CN1525888A - 旋涂介质 - Google Patents
旋涂介质 Download PDFInfo
- Publication number
- CN1525888A CN1525888A CNA028084527A CN02808452A CN1525888A CN 1525888 A CN1525888 A CN 1525888A CN A028084527 A CNA028084527 A CN A028084527A CN 02808452 A CN02808452 A CN 02808452A CN 1525888 A CN1525888 A CN 1525888A
- Authority
- CN
- China
- Prior art keywords
- equal
- less
- solvent
- substrate
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 238000000034 method Methods 0.000 claims abstract description 87
- 239000002904 solvent Substances 0.000 claims abstract description 71
- 238000000576 coating method Methods 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 54
- 238000004528 spin coating Methods 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 22
- 229920001169 thermoplastic Polymers 0.000 claims abstract description 20
- 238000009835 boiling Methods 0.000 claims abstract description 16
- 229920000642 polymer Polymers 0.000 claims description 37
- -1 acetate aryl ester Chemical class 0.000 claims description 21
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical group COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 18
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 9
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 239000004697 Polyetherimide Substances 0.000 claims description 7
- 238000007667 floating Methods 0.000 claims description 7
- 229920001601 polyetherimide Polymers 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical class CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 6
- 238000013519 translation Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920002492 poly(sulfone) Polymers 0.000 claims description 5
- 229920000058 polyacrylate Polymers 0.000 claims description 5
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000004695 Polyether sulfone Substances 0.000 claims description 4
- 229920002873 Polyethylenimine Polymers 0.000 claims description 4
- 150000008378 aryl ethers Chemical class 0.000 claims description 4
- 150000001896 cresols Chemical group 0.000 claims description 4
- 229920006393 polyether sulfone Polymers 0.000 claims description 4
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 claims description 2
- DTFKRVXLBCAIOZ-UHFFFAOYSA-N 2-methylanisole Chemical compound COC1=CC=CC=C1C DTFKRVXLBCAIOZ-UHFFFAOYSA-N 0.000 claims description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- MGJKQDOBUOMPEZ-UHFFFAOYSA-N N,N'-dimethylurea Chemical compound CNC(=O)NC MGJKQDOBUOMPEZ-UHFFFAOYSA-N 0.000 claims description 2
- 125000003047 N-acetyl group Chemical group 0.000 claims description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims description 2
- 150000001345 alkine derivatives Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 229930188620 butyrolactone Natural products 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 2
- 150000007942 carboxylates Chemical class 0.000 claims description 2
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 claims description 2
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims description 2
- MCWXGJITAZMZEV-UHFFFAOYSA-N dimethoate Chemical compound CNC(=O)CSP(=S)(OC)OC MCWXGJITAZMZEV-UHFFFAOYSA-N 0.000 claims description 2
- 150000002118 epoxides Chemical class 0.000 claims description 2
- 150000003948 formamides Chemical class 0.000 claims description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical group CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 claims description 2
- 239000012948 isocyanate Substances 0.000 claims description 2
- 150000002513 isocyanates Chemical class 0.000 claims description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims description 2
- 150000002825 nitriles Chemical class 0.000 claims description 2
- 150000002921 oxetanes Chemical class 0.000 claims description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 2
- 150000003462 sulfoxides Chemical class 0.000 claims description 2
- 150000003739 xylenols Chemical class 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims 3
