TWI235492B - High voltage LDMOS transistor having an isolated structure - Google Patents

High voltage LDMOS transistor having an isolated structure Download PDF

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Publication number
TWI235492B
TWI235492B TW093123257A TW93123257A TWI235492B TW I235492 B TWI235492 B TW I235492B TW 093123257 A TW093123257 A TW 093123257A TW 93123257 A TW93123257 A TW 93123257A TW I235492 B TWI235492 B TW I235492B
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TW
Taiwan
Prior art keywords
region
electrode
type
oxide layer
source
Prior art date
Application number
TW093123257A
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English (en)
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TW200529429A (en
Inventor
Chih-Feng Huang
Ta-Yung Yang
Jenn-Yu Lin
Tuo-Hsin Chien
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System General Corp
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Publication of TWI235492B publication Critical patent/TWI235492B/zh
Publication of TW200529429A publication Critical patent/TW200529429A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0886—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Description

1235492 九、發明說明： 【發明所屬之技術領域】 本發明係與半導體元件相關 (lateral power MOSFET)。 尤指一種橫向功率金氧半場效電晶體 【先前技術】 電源積體電路(PowerIQ的發展領域中，單晶片製程的開發整 關與控制電路是目前主要的趨勢。LDM〇s製程特別應用於製作單石積體; 路。為了在橫向的方向上形成主要的電流路#，LDM〇s製程在半導體基板 的表面進行平面擴散(planar diffllsion)。由於橫向Μ〇·τ是使用典型:忙 製程所製造，因此控制f路與橫向辨觸卿了可以整合在—鱗石電源 圖1所7F為-個電源轉換器的方塊圖。—變麼器2〇〇為單石電源忙姻 的負載。- LDMOS電晶體100具有一汲極電極1〇、一源極電極2〇以及一 多晶石夕閘極電極40，用以對變壓胃200進行切換動作。一電阻4〇〇係用來 感測LDM0S電晶體1〇〇的切換電流.1§以進行功率控制。一控制器烟產 生控制訊號，絲鶴LDMOS電晶體⑽崎行功轉換。為了要降低 成本，並使切換效絲佳化，控制器3〇〇與ldm〇s電晶體觸係放置在 相同的基板上。LDM0S製程採用降低表面電場(reduced㈣咖e丨⑽咖fidd， RESURF)技術，结合低厚度遙晶(EPIMN型井區，可以達到高電壓兼具低導 通電阻的目標。 近年來，问壓LDMOS電晶體的開發技術相繼被提出，如美國專利案 4,811，075 14美國專利案5,258,636。這些先前技術的主要缺點是ldm〇S電 晶體具有較咼的導通電阻。