KR970067681A - 세정방법 및 세정장치 - Google Patents

세정방법 및 세정장치 Download PDF

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KR970067681A
KR970067681A KR1019970010567A KR19970010567A KR970067681A KR 970067681 A KR970067681 A KR 970067681A KR 1019970010567 A KR1019970010567 A KR 1019970010567A KR 19970010567 A KR19970010567 A KR 19970010567A KR 970067681 A KR970067681 A KR 970067681A
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water
washing
alkaline
acidic
washing water
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오의열
켄이치 미쯔모리
사토시 미야자와
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아베 아키라
가부시키가이샤 프론테크
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20—Mixing gases with liquids
    • B01F23/29—Mixing systems, i.e. flow charts or diagrams
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/70—Treatment of water, waste water, or sewage by reduction
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation
    • C02F1/78—Treatment of water, waste water, or sewage by oxidation with ozone
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0042—Reducing agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/008—Control or steering systems not provided for elsewhere in subclass C02F
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/30—Treatment of water, waste water, or sewage by irradiation
    • C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/78—Details relating to ozone treatment devices
    • C02F2201/782—Ozone generators
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/04—Oxidation reduction potential [ORP]
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/06—Controlling or monitoring parameters in water treatment pH
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Engineering & Computer Science (AREA)
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  • Wood Science & Technology (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

액정기판이나 IC 등 전자 부품의 웨트세정에 있어서, 산성이나 알칼리성의 용액에 의한 기판의 세정으로는, 기판에 데미지를 준다. 또, 초순수는 세정력이 약하고, 기판 표면의 부착물이 제거되기 어려웠다.
오존수와 산성 용액 또는 알칼리성 용액을 혼합하여, 산화력이 있고 동시에 산성인 세정수① 또는, 산화력이 있고 동시에 알칼리성인 세정수③을 생성한다. 또, 수소수와 산성 용액 또는 알칼리성 용액을 혼합하여 환원력이 있고 동시에 알칼리성인 세정수② 혹은, 환원력이 있고 동시에 산성인 세정수④를 생성한다. 이들의 세정수는 세정력이 높고, ORP나 pH를 각각 조절할 수 있다. 따라서, 피세정물의 제조공정에 따른 부착물의 종류에 대응하여 세정수를 선택할 수 있고, 1개의 세정수로 복수종의 부착물을 세정할 수 있다.

Description

세정방법 및 세정장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도는 본 발명에서 세정장치의 전체구조를 나타내는 장치 구성도이고, 도1b는 세정장치에 사용되고 있는 전기분해장치의 구성도이다.

Claims (10)

  1. 산화력이 있고 동시에 알칼리성인 세정수로 피세정물을 세정하는 것을 특징으로 하는 세정방법.
  2. 제1항에 있어서, 상기 산화력이 있고 동시에 알칼리성인 세정수가, 오존수와 알칼리성 용액이 혼합된 것인 것을 특징으로 하는 세정방법.
  3. 환원력이 있고 동시에 산성인 세정수로 피세정물을 세정하는 것을 특징으로 하는 세정방법.
  4. 제3항에 있어서, 상기 환원력이 있고 동시에 산성인 세정수가 수소수와 산성용액이 혼합된 것인 것을 특징으로 하는 세정방법.
  5. 오존수와 산성 용액을 혼합하여 산화력이 있고 동시에 산성인 세정수를 생성하고, 이 세정수로 피세정물을 세정하는 것을 특징으로 하는 세정방법.
  6. 수소수와 알칼리성을 용액을 혼합하여 환원력이 있고 동시에 알칼리성인 세정수를 생성하고, 이 세정수로 페세정물을 세정하는 것을 특징으로 하는 세정방법.
  7. 오존수가 또는 수소가스인 어느 한쪽을 선택하여 순수에 용해하여 오존수 또는 수소수를 생성하고, 상기 오존수에 산성 용액 또는 알칼리성 용액의 어느 한쪽을 선택하여 혼합하는 것에 의하여 2종의 세정수의 어느것을 생성하고, 또는 상기 수소수에 산성용액 또는 알칼리성 용액의 어느 한 쪽을 선택하여 혼합하는 것에 의하여 2종의 세정수의 어느 것을 선택하여 생성하고, 상기 4종 세정수의 어느 것을 사용하여 피세정물을 세정하는 것을 특징으로 하는 세정방법.
  8. 산화력이 있고 동시에 산성인 세정수, 환원력이 있고 동시에 알칼리성인 세정수, 산화력이 있고 동시에 알칼리성인 세정수, 환원력이 있고 동시에 산성인 세정수 중 어느것을 선택하여 생성하는 세정수의 생성부와, 상기 생성부에서 생성된 어느 것의 세정수가 선택되어 공급되는 세정실을 가지는 것을 특징으로 하는 세정장치.
  9. 제8항에 있어서, 상기 세정수의 생성부는, 오존가스를 발생시키는 장치 및 수소가스를 발생시키는 장치와, 상기 오존가스 또는 수소가스의 어느 것을 순수에 용해시켜 오존수 또는 수소수를 생성하는 혼합장치와, 상기 오존수 또는 수소수에, 산용 용액 또는 알칼리성 용액의 어느 한 쪽을 혼합시키는 혼합장치를 가지고 있는 것을 특징으로 하는 세정장치.
  10. 제9항에 있어서, 오존가스와 수소가스는, 모두 공통의 전기분해장치로부터 얻어지는 것을 특징으로 하는 세정장치.
KR1019970010567A 1996-03-27 1997-03-26 세정방법 및 세정장치 KR100242271B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07217596A JP3590470B2 (ja) 1996-03-27 1996-03-27 洗浄水生成方法および洗浄方法ならびに洗浄水生成装置および洗浄装置
JP8-72175 1996-03-27

