CN1685612A - 半导体集成电路 - Google Patents
半导体集成电路 Download PDFInfo
- Publication number
- CN1685612A CN1685612A CNA038225700A CN03822570A CN1685612A CN 1685612 A CN1685612 A CN 1685612A CN A038225700 A CNA038225700 A CN A038225700A CN 03822570 A CN03822570 A CN 03822570A CN 1685612 A CN1685612 A CN 1685612A
- Authority
- CN
- China
- Prior art keywords
- transistor
- voltage
- supply voltage
- circuit block
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000009414 blockwork Methods 0.000 claims abstract description 3
- 101100481702 Arabidopsis thaliana TMK1 gene Proteins 0.000 description 27
- 208000035795 Hypocalcemic vitamin D-dependent rickets Diseases 0.000 description 27
- 208000033584 type 1 vitamin D-dependent rickets Diseases 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 102100031699 Choline transporter-like protein 1 Human genes 0.000 description 10
- 101000940912 Homo sapiens Choline transporter-like protein 1 Proteins 0.000 description 10
- 230000005611 electricity Effects 0.000 description 8
- 101000891367 Homo sapiens Transcobalamin-1 Proteins 0.000 description 7
- 102100040396 Transcobalamin-1 Human genes 0.000 description 7
- 101000666730 Homo sapiens T-complex protein 1 subunit alpha Proteins 0.000 description 6
- 102100038410 T-complex protein 1 subunit alpha Human genes 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 101150070189 CIN3 gene Proteins 0.000 description 3
- 101150110971 CIN7 gene Proteins 0.000 description 3
- 101150110298 INV1 gene Proteins 0.000 description 3
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101100481704 Arabidopsis thaliana TMK3 gene Proteins 0.000 description 2
- 102100035954 Choline transporter-like protein 2 Human genes 0.000 description 2
- 101100286980 Daucus carota INV2 gene Proteins 0.000 description 2
- 101100508840 Daucus carota INV3 gene Proteins 0.000 description 2
- 101000948115 Homo sapiens Choline transporter-like protein 2 Proteins 0.000 description 2
- 101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 108010089894 bradykinin potentiating factors Proteins 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- Computing Systems (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/002636 WO2004079908A1 (ja) | 2003-03-06 | 2003-03-06 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1685612A true CN1685612A (zh) | 2005-10-19 |
CN1320756C CN1320756C (zh) | 2007-06-06 |
Family
ID=32948256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038225700A Expired - Fee Related CN1320756C (zh) | 2003-03-06 | 2003-03-06 | 半导体集成电路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7019418B2 (zh) |
JP (1) | JP4231003B2 (zh) |
CN (1) | CN1320756C (zh) |
WO (1) | WO2004079908A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106601736A (zh) * | 2015-08-26 | 2017-04-26 | 三星电子株式会社 | 电源栅极开关系统 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE602004016051D1 (de) * | 2004-01-19 | 2008-10-02 | Nxp Bv | Mos-schaltnetzwerk |
JP4580202B2 (ja) * | 2004-09-03 | 2010-11-10 | 富士通セミコンダクター株式会社 | 半導体装置の電圧供給回路 |
JP4496069B2 (ja) * | 2004-12-20 | 2010-07-07 | 株式会社東芝 | Mos型半導体集積回路装置 |
JP4829034B2 (ja) * | 2006-08-09 | 2011-11-30 | 株式会社東芝 | 半導体集積回路 |
KR100906059B1 (ko) * | 2007-11-05 | 2009-07-03 | 주식회사 동부하이텍 | Mtcmos셀 제조 방법 |
US7521987B1 (en) * | 2007-12-03 | 2009-04-21 | Xilinx, Inc. | Multiple supply voltage select circuit for reduced supply voltage levels |
CN114727689B (zh) | 2019-11-12 | 2023-11-03 | Ykk株式会社 | 拉链 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5210976A (en) * | 1975-07-15 | 1977-01-27 | Hitachi Ltd | Automatic insertion control device |
JPS6095752A (ja) * | 1983-10-28 | 1985-05-29 | Hitachi Ltd | トラツキング制御装置の演算回路 |
KR100254134B1 (ko) * | 1991-11-08 | 2000-04-15 | 나시모토 류우조오 | 대기시 전류저감회로를 가진 반도체 집적회로 |
JP3112047B2 (ja) * | 1991-11-08 | 2000-11-27 | 株式会社日立製作所 | 半導体集積回路 |
JP3285664B2 (ja) * | 1992-06-29 | 2002-05-27 | 富士通株式会社 | ダイナミック・ランダム・アクセス・メモリ |