- WPXPHXVMVLIUTL-UHFFFAOYSA-N diethyl carbonate;formamide Chemical compound NC=O.CCOC(=O)OCC WPXPHXVMVLIUTL-UHFFFAOYSA-N 0.000 claims 1
- 238000000790 scattering method Methods 0.000 claims 1
- 238000009987 spinning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 24
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 238000013500 data storage Methods 0.000 description 11
- 230000009477 glass transition Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000001914 filtration Methods 0.000 description 8
- 239000002243 precursor Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 6
- 229920004738 ULTEM® Polymers 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004634 thermosetting polymer Substances 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 229940018564 m-phenylenediamine Drugs 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229920000491 Polyphenylsulfone Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 229920001643 poly(ether ketone) Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- JEFSTMHERNSDBC-UHFFFAOYSA-N 1,2-dimethylcyclohexa-2,4-dien-1-ol Chemical compound CC1=CC=CCC1(C)O JEFSTMHERNSDBC-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- JBHRGAHUHVVXQI-UHFFFAOYSA-N 1-triethoxysilylpropan-1-amine Chemical compound CCO[Si](OCC)(OCC)C(N)CC JBHRGAHUHVVXQI-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- IVJJENKWBWGKEG-UHFFFAOYSA-N 4-cyclohexyl-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound O1C(=O)C(C=C2)=CC=C2C(=O)OC1C1CCCCC1 IVJJENKWBWGKEG-UHFFFAOYSA-N 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000070918 Cima Species 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229920004747 ULTEM® 1000 Polymers 0.000 description 1
- 229920006387 Vinylite Polymers 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 150000004816 dichlorobenzenes Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical compound C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/116—Deposition methods from solutions or suspensions by spin-coating, centrifugation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/246—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
- G11B7/247—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes methine or polymethine dyes
- G11B7/2472—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes methine or polymethine dyes cyanine
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/246—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
- G11B7/248—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes porphines; azaporphines, e.g. phthalocyanines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2532—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising metals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2542—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2548—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/256—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers improving adhesion between layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Magnetic Record Carriers (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
在一个实施方案中，旋涂方法包含：分配由溶剂与基于溶液总重量为约3～约30％的热塑性聚合物构成的溶液，其中该溶剂在常压下的沸点约为110℃～约250℃，极性指数大于或等于4.0，pH值约为5.5～约9；旋转基底；然后除去溶剂，获得包含涂层的涂布基底，该涂层在整个涂布基底表面内的起伏点少于或等于10个。
Description
背景技术
光学、磁性和磁光学介质是构成高性能存储技术的基石，它们不但存储容量高，而且每兆字节存储量的价格也适中。面密度的单位一般是千兆位/平方英寸盘片表面积(吉位/平方英寸(Gbit/in2))，面密度等于线密度(位信息/英寸磁道)乘以磁道密度/英寸。提高面密度是降低每兆字节价格的关键因素，因此工业界一直都希望进一步提高面密度。
参照图1，表示的是低面密度系统1(即，面密度小于5Gbit/in2)，该系统包括读取装置3以及可记录或可重写存储介质5。该存储介质5包含常规层，该层包括数据层7、介电层9和9′、反射层11和保护层13。系统1在操作时，由读取装置3产生激光15，激光入射到光学透明基底17上。激光穿过基底17，然后穿过介电层9、数据层7和第二介电层9′。激光15接着通过反射而离开反射层11，向回穿过介电层9′、数据层7、介电层9和基底17，最后被读取装置3读到。
高面密度存储介质与CD不同，其面密度比DVD还要高，一般都大于5Gbit/in2，这类存储介质大多采用的是第一表面或近场读/写技术，旨在提高面密度。对于这类存储介质而言，虽然并不太看重基底的光学质量，但是基底的物理和机械性能却变得越来越受重视。对于高面密度应用而言，包括第一表面应用，存储介质的表面质量会影响读取装置的精度、数据存储能力以及基底的复制质量。
存储介质一般包含多个层，这些层一般由处于基底比如玻璃或铝上的多层溅射淀积层或膜构成。可能的层包括反射层、介电层、数据存储层和保护层。由于读/写装置与存储介质之间的公差很小，层的质量比如表面光洁度、缺陷率等将是控制介质制造技术、甚至是限制介质制造技术的重要因素。
发明概述
本发明涉及旋涂方法和由此成型的制品。在一个实施方案中，该旋涂方法包含：分配由溶剂与基于溶液总重量约3～约30％的热塑性聚合物构成的溶液，其中溶剂在常压下的沸点约为110℃～约250℃，极性指数大于或等于4.0，pH值约为5.5～约9；旋转基底；然后除去溶剂，获得包含涂层的涂布基底，该涂层在整个涂布基底表面内的起伏点少于或等于10个。
