CN1663027B - 使用硅化物接触制造半导体器件的方法 - Google Patents

使用硅化物接触制造半导体器件的方法 Download PDF

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Publication number
CN1663027B
CN1663027B CN038149540A CN03814954A CN1663027B CN 1663027 B CN1663027 B CN 1663027B CN 038149540 A CN038149540 A CN 038149540A CN 03814954 A CN03814954 A CN 03814954A CN 1663027 B CN1663027 B CN 1663027B
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CN
China
Prior art keywords
silicide
metal
substance
layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN038149540A
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English (en)
Chinese (zh)
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CN1663027A (zh
Inventor
P·R·贝瑟
S·S·尚
D·E·布朗
E·N·佩顿
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GlobalFoundries Inc
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GlobalFoundries Inc
Advanced Micro Devices Inc
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Publication of CN1663027A publication Critical patent/CN1663027A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN038149540A 2002-06-25 2003-06-04 使用硅化物接触制造半导体器件的方法 Expired - Fee Related CN1663027B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/180,858 US6689688B2 (en) 2002-06-25 2002-06-25 Method and device using silicide contacts for semiconductor processing
US10/180,858 2002-06-25
PCT/US2003/017599 WO2004001826A1 (en) 2002-06-25 2003-06-04 Method using silicide contacts for semiconductor processing

Publications (2)

Publication Number Publication Date
CN1663027A CN1663027A (zh) 2005-08-31
CN1663027B true CN1663027B (zh) 2010-12-08

Family

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Family Applications (1)

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CN038149540A Expired - Fee Related CN1663027B (zh) 2002-06-25 2003-06-04 使用硅化物接触制造半导体器件的方法

Country Status (8)

Country Link
US (1) US6689688B2 (OSRAM)
EP (1) EP1522093A1 (OSRAM)
JP (1) JP2006516174A (OSRAM)
KR (1) KR20050009761A (OSRAM)
CN (1) CN1663027B (OSRAM)
AU (1) AU2003278824A1 (OSRAM)
TW (1) TWI298521B (OSRAM)
WO (1) WO2004001826A1 (OSRAM)

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WO2004032217A1 (en) * 2002-09-30 2004-04-15 Advanced Micro Devices, Inc. Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material
DE10245607B4 (de) 2002-09-30 2009-07-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Bilden von Schaltungselementen mit Nickelsilizidgebieten, die durch ein Barrierendiffusionsmaterial thermisch stabilisiert sind sowie Verfahren zur Herstellung einer Nickelmonosilizidschicht
JP3840198B2 (ja) * 2003-04-28 2006-11-01 株式会社東芝 半導体装置およびその製造方法
JP4349131B2 (ja) * 2004-01-09 2009-10-21 ソニー株式会社 バイポーラトランジスタの製造方法及び半導体装置の製造方法
US20050212015A1 (en) * 2004-03-25 2005-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate semiconductor device and manufacturing method
JP2005294360A (ja) * 2004-03-31 2005-10-20 Nec Electronics Corp 半導体装置の製造方法
US20050221612A1 (en) * 2004-04-05 2005-10-06 International Business Machines Corporation A low thermal budget (mol) liner, a semiconductor device comprising said liner and method of forming said semiconductor device
US7241674B2 (en) * 2004-05-13 2007-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming silicided gate structure
US7015126B2 (en) * 2004-06-03 2006-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming silicided gate structure
JP2006013270A (ja) * 2004-06-29 2006-01-12 Renesas Technology Corp 半導体装置およびその製造方法
US7396767B2 (en) * 2004-07-16 2008-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure including silicide regions and method of making same
US7135372B2 (en) * 2004-09-09 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Strained silicon device manufacturing method
KR100618877B1 (ko) * 2004-11-19 2006-09-08 삼성전자주식회사 멀티비트 비휘발성 메모리 소자, 그 동작 방법 및 그 제조방법
JP2006147897A (ja) * 2004-11-22 2006-06-08 Samsung Electronics Co Ltd 半導体装置の製造方法
JP4146859B2 (ja) * 2004-11-30 2008-09-10 松下電器産業株式会社 半導体装置の製造方法
JP2006261635A (ja) * 2005-02-21 2006-09-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20060246720A1 (en) * 2005-04-28 2006-11-02 Chii-Ming Wu Method to improve thermal stability of silicides with additives
JP2007067225A (ja) * 2005-08-31 2007-03-15 Toshiba Corp 半導体装置およびその製造方法
CN100434569C (zh) * 2005-10-14 2008-11-19 首都师范大学 一种环保的活塞环表面改性方法
JP2007142347A (ja) 2005-10-19 2007-06-07 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4755894B2 (ja) * 2005-12-16 2011-08-24 株式会社東芝 半導体装置およびその製造方法
US20070221993A1 (en) * 2006-03-27 2007-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making a thermally stable silicide
TW200910526A (en) * 2007-07-03 2009-03-01 Renesas Tech Corp Method of manufacturing semiconductor device
US7981749B2 (en) * 2007-08-20 2011-07-19 GlobalFoundries, Inc. MOS structures that exhibit lower contact resistance and methods for fabricating the same
JP2009094395A (ja) * 2007-10-11 2009-04-30 Renesas Technology Corp 半導体装置およびその製造方法
US8435862B2 (en) * 2010-03-29 2013-05-07 Renesas Electronics Corporation Method of manufacturing semiconductor device
CN102290325A (zh) * 2010-06-21 2011-12-21 无锡华润上华半导体有限公司 金属硅化物的清洗方法
CN102543701B (zh) * 2010-12-24 2014-05-14 中芯国际集成电路制造(上海)有限公司 制作金属硅化物的方法
CN102569054A (zh) * 2012-02-27 2012-07-11 中国科学院微电子研究所 一种t型栅的制备方法
US8927422B2 (en) 2012-06-18 2015-01-06 International Business Machines Corporation Raised silicide contact
US9240454B1 (en) * 2014-10-22 2016-01-19 Stmicroelectronics, Inc. Integrated circuit including a liner silicide with low contact resistance
US20240072125A1 (en) * 2022-08-23 2024-02-29 Wolfspeed, Inc. Electronic devices with reduced ohmic to ohmic dimensions