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KR100242271B1 KR100242271B1 (ko) 2000-02-01

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Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998008248A1 (fr) * 1996-08-20 1998-02-26 Organo Corporation Procede et dispositif pour laver des composants electroniques ou similaires
JP3296405B2 (ja) * 1996-08-20 2002-07-02 オルガノ株式会社 電子部品部材類の洗浄方法及び洗浄装置
US6007406A (en) 1997-12-04 1999-12-28 Micron Technology, Inc. Polishing systems, methods of polishing substrates, and method of preparing liquids for semiconductor fabrication process
US6849153B2 (en) * 1998-04-16 2005-02-01 Siemens Aktiengesellschaft Removal of post-rie polymer on A1/CU metal line
JP2000117208A (ja) * 1998-10-13 2000-04-25 Kurita Water Ind Ltd 電子材料の洗浄方法
US20050229946A1 (en) * 1998-11-12 2005-10-20 Dainippon Screen Mfg. Co., Ltd. Substrate treating method and apparatus
US20010001392A1 (en) * 1998-11-12 2001-05-24 Dainippon Screen Mfg. Co., Ltd. Substrate treating method and apparatus
JP4005249B2 (ja) * 1999-01-12 2007-11-07 株式会社 ユニップ ガラス基板の表面処理方法
JP4484980B2 (ja) * 1999-05-20 2010-06-16 株式会社ルネサステクノロジ フォトマスクの洗浄方法、洗浄装置およびフォトマスクの洗浄液
JP3557601B2 (ja) * 1999-07-15 2004-08-25 東京エレクトロン株式会社 洗浄・乾燥処理装置及びその方法
US6743301B2 (en) 1999-12-24 2004-06-01 mFSI Ltd. Substrate treatment process and apparatus
KR100342376B1 (ko) * 2000-03-21 2002-07-02 송재필 모포세척용 화공약품 자동공급장치
JP2001312817A (ja) * 2000-04-26 2001-11-09 Fuji Electric Co Ltd 磁気記録媒体用ガラス基板の洗浄方法、該洗浄方法により洗浄された磁気記録媒体用ガラス基板、および該基板を使用した磁気記録媒体
JP2002009035A (ja) * 2000-06-26 2002-01-11 Toshiba Corp 基板洗浄方法及び基板洗浄装置
JP3908443B2 (ja) 2000-06-30 2007-04-25 株式会社東芝 基板処理方法
KR100712980B1 (ko) * 2000-10-19 2007-05-02 주식회사 하이닉스반도체 화학 기계적 연마 세정방법
US20020121286A1 (en) * 2001-01-04 2002-09-05 Applied Materials, Inc. Rinsing solution and rinsing and drying methods for the prevention of watermark formation on a surface
JP2002261063A (ja) * 2001-03-05 2002-09-13 Texas Instr Japan Ltd 半導体ウェハ上の粒子を除去する方法及び装置
JP2002261062A (ja) * 2001-03-05 2002-09-13 Texas Instr Japan Ltd 半導体ウェハ上の粒子を除去する方法及び装置
US6584989B2 (en) 2001-04-17 2003-07-01 International Business Machines Corporation Apparatus and method for wet cleaning
JP4000247B2 (ja) * 2001-04-18 2007-10-31 株式会社ルネサステクノロジ フォトマスクの洗浄方法
US6649535B1 (en) * 2002-02-12 2003-11-18 Taiwan Semiconductor Manufacturing Company Method for ultra-thin gate oxide growth
JP4076365B2 (ja) * 2002-04-09 2008-04-16 シャープ株式会社 半導体洗浄装置
KR100484067B1 (ko) * 2002-06-12 2005-04-20 동부아남반도체 주식회사 반도체 소자의 제조 방법
KR100470722B1 (ko) * 2002-07-09 2005-03-10 삼성전자주식회사 반도체 장치의 콘택홀 형성방법
JP2004128251A (ja) * 2002-10-03 2004-04-22 Elpida Memory Inc 塗布機及び塗布方法
KR100520819B1 (ko) * 2003-02-25 2005-10-12 삼성전자주식회사 기판의 세정 방법
KR100412258B1 (ko) * 2003-07-01 2003-12-31 주식회사 에스에프에이 오존수를 이용한 엘시디기판 세정방법
US20050034742A1 (en) * 2003-08-11 2005-02-17 Kaijo Corporation Cleaning method and cleaning apparatus
EP1730266A2 (en) * 2004-03-29 2006-12-13 Monsanto Technology, LLC Sperm suspensions for sorting into x or y chromosome-bearing enriched populations
JP3972369B2 (ja) * 2004-04-05 2007-09-05 船井電機株式会社 ボールグリッドアレイ実装構造
WO2006034030A1 (en) * 2004-09-17 2006-03-30 Fsi International, Inc. Using ozone to process wafer like objects
KR100639710B1 (ko) * 2005-03-17 2006-10-30 세메스 주식회사 약액 혼합 공급 방법
JP2007049022A (ja) * 2005-08-11 2007-02-22 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