在另一个实施方案中，旋涂方法包含：向基底上分配溶液，该溶液包含聚合物、沸点约为125℃～约180℃的第一溶剂和沸点约为190℃或更高的第二溶剂；然后旋转基底，从而将溶液涂布在基底上。
在还一个实施方案中，旋涂方法包含：旋转基底，在按弧线平移方式于基底上方移动分配器的同时将溶液分配在基底上，然后旋转基底，从而将溶液涂布在基底上。
以如下附图和详细说明为例来说明前述的特点和其它特点。
附图简述
现在参照附图，其中同一元件的标号相同：
图1是现有技术低面密度系统的横截面示意图，它采用了光学透明基底；
图2是热退火时间(烘烤时间)对粗糙度作的曲线图；
图3是旋涂基底的顶视图，其中涂层形成了“丘状凸起(spoke)”；
图4是沿图2中4-4剖线获得的横截面视图，表示的是丘状凸起；
图5是旋涂基底的顶视图，其中涂层形成了“星爆状纹路(starburst)”；
图6是基底的顶视图，表示的是分配臂将待旋涂材料分配到基底上时所做的一种动作；
图7是基底的顶视图，表示的是分配臂将待旋涂材料分配到基底上时所做的另一种动作；
图8是旋转卡盘的横截面侧视图，设计该卡盘的目的是减弱背面污染程度和减少起伏点数。
发明详述
对于某些存储介质的实施方案而言，希望在成品盘片和/或下层基底上旋涂一层聚合物，目的是起到保护、找平作用和/或使在成品介质中制造出物理形貌(比如凹坑、沟槽等)成为可能。在这些应用当中，由于涂布方法不完善，因此很难达到表面质量、波纹和起伏点要求。
许多数据存储介质对表面质量要求很严格，很难满足，特别是旋涂塑料下层。未经过图案化的数据区域的典型要求包括：低粗糙度(比如，粗糙度(Ra)小于或等于约20，优选小于或等于约10，更优选小于或等于约5)、微波纹(或宏波纹)(以约4mm2面积内的峰谷差表示之，比如要求其小于或等于约35nm，优选小于或等于约25nm，并且更优选小于或等于约15nm)和起伏点(在整个盘片表面(比如，其表面积至少约为6,500mm2)内少于或等于约5个，优选少于或等于约3个，并且更优选小于或等于约1个，其中起伏点的高度小于或等于约50nm，该高度优选小于或等于约25nm，并且更优选小于或等于约15nm)。起伏点指的是于介质表面上凸起的任何有害表面特征。对于磁性介质而言，质量要求甚至更为严格。比如，表面粗糙度Ra优选小于或等于约5，而微波纹优选小于或等于约15nm(以约4mm2面积内的峰谷差表示之)。对含有塑料层的介质的其它要求包括：该层与基底的粘结强度。粘结强度或剥离强度可通过现有技术已知的各种方法进行测定。一种方法涉及首先在聚合物膜上淀积1,000钛。然后在钛上再淀积1,000铜。最后在这些溅射膜上电镀25μm铜。通过蚀穿或划穿金属层，成型出一条1/8in宽、大于或等于约1in长的金属线。将成型金属线的一端从基底上揭起，长约0.25in。然后将样品放入力测试系统(比如可从Ametek Inc.获得)中，以15mm/min的速度测试从基底上剥下该成型金属线时所需的力。将所获得的值乘以8，就是剥离强度(1b/in)。根据该方法所测得的结果，剥离强度至少约为11b/in才能满足要求，优选至少约为21b/in。
通过使用防污染的卡盘、正确选择待旋涂聚合物、待旋涂塑料用的溶液、在高于或等于该塑料玻璃化转变温度(Tg)的温度下对热塑性聚合物进行退火处理、或者在等于或高于材料固有软化点的温度(但是比引发交联所需的温度要低)下对热固性聚合物进行退火处理、和/或采用具有适宜特性的热塑性聚合物来减少甚至消除有害的表面缺陷(比如，起伏点、微波纹、厚度不均匀性(比如边缘颗粒、“丘状凸起”、“星爆状纹路结构”等)和粗糙度(比如，大于约20)，由此将聚合物分配在基底表面上，就能达到这些要求。
基底中心有孔(比如，包含对称结构的数据存储介质等等)，在旋涂该基底的过程中，臂可以平移至旋转基底的内周，然后在此分配溶液(比如，包含聚合物和溶剂)。这样就会产生溶液环，溶液环在形成后就会受离心力的作用以足够快的速度使涂布溶液沿基底扩散。但是，环分配法有可能使膜厚度在整个基底表面内的不均匀性产生明显偏差。这些不均匀性可以表现为多种形式，两个最为常见的形式是“丘状凸起”(见图3和4)和“星爆状纹路”图案(图5)，丘状凸起的形式是非常薄的、由内周向外周延伸的圆丘状结构，而星爆状纹路则表现为膜厚度沿圆周方向产生偏差。在这些图中，膜厚度由内周向外周延伸呈楔形，这是旋涂膜在基底上的典型形式，以轮廓线表示中心孔(内周膜较薄，外周膜较厚)，以附加轮廓线或变形轮廓线表示丘状凸起和星爆状纹路偏差。
通过采用这种涂布溶液，其粘度能够在分配溶液头与分配溶液尾之间达到更好的融合效果(比如，分配溶液环首尾相接成环)，采用旋涂法时就能获得基本上均匀的厚度(比如，厚度偏差小于或等于10％，优选厚度偏差小于或等于约5％)了。可以采用粘度小于或等于约为2,000cps的涂布溶液，优选小于或等于约750cps，并且甚至更优选小于或等于约500cps。粘度越低，材料就越容易均匀扩散，旋落之前所形成的融合线就越不明显。
除了采用低粘度涂布溶液以外，还可以采用动态分配法来获得所需的厚度均匀性，该方法在基底内周附近所产生的溶液环更为均匀，该方法也可以单独采用。可利用分配样式来获得基本上均匀的厚度，该样式包含在旋涂盘片的同时由待涂布区域外周向内周平移分配臂，同时分配溶液(见图6)。待达到待涂布区域内周后，优选将分配臂在该区域上方至少保持一满转，然后使分配臂再平移返回基底外周，然后结束溶液分配过程。该方法沿盘片表面形成溶液螺旋并且在内周形成均匀的溶液环。因为待涂布区域内周未发生涂布溶液突然开始和突然停止现象，所以可以避免由此而在内周环中产生缺陷，从而获得厚度均匀效果(比如，厚度偏差降低至约5％以下)。
或者，分配臂可以沿盘片按弧线方式平移(见图7)。如果在盘片按某一标准速度(比如约120rpm)旋转的同时进行该操作的话，那么就能在所需的涂布内周处通过分配而获得均匀的溶液环。与另一种分配方法一样，该方法可通过分配而获得基本上均匀的内周溶液环，并且在基底上生成厚度均匀的涂层。
除了厚度基本均匀以外，还希望降低起伏点的数目。因为起伏点一般是由于涂布溶液中存在颗粒状污染物(比如，来自于聚合物和/或溶剂)、和/或未溶解的聚合物凝胶以及旋涂过程中旋落材料再次沉积而造成的，优选在分配之前对涂布溶液进行过滤。通过采用单膜片或多层形式的滤器(比如聚四氟乙烯(PTFE)、超高密度聚乙烯(UPE)等)，可显著降低旋涂基底上起伏点的数目。因为同标准孔径较大的滤器系统相比，使用孔径较小的滤器可降低起伏点的数目和尺寸，所以优选标准孔径小于或等于约100nm的滤器，更优选标准孔径小于或等于约50nm的滤器，并且特别优选标准孔径小于或等于约25nm的滤器。过滤可在涂布溶液分配之前进行，和/或在分配过程中进行点过滤。
除了过滤以外，采用带有一个或多个突出结构的旋转卡盘可有助于降低起伏点的数目和尺寸。参照图8可知，突出结构21可防止旋落材料再次回到盘片13的正面，或者沾在背面15上。在对基底进行双面涂布的应用中，防止背面污染也是一个需要解决的问题。
如前所述，背面污染也是成型数据存储介质时所遇到的一个问题。污染还可能是与卡盘自身接触而造成的。比如，从卡盘上取下基底(两面均包含涂层)时，与卡盘接触可产生超过约25nm、约50nm并且甚至超过约100nm的起伏点。再参照图8，通过采用图示设计，可避免材料再次沉积到基底的正面和背面上，并且可防止卡盘与基底的涂布区域发生接触。卡盘包含中心部分23(一般称为盘芯)，它的作用是配合基底1上的孔。放在卡盘上时，基底1与凸缘19配合，该凸缘的外径优选比基底1第二面15上的涂层内径小。
突出结构21处于基底1外周或其附近，其高度优选小于凸缘19的高度，从而基底1在静止时不与突出结构21发生物理接触。因此，突出结构21的高度就比凸缘的高度小，突出结构的高度优选大到足以能防止污染物(和/或第一面上的涂布溶液颗粒)因被吸入基底1之下而进入第二面15。虽然突出结构21的高度优选比凸缘的高度小，但其高度至少约为凸缘高度的85％，更优选其高度至少约为凸缘高度的90％，甚至更优选其高度至少约为凸缘高度的95％，并且特别优选其高度至少约为凸缘19高度的98％。突出结构的长度可变，从足以在卡盘操作条件下提供结构完整性的长度，到等于甚或超过凸缘19至基底1外周的距离的长度不等。
卡盘的全外径优选基本上等于或者大于基底1第二面15上涂层的外径。因此，为了避免背面污染，突出结构21的外径至少基本上等于或者大于背面涂层的外径。卡盘任选带有延伸部分17，其外径大于基底1的外径。该延伸部分17可避免材料(比如污染物)在从第一面13旋落之后由于空气流的作用而再次回到第一面13中去并污染之。
与起伏点一样，其它表面质量的要求也很严格，比如微波纹、粗糙度、平坦度等等，这样才能实现可靠的头磁道寻轨并获得足够的信噪比，从而使该介质能够获得实际应用(比如，盘片的读取和写)。为了解决基底中旋涂膜的这些质量问题，一种办法是包含涂布溶液中所用的那类溶剂。在一个实施方案中，溶剂共混物或混合物优选表现出所需的粘度。如果溶剂的沸点太低(Tb小于约100℃)，进而挥发性太大，那么在旋落时就会使膜发生局部干燥和结皮现象。局部干燥和结皮现象可在膜中产生应力梯度，这会造成过多的条纹和微波纹。如果溶剂沸点太高(Tb大于约180℃)，那么溶剂在旋涂过程中就无法充分挥发，旋转之后膜的粘度就会过低。这种膜在旋转后会因为应力和表面张力的作用(边缘效应、基底取向)而再次发生流动，从而产生膜厚不均匀的区域。通过采用溶剂共混物，它包含沸点(Tb)为约100℃～约180℃(优选约145℃～约165℃)的低沸点溶剂和高沸点(比如，Tb约190℃或更高)溶剂，所获得的旋涂膜的表面质量为：Ra小于或等于约10，甚至小于或等于约8，而波纹(以约4mm2面积内的峰谷差表示)小于或等于约25nm，甚至小于或等于约15nm。
