DE10014581C2 (de) * | 2000-03-27 | 2002-05-02 | Progress Werk Oberkirch Ag | Stabilisierungsstrebe für ein Fahrwerk eines Fahrzeugs sowie Verfahren zur Herstellung derselben |
KR100424481B1 (ko) | 2000-06-24 | 2004-03-22 | 엘지전자 주식회사 | 디지털 방송 부가서비스 정보의 기록 재생장치 및 방법과그에 따른 기록매체 |
KR100650343B1 (ko) * | 2000-12-29 | 2006-11-27 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 및 그 제조방법 |
KR100653263B1 (ko) * | 2000-12-29 | 2006-12-01 | 엘지.필립스 엘시디 주식회사 | 실리콘막의 결정화 방법 |
JP4718700B2 (ja) * | 2001-03-16 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6475857B1 (en) * | 2001-06-21 | 2002-11-05 | Samsung Electronics Co., Ltd. | Method of making a scalable two transistor memory device |
KR20030008752A (ko) * | 2001-07-20 | 2003-01-29 | 학교법인 경희대학교 | 액정디스플레이용 다결정 실리콘 형성 방법 |
KR100473996B1 (ko) * | 2002-01-09 | 2005-03-08 | 장 진 | 비정질 실리콘의 결정화 방법 |
EP1561765A4 (en) * | 2002-11-08 | 2007-07-04 | Mitsubishi Chem Corp | RADIATION-HARDENING RESIN COMPOSITION AND HARDENED PRODUCT THEREOF |
US7407696B2 (en) * | 2003-01-24 | 2008-08-05 | Board Of Trustees Operating Michigan State University | Phase change materials for storage media |
TW200523914A (en) * | 2004-01-15 | 2005-07-16 | Daxon Technology Inc | Phase change optical media and fabrication method thereof |
US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
-
2002
- 2002-11-08 KR KR10-2002-0068994A patent/KR100470274B1/ko not_active IP Right Cessation
-
2003
- 2003-11-06 US US10/533,998 patent/US7618852B2/en active Active
- 2003-11-06 AU AU2003276744A patent/AU2003276744A1/en not_active Abandoned
- 2003-11-06 CN CN200380102493.XA patent/CN1708832B/zh not_active Expired - Fee Related
- 2003-11-06 WO PCT/KR2003/002362 patent/WO2004042805A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
AU2003276744A1 (en) | 2004-06-07 |
WO2004042805A1 (en) | 2004-05-21 |
CN1708832B (zh) | 2014-12-31 |
US7618852B2 (en) | 2009-11-17 |
KR20040040762A (ko) | 2004-05-13 |
KR100470274B1 (ko) | 2005-02-05 |
US20060130939A1 (en) | 2006-06-22 |
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Owner name: SILICON DISPLAY TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ZHANG ZHEN Effective date: 20080627 |
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Effective date of registration: 20080627 Address after: Seoul, South Kerean Applicant after: Silicon Display Technology Co., Ltd Address before: Seoul, South Kerean Applicant before: Zhang Zhen |
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