US7334625B2 (en) * 2005-09-19 2008-02-26 United Technologies Corporation Manufacture of casting cores
TW200722554A (en) * 2005-12-13 2007-06-16 Ind Tech Res Inst Method of inhibiting metal corrosion
EP2428557A1 (en) * 2005-12-30 2012-03-14 LAM Research Corporation Cleaning solution
JP2008182188A (ja) * 2006-12-27 2008-08-07 Siltronic Ag 電子材料用洗浄液および洗浄方法
SG144040A1 (en) * 2006-12-27 2008-07-29 Siltronic Ag Cleaning liquid and cleaning method for electronic material
US8071526B2 (en) * 2007-03-14 2011-12-06 Food Safety Technology, Llc Aqueous ozone solution for ozone cleaning system
US8735337B2 (en) * 2007-03-13 2014-05-27 Food Safety Technology, Llc Aqueous ozone solution for ozone cleaning system
DE102007030957A1 (de) * 2007-07-04 2009-01-08 Siltronic Ag Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung
TWI446400B (zh) 2007-10-05 2014-07-21 Schott Ag Fluorescent lamp with lamp cleaning method
US8492288B2 (en) * 2008-06-10 2013-07-23 Micron Technology, Inc. Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates
US9174845B2 (en) 2008-07-24 2015-11-03 Food Safety Technology, Llc Ozonated liquid dispensing unit
US9522348B2 (en) 2008-07-24 2016-12-20 Food Safety Technology, Llc Ozonated liquid dispensing unit
KR20120028079A (ko) * 2010-09-14 2012-03-22 삼성모바일디스플레이주식회사 기판의 세정 장치 및 세정 방법
JP2013045961A (ja) * 2011-08-25 2013-03-04 Dainippon Screen Mfg Co Ltd 基板洗浄方法、基板洗浄液および基板処理装置
US11493998B2 (en) 2012-01-17 2022-11-08 Ultrahaptics IP Two Limited Systems and methods for machine control
US8693731B2 (en) * 2012-01-17 2014-04-08 Leap Motion, Inc. Enhanced contrast for object detection and characterization by optical imaging
CN102825028B (zh) * 2012-09-11 2015-07-08 同济大学 一种ycob晶体抛光表面的清洗方法
US10005990B2 (en) 2013-02-01 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning method for semiconductor device fabrication
US9881816B2 (en) 2013-02-01 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and method for semiconductor device fabrication
JP6149421B2 (ja) * 2013-02-20 2017-06-21 栗田工業株式会社 溶液の供給方法及び供給装置
CN103962346B (zh) * 2014-05-21 2016-08-24 深圳市华星光电技术有限公司 可调整紫外光照射能量的紫外光清洗基板的方法
CN104307781A (zh) * 2014-08-27 2015-01-28 富乐德科技发展（天津）有限公司 去除附着于陶瓷零件表面氧化物薄膜的清洗方法
TWI630034B (zh) * 2014-09-18 2018-07-21 台灣積體電路製造股份有限公司 半導體基板的清潔方法與半導體裝置的製作方法
KR101506213B1 (ko) 2014-11-18 2015-03-27 주식회사 엘피케이 매엽식 감광성 수지막 제거장치
JP6154860B2 (ja) * 2015-07-17 2017-06-28 野村マイクロ・サイエンス株式会社 洗浄用水素水の製造方法及び製造装置
KR101693328B1 (ko) * 2016-01-11 2017-01-05 (주) 세아그린텍 자가 세정 폐가스 처리 장치
DE102016109771B4 (de) * 2016-05-27 2020-09-10 Brooks Automation (Germany) Gmbh Verfahren zum Reinigen einer Kunststoffoberfläche
CN109475826B (zh) * 2016-07-27 2021-11-02 夏普株式会社 氢水生成装置
JP6169762B1 (ja) * 2016-08-02 2017-07-26 ＭｉＺ株式会社 水素水の生成方法
GB201804881D0 (en) * 2018-03-27 2018-05-09 Lam Res Ag Method of producing rinsing liquid
US20190341276A1 (en) * 2018-05-03 2019-11-07 Applied Materials, Inc. Integrated semiconductor part cleaning system
CN108587816A (zh) * 2018-05-18 2018-09-28 邵博伟 一种富氢液态生物洗涤剂及其制备方法与应用
CN108370748A (zh) * 2018-05-28 2018-08-07 邵博伟 一种富氢液态盐碱地生物改良剂及其制备方法与应用
US20220143780A1 (en) * 2020-11-11 2022-05-12 Applied Materials, Inc. Substrate handling in a modular polishing system with single substrate cleaning chambers
CN114656073A (zh) * 2021-03-11 2022-06-24 永保纳米科技(深圳)有限公司 酸性臭氧水及其制备方法和制备装置、臭氧冰