与仅采用低Tb溶剂或仅采用高Tb溶剂相反，通过在涂布溶液旋涂过程中采用溶剂共混物，低沸点溶剂以中等速度蒸发，使膜干燥而提高粘度，令膜“变定”，使得膜在旋涂过程结束之后不易再次产生流动。因为沸点较高的溶剂其挥发性不大，膜不会因为过分干燥而产生局部应力区域，该局部应力会导致膜厚不均。溶剂优选包含约5～约50重量％的低Tb溶剂，优选约25重量％～约45重量％的低Tb溶剂，并且更优选约25重量％～约35重量％的低Tb溶剂，基于溶剂的总重量，余量为高Tb溶剂。可能的低Tb溶剂包括茴香醚(Tb约为155℃)、二氯苯(Tb约为180℃)、二甲苯(Tb约为140℃)等，以及包含至少一种前述溶剂的组合。可能的高Tb溶剂包括甲酚(Tb约为200℃)、γ-丁内酯(Tb约为206℃)、苯乙酮(Tb约为203℃)、N-甲基-吡咯烷酮(Tb约为202℃)等，以及包含至少一种前述溶剂的组合。
无论溶剂是单一溶剂还是混合溶剂，这些溶剂均优选包含特定的特性，这些特性将有助于形成均匀的旋涂层，该涂层的起伏点小于或等于5，Ra小于或等于20，起伏点甚至小于或等于3，而Ra甚至小于或等于5(比如对于磁性介质应用而言)。溶剂(或溶剂混合物)的特性优选包括：a)常压下的沸点约100℃～约300℃，优选约110℃～约250℃；b)不含卤素(即，卤素含量低于1％)；c)含水量小于或等于约5重量％，优选小于或等于1重量％，并且更优选小于或等于约0.5％，基于溶剂的总重量；d)pH值为约5.5～约9，优选约6～8，并且更优选约6.5～约7.5；e)极性指数为约3～约10(极性指数可参见L.R.Snyder，J.Chromatographic Science(第16卷)223-234，(1978))，这些值优选是在pH值约6～约8下测得的；f)介电常数(K)大于或等于约4，优选大于或等于约10，这些值也优选是在pH值约6～约8下测得的；g)闪点大于或等于约20℃，大于或等于约50℃，优选大于或等于约100℃；h)凝固点小于或等于0℃，优选小于或等于约-20℃；优选包含前述至少一项特性的组合。
某些可能的溶剂包括，乙酸芳基酯和乙酸C4-C10烷基酯、碳酸C2-C6烷基酯、甲酰胺、N-C1-C6烷基甲酰胺、C1-C6烷基亚砜、乙酸烷氧基烷基酯、N-C1-C6烷基吡咯烷酮、酚、C1-C6烷基酚、芳基醚、C1-C6烷基芳基醚、C1-C6烷基脲、C4-C6环丁砜、N-乙酰基环醚、C1-C6烷基乙酰胺、C1-C6烷基磷酰胺、C3-C6内酯、芳基烷基酮以及包含至少一种前述溶剂的可溶性组合。溶剂的实例包括，乙酸丁酯、碳酸二乙酯、甲酰胺、甲基甲酰胺、二甲基甲酰胺、二甲基亚砜、乙酸甲氧基乙酯、N-甲基吡咯烷酮、碳酸亚丙酯、茴香醚、四甲基脲、二甲基脲、环丁砜、甲基茴香醚、N-乙酰基吗啉酮、二甲基乙酰胺、一甲基乙酰胺、veratole、六甲基磷酰胺、丁内酯、苯乙酮、苯酚、甲酚、2，4，6-三甲苯酚、二甲苯酚以及包含至少一种前述溶剂的可溶性组合。据信本发明方法可使用的溶剂包括，水、乙酸、甲酸、甲醇、乙醇、乙醇胺、氨水、甲胺、二甲胺、乙胺、苯胺、苯二胺、乙醚、己烷、戊烷、环己烷、环戊烷和石油醚。
通过在涂布之后对膜进行热退火处理，也可以改善旋涂膜的粗糙度和微波纹。对于热塑性膜而言，在高于热塑性聚合物玻璃化转变温度(Tg)的温度下进行退火，可以使材料能够流动和自流平，由此对改善粗糙度有利。优选在比Tg高约25℃或更高、更优选比Tg高约50℃或更高、最优选比Tg高约100℃或更高的温度下和在足够长的时间内对膜进行退火处理，目的是使膜软化而不使其发生明显的交联或其它化学变化。通过继续延长退火时间，可进一步改善退火所带来的光滑或找平效果，退火时间优选约2h或更长，更优选大于或等于约10h，并且甚至更优选大于或等于约20h。
图2表示的是代表性热塑性聚合物其退火时间与粗糙度的关系，在比其固有软化温度高的温度下对热固性聚合物和其它可交联聚合物进行退火时(比如，聚酰亚胺前体聚酰胺酸的软化温度为约100℃～约150℃)，该理论也适用。只要进行退火处理时温度不至太高和/或时间不至太长，以致产生了交联或其它化学变化，那么就可以达到改善粗糙度的目的。
为了改善涂层与基底的粘结性，任选采用粘结力促进剂，比如有机硅烷或其它粘结力促进剂。在采用的粘结力促进剂时，一般都将它们溶解在溶剂中，比如甲醇、水以及包含至少一种前述溶剂的组合，等等，在施用聚合物之前将其施用在盘片上。待粘结力促进剂涂布在基底上之后，就可按照之前所述施用涂布溶液了。某些可能的粘结力促进剂包括，带有烷基氨基、烷基酰胺、烷基环氧和烷基巯基官能团的烷氧基硅烷。
比如，将聚醚酰亚胺树脂(比如Ultem树脂级1000，由GeneralElectric Company市售)溶解在茴香醚/γ-丁内酯溶剂系统中(溶剂的重量比约为50∶50，还有15重量％Ultem树脂)。将任选经过抛光的基底(金属(比如铝等)、玻璃、陶瓷、聚合物、金属基质复合材料和合金以及包含至少一种前述材料的组合，等等)放在卡盘上，用机械装置或真空固定之。然后将粘结力促进剂分配在旋转或静止的基底上而施用之，该粘结力促进剂比如是5ml水/甲醇溶液，该溶液含有0.05％VM651(α-氨丙基三乙氧基硅烷粘结力促进剂，由DuPon市售)。然后优选使基底旋转约30s，以分配粘结力促进剂，其速度比如最高约为2,000rpm。如果采用了粘结力促进剂，那么任选在施用聚合物之前，将基底比如用甲醇进行清洗，以除去过量的粘结力促进剂，然后干燥之(比如空气干燥、真空干燥、加热干燥等等)。
涂布溶液可以按图3-5所示施用在基底上。施用完粘结力促进剂之后，将涂布溶液施用到基底上。然后旋转基底，使涂布溶液沿基底基本上均匀分布，以致成膜。膜的厚度取决于各种参数，比如涂布溶液质量、所需的厚度、涂布溶液粘度、旋转速度、旋转时间长短、涂布溶液固含量和环境条件(包括温度、湿度、气氛类型以及气压)等等。虽然厚度可达到约0.1μm以下，但优选膜的厚度足够大，从而可在膜上创造出任何所需的表面特征(比如凹坑、沟槽、纹路等)。一般而言，厚度最高可达约50μm，优选小于或等于约10μm，并且对于存储介质型应用而言，特别优选小于或等于约5μm。最终厚度范围是多少，将部分取决于需要在膜上创造的任何特征的深度，以及基底上任何需要膜来掩盖的表面缺陷的大小。
对于旋转时间长短和速度而言，其值必须足够大，从而能够将涂布溶液沿基底分配到所需的区域中去，选择这些参数时基于几个因素，包括比如涂布溶液粘度、固含量和所需的涂层厚度；所有相互依存的参数。但是，旋转速度一般为大于或等于约2,000rpm，旋转时间为高达约25s或更长，优选在大于或等于约4,000rpm的旋转速度下旋转最长约15s。比如，在采用含有15重量％Ultem树脂级1000在茴香醚/γ-丁内酯溶剂中的涂布溶液施涂3μm厚涂层时，其旋转速度为2,000rpm，旋转时间为25s。
沿基底分配完涂层之后对涂层进行干燥，优选在惰性气氛如氮气下进行干燥，干燥时间要足够长，以除去溶剂并使聚合物前体发生聚合(根据某些特定实施方案的要求)，干燥速率以获得所需表面质量为准。将涂布基底升高至所需温度时，可通过控制升温速率而使除溶剂操作不对表面特征产生任何有害影响。比如，加热涂布基底时，加热温度高于或等于约200℃，一般优选高于或等于约250℃，速率小于或等于约10℃/min，速率优选小于或等于约5℃/min，速率特别优选小于或等于约3℃/min。在基底达到所需温度之后，使其在该温度下保持足够长的时间，以除去溶剂和根据需要使聚合物前体发生聚合，然后冷却之。所用的时间一般高达几个小时，优选小于或等于约2h，并且特别优选几分钟或其几分之一。按此方式制造的基底可用作数据存储应用，比如硬磁盘等，随后任选对该基底进行加工处理。
从理论上讲，基底和/或基底上的聚合物涂层可包含任何具有适当性能的聚合物，比如该聚合物必须能承受后续加工参数(比如后续涂层的施用)，比如溅射(即，对于磁性介质而言，温度从室温至超过约200℃(一般等于或者超过约300℃)，而对于磁光学介质而言，温度从约室温(约25℃)至约150℃)。就是说，希望聚合物有足够的热稳定性，目的是为了防止它在淀积过程中产生形变。对于磁性介质而言，适当的聚合物包括玻璃化转变温度优选大于或等于约180℃，更优选玻璃化转变温度大于或等于约200℃的热塑性聚合物(比如，聚醚酰亚胺、聚醚醚酮、聚砜、聚醚砜、聚醚酮、聚酯碳酸酯、聚丙烯酸酯、聚苯砜、聚苯醚、聚酰亚胺、耐热性聚碳酸酯等等，及其前体、反应产物，以及包含至少一种前述材料的组合)；甚至更优选玻璃化转变温度大于或等于约250℃的材料(比如以砜联二苯胺或氧联二苯胺代替间苯二胺而制得的聚醚酰亚胺、聚酰亚胺等，及其前体、反应产物，以及包含至少一种前述材料的组合)。
因为许多应用都需要玻璃化转变温度不同的聚合物，所以最好能够调整聚合物(均聚物、共聚物或共混物)的玻璃化转变温度，从而获得玻璃化转变温度符合需要的膜。因此，制备涂布溶液时可以采用聚合物共混物，比如美国专利5,534,602(Lupinski和Cole，1996)所述的那些。在该实例中，聚合物共混物提供了根据需要可变的玻璃化转变温度，从约190℃～约320℃。
