CN1661812A - 具有隔离结构的高电压ldmos晶体管 - Google Patents

具有隔离结构的高电压ldmos晶体管 Download PDF

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CN1661812A
CN1661812A CN2004100551833A CN200410055183A CN1661812A CN 1661812 A CN1661812 A CN 1661812A CN 2004100551833 A CN2004100551833 A CN 2004100551833A CN 200410055183 A CN200410055183 A CN 200410055183A CN 1661812 A CN1661812 A CN 1661812A
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黄志丰
杨大勇
林振宇
简铎欣
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Fairchild Taiwan Corp
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Abstract

本发明为一种具有隔离结构的高电压LDMOS晶体管，包括在一N型井区(N－Well)中的一漏极延伸区(extended drain region)内的一P型区域(P－field)与分开的P型区域群(divided P－fields)，该P型区域与分开的P型区域群于N型井区内形成接面场效(junction－field)，使得漂移区能够在崩溃发生前先完全空乏，因此晶体管可以有较高的崩溃电压(break down voltage)且N型井区可容许较高的掺杂浓度。较高的掺杂浓度可有效降低LDMOS半导体的导通阻抗(on－resistance)，此外，在源极(source)扩散区之下所形成的该N型井区，为源极提供一低阻抗路径，以限制漏极区与源极区之间的晶体管电流。

