CN1561550A - 霍尔器件和磁传感器 - Google Patents
霍尔器件和磁传感器 Download PDFInfo
- Publication number
- CN1561550A CN1561550A CNA028194276A CN02819427A CN1561550A CN 1561550 A CN1561550 A CN 1561550A CN A028194276 A CNA028194276 A CN A028194276A CN 02819427 A CN02819427 A CN 02819427A CN 1561550 A CN1561550 A CN 1561550A
- Authority
- CN
- China
- Prior art keywords
- sensing part
- magnet sensing
- protuberance
- hall
- hall device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
- G01R33/075—Hall devices configured for spinning current measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP305715/2001 | 2001-10-01 | ||
JP2001305715 | 2001-10-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1561550A true CN1561550A (zh) | 2005-01-05 |
CN100367526C CN100367526C (zh) | 2008-02-06 |
Family
ID=19125463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028194276A Expired - Fee Related CN100367526C (zh) | 2001-10-01 | 2002-09-30 | 霍尔器件和磁传感器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7372119B2 (zh) |
JP (1) | JP4417107B2 (zh) |
KR (1) | KR100604294B1 (zh) |
CN (1) | CN100367526C (zh) |
WO (1) | WO2003032410A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101369009B (zh) * | 2007-08-14 | 2013-03-27 | 新科实业有限公司 | 磁传感器及其制造方法 |
CN103278783A (zh) * | 2013-05-10 | 2013-09-04 | 中国科学院物理研究所 | 磁场传感器和霍尔器件 |
CN104535087A (zh) * | 2014-12-26 | 2015-04-22 | 上海集成电路研发中心有限公司 | 霍尔元件及霍尔元件结构 |
CN105652220A (zh) * | 2014-11-27 | 2016-06-08 | 精工半导体有限公司 | 霍尔传感器及其温度分布造成的偏移的补偿方法 |
CN107078209A (zh) * | 2014-10-21 | 2017-08-18 | 旭化成微电子株式会社 | 霍尔元件 |
CN108508383A (zh) * | 2018-03-28 | 2018-09-07 | 中国科学院西安光学精密机械研究所 | 具有阈值调整功能的霍尔片、霍尔传感器及阈值调整方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7015557B2 (en) | 2004-04-16 | 2006-03-21 | Honeywell International Inc. | Hall element with segmented field plate |
DE102005051306A1 (de) * | 2004-10-28 | 2006-06-08 | Denso Corp., Kariya | Vertikale Hallvorrichtung und Verfahren zur Einstellung der Offsetspannung einer vertikalen Hallvorrichtung |
JP4924308B2 (ja) * | 2004-11-12 | 2012-04-25 | 株式会社デンソー | 縦型ホール素子 |
JP2006179594A (ja) * | 2004-12-21 | 2006-07-06 | Denso Corp | ホール素子 |
KR100849383B1 (ko) * | 2006-09-01 | 2008-07-31 | 상지대학교산학협력단 | 홀소자를 이용한 맥진 센서 |
US20110037464A1 (en) * | 2009-08-11 | 2011-02-17 | Bruce Alvin Gurney | Tunable graphene magnetic field sensor |
JP5815986B2 (ja) * | 2010-07-05 | 2015-11-17 | セイコーインスツル株式会社 | ホールセンサ |
JP5679906B2 (ja) * | 2010-07-05 | 2015-03-04 | セイコーインスツル株式会社 | ホールセンサ |
US8357983B1 (en) * | 2011-08-04 | 2013-01-22 | Allegro Microsystems, Inc. | Hall effect element having a wide cross shape with dimensions selected to result in improved performance characteristics |
US9276197B2 (en) * | 2013-11-21 | 2016-03-01 | The United States Of America As Represented By The Secretary Of The Navy | Hybrid domain wall-hall cross device |
US10353017B2 (en) * | 2014-08-13 | 2019-07-16 | The Timken Company | Hall effect sensor and system with improved sensitivity |
US20170288131A1 (en) * | 2016-03-29 | 2017-10-05 | Globalfoundries Singapore Pte. Ltd. | Integrated hall effect sensors with voltage controllable sensitivity |
EP3367110B1 (en) * | 2017-02-24 | 2024-04-17 | Monolithic Power Systems, Inc. | Current sensing system and current sensing method |
TWI661586B (zh) * | 2017-12-19 | 2019-06-01 | 宋國明 | Distance detection chip using linear magnetoelectric crystal |