某些可能的热塑性聚合物的实例包括但不限于，非晶态材料、结晶材料、半结晶材料及其前体、反应产物，以及包含至少一种前述材料的组合。比如，聚合物可包含：聚氯乙烯、聚烯烃(包括但不限于，线性和环状聚烯烃，包括聚乙烯、氯化聚乙烯、聚丙烯等)、聚酯(包括但不限于，聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚对苯二甲酸环己基亚甲基酯、等等)、聚酰胺、聚砜(包括但不限于，氢化聚砜等等)、聚酰亚胺、聚醚酰亚胺、聚醚砜、聚苯硫、聚醚酮、聚醚醚酮、ABS树脂、聚苯乙烯(包括但不限于，氢化聚苯乙烯、间同立构和无规立构聚苯乙烯、聚环己基乙烯、苯乙烯-共聚-丙烯腈、苯乙烯-共聚-马来酸酐等等)、聚丁二烯、聚丙烯酸酯(包括但不限于聚甲基丙烯酸甲酯、甲基丙烯酸甲酯-聚酰亚胺共聚物等等)、聚丙烯腈、聚缩醛、聚碳酸酯、聚苯醚(包括但不限于，从2，6-二甲基苯酚衍生的聚苯醚以及聚苯醚与2，3，6-三甲基苯酚的共聚物，等等)、乙烯-乙酸乙烯酯共聚物、聚乙酸乙烯酯、液晶聚合物、乙烯-聚四氟乙烯共聚物、芳香族聚酯、聚氟乙烯、聚偏二氟乙烯、聚偏二氯乙烯、特氟隆等等。对于磁性介质，优选的热塑性聚合物包括聚酰亚胺、聚醚酰亚胺、耐热性(比如大于或等于约175℃)聚碳酸酯、聚酯碳酸酯、聚丙烯酸酯、聚苯醚、聚砜、聚醚砜、聚苯砜、和包含至少一种前述热塑性聚合物的组合。
另外，在本发明弧线方式分配的实施方案中可采用热固性聚合物，热固性聚合物可以与热塑性聚合物组合使用，或者代替之，只要热固性聚合物在模压条件下具备足够的流动性从而能够形成所需的表面特征即可，热固性树脂比如是环氧树脂、酚醛树脂、醇酸树脂、聚酯、聚酰亚胺、聚氨酯、无机填料填充硅氧烷、双马来酰亚胺、氰酸酯、乙烯基树脂和苯并环丁烯树脂。另外，聚合物可包含共混物、前体、共聚物、混合物、反应产物，以及包含至少一种前述热塑性和/或热固性聚合物的组合。
在一个实施方案中，所用的热塑性聚合物包含性能的特定组合。其中一种性能是其反应活性。在该实施方案中，热塑性聚合物不具有反应活性。换句话说，热塑性聚合物包含少于或等于约20meq/kg的活性端基。热塑性聚合物优选包含少于或等于约10meq/kg的活性端基。比如，活性端基可包括羧酸、羧酸盐、羧酸酐、胺、苯酚、醇、腈、环氧化物、氧杂环丁烷、烯、炔、环丁基(比如、环丁烷、环丁烯等等)、异氰酸酯、氰脲酸酯、噁唑以及包含至少一种前述活性端基的组合。热塑性聚合物也优选具有的重均分子量(Mw)为约10,000～约500,000Dalton，更优选约20,000～约70,000Dalton，分子量是以二氯甲烷为溶剂通过凝胶渗透色谱法测定的。
为了进一步证实热塑性聚合物不具有反应活性，热塑性聚合物在整个涂布过程中的分子量变化不超过约25％(比如，从向溶剂中引入之前直至贯穿整个压制过程)，优选分子量变化不超过约10％。
能否可靠地制造出起伏点和Ra水平符合需要的旋涂基底，起决定作用的其它特性与溶液有关。溶液的pH值优选约5.5～约8，更优选pH值约6～约7.5。溶液的粘度为约1～约30,000cps，优选约1～约2,000cps，粘度是按照ASTM D1824测定的。在温度45℃下放置3h后测定时，溶液的粘度变化优选小于或等于约25％，更优选小于或等于约10％。
为了能够可靠地制造涂层，也需选择溶液的组成。优选溶液包含约3～约30重量％固含量，基于溶液的总重量，优选约5～15重量％固含量。溶液中有害污染物(颗粒、凝胶等)的颗粒直径(沿长轴测定)优选小于或等于约0.05μm，优选直径大于0.05μm的颗粒小于或等于总重量的约0.1重量％，比如可通过激光扫描法测定之。溶液也优选包含小于或等于约5重量％的含水量，更优选小于或等于约2重量％，并且更优选小于或等于约0.5重量％，基于溶液的总重量。溶液进一步优选包含浊度(比如，雾度百分比)，它是按照ASTM D1003测定的，该浊度小于或等于约5％，优选小于或等于约1％。
在将聚合物涂层施用到基底至少一面的至少一部分上之后，可对涂层进行压花处理。撇开理论不管，由于聚合物具有流变特性，所以不仅可以在基底中压出凹坑、沟槽、小图案、伺服图案和边缘特征，而且也可以压出所需的表面质量(比如所需的光滑度、粗糙度、微波纹、纹路(比如磁粒取向度的微纹路)和平坦度)。压花表面特征的深度最大约200nm。一般可以采用深度大于或等于约5nm的表面特征，优选大于或等于约10nm，更优选大于或等于约20nm，优选约50nm。就横向尺寸而言，表面特征，特别是磁性数据存储介质的表面特征，优选其“短”尺寸等于或大于约250nm，更优选小于或等于约200nm，甚至更优选小于或等于约150nm，特别优选小于或等于约100nm。
在压花或按其它方式在涂层中创造出所需表面特征之后，可利用一种或多种技术在基底上施涂各种附加层，比如溅射法、化学汽相淀积法、等离子体增强化学汽相淀积法、活性溅射法、蒸发法、喷雾法、涂刷法等，以及包含至少一种前述技术的组合。一般而言，施用在基底上的层可包括一个或多个数据存储层(比如磁性层、磁光学层、光学层等)、保护层、介电层、绝缘层、包含至少一种前述层的组合，等等。
数据存储层可包含任何能够存储可检索数据的材料，比如光学层、磁性层、或磁光学层，其厚度最大为约600，优选厚度最大约300。可能的数据存储层包括但不限于，氧化物(比如氧化硅氧烷)、稀土元素-过渡金属合金、镍、钴、铬、钽、铂、铽、钆、铁、硼等，以及合金和包含至少一种前述材料的组合，有机染料(比如花青或酞菁型染料)、以及无机相变化合物(比如TeSeSn或InAgSb)。优选数据层的矫顽力至少为约1,500奥，特别优选矫顽力至少为约3,000奥。
保护层可起到防护灰尘、油污和其它污染物的作用，其厚度大于或等于100μm～小于或等于约10，在某些实施方案中优选其厚度小于或等于约300。在另一个实施方案中，特别优选其厚度小于或等于约100。保护层的厚度一般至少部分取决于所用的读取/写机构的类型，比如是磁性、光学还是磁光学介质。可能的保护层包括，耐蚀材料比如氮化物(比如氮化硅和氮化铝，等等)、碳化物(比如碳化硅等)、氧化物(比如二氧化硅等等)、聚合物(比如聚丙烯酸酯、聚碳酸酯和前述的其它聚合物)、碳膜(金刚石、类金刚石碳等等)等等，以及包含至少一种前述材料的组合。
介电层在某些存储方案中一般用作热控制体，其厚度一般最高为约1,000或者更高，并且最低约为200。可能的介电层包括氮化物(比如氮化硅和氮化铝，等等)；氧化物(比如氧化铝)、碳化物(比如碳化硅)；以及包含至少一种前述材料的组合，还有与环境相容并优选与邻层不发生反应的其它材料。
如果需要反射层的话，其厚度必须足够大，以便反射足够多的能量，从而使数据检索成为可能。反射层的厚度一般最高约为700，其厚度一般优选约300～约600。可能的反射层包括任何能够反射特定能场的材料，包括金属(比如铝、银、金、钛和合金以及包含至少一种前述材料的混合物，等等)。除了数据存储层、介电层、保护层和反射层之外，还可以采用其它层，比如润滑层等等。有用的润滑剂包括氟化合物，特别是氟油和滑脂，等等。
实施例
实施例1：将聚合物涂层旋涂在玻璃基底上，该涂层的Ra为约4；高度大于25nm的起伏点的数目小于10个；4mm2面积内的微波纹约为25nm；厚度不均匀性为标准厚度的±10％。涂布溶液由18重量％Ultem1000(基于溶液的总重量)和50∶50的茴香醚(极性指数为3.8)：苯乙酮(极性指数为4.8)构成，按标准粒度0.05μm过滤该溶液。溶液经过过滤后，其粘度约1,200cps，将其按螺旋方式动态分配在基底上，同时以150rpm的速度旋转安放在图8所示卡盘上的基底。然后以速度3,500rpm旋转涂层35s。然后将涂布基底在300℃下退火2h(比Ultem的玻璃化转变温度(Tg为217℃)高约85℃)。
实施例2：将聚合物涂层旋涂在玻璃基底上，该涂层的Ra为约4；4mm2面积内的微波纹约为25nm；厚度不均匀性为标准厚度的±10％。涂布溶液由16重量％氧联二酸酐/间苯二胺聚酰胺酸(基于溶液的总重量)和40∶60的茴香醚：NMP(N-甲基吡咯烷酮；极性指数为6.7)构成，按标准粒度0.2μm过滤该溶液。溶液经过过滤后，其粘度为360cps，将其按螺旋方式动态分配在基底上，同时以150rpm的速度旋转安放在图8所示卡盘上的基底。然后以速度3,500rpm旋转涂层35s的同时以弧线方式将过滤后的溶液分配在基底上。然后将涂布基底在350℃下退火1h(比聚醚酰亚胺的玻璃化转变温度(Tg约300℃)高约50℃)。
实施例3：将聚合物涂层旋涂在玻璃基底上，该涂层的Ra为约5；4mm2面积内的微波纹约为25nm；厚度不均匀性为标准厚度的±10％。涂布溶液由18重量％Ultem 1000(基于溶液的总重量)和50∶50的茴香醚：γ-丁内酯构成，按标准粒度0.2μm过滤溶液。溶液经过过滤后，其粘度为1,200cps，将其按弧线方式动态分配在基底上，同时以150rpm的速度旋转安放在图8所示卡盘上的基底。然后以速度3,500rpm旋转涂层35s。然后将涂布基底在300℃下退火2h(比Ultem的Tg高约85℃)。
通过采用经过设计的卡盘、溶剂共混物、分配技术、热退火和/或过滤操作，就很容易制造出能满足严格的表面质量要求的聚合物涂布基底。
虽然以上参照例示性实施方案对本发明进行了说明，但是本领域熟练人员都知道，可对本发明进行修改以及用各种等效方案替代本发明中的各种元素，这些都是属于本发明范围之内的。除此之外，可根据本发明公开内容对特定条件或材料进行适应性改变，这些也都是属于本发明基本范围之内的。因此，本发明并不限于所公开的特定实施方案，它们都是本发明的最佳实施方式，但是本发明包括属于附录权利要求范围之内的所有实施方案。
Claims (44)
1.旋涂方法，包含
