CN1663027B - 使用硅化物接触制造半导体器件的方法 - Google Patents
使用硅化物接触制造半导体器件的方法 Download PDFInfo
- Publication number
- CN1663027B CN1663027B CN038149540A CN03814954A CN1663027B CN 1663027 B CN1663027 B CN 1663027B CN 038149540 A CN038149540 A CN 038149540A CN 03814954 A CN03814954 A CN 03814954A CN 1663027 B CN1663027 B CN 1663027B
- Authority
- CN
- China
- Prior art keywords
- silicide
- metal
- area
- formation
- nisi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 129
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 77
- 229910005883 NiSi Inorganic materials 0.000 claims abstract description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 229910005881 NiSi 2 Inorganic materials 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000006104 solid solution Substances 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 24
- 238000005240 physical vapour deposition Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000000608 laser ablation Methods 0.000 abstract description 3
- 229910012990 NiSi2 Inorganic materials 0.000 abstract description 2
- -1 NiSi2) Chemical compound 0.000 abstract description 2
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 13
- 239000000126 substance Substances 0.000 description 7
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910019001 CoSi Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Abstract
Description
物质 | 离子注入束能量 |
钒 | 大约5千电子伏特或者更少 |
锗 | 大约6.5千电子伏特或者更少 |
铱 | 大约7千电子伏特或者更少 |
钛 | 大约5千电子伏特或者更少 |
铬 | 大约5千电子伏特或者更少 |
钽 | 大约8千电子伏特或者更少 |
铼 | 大约8.5千电子伏特或者更少 |
锆 | 大约7千电子伏特或者更少 |
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/180,858 US6689688B2 (en) | 2002-06-25 | 2002-06-25 | Method and device using silicide contacts for semiconductor processing |
US10/180,858 | 2002-06-25 | ||
PCT/US2003/017599 WO2004001826A1 (en) | 2002-06-25 | 2003-06-04 | Method using silicide contacts for semiconductor processing |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1663027A CN1663027A (zh) | 2005-08-31 |
CN1663027B true CN1663027B (zh) | 2010-12-08 |
Family
ID=29735101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN038149540A Expired - Fee Related CN1663027B (zh) | 2002-06-25 | 2003-06-04 | 使用硅化物接触制造半导体器件的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6689688B2 (zh) |
EP (1) | EP1522093A1 (zh) |
JP (1) | JP2006516174A (zh) |
KR (1) | KR20050009761A (zh) |
CN (1) | CN1663027B (zh) |
AU (1) | AU2003278824A1 (zh) |
TW (1) | TWI298521B (zh) |
WO (1) | WO2004001826A1 (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10245607B4 (de) | 2002-09-30 | 2009-07-16 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Bilden von Schaltungselementen mit Nickelsilizidgebieten, die durch ein Barrierendiffusionsmaterial thermisch stabilisiert sind sowie Verfahren zur Herstellung einer Nickelmonosilizidschicht |
WO2004032217A1 (en) * | 2002-09-30 | 2004-04-15 | Advanced Micro Devices, Inc. | Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material |
JP3840198B2 (ja) * | 2003-04-28 | 2006-11-01 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP4349131B2 (ja) * | 2004-01-09 | 2009-10-21 | ソニー株式会社 | バイポーラトランジスタの製造方法及び半導体装置の製造方法 |
US20050212015A1 (en) * | 2004-03-25 | 2005-09-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal gate semiconductor device and manufacturing method |
JP2005294360A (ja) * | 2004-03-31 | 2005-10-20 | Nec Electronics Corp | 半導体装置の製造方法 |
US20050221612A1 (en) * | 2004-04-05 | 2005-10-06 | International Business Machines Corporation | A low thermal budget (mol) liner, a semiconductor device comprising said liner and method of forming said semiconductor device |
US7241674B2 (en) * | 2004-05-13 | 2007-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming silicided gate structure |
US7015126B2 (en) * | 2004-06-03 | 2006-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming silicided gate structure |
JP2006013270A (ja) * | 2004-06-29 | 2006-01-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7396767B2 (en) * | 2004-07-16 | 2008-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure including silicide regions and method of making same |
US7135372B2 (en) * | 2004-09-09 | 2006-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained silicon device manufacturing method |
KR100618877B1 (ko) * | 2004-11-19 | 2006-09-08 | 삼성전자주식회사 | 멀티비트 비휘발성 메모리 소자, 그 동작 방법 및 그 제조방법 |
JP2006147897A (ja) * | 2004-11-22 | 2006-06-08 | Samsung Electronics Co Ltd | 半導体装置の製造方法 |
JP4146859B2 (ja) * | 2004-11-30 | 2008-09-10 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP2006261635A (ja) * | 2005-02-21 | 2006-09-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US20060246720A1 (en) * | 2005-04-28 | 2006-11-02 | Chii-Ming Wu | Method to improve thermal stability of silicides with additives |
JP2007067225A (ja) * | 2005-08-31 | 2007-03-15 | Toshiba Corp | 半導体装置およびその製造方法 |
CN100434569C (zh) * | 2005-10-14 | 2008-11-19 | 首都师范大学 | 一种环保的活塞环表面改性方法 |
