CN1636640A - 清洁方法 - Google Patents
清洁方法 Download PDFInfo
- Publication number
- CN1636640A CN1636640A CNA2004101017256A CN200410101725A CN1636640A CN 1636640 A CN1636640 A CN 1636640A CN A2004101017256 A CNA2004101017256 A CN A2004101017256A CN 200410101725 A CN200410101725 A CN 200410101725A CN 1636640 A CN1636640 A CN 1636640A
- Authority
- CN
- China
- Prior art keywords
- solution
- cleaning
- aqueous
- water
- cleaning solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000004140 cleaning Methods 0.000 title claims abstract description 221
- 238000000034 method Methods 0.000 title claims description 80
- 239000000243 solution Substances 0.000 claims abstract description 209
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 87
- 239000012670 alkaline solution Substances 0.000 claims abstract description 27
- 238000002156 mixing Methods 0.000 abstract description 45
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 25
- 230000001590 oxidative effect Effects 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 239000001257 hydrogen Substances 0.000 abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 11
- 230000002378 acidificating effect Effects 0.000 abstract description 8
- 230000001603 reducing effect Effects 0.000 abstract description 4
- 239000003929 acidic solution Substances 0.000 abstract 2
- 239000000356 contaminant Substances 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 79
- 230000033116 oxidation-reduction process Effects 0.000 description 47
- 239000002253 acid Substances 0.000 description 33
- 229910021642 ultra pure water Inorganic materials 0.000 description 33
- 239000012498 ultrapure water Substances 0.000 description 33
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 26
- 239000010408 film Substances 0.000 description 24
- 239000002245 particle Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 15
- 238000007254 oxidation reaction Methods 0.000 description 15
- 229910052684 Cerium Inorganic materials 0.000 description 13
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000005416 organic matter Substances 0.000 description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 239000011241 protective layer Substances 0.000 description 11
- 239000011260 aqueous acid Substances 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229960002050 hydrofluoric acid Drugs 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000005342 ion exchange Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- AJIPIJNNOJSSQC-NYLIRDPKSA-N estetrol Chemical compound OC1=CC=C2[C@H]3CC[C@](C)([C@H]([C@H](O)[C@@H]4O)O)[C@@H]4[C@@H]3CCC2=C1 AJIPIJNNOJSSQC-NYLIRDPKSA-N 0.000 description 2
- 239000008214 highly purified water Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 244000005700 microbiome Species 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000003014 ion exchange membrane Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/29—Mixing systems, i.e. flow charts or diagrams
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/70—Treatment of water, waste water, or sewage by reduction
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/72—Treatment of water, waste water, or sewage by oxidation
- C02F1/78—Treatment of water, waste water, or sewage by oxidation with ozone
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0042—Reducing agents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/008—Control or steering systems not provided for elsewhere in subclass C02F
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
- C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2201/00—Apparatus for treatment of water, waste water or sewage
- C02F2201/78—Details relating to ozone treatment devices
- C02F2201/782—Ozone generators
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2209/00—Controlling or monitoring parameters in water treatment
- C02F2209/04—Oxidation reduction potential [ORP]
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2209/00—Controlling or monitoring parameters in water treatment
- C02F2209/06—Controlling or monitoring parameters in water treatment pH
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Hydrology & Water Resources (AREA)
- Water Supply & Treatment (AREA)
- Environmental & Geological Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
Claims (1)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP072175/96 | 1996-03-27 | ||