向基底上分配由溶剂与基于溶液总重量为约3～约30％的聚合物构成的溶液，其中溶剂在常压下的沸点为约110℃～约250℃；
旋转基底；然后
除去溶剂，获得包含涂层的涂布基底，该涂层在整个涂布基底表面内的起伏点少于或等于10个。
2.权利要求1的方法，其中溶剂进一步包含沸点为约125℃～约180℃的第一溶剂和沸点等于或大于约190℃的第二溶剂；然后
旋转基底，将溶液涂布在基底上。
3.权利要求2的方法，其中第一溶剂的沸点为约125℃～约155℃。
4.权利要求2和3任意一项的方法，其中溶液包含约5重量％～约50重量％的第一溶剂，基于溶剂的总重量。
5.权利要求4的方法，其中涂布溶液包含约25重量％～约45重量％的第一溶剂。
6.权利要求2-5任意一项的方法，其中第一溶剂选自茴香醚、二甲苯以及包含至少一种前述第一溶剂的组合。
7.权利要求2-6任意一项的方法，其中第二溶剂选自甲酚、γ-丁内酯、苯乙酮、N-甲基-吡咯烷酮以及包含至少一种前述第二溶剂的组合。
8.权利要求1-7任意一项的方法，其中溶剂的极性指数大于或等于约4.0，而pH值为约5.5～约9。
9.权利要求1-8任意一项的方法，进一步包含在按螺旋平移方式于基底上移动分配器的同时分配溶液。
10.权利要求1-8任意一项的方法，进一步包含在按弧线平移方式于基底上移动分配器的同时分配溶液。
11.权利要求1-10任意一项的方法，进一步包含在分配过程中以较低的速度旋转基底，然后在基底旋涂过程中以较快的速度旋转基底。
12.旋涂方法，包含
在按弧线平移方式于基底上移动分配器的同时，向第一速度的基底上分配溶液；然后
以第二速度旋转基底，将溶液涂布在基底上，
其中第一速度比第二速度慢。
13.权利要求1-12任意一项的方法，其中聚合物包含热塑性聚合物，其重均分子量为约10,000～约500,000Dalton。
14.权利要求13的方法，其中重均分子量为约20,000～约70,000Dalton。
15.权利要求13和14任意一项的方法，其中热塑性聚合物的Tg为约180℃～约300℃。
16.权利要求15的方法，其中Tg是约200～约260℃。
17.权利要求1-16任意一项的方法，其中聚合物带有少于或等于约20meq/kg的官能团，这些官能团选自羧酸、羧酸盐、羧酸酐、胺、酚、醇、腈、环氧化物、氧杂环丁烷、异氰酸酯、氰脲酸酯、噁唑、环丁基、烯、炔和包含至少一种前述基团的组合。
18.权利要求17的方法，其中官能团包含羧酸。
19.权利要求1-18任意一项的方法，其中聚合物在整个方法过程中的重均分子量变化小于或等于约25％。
20.权利要求19的方法，其中重均分子量在整个方法过程中的变化小于或等于约10％。
21.权利要求1-20任意一项的方法，其中聚合物选自聚酰亚胺、聚醚酰亚胺、聚砜、聚醚砜、聚碳酸酯、聚酯碳酸酯、聚苯醚、聚丙烯酸酯和包含至少一种前述聚合物的组合。
22.权利要求1-5和8-21任意一项的方法，其中溶剂选自乙酸芳基酯和乙酸C4-C10烷基酯、碳酸C2-C6烷基酯、甲酰胺、N-C1-C6烷基甲酰胺、C1-C6烷基亚砜、乙酸烷氧基烷基酯、N-C1-C6烷基吡咯烷酮、酚、C1-C6烷基烷基酚、芳基醚、C1-C6烷基芳基醚、C1-C6烷基脲、C4-C6环丁砜、N-乙酰基环醚、C1-C6烷基乙酰胺、C1-C6烷基磷酰胺、C3-C6内酯、芳基烷基酮以及包含至少一种前述溶剂的可溶性组合。
23.权利要求22的方法，其中溶剂选自乙酸丁酯、碳酸二乙酯、甲酰胺、甲基甲酰胺、二甲基甲酰胺、二甲基亚砜、乙酸甲氧基乙酯、N-甲基吡咯烷酮、碳酸亚丙酯、茴香醚、四甲基脲、二甲基脲、环丁砜、甲基茴香醚、N-乙酰基吗啉酮、二甲基乙酰胺、一甲基乙酰胺、veratole、六甲基磷酰胺、丁内酯、苯乙酮、苯酚、甲酚、2，4，6-三甲苯酚、二甲苯酚以及包含至少一种前述溶剂的可溶性组合。
24.权利要求1-23任意一项的方法，其中溶剂包含小于或等于约1重量％的卤素，基于溶剂的总重量。
25.权利要求1-24任意一项的方法，其中溶剂的介电常数大于或等于约4。
26.权利要求25的方法，其中介电常数大于或等于约10。
27.权利要求1-26任意一项的方法，其中溶液的粘度为约1～约30,000cps，该粘度是按照ASTM D1824在室温下测定的。
28.权利要求27的方法，其中粘度为约1～约2,000cps。
29.权利要求28的方法，其中在45℃下加热3h后，其粘度变化小于或等于约25％。
30.权利要求1-29任意一项的方法，其中溶液包含小于或等于约0.1重量％的颗粒，在沿其长轴方向测定时，这些颗粒的直径大于或等于约0.05μm，这是通过激光散射法测定的。
31.权利要求1-30任意一项的方法，其中溶液包含雾度百分比小于或等于约5％，该雾度百分比是按照ASTM D1003测定的。
32.权利要求31的方法，其中雾度百分比小于或等于约1％。
33.权利要求1-32任意一项的方法，其中溶液的含水量小于或等于约5重量％，基于溶液的总重量。
34.权利要求33的方法，其中含水量小于或等于约0.5重量％。
35.权利要求1-34任意一项的方法，其中涂布基底的剥离强度大于2lb/in。
36.权利要求1-35任意一项的方法，其中涂层的粗糙度小于或等于约20。
37.权利要求36的方法，其中粗糙度小于或等于约8。
38.权利要求37的方法，其中粗糙度小于或等于约5。
39.权利要求1-38任意一项的方法，其中涂层的波纹小于或等于约15nm，整个基底表面内有小于或等于约3个起伏点，起伏点的高度小于或等于约25nm，其中波纹是以约4mm2面积内的峰谷差表示的。
40.权利要求1-39任意一项的方法，其中涂层在整个基底表面内有小于或等于约5个起伏点。
41.权利要求40的方法，其中涂层在整个基底表面内有小于或等于约3个起伏点。
42.权利要求41的方法，其中涂层在整个基底表面内有小于或等于约1个起伏点。
43.权利要求40-42任意一项的方法，其中起伏点的高度小于或等于约15nm。
44.通过权利要求1-43任意一项的方法获得的旋涂基底。
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28508801P | 2001-04-19 | 2001-04-19 | |
| US28501401P | 2001-04-19 | 2001-04-19 | |
| US28502201P | 2001-04-19 | 2001-04-19 | |
| US60/285,022 | 2001-04-19 | ||
| US60/285,088 | 2001-04-19 | ||
| US60/285,014 | 2001-04-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1525888A true CN1525888A (zh) | 2004-09-01 |
| CN100391620C CN100391620C (zh) | 2008-06-04 |
Family
ID=27403501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028084527A Expired - Fee Related CN100391620C (zh) | 2001-04-19 | 2002-04-18 | 旋涂介质 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20020155216A1 (zh) |
| EP (1) | EP1427541B1 (zh) |
| JP (1) | JP2004536693A (zh) |
| KR (1) | KR20030090761A (zh) |
| CN (1) | CN100391620C (zh) |
| AU (1) | AU2002303382A1 (zh) |
| DE (1) | DE60238336D1 (zh) |
| WO (1) | WO2002085537A2 (zh) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102448621A (zh) * | 2009-04-15 | 2012-05-09 | 3M创新有限公司 | 可减少涂层缺陷的涂布方法和设备 |
| CN109314042A (zh) * | 2016-06-21 | 2019-02-05 | 霍尼韦尔国际公司 | 适用于高级平面化应用的材料和旋涂方法 |
| CN110453505A (zh) * | 2018-05-08 | 2019-11-15 | 浙江大嘴鸭服饰有限公司 | 一种增加羽绒服保温效果的方法 |
| CN112024285A (zh) * | 2020-08-24 | 2020-12-04 | 广东紫晶信息存储技术股份有限公司 | 一种多段式点胶方法及点胶装置 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007072192A (ja) * | 2005-09-07 | 2007-03-22 | Fujifilm Corp | 光記録媒体及びその製造方法 |
| CN101291876A (zh) * | 2005-10-19 | 2008-10-22 | 松下电器产业株式会社 | 金属氧化膜的形成方法、金属氧化膜及光学电子设备 |
| JP4675812B2 (ja) * | 2006-03-30 | 2011-04-27 | 株式会社東芝 | 磁気記録媒体、磁気記録装置および磁気記録媒体の製造方法 |