而高崩潰電壓與低導通電阻LDM〇s電晶體的 相關技術也陸續公開，如美國專利案5,313,〇82、美國專利案6,525,39〇B2、 1235492 美國專利案6,570,219B1與美國專利案6,617,652B2。儘管目前可以製造出 高電壓與低導通電阻的LDMOS電晶體，但是製㈣複雜度會提高製造成 ’本’同時降低生產良率。倾的半導體技術還有—個缺財未隔離的源極 結構。未隔離的電晶體電流可能會在基板巾流動，並且在控㈣路挪產 生雜訊干擾。此外，LDMOS電晶體100的切換電流Is會產生一個接地彈跳 (gnnmdbcnmce)來干擾控制電路3〇〇。因此，只有隔離的LDMOs電晶體可 以限制電流流動，從而正確地量測流過電阻4〇〇的切換電流Is。為了解決 上述關題，本發服出—種LDM〇s結構，以義高歸、低導通 電阻與隔離特性的電晶體，進而達到整合單石積體電路的目標。 【發明内容】 。根據本發明，隔離的高壓LDMOS電晶體包含-p型基板。ldm〇s 電曰曰體更包含具有N型導電離子(⑽duetivity_type iQns)的第—擴散區與第 二擴散區，用以在P基板内形成_N型井區。第一擴散區更包含_沒極延 伸區。-沒極擴散區具有N+型導電離子形成一汲極區，而該汲極區係形成 於及極延伸區内。一第二擴散區具有p型導電離子在該沒極延伸區内形成 一 P型區域與數個分開的p型區域群，其巾該分賴p型區域群的位置比 區域更#近概極區。—源極擴散區具有N+型導電離子而形成一源極 區^接點擴散區具有p+型導電離子而形成—接點區…第四擴散區具有 導電離子而形成—隔離的p型井區以防止崩潰。其中位於該第二擴散區 的離的P型井區包圍住源極區與接點區。位於N型井區中的汲極延伸區 2的y型區域與分開的！>寵域群在N型井區產生接面場效，使漂移區空 乏因此會產生一個介於源極區與沒極區之間的傳導通道，並延伸穿過N 3L井區。分開的p型區域群可降低傳導通道的導通電阻。—多晶㈣極電 =形成於該傳導通道之上以控制該傳導通道的電流。此外，由第二擴散區 尘井區的。卩S為源極區提供一低阻抗路徑，以限制沒極區與源極 1235492 (區之間的電晶體電流。 要/主思的疋’以上的概述與接下來的詳細說明皆為示範性質，是為了 進步况明本發明的申請專利範圍，而有關本發明的其他 在後續的說明與圖表加以闡述。 〜”，、占將 【實施方式】 圖2為-個LDMOS電晶體1〇〇的剖面圖，LDM〇s電晶體1〇〇包含一 p型基板9〇。LDMOS電晶體1〇〇更包含具有N型導電離子之第一擴散區 33與第二擴散區37，為了在p型基板9〇内形成n型井區3〇。第一擴散區 33更包含-汲極延伸區5〇。由第一擴散區33形成的N型井區勒，汲極 擴散區53具有N+型導電離子，其於汲極延伸區5〇内產生一汲極區％。第 三擴散區具有P型導電離子，位於汲極延伸區5G内形成p麵域6〇與分 開=P型區域群61與幻。其中分開的p型區域群&與62比p型區域⑼ 更靠近汲極區52。由第二擴散區37形成的N型井區3〇内，源極擴散區％ 具有N+型導電離子’其產生一源極區％。由第二擴散區形成的n型井 區^内’接點擴散區57具有P+型導電離子，其產生一接點區％。由第二 擴放區37形成的>^型#區30内，第四擴散區67具有p型導電離 i隔離的p型賴65爾止赌。其幅_ p料^5\7住源^ 區56與接點區58。Ρ型區域6〇以及分開的Ρ型區域群ό1與62在Ν型井 區30内形成接面場效，-使得漂移區空乏。 一傳導通道形成於源極區56與汲極區52之間，並延伸穿過Ν型井區 3〇。分開的Ρ型區域群61與62可進_步降低傳導通道的導通電阻。一薄 閘極氧化層(thin gate 0Xide)81與-厚場氧化層(thick fleW 〇χ_ 87形成於ρ 型基板90之上。一多晶矽閘極電極4〇係位於薄閘極氧化層8i與厚場氧化 層87的部分之上，用以控制傳導通道的電流。一及極間隙(—η·㈣71係 形成於汲極擴散區53與厚場氧化層87之間，用以在汲極擴散區53與厚場 1235492 乳化層87之間維持—個空間。源極間隙(讀⑺娜)72係形成於厚場氧化層 87與隔_ P型魏65之間，収在厚場氧化層87與隔離的p型井區二 之間維持-個空間。祕_ 71與源極間隙72的適當配置可 丄 助於提升LDMOS電晶體應的崩潰電壓。汲極間隙71更可進—步降低傳 導通道的導通電阻。 ’ 絶緣層85與86覆盍在多晶石夕閘極電極4〇、厚場氧化層87與厚場氧化 層88之上。絕緣層85與86是採用如二氧化石夕所構成。一沒極金屬接點Μ 為-金屬電極，用以接觸汲極擴散區53。—源極金屬接點25，亦為一金屬 電極，用以接觸源極擴散區55與接點擴散區57。 