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US3082507A (en) * | 1963-03-26 | Magnetically responsive resistance device | ||
JPS54157485A (en) * | 1978-06-02 | 1979-12-12 | Agency Of Ind Science & Technol | Planar semiconductor device |
US4195305A (en) * | 1978-09-25 | 1980-03-25 | Varian Associates, Inc. | Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system |
US4690714A (en) * | 1979-01-29 | 1987-09-01 | Li Chou H | Method of making active solid state devices |
JPS55132066A (en) | 1979-04-02 | 1980-10-14 | Matsushita Electronics Corp | Hall effect semiconductor integrated circuit |
JPS5939896B2 (ja) * | 1979-04-02 | 1984-09-27 | ジヤパンエレクトロニクス株式会社 | コンデンサ−及び固定抵抗器等のリ−ド線成形機 |
JPS5948970A (ja) | 1982-09-13 | 1984-03-21 | Pioneer Electronic Corp | 磁電変換素子 |
CH662905A5 (de) * | 1983-12-19 | 1987-10-30 | Landis & Gyr Ag | Integrierbares hallelement. |
JPS62174984A (ja) * | 1985-08-09 | 1987-07-31 | Murata Mfg Co Ltd | ホ−ル素子 |
GB2180082B (en) * | 1985-09-03 | 1988-08-17 | Citizen Watch Co Ltd | Electronic equipment with geomagnetic direction sensor |
JPH06103761B2 (ja) | 1989-04-14 | 1994-12-14 | 株式会社村田製作所 | 4相差動回転センサー |
JP2557998B2 (ja) | 1990-04-04 | 1996-11-27 | 旭化成工業株式会社 | InAsホール効果素子 |
US5184106A (en) * | 1991-01-28 | 1993-02-02 | General Motors Corporation | Magnetic field sensor with improved electron mobility |
JPH04279071A (ja) * | 1991-03-07 | 1992-10-05 | Murata Mfg Co Ltd | ホール素子 |
WO1992017908A1 (en) * | 1991-03-28 | 1992-10-15 | Asahi Kasei Kogyo Kabushiki Kaisha | Field effect transistor |
JP3069545B2 (ja) | 1991-07-16 | 2000-07-24 | 旭化成工業株式会社 | 化合物半導体を含む積層体およびその製造方法 |
JP2793440B2 (ja) | 1991-07-16 | 1998-09-03 | 旭化成工業株式会社 | 磁気センサおよびその製造方法 |
US5453727A (en) * | 1991-07-16 | 1995-09-26 | Asahi Kasai Kogyo Kabushiki Kaisha | Semiconductor sensors and method for fabricating the same |
JPH05297084A (ja) | 1992-04-15 | 1993-11-12 | Toyota Motor Corp | 地磁気センサ装置 |
JPH06125122A (ja) | 1992-10-09 | 1994-05-06 | Nippon Autom Kk | 磁気抵抗素子及びその取付基板並びに該磁気抵抗素子と取付基板を用いた磁気センサ |
JP2888074B2 (ja) | 1993-01-25 | 1999-05-10 | 三菱電機株式会社 | 磁気抵抗素子 |
US5385864A (en) * | 1993-05-28 | 1995-01-31 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating semiconductor thin film and a Hall-effect device |
JPH07193297A (ja) * | 1993-12-27 | 1995-07-28 | Toshiba Corp | ホール素子 |
JP3583458B2 (ja) | 1994-03-09 | 2004-11-04 | 株式会社東芝 | ホール素子 |
JPH07283390A (ja) | 1994-04-04 | 1995-10-27 | Asahi Chem Ind Co Ltd | オーミック電極 |
US5543727A (en) * | 1994-04-05 | 1996-08-06 | Bellsouth Corporation | Run-in test system for PC circuit board |
US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
US5883564A (en) * | 1994-04-18 | 1999-03-16 | General Motors Corporation | Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer |
US5491461A (en) * | 1994-05-09 | 1996-02-13 | General Motors Corporation | Magnetic field sensor on elemental semiconductor substrate with electric field reduction means |
JPH0888423A (ja) | 1994-09-19 | 1996-04-02 | Asahi Chem Ind Co Ltd | 磁気センサ |
US5654558A (en) * | 1994-11-14 | 1997-08-05 | The United States Of America As Represented By The Secretary Of The Navy | Interband lateral resonant tunneling transistor |
JP3681425B2 (ja) | 1995-01-24 | 2005-08-10 | 旭化成エレクトロニクス株式会社 | GaAsホール素子 |
JPH08242027A (ja) | 1995-03-03 | 1996-09-17 | Mitsubishi Electric Corp | 磁気抵抗素子回路 |
JP3547234B2 (ja) | 1995-10-18 | 2004-07-28 | 旭化成エレクトロニクス株式会社 | ホール素子とその製造方法 |