| US8293323B2 (en) | 2007-02-23 | 2012-10-23 | The Penn State Research Foundation | Thin metal film conductors and their manufacture |
| JP5457866B2 (ja) * | 2010-02-08 | 2014-04-02 | 株式会社日立ハイテクノロジーズ | スピンコート方法及びスピンコーター |
| US10737973B2 (en) | 2012-02-28 | 2020-08-11 | Corning Incorporated | Pharmaceutical glass coating for achieving particle reduction |
| MX2014010334A (es) | 2012-02-28 | 2014-09-22 | Corning Inc | Articulos de vidrio con revestimientos de baja friccion. |
| US11497681B2 (en) | 2012-02-28 | 2022-11-15 | Corning Incorporated | Glass articles with low-friction coatings |
| US10273048B2 (en) | 2012-06-07 | 2019-04-30 | Corning Incorporated | Delamination resistant glass containers with heat-tolerant coatings |
| US9034442B2 (en) | 2012-11-30 | 2015-05-19 | Corning Incorporated | Strengthened borosilicate glass containers with improved damage tolerance |
| US10117806B2 (en) | 2012-11-30 | 2018-11-06 | Corning Incorporated | Strengthened glass containers resistant to delamination and damage |
| MX2017002898A (es) | 2014-09-05 | 2017-10-11 | Corning Inc | Artículos de vidrio y métodos para mejorar la confiabilidad de artículos de vidrio. |
| CN116282967A (zh) | 2014-11-26 | 2023-06-23 | 康宁股份有限公司 | 用于生产强化且耐用玻璃容器的方法 |
| EP3150564B1 (en) | 2015-09-30 | 2018-12-05 | Corning Incorporated | Halogenated polyimide siloxane chemical compositions and glass articles with halogenated polylmide siloxane low-friction coatings |
| SG11201803373UA (en) | 2015-10-30 | 2018-05-30 | Corning Inc | Glass articles with mixed polymer and metal oxide coatings |
| US10563014B2 (en) * | 2017-09-11 | 2020-02-18 | Fujifilm Electronic Materials U.S.A., Inc. | Dielectric film forming composition |
Family Cites Families (103)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3730760A (en) * | 1971-11-26 | 1973-05-01 | Ibm | Vertical centrifugal spin coating method |
| FR2288370A1 (fr) * | 1974-10-18 | 1976-05-14 | Thomson Brandt | Perfectionnements aux supports d'information a lecture optique |
| US4329697A (en) * | 1977-03-28 | 1982-05-11 | Rca Corporation | Information record |
| JPS6053675B2 (ja) * | 1978-09-20 | 1985-11-27 | 富士写真フイルム株式会社 | スピンコ−テイング方法 |
| US4441179A (en) * | 1979-01-15 | 1984-04-03 | Discovision Associates | Optical video disc structure |
| US4243317A (en) * | 1979-06-27 | 1981-01-06 | Eastman Kodak Company | Contact printing apparatus |
| JPS5671821A (en) * | 1979-11-14 | 1981-06-15 | Hitachi Ltd | Substrate for magnetic disc and its manufacture |
| US4515828A (en) * | 1981-01-02 | 1985-05-07 | International Business Machines Corporation | Planarization method |
| US4503420A (en) * | 1982-05-07 | 1985-03-05 | Digital Equipment Corporation | Arrangement for encoding and decoding information signals |
| JPS5977647A (ja) * | 1982-10-26 | 1984-05-04 | Matsushita Electric Ind Co Ltd | 光学式円盤 |
| US4451507A (en) * | 1982-10-29 | 1984-05-29 | Rca Corporation | Automatic liquid dispensing apparatus for spinning surface of uniform thickness |
| US4492718A (en) * | 1982-12-17 | 1985-01-08 | Burroughs Corporation | Rotation coating of disk substrate with acrylate prepolymer |
| US4584259A (en) * | 1982-12-17 | 1986-04-22 | Burroughs Corporation | Coated media for optical recording with acrylic overcoat |
| DE3407253A1 (de) * | 1983-06-15 | 1984-12-20 | Magnetic Peripherals Inc., Minneapolis, Minn. | Verfahren zum auftragen eines magnetischen (beschichtungs-)mediums auf eine platte oder scheibe |
| FR2548578B1 (fr) * | 1983-07-04 | 1986-01-31 | Thomson Csf | Procede de fabrication de disques optiques par pressage et disque obtenu par un tel procede |
| US4514583A (en) * | 1983-11-07 | 1985-04-30 | Energy Conversion Devices, Inc. | Substrate for photovoltaic devices |
| JPS60191446A (ja) * | 1984-03-09 | 1985-09-28 | Daikin Ind Ltd | 光デイスク材料 |
| US4659605A (en) * | 1984-05-16 | 1987-04-21 | Richardson Chemical Company | Electroless deposition magnetic recording media process and products produced thereby |
| DE3425578A1 (de) * | 1984-07-11 | 1986-01-16 | Polygram Gmbh, 2000 Hamburg | Optisch auslesbarer plattenfoermiger informationstraeger hoher speicherdichte |