Description

具有隔离结构的高电压LDMOS晶体管
技术领域
本发明涉及一种半导体装置，特别是关于一横向功率金氧半场效晶体管(lateral power MOSFET)。
背景技术
在电源IC的发展过程中，为了将功率开关以及控制电路整合在一起而开发的单芯片制程，尤其是目前用于制作单石集成电路(monolithic IC)的横向二次扩散金氧半导体(lateral double diffusion MOS，LDMOS)制程，是一主流趋势，LDMOS制程是于半导体基板的表面进行平面扩散(planar diffusion)以便形成横向的主要电流路径，由于横向MOSFET是以典型的IC制程所制造，因此控制电路与横向功率MOSFET可以整合在一个单石电源IC上。
图1所示为一个电源转换器(power converter)的方块图，变压器200为单石电源IC 500的负载，LDMOS晶体管100具有漏极电极10、源极电极20以与门极40(栅极)，用以切换变压器200。电阻400用来感测LDMOS晶体管100的切换电流Is，以进行功率控制。控制器300产生一控制信号以驱动LDMOS晶体管100进行功率转换，为了要降低成本，并使切换效能最佳化，控制器300与LDMOS晶体管100放置在同一基板上，LDMOS制程采用表面电场缩减(reduced surfaceelectricfield，RESURF)技术与低厚度磊晶(EPI)或N型井区(N-well)技术，可以达到高电压兼具低导通阻抗的目标。
近来，有许多与高电压LDMOS晶体管制程有关的开发技术被相继提出，尽管目前可以制造出高电压与低导通电阻的LDMOS晶体管，但是制程的复杂度会提高制作成本，同时/或者降低生产合格率，公知的半导体技术还有一个缺点是非隔离的源极结构，未受隔离的晶体管电流可能会在基板中流动，产生噪声干扰控制电路300，此外，LDMOS晶体管100的交换电流Is可能会产生一个地弹反射干扰控制电路300。
发明内容
本发明要解决的技术问题是：提供一种具有隔离结构的高电压LDMOS晶体管，达到高崩溃电压、低导通阻抗与隔离特性的晶体管以符合单石集成电路整合的目标。
为此，本发明提供一种具有隔离结构的高电压LDMOS晶体管，该隔离的高电压横向二次扩散金氧半导体(LDMOS)包括一P型基板(P-substrate)，LDMOS晶体管同时包含具有N型导电离子(conductivity type ion)的一第一扩散区(diffusion region)与一第二扩散区，用以在P基板内形成一N型井区(N-well)，第一扩散区更包括一漏极延伸区(extended drain region)，一具有N+型导电离子的漏极扩散区形成一漏极区，而该漏极区位于漏极延伸区内。一具有P型导电离子的第三扩散区在该漏极延伸区内形成一P型区域(P-field)与一分开的P型区域群(divided P-fields)，其中该分开的P型区域群至少含有一个以上的分开的P型区域。一具有N+型导电离子的源极扩散区形成一源极区，一具有P+型导电离于的接点扩散区形成一接点区，一具有P型导电离子的第四扩散区形成一隔离的P型井区以防止崩溃，其中位于该第二扩散区的隔离的P型井区将该源极区与该接点区包围。位于N型井区中的漏极延伸区内的P型区域与分开的P型区域群(divided P-fields)在N型井区产生接面场效，使漂移区(drift region)空乏，因此会产生一个介于源极区与漏极区的传导通道，并穿过N型井区，而分开的P型区域群可降低信道的导通电阻。闸极(polysilicongate electrode)形成于该传导通道之上以控制该传导通道的电流，此外，由第二扩散区形成的N型井区为源极区提供一低阻抗路径，以限制漏极区与源极区之间的晶体管电流。
本发明的特点和优点是：本发明的具有隔离结构的高电压LDMOS晶体管，为一种高电压横向二次扩散金氧半导体(LDMOS)晶体管，包括在一N型井区(N-Well)中的一漏极延伸区(extended drain region)内的一P型区域(P-field)与分开的P型区域群(divided P-fields)，该P型区域与分开的P型区域群于N型井区内形成接面场效(junction-field)，使得漂移区能够在崩溃发生前先完全空乏，因此晶体管可以有较高的崩溃电压(break down voltage)且N型井区可容许较高的掺杂浓度。较高的掺杂浓度可有效降低LDMOS半导体的导通阻抗(on-resistance)，此外，在源极(source)扩散区之下所形成的该N型井区，为源极提供一低阻抗路径，以限制漏极区与源极区之间的晶体管电流。隔离的LDMOS晶体管可以限制电流流动，从而正确地量测通过电阻的交换电流。
附图说明
图1为电源转换器的方块图；
图2为本发明的较佳实施例中一个LDMOS晶体管的剖面图；
图3为图2的LDMOS晶体管的俯视图；以及
图4为根据本发明的较佳实施例，当650V电压加诸于LDMOS晶体管时，所呈现的电场分布。
附图标号说明：
10、漏极电极         12、焊垫               15、漏极金属接点
20、源极电极         22、焊垫               25、源极金属接点
30、N型井区          33、第一扩散区         37、第二扩散区
40、闸极             42、焊垫               50、漏极延伸区
52、漏极区           53、漏极扩散区         55、源极扩散区
56、源极区           57、接点扩散区         58、接点区
60、P型区域          61、分开的P型区域      62、分开的P型区域
65、隔离的P型井区    67、第四扩散区         71、漏极间隙
72、源极间隙            81、薄闸极氧化层         85、绝缘层
86、绝缘层              87、场氧化层             88、场氧化层
90、P型基板             100、LDMOS晶体管         200、变压器
300、控制器             400、电阻                500、电源IC
具体实施方式
本发明的前述技术方案或特征，将依据附图及实施例加以详细说明，惟附图及实施例，旨在具体说明本发明的特征而非在限制或缩限本发明。
图2为一个LDMOS晶体管100的剖面图，LDMOS晶体管100包含P型基板90，LDMOS晶体管100更包含具有N型导电离子的第一扩散区33与具有N型导电离子的第二扩散区37，以在P型基板90内形成N型井区30，而第一扩散区33更包含一漏极延伸区50。由第一扩散区33形成的N型井区30内具有N+型导电离于的漏极扩散区53，其于漏极延伸区50内产生漏极区52。具有P型导电离子的第三扩散区在漏极延伸区50内形成P型区域60以及分开的P型区域61与62，此实施例中其中该分开的P型区域61与62比P型区域60更靠近漏极区52。由第二扩散区37形成的N型井区30内具有N+型导电离子的源极扩散区55，其产生源极区56。由第二扩散区37形成的N型井区30内具有P+型导电离子的接点扩散区57，其产生一接点区58。由第二扩散区37形成的N型井区30内具有P型导电离子的第四扩散区67，其产生一隔离的P型井区65以防止崩溃，其中隔离的P型井区65将源极区56与接点区58围起。P型区域60以及分开的P型区域61与62在N型井区30内形成接面场效，使得漂移区(drift region)空乏。
一传导通道形成于源极区56与漏极区52之间，并穿过N型井区30，分开的P型区域61与62可进一步降低传导通道的导通电阻，一薄闸极氧化层(thin gateoxide)81与一厚场氧化层(thick field oxide)87形成于P型基板90之上，一闸极40位于薄闸极氧化层81与场氧化层87的区域之上，以控制传导通道的电流，一漏极间隙(drain-gap)71形成于漏极扩散区53与场氧化层87之间，用以在漏极扩散区53与场氧化层87之间维持一空间，源极间隙(source-gap)72形成于场氧化层87与隔离的P型井区65之间，用以在场氧化层87与隔离的P型井区65之间维持一空间，漏极间隙71与源极间隙72的适当配置可在实质上有助于提升LDMOS晶体管100的崩溃电压，漏极间隙71更可进一步降低传导通道的导通阻抗。
绝缘层85与86覆盖在闸极40、场氧化层87与场氧化层88之上，绝缘层85与86是采用，例如，二氧化硅(silicon dioxide)等材料构成，漏极金属接点15为一金属电极，用以接触漏极扩散区53，源极金属接点25亦为一金属电极，用以接触源极扩散区55与接点扩散区57。
图3为图2所示LDMOS晶体管100的俯视图，LDMOS晶体管100包含一漏极电极10、源极电极20、以与门极(polysilicon gate electrode)40，还有漏极电极10所用的焊垫(bonding pad)12、源极电极20所用的焊垫22、以与门极40所用的焊垫42。
参照图2与图3，漏极延伸区50与漏极扩散区53形成漏极10，而隔离的P型井区65、源极扩散区55、以及接点扩散区57组成源极电极20，焊垫12连接至漏极金属接点15，焊垫22连接至源极金属接点25，焊垫42连接至闸极40。在P型区域60以及分开的P型区域61与62底下的N型井区30由漏极电极10连接至源极电极20，在分开的P型区域61与62之间的N型井区30可降低传导通道的导通阻抗。
P型区域60以及分开的P型区域61与62位于漏极延伸区50内，在N型井区30内形成一接面场效(junction-field)，其中N型井区30、P型区域60以及分开的P型区域61与62使漂移区(drift region)空乏，而漂移区在N型井区30内建立电场，并提升崩溃电压，为了要达到高崩溃电压，漏极延伸区50必须在崩溃发生之前完全空乏，N型井区30、P型区域60以及分开的P型区域61与62能让漏极延伸区50在崩溃到达前被空乏，即使漂移区具有高掺杂浓度(doping density)亦同，如此一来可以让漂移区允许较高的掺杂浓度以达到低阻抗的特性。
图4为当650V电压加诸于LDMOS晶体管100的漏极区52时的电场分布情形。粗虚线分别标出0V、100V、200V、300V、400V、500V、550V、600V、以及650V等电压。
此外，由第二扩散区37形成的N型井区30部分为源极区56提供一低阻抗路径，而限制了在N型井区内漏极区52与源极区56之间的晶体管电流。
本发明的LDMOS晶体管100采用简单的结构来达成高崩溃电压、低导通阻抗与隔离的特性，在成本降低的同时合格率也可获得提升。
虽然本发明已以具体实施例揭示，但其并非用以限定本发明，任何本领域的技术人员，在不脱离本发明的构思和范围的前提下所作出的等同组件的置换，或依本发明专利保护范围所作的等同变化与修饰，皆应仍属本专利涵盖之范畴。