JP2007142347A (ja) | 2005-10-19 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4755894B2 (ja) * | 2005-12-16 | 2011-08-24 | 株式会社東芝 | 半導体装置およびその製造方法 |
US20070221993A1 (en) * | 2006-03-27 | 2007-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making a thermally stable silicide |
TW200910526A (en) * | 2007-07-03 | 2009-03-01 | Renesas Tech Corp | Method of manufacturing semiconductor device |
US7981749B2 (en) * | 2007-08-20 | 2011-07-19 | GlobalFoundries, Inc. | MOS structures that exhibit lower contact resistance and methods for fabricating the same |
JP2009094395A (ja) * | 2007-10-11 | 2009-04-30 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US8435862B2 (en) * | 2010-03-29 | 2013-05-07 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
CN102290325A (zh) * | 2010-06-21 | 2011-12-21 | 无锡华润上华半导体有限公司 | 金属硅化物的清洗方法 |
CN102543701B (zh) * | 2010-12-24 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | 制作金属硅化物的方法 |
CN102569054A (zh) * | 2012-02-27 | 2012-07-11 | 中国科学院微电子研究所 | 一种t型栅的制备方法 |
US8927422B2 (en) | 2012-06-18 | 2015-01-06 | International Business Machines Corporation | Raised silicide contact |
US9240454B1 (en) * | 2014-10-22 | 2016-01-19 | Stmicroelectronics, Inc. | Integrated circuit including a liner silicide with low contact resistance |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1219771A (zh) * | 1997-12-08 | 1999-06-16 | 日本电气株式会社 | 半导体器件及其制造方法 |
US5950098A (en) * | 1995-06-26 | 1999-09-07 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of a semiconductor device with a silicide layer |
US6180469B1 (en) * | 1998-11-06 | 2001-01-30 | Advanced Micro Devices, Inc. | Low resistance salicide technology with reduced silicon consumption |
US6380057B1 (en) * | 2001-02-13 | 2002-04-30 | Advanced Micro Devices, Inc. | Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3612157B2 (ja) * | 1996-11-27 | 2005-01-19 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US20020045307A1 (en) * | 1997-07-03 | 2002-04-18 | Jorge Kittl | Method of forming a silicide layer using metallic impurities and pre-amorphization |
US6165903A (en) * | 1998-11-04 | 2000-12-26 | Advanced Micro Devices, Inc. | Method of forming ultra-shallow junctions in a semiconductor wafer with deposited silicon layer to reduce silicon consumption during salicidation |
JP2001077050A (ja) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | 半導体装置の製造方法 |
US6440851B1 (en) * | 1999-10-12 | 2002-08-27 | International Business Machines Corporation | Method and structure for controlling the interface roughness of cobalt disilicide |
US6413859B1 (en) * | 2000-03-06 | 2002-07-02 | International Business Machines Corporation | Method and structure for retarding high temperature agglomeration of silicides using alloys |
US6890854B2 (en) * | 2000-11-29 | 2005-05-10 | Chartered Semiconductor Manufacturing, Inc. | Method and apparatus for performing nickel salicidation |
US6444578B1 (en) * | 2001-02-21 | 2002-09-03 | International Business Machines Corporation | Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices |
US6468901B1 (en) * | 2001-05-02 | 2002-10-22 | Sharp Laboratories Of America, Inc. | Nickel silicide including iridium for use in ultra-shallow junctions with high thermal stability and method of manufacturing the same |
-
2002
- 2002-06-25 US US10/180,858 patent/US6689688B2/en not_active Expired - Fee Related
-
2003
- 2003-06-04 WO PCT/US2003/017599 patent/WO2004001826A1/en active Application Filing
- 2003-06-04 CN CN038149540A patent/CN1663027B/zh not_active Expired - Fee Related
- 2003-06-04 JP JP2004515734A patent/JP2006516174A/ja not_active Ceased
- 2003-06-04 KR KR10-2004-7021193A patent/KR20050009761A/ko not_active Application Discontinuation
- 2003-06-04 AU AU2003278824A patent/AU2003278824A1/en not_active Abandoned
- 2003-06-04 EP EP03741873A patent/EP1522093A1/en not_active Withdrawn
- 2003-06-18 TW TW092116497A patent/TWI298521B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5950098A (en) * | 1995-06-26 | 1999-09-07 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of a semiconductor device with a silicide layer |
CN1219771A (zh) * | 1997-12-08 | 1999-06-16 | 日本电气株式会社 | 半导体器件及其制造方法 |
US6180469B1 (en) * | 1998-11-06 | 2001-01-30 | Advanced Micro Devices, Inc. | Low resistance salicide technology with reduced silicon consumption |
US6380057B1 (en) * | 2001-02-13 | 2002-04-30 | Advanced Micro Devices, Inc. | Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant |
Also Published As
Publication number | Publication date |
---|---|
US6689688B2 (en) | 2004-02-10 |
WO2004001826A1 (en) | 2003-12-31 |
EP1522093A1 (en) | 2005-04-13 |
JP2006516174A (ja) | 2006-06-22 |
AU2003278824A1 (en) | 2004-01-06 |
KR20050009761A (ko) | 2005-01-25 |
CN1663027A (zh) | 2005-08-31 |
US20030235984A1 (en) | 2003-12-25 |
TW200400571A (en) | 2004-01-01 |
TWI298521B (en) | 2008-07-01 |
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