| US5100741A (en) * | 1984-09-12 | 1992-03-31 | Seiko Epson Corporation | Magneto-optic recording systems |
| JPS6190343A (ja) * | 1984-10-09 | 1986-05-08 | Polyplastics Co | 光ディスク |
| DE3585310D1 (de) * | 1984-11-08 | 1992-03-12 | Digital Equipment Corp | Kopfzusammenbau mit schmaler kontur. |
| US4920441A (en) * | 1985-03-13 | 1990-04-24 | Nippon Telegraph and Telehpone Corp. | Flexible magnetic diskette |
| US5379439A (en) * | 1985-06-04 | 1995-01-03 | Quantum Corporation | Fixed disk drive mounted to printed circuit board |
| JPH0673179B2 (ja) * | 1985-06-14 | 1994-09-14 | ポリプラスチックス株式会社 | 磁気デイスク |
| JPS62105616A (ja) * | 1985-11-01 | 1987-05-16 | Daicel Chem Ind Ltd | 光デイスクの射出成形用金型 |
| JPS62120629A (ja) * | 1985-11-20 | 1987-06-01 | Sumitomo Special Metals Co Ltd | 磁気ディスク及びその製造方法 |
| EP0226123A3 (en) * | 1985-12-03 | 1988-08-10 | Matsushita Electric Industrial Co., Ltd. | Method for producing transparent plastic article |
| FR2610753A1 (fr) * | 1987-02-11 | 1988-08-12 | Commissariat Energie Atomique | Substrat pour memoire a disque magnetique et procede de fabrication |
| JPS62204451A (ja) * | 1986-03-03 | 1987-09-09 | Daicel Chem Ind Ltd | 光デイスク用プラスチツク基板とその製法 |
| US4737877A (en) * | 1986-05-05 | 1988-04-12 | International Business Machines Corporation | Structure to provide optical and capacitive contrast on magnetic recording disk |
| US4810527A (en) * | 1986-09-19 | 1989-03-07 | E. I. Du Pont Nemours And Company | Free surface casting method |
| FR2604552A1 (fr) * | 1986-09-29 | 1988-04-01 | Rhone Poulenc Chimie | Substrat polymere rigide utilisable comme support d'enregistrement magnetique et le disque magnetique obtenu a partir de ce substrat |
| EP0263512B1 (en) * | 1986-10-09 | 1994-06-01 | Asahi Glass Company Ltd. | Glass substrate for a magnetic disc and process for its production |
| US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
| US4999234A (en) * | 1987-08-10 | 1991-03-12 | Polaroid Corporation | Holographic optical data storage medium |
| DE3743491A1 (de) * | 1987-12-22 | 1989-07-13 | Bayer Ag | Verwendung von mischungen aus polycarbonaten und styrolpolymerisaten als substrate fuer optische speicher |
| US4908826A (en) * | 1988-01-05 | 1990-03-13 | Digital Equipment Corporation | Stored data error correction system |
| JPH01211226A (ja) * | 1988-02-17 | 1989-08-24 | Hitachi Maxell Ltd | 磁気ディスク |
| JPH01140616U (zh) * | 1988-03-16 | 1989-09-26 | ||
| US4893910A (en) * | 1988-03-16 | 1990-01-16 | Hewlett-Packard Company | Magneto-optical recording system having medium with domainless control layer |
| US5202380A (en) * | 1988-03-29 | 1993-04-13 | Rohm And Haas Company | Polyolefin compositions with improved impact strength |
| EP0337445A3 (en) * | 1988-04-13 | 1991-01-16 | Hitachi, Ltd. | Laminar structure comprising organic material and inorganic material, methods for producing it and its use |
| DE68918623T2 (de) * | 1988-04-16 | 1995-03-30 | Daicel Chem | Verfahren und Herstellung eines formatierten Substrates für eine optische Scheibe und Spritzform für dessen Verwendung. |
| JPH078514B2 (ja) * | 1988-04-18 | 1995-02-01 | ダイセル化学工業株式会社 | 光ディスク用プラスチック基板の射出成形法 |
| US5109377A (en) * | 1988-08-22 | 1992-04-28 | Fuji Photo Film Co., Ltd. | Magneto-optical recording medium and method of producing the same |
| JPH0258729A (ja) * | 1988-08-24 | 1990-02-27 | Nec Corp | 磁気ディスク基板およびその製造方法 |
| JP2570402B2 (ja) * | 1988-09-30 | 1997-01-08 | 日本ビクター株式会社 | 光学式情報記録媒体成型装置 |
| US4911966A (en) * | 1988-12-02 | 1990-03-27 | Mitsubishi Monsanto Chemical Company | Optical disk substrate |
| JPH0692263B2 (ja) * | 1989-02-16 | 1994-11-16 | 伊藤忠商事株式会社 | 記録ディスク基板及びその製造方法 |
| US5097370A (en) * | 1989-03-17 | 1992-03-17 | Digital Equipment Corporation | Subambient pressure air bearing slider for disk drive |
| US5191563A (en) * | 1989-06-29 | 1993-03-02 | Digital Equipment Corporation | Method for increasing track density of magneto-optical storage media |
| US5188863A (en) * | 1989-06-30 | 1993-02-23 | E. I. Du Pont De