圖3為圖2所示LDMOS電晶體1〇〇的俯視圖iDM〇s電晶體丨⑻包 含-汲極電極K)、-源極電極2〇、多晶石夕閘極電極4G，—汲極電極1〇所 用的焊塾(bonding _12、-源極電極20所用的烊塾22以及多晶石夕間極電 極40所用的焊墊42。 芩肊圖2與圖3，汲極延伸區50與汲極擴散區53形成汲極電極1〇。 隔離的P型井區65、源極擴散區55與接點擴散區57形成源極電極2〇。焊 墊12用於汲極電極1〇係連接至汲極金屬接點15。焊墊22用於源極電極 20係連接至源極金屬接點25。焊墊42係連接至多晶石夕閘極電極。在ρ 型區域60與分開的p型區域群61與62底下的N型井區30，係由汲極電 極10連接至源極電極2〇。在分開的p型區域群61與62之間的N型井區 ^0的部分可降低傳導通道的導通電阻。 P型區域60以及分開的p型區域群61與62位於汲極延伸區50内，在 N型井區30内形成一接面場效。其中n型井區30、p型區域6〇以及分開 的P型區域群61與62使漂移區空乏，而漂移區在n型井區3〇内建立電場， 並有助於提昇崩潰電壓。為了要達到高崩潰電壓，汲極延伸區5〇必須在崩 潰發生之前完全空乏。N型井區30、P型區域60以及分開的p型區域群61 與62能讓汲極延伸區50在崩潰發生前被空乏，即使漂移區具有高摻雜濃 1235492 度亦同。如此可讓漂狐允許較高的雜濃度以達到低電阻值的特性。 圖4顯示當650V電壓施加於L_s電晶體1〇〇的汲極區η時的带 場分佈情形。粗虛線分別標出 0V、100V、200V、3〇〇V、4Q()V、5()()v \ 600V以及650V等電壓。 、 此外，由第二擴散區37形成之N型井區3〇的部分為源極區％提供— 低阻抗路徑，並限制了汲極區52與源極區56之間的電晶體電流。/、 、本發_ LDMOS電晶體100採用簡單的結構來達成高崩潰電壓、低 導通電阻與隔離的特性。此外，在成本降低的同時良率也可獲得提昇。 熟悉此技藝者當可在不悖離本發明的精神與範疇之下，針對本發明的 結構進行各種修正與改變，由前述觀之，各種修正與改變只要合乎以下的 申請專利範圍及其等效解釋，皆可視為本發明的一部分。 、 【圖式簡單說明】 a在此所附之®表是用來清楚描述本發明，並引用為與構成詳細規格的 —部分，以下的圖表描繪出本發㈣的實施例，並配合詳細說明部份，用以 解釋本發明的原則。 圖1所示為電源轉換器的方塊圖； 圖2為根據本發明的較佳實施例之一 LDM〇s電晶體的剖面圖·， 圖3顯示為圖2的LDMOS電晶體的俯視圖； 圖4顯示根據本發明的較佳實施例，當650V電壓施加於LDMOS電晶體的 汲極區時所呈現的電場分佈。 【主要元件符號說明】 1 〇 '及極電極 12 及極電極所用的焊塾 15 及極金屬接點 源極電極 源極電極所用的焊墊 源極金屬接點 N型井區 具有N型導電離子之第一擴散區 具有N型導電離子之第二擴散區 閘極電極 多晶矽閘極電極所用的焊墊 没極延伸區 >及極區 具有N+型導電離子之汲極擴散區 具有N+型導電離子之源極擴散區 源極區 具有P+型導電離子之接點擴散區 接點區 P型區域 分開的P型區域群 分開的P型區域群 隔離的P型井區 具有P型導電離子之第四擴散區 汲極間隙 源極間隙 薄閘極氧化層 絕緣層 絕緣層 厚場氧化層 10 1235492 8 8 厚場氧化層 90 P型基板 10 0 LDM0S電晶體 200 變壓器 300控制器 4 0 0 電阻
5 0 0 電源1C

Claims (1)

1235492 3·如申請專利範圍第一項所述之電晶體，更包括·· 一薄閘極氧化層，形成於該傳導通道之上方； 一厚場氧化層，橫向地鄰接於該薄閘極氧化層； -汲極間隙，形成於紐極擴散區與該厚場氧化層之間，用以在該汲極 擴散區與該厚場氧化層之間維持一個空間，· -源極間隙，形成於該厚場氧化層與該隔離的ρ型井區之間，用以在該 厚場氧化層與該隔離的Ρ型井區之間維持一個空間； 一絕緣層，覆蓋於該多晶矽閘極電極與該厚場氧化層之上方； —沒極金屬接點，具有-第-金屬電極用以接觸紐極擴散區·以及 了原極金屬接點，具有-第二金屬電極用以接觸該源極擴舰與該接點 擴散區。 《如申請專利範圍第—撕述之電晶體，更包含： 及極焊塾’肋連接魏極金屬接點㈣魏極電極； 、和焊墊肖以連接该源極金屬接點而用於源極電極；以及 -閘極焊墊，用以連接於該多晶矽閘極電極。 _在二區ρ 型 13
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