JP3245663B2 (ja) * | 1994-01-19 | 2002-01-15 | 日本電信電話株式会社 | 論理回路 |
JPH0912217A (ja) * | 1995-06-27 | 1997-01-14 | Sumitomo Wiring Syst Ltd | 電線癖除去装置 |
TW324101B (en) * | 1995-12-21 | 1998-01-01 | Hitachi Ltd | Semiconductor integrated circuit and its working method |
JP3727838B2 (ja) * | 2000-09-27 | 2005-12-21 | 株式会社東芝 | 半導体集積回路 |
JP3693911B2 (ja) * | 2000-11-17 | 2005-09-14 | シャープ株式会社 | 半導体集積回路 |
US6501300B2 (en) * | 2000-11-21 | 2002-12-31 | Hitachi, Ltd. | Semiconductor integrated circuit |
DE60239447D1 (de) * | 2001-01-09 | 2011-04-28 | Broadcom Corp | Submikrometer-eingangs/ausgangsschaltung mit hoher eingangsspannungsverträglichkeit |
US7095273B2 (en) * | 2001-04-05 | 2006-08-22 | Fujitsu Limited | Voltage generator circuit and method for controlling thereof |
JP3575453B2 (ja) * | 2001-09-14 | 2004-10-13 | ソニー株式会社 | 基準電圧発生回路 |
JP4052923B2 (ja) * | 2002-10-25 | 2008-02-27 | 株式会社ルネサステクノロジ | 半導体装置 |
TWI220701B (en) * | 2002-12-26 | 2004-09-01 | Winbond Electronics Corp | Current mirror operated by low voltage |
JP4184104B2 (ja) * | 2003-01-30 | 2008-11-19 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2004336010A (ja) * | 2003-04-16 | 2004-11-25 | Seiko Epson Corp | 半導体集積回路、電子機器、及びトランジスタのバックゲート電位制御方法 |
-
2003
- 2003-03-06 CN CNB038225700A patent/CN1320756C/zh not_active Expired - Fee Related
- 2003-03-06 WO PCT/JP2003/002636 patent/WO2004079908A1/ja active Application Filing
- 2003-03-06 JP JP2004569092A patent/JP4231003B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-04 US US11/071,348 patent/US7019418B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106601736A (zh) * | 2015-08-26 | 2017-04-26 | 三星电子株式会社 | 电源栅极开关系统 |
CN106601736B (zh) * | 2015-08-26 | 2021-11-23 | 三星电子株式会社 | 电源栅极开关系统 |
Also Published As
Publication number | Publication date |
---|---|
US20050151579A1 (en) | 2005-07-14 |
JP4231003B2 (ja) | 2009-02-25 |
WO2004079908A1 (ja) | 2004-09-16 |
JPWO2004079908A1 (ja) | 2006-06-08 |
CN1320756C (zh) | 2007-06-06 |
US7019418B2 (en) | 2006-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1162909C (zh) | 半导体集成电路 | |
US7408399B2 (en) | Active driving of normally on, normally off cascoded configuration devices through asymmetrical CMOS | |
CN100340063C (zh) | 半导体集成电路 | |
TWI413351B (zh) | 用於將金屬氧化半導體電晶體之閘極驅動至非導電狀態之電路 | |
CN1812263A (zh) | 缓冲器电路和集成电路 | |
CN1237040A (zh) | 可减少功耗的逻辑电路 | |
EP0294882A2 (en) | High voltage semiconductor with integrated low voltage circuitry | |
CN1825602A (zh) | 半导体装置及互补型金属绝缘半导体逻辑电路 | |
CN1320756C (zh) | 半导体集成电路 | |
KR100585886B1 (ko) | 동적 문턱 전압을 가지는 반도체 회로 | |
CN1773859A (zh) | 半导体集成电路器件、以及制造该器件的方法 | |
CN1445930A (zh) | 电平漂移电路和有源矩阵驱动器 | |
CN1726588A (zh) | N沟道上拉元件和逻辑电路 | |
CN111211681B (zh) | 半导体装置 | |
CN1649229A (zh) | 电源电路及其电源供给控制方法 | |
CN1272851C (zh) | 集成互补型金属氧化物半导体电路 | |
JP2008029059A (ja) | 半導体装置の駆動回路 | |
CN1758443A (zh) | 高压工作场效应晶体管、其偏置电路以及高压电路 | |
CN1898870A (zh) | 电平转换电路及具有该电平转换电路的半导体集成电路 | |
CN206946908U (zh) | 高侧栅极驱动器 | |
CN113359933B (zh) | 参考电压产生电路 | |
CN1208931A (zh) | 半导体集成电路 | |
CN215452774U (zh) | 一种不需要外置Boost电容的high side高压NMOS驱动电路 | |
CN1753309A (zh) | 变换信号的电压振幅的电平变换电路 | |
US10601422B2 (en) | Integrated high-side driver for P-N bimodal power device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081017 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081017 Address after: Tokyo, Japan, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa Patentee before: Fujitsu Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Kanagawa Patentee after: Fujitsu Semiconductor Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150511 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150511 Address after: Kanagawa Patentee after: Co., Ltd. Suo Si future Address before: Kanagawa Patentee before: Fujitsu Semiconductor Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070606 Termination date: 20190306 |