JP07217596A JP3590470B2 (ja) | 1996-03-27 | 1996-03-27 | 洗浄水生成方法および洗浄方法ならびに洗浄水生成装置および洗浄装置 |
JP072175/1996 | 1996-03-27 |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021028222A Division CN100413606C (zh) | 1996-03-27 | 1997-03-27 | 清洁溶液的制造方法及其清洁方法 |
CNB971019592A Division CN1148267C (zh) | 1996-03-27 | 1997-03-27 | 清洁方法及其所用的装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1636640A true CN1636640A (zh) | 2005-07-13 |
CN1636640B CN1636640B (zh) | 2012-06-06 |
Family
ID=13481638
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021028222A Expired - Lifetime CN100413606C (zh) | 1996-03-27 | 1997-03-27 | 清洁溶液的制造方法及其清洁方法 |
CNB971019592A Expired - Lifetime CN1148267C (zh) | 1996-03-27 | 1997-03-27 | 清洁方法及其所用的装置 |
CN2004101017256A Expired - Lifetime CN1636640B (zh) | 1996-03-27 | 1997-03-27 | 清洁溶液的制造方法和使用该清洁溶液的清洁方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021028222A Expired - Lifetime CN100413606C (zh) | 1996-03-27 | 1997-03-27 | 清洁溶液的制造方法及其清洁方法 |
CNB971019592A Expired - Lifetime CN1148267C (zh) | 1996-03-27 | 1997-03-27 | 清洁方法及其所用的装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6039815A (zh) |
JP (1) | JP3590470B2 (zh) |
KR (1) | KR100242271B1 (zh) |
CN (3) | CN100413606C (zh) |
Families Citing this family (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998008248A1 (fr) * | 1996-08-20 | 1998-02-26 | Organo Corporation | Procede et dispositif pour laver des composants electroniques ou similaires |
JP3296405B2 (ja) * | 1996-08-20 | 2002-07-02 | オルガノ株式会社 | 電子部品部材類の洗浄方法及び洗浄装置 |
US6007406A (en) | 1997-12-04 | 1999-12-28 | Micron Technology, Inc. | Polishing systems, methods of polishing substrates, and method of preparing liquids for semiconductor fabrication process |
US6849153B2 (en) * | 1998-04-16 | 2005-02-01 | Siemens Aktiengesellschaft | Removal of post-rie polymer on A1/CU metal line |
JP2000117208A (ja) * | 1998-10-13 | 2000-04-25 | Kurita Water Ind Ltd | 電子材料の洗浄方法 |
US20050229946A1 (en) * | 1998-11-12 | 2005-10-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and apparatus |
US20010001392A1 (en) * | 1998-11-12 | 2001-05-24 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and apparatus |
JP4005249B2 (ja) * | 1999-01-12 | 2007-11-07 | 株式会社 ユニップ | ガラス基板の表面処理方法 |
JP4484980B2 (ja) * | 1999-05-20 | 2010-06-16 | 株式会社ルネサステクノロジ | フォトマスクの洗浄方法、洗浄装置およびフォトマスクの洗浄液 |
JP3557601B2 (ja) * | 1999-07-15 | 2004-08-25 | 東京エレクトロン株式会社 | 洗浄・乾燥処理装置及びその方法 |
US6743301B2 (en) | 1999-12-24 | 2004-06-01 | mFSI Ltd. | Substrate treatment process and apparatus |
KR100342376B1 (ko) * | 2000-03-21 | 2002-07-02 | 송재필 | 모포세척용 화공약품 자동공급장치 |
JP2001312817A (ja) * | 2000-04-26 | 2001-11-09 | Fuji Electric Co Ltd | 磁気記録媒体用ガラス基板の洗浄方法、該洗浄方法により洗浄された磁気記録媒体用ガラス基板、および該基板を使用した磁気記録媒体 |
JP2002009035A (ja) * | 2000-06-26 | 2002-01-11 | Toshiba Corp | 基板洗浄方法及び基板洗浄装置 |
JP3908443B2 (ja) | 2000-06-30 | 2007-04-25 | 株式会社東芝 | 基板処理方法 |
KR100712980B1 (ko) * | 2000-10-19 | 2007-05-02 | 주식회사 하이닉스반도체 | 화학 기계적 연마 세정방법 |
US20020121286A1 (en) * | 2001-01-04 | 2002-09-05 | Applied Materials, Inc. | Rinsing solution and rinsing and drying methods for the prevention of watermark formation on a surface |
JP2002261063A (ja) * | 2001-03-05 | 2002-09-13 | Texas Instr Japan Ltd | 半導体ウェハ上の粒子を除去する方法及び装置 |
JP2002261062A (ja) * | 2001-03-05 | 2002-09-13 | Texas Instr Japan Ltd | 半導体ウェハ上の粒子を除去する方法及び装置 |
US6584989B2 (en) | 2001-04-17 | 2003-07-01 | International Business Machines Corporation | Apparatus and method for wet cleaning |
JP4000247B2 (ja) * | 2001-04-18 | 2007-10-31 | 株式会社ルネサステクノロジ | フォトマスクの洗浄方法 |
US6649535B1 (en) * | 2002-02-12 | 2003-11-18 | Taiwan Semiconductor Manufacturing Company | Method for ultra-thin gate oxide growth |
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- 1997-03-27 CN CNB021028222A patent/CN100413606C/zh not_active Expired - Lifetime
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- 1997-03-27 CN CN2004101017256A patent/CN1636640B/zh not_active Expired - Lifetime
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CN1494955A (zh) | 2004-05-12 |
CN100413606C (zh) | 2008-08-27 |
CN1636640B (zh) | 2012-06-06 |
JP3590470B2 (ja) | 2004-11-17 |
KR970067681A (ko) | 1997-10-13 |
JPH09255998A (ja) | 1997-09-30 |
US6039815A (en) | 2000-03-21 |
KR100242271B1 (ko) | 2000-02-01 |
CN1148267C (zh) | 2004-05-05 |
US5983909A (en) | 1999-11-16 |
CN1163802A (zh) | 1997-11-05 |
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