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331002A (en) * 1976-09-03 1978-03-23 Miura Seisakusho Kk Acid detergent for use in boiler
US4339281A (en) * 1981-08-20 1982-07-13 Rca Corporation Shank diamond cleaning
JPS59104132A (ja) * 1982-12-07 1984-06-15 Fujitsu Ltd 洗浄方法
DE3440315A1 (de) * 1984-11-05 1986-05-15 Silberzahn, Helmut, 6950 Mosbach Anlage zum reinigen und sterilisieren von gefaessen
SU1424072A1 (ru) * 1986-10-31 1988-09-15 Московский авиационный технологический институт им.К.Э.Циолковского Способ очистки поверхности кремни
JPH0199221A (ja) * 1987-10-12 1989-04-18 Nec Corp 半導体基板の洗浄方法
JPH02164035A (ja) * 1988-12-19 1990-06-25 Nec Corp 半導体基板の洗浄方法
JPH0791554B2 (ja) * 1989-06-21 1995-10-04 高砂香料工業株式会社 香料組成物
US5190627A (en) * 1989-11-07 1993-03-02 Ebara Corporation Process for removing dissolved oxygen from water and system therefor
JP2722273B2 (ja) * 1990-06-28 1998-03-04 株式会社荏原総合研究所 洗浄処理方法
JPH0466176A (ja) * 1990-07-04 1992-03-02 Seiko Epson Corp 高分子体の水切り乾燥方法
JPH0479221A (ja) * 1990-07-20 1992-03-12 Seiko Epson Corp 半導体装置の製造方法
JPH07114191B2 (ja) * 1990-11-14 1995-12-06 株式会社荏原総合研究所 洗浄方法
DE69231971T2 (de) * 1991-01-24 2002-04-04 Wako Pure Chem Ind Ltd Lösungen zur Oberflächenbehandlung von Halbleitern
JPH05166776A (ja) * 1991-12-13 1993-07-02 Nippon Steel Corp 半導体ウェーハの洗浄方法およびその装置
JP2884948B2 (ja) * 1992-10-02 1999-04-19 日本電気株式会社 半導体基板の処理方法
JP2859081B2 (ja) * 1993-01-08 1999-02-17 日本電気株式会社 ウェット処理方法及び処理装置
US5599438A (en) * 1994-03-25 1997-02-04 Nec Corporation Method for producing electrolyzed water
JP2743823B2 (ja) * 1994-03-25 1998-04-22 日本電気株式会社 半導体基板のウエット処理方法
JPH07324199A (ja) * 1994-04-06 1995-12-12 Mitsubishi Chem Corp 洗浄組成物およびそれを用いた半導体基板の洗浄方法
JP3431266B2 (ja) * 1994-04-12 2003-07-28 ペンタックス株式会社 内視鏡洗浄消毒装置
JP3046208B2 (ja) * 1994-08-05 2000-05-29 新日本製鐵株式会社 シリコンウェハおよびシリコン酸化物の洗浄液
JPH08112573A (ja) * 1994-08-26 1996-05-07 Toyota Central Res & Dev Lab Inc 洗浄装置および洗浄方法
JP3181796B2 (ja) * 1994-10-28 2001-07-03 日本電気株式会社 電解水製造装置
JPH08126873A (ja) * 1994-10-28 1996-05-21 Nec Corp 電子部品等の洗浄方法及び装置
KR100392828B1 (ko) * 1995-10-13 2003-10-17 램 리서치 코포레이션 브러시를통한화학약품공급방법및장치

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