JPH09203748A (ja) | 1996-01-29 | 1997-08-05 | Tokin Corp | 半導体加速度センサ |
JPH09219547A (ja) | 1996-02-09 | 1997-08-19 | Sony Corp | 磁気抵抗素子 |
DE69720854T2 (de) | 1996-05-29 | 2003-11-20 | Fujitsu Takamisawa Component | Führungsvorrichtung zum Verschieben und Positionieren eines Zeigers auf einem Computerbildschirm |
JPH1074308A (ja) | 1996-08-30 | 1998-03-17 | Hitachi Ltd | 磁気スイッチング素子及びそれを用いた磁気センサと磁気記録再生装置 |
JPH11183579A (ja) * | 1997-12-17 | 1999-07-09 | Toshiba Corp | ホール素子、及びホール素子を用いた検出装置 |
JP2000035469A (ja) * | 1998-07-17 | 2000-02-02 | Toshiba Corp | 半導体ホールセンサー |
EP1813954A1 (en) * | 1998-08-07 | 2007-08-01 | Asahi Kasei Kabushiki Kaisha | Magnetic sensor and production method thereof |
JP2000183424A (ja) | 1998-12-15 | 2000-06-30 | Hitachi Cable Ltd | 化合物半導体多層薄膜及び半導体装置 |
US6630882B1 (en) * | 1999-08-05 | 2003-10-07 | Delphi Technologies, Inc. | Composite magnetic sensor |
KR100341991B1 (ko) | 1999-12-24 | 2002-06-26 | 윤종용 | 휴대폰의 통화대기시 전류소모 절감장치 |
GB2362505A (en) * | 2000-05-19 | 2001-11-21 | Secr Defence | Magnetic Field Sensor |
JP2001352369A (ja) * | 2000-06-07 | 2001-12-21 | Nec Saitama Ltd | 折り畳み型携帯通信機 |
JP2002007059A (ja) * | 2000-06-27 | 2002-01-11 | Nagano Fujitsu Component Kk | 座標入力装置 |
JP3667331B2 (ja) * | 2002-10-29 | 2005-07-06 | 松下電器産業株式会社 | ヘテロ電界効果トランジスタ、およびその製造方法、ならびにそれを備えた送受信装置 |
-
2002
- 2002-09-30 CN CNB028194276A patent/CN100367526C/zh not_active Expired - Fee Related
- 2002-09-30 JP JP2003535270A patent/JP4417107B2/ja not_active Expired - Fee Related
- 2002-09-30 US US10/491,276 patent/US7372119B2/en not_active Expired - Fee Related
- 2002-09-30 WO PCT/JP2002/010164 patent/WO2003032410A1/ja active Application Filing
- 2002-09-30 KR KR1020047004772A patent/KR100604294B1/ko active IP Right Grant
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101369009B (zh) * | 2007-08-14 | 2013-03-27 | 新科实业有限公司 | 磁传感器及其制造方法 |
CN103278783A (zh) * | 2013-05-10 | 2013-09-04 | 中国科学院物理研究所 | 磁场传感器和霍尔器件 |
CN103278783B (zh) * | 2013-05-10 | 2015-11-25 | 中国科学院物理研究所 | 磁场传感器和霍尔器件 |
CN107078209A (zh) * | 2014-10-21 | 2017-08-18 | 旭化成微电子株式会社 | 霍尔元件 |
CN107078209B (zh) * | 2014-10-21 | 2019-03-26 | 旭化成微电子株式会社 | 霍尔元件 |
CN105652220A (zh) * | 2014-11-27 | 2016-06-08 | 精工半导体有限公司 | 霍尔传感器及其温度分布造成的偏移的补偿方法 |
CN104535087A (zh) * | 2014-12-26 | 2015-04-22 | 上海集成电路研发中心有限公司 | 霍尔元件及霍尔元件结构 |
CN104535087B (zh) * | 2014-12-26 | 2017-06-09 | 上海集成电路研发中心有限公司 | 霍尔元件及霍尔元件结构 |
CN108508383A (zh) * | 2018-03-28 | 2018-09-07 | 中国科学院西安光学精密机械研究所 | 具有阈值调整功能的霍尔片、霍尔传感器及阈值调整方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100604294B1 (ko) | 2006-07-31 |
JPWO2003032410A1 (ja) | 2005-01-27 |
CN100367526C (zh) | 2008-02-06 |
WO2003032410A1 (fr) | 2003-04-17 |
US20040251507A1 (en) | 2004-12-16 |
JP4417107B2 (ja) | 2010-02-17 |
KR20040064263A (ko) | 2004-07-16 |
US7372119B2 (en) | 2008-05-13 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: ASAHI KASEI EMD CORP. Free format text: FORMER OWNER: ASAHI KASEI MICROSYSTEMS CO., LTD.; ASAHI KASEI ELECTRONICS CO. LTD. Effective date: 20071109 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20071109 Address after: Tokyo, Japan, Japan Patentee after: Asahi Chemical Ind Address before: Tokyo, Japan, Japan Co-patentee before: Asahi Kasei Electronics Co., Ltd. Patentee before: Asahi Kasei Microsystems Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080206 Termination date: 20180930 |