Claims (4)

1.一种具有隔离结构的高电压LDMOS晶体管，其特征在于，包含：
一P型基板；
一第一扩散区与一第二扩散区，其中该第一扩散区与该第二扩散区皆具有N型导电离子，于该P型基板内形成一N型井区，而其中该第一扩散区包含一漏极延伸区；
一具有N+型导电离子的漏极扩散区，用以在该漏极延伸区内形成一漏极区；
一具有P型导电离子的一第三扩散区，包含在该漏极延伸区内形成的一P型区域与分开的P型区域群，且其中该P型区域与分开的P型区域群在该漏极延伸区内产生接面场效；
一具有N+型导电离子的源极扩散区，用以在该第二扩散区所形成的该N型井区内形成一源极区；
一传导通道，形成于该源极区与该漏极区之间；
一闸极，形成于该传导通道之上以控制该传导通道的一电流；
一具有P+型导电离子的接点扩散区，用以在该第二扩散区所形成的该N型井区内形成一接点区；以及
一具有P型导电离子的一第四扩散区，用以在该第二扩散区所形成的该N型井区内形成一隔离的P型井区以防止崩溃，其中该隔离的P型井区将该源极区与该接点区包围起。
2.如权利要求1所述的晶体管，其特征在于，其中由该第二扩散区形成的该N型井区为该源极区提供一低阻抗路径，以限制该漏极区与该源极区之间的一晶体管电流。
3.如权利要求1所述的晶体管，其特征在于，所述晶体管更包含：
一薄闸极氧化层，形成于该传导通道之上；
一厚场氧化层，邻接于该薄闸极氧化层侧面；
一漏极间隙，形成于该漏极扩散区与该厚场氧化层之间，用以在该漏极扩散区与该厚场氧化层之间维持一空间；
一源极间隙，形成于该厚场氧化层与该隔离的P型井区之间，用以在该厚场氧化层与该隔离的P型井区之间维持一空间；
一绝缘层，覆盖于该闸极与该厚场氧化层之上；
一漏极金属接点，具有一第一金属电极以接触该漏极扩散区；以及
一源极金属接点，具有一第二金属电极以接触该源极扩散区与该接点扩散区。
4.如权利要求1所述的晶体管，其特征在于，该P型区域与分开的P型区域群在该N型井区产生接面场效，以使一漂移区空乏。
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