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1219771A (zh) * 1997-12-08 1999-06-16 日本电气株式会社 半导体器件及其制造方法
US5950098A (en) * 1995-06-26 1999-09-07 Mitsubishi Denki Kabushiki Kaisha Manufacturing method of a semiconductor device with a silicide layer
US6180469B1 (en) * 1998-11-06 2001-01-30 Advanced Micro Devices, Inc. Low resistance salicide technology with reduced silicon consumption
US6380057B1 (en) * 2001-02-13 2002-04-30 Advanced Micro Devices, Inc. Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant

Family Cites Families (9)

* Cited by examiner, † Cited by third party
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JP3612157B2 (ja) * 1996-11-27 2005-01-19 株式会社ルネサステクノロジ 半導体装置の製造方法
US20020045307A1 (en) * 1997-07-03 2002-04-18 Jorge Kittl Method of forming a silicide layer using metallic impurities and pre-amorphization
US6165903A (en) * 1998-11-04 2000-12-26 Advanced Micro Devices, Inc. Method of forming ultra-shallow junctions in a semiconductor wafer with deposited silicon layer to reduce silicon consumption during salicidation
JP2001077050A (ja) * 1999-08-31 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6440851B1 (en) * 1999-10-12 2002-08-27 International Business Machines Corporation Method and structure for controlling the interface roughness of cobalt disilicide
US6413859B1 (en) * 2000-03-06 2002-07-02 International Business Machines Corporation Method and structure for retarding high temperature agglomeration of silicides using alloys
US6890854B2 (en) * 2000-11-29 2005-05-10 Chartered Semiconductor Manufacturing, Inc. Method and apparatus for performing nickel salicidation
US6444578B1 (en) * 2001-02-21 2002-09-03 International Business Machines Corporation Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices
US6468901B1 (en) * 2001-05-02 2002-10-22 Sharp Laboratories Of America, Inc. Nickel silicide including iridium for use in ultra-shallow junctions with high thermal stability and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950098A (en) * 1995-06-26 1999-09-07 Mitsubishi Denki Kabushiki Kaisha Manufacturing method of a semiconductor device with a silicide layer
CN1219771A (zh) * 1997-12-08 1999-06-16 日本电气株式会社 半导体器件及其制造方法
US6180469B1 (en) * 1998-11-06 2001-01-30 Advanced Micro Devices, Inc. Low resistance salicide technology with reduced silicon consumption
US6380057B1 (en) * 2001-02-13 2002-04-30 Advanced Micro Devices, Inc. Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant

Also Published As

Publication number Publication date
TWI298521B (en) 2008-07-01
US6689688B2 (en) 2004-02-10
JP2006516174A (ja) 2006-06-22
KR20050009761A (ko) 2005-01-25
US20030235984A1 (en) 2003-12-25
TW200400571A (en) 2004-01-01
WO2004001826A1 (en) 2003-12-31
AU2003278824A1 (en) 2004-01-06
EP1522093A1 (en) 2005-04-13
CN1663027A (zh) 2005-08-31

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Effective date: 20100721

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Granted publication date: 20101208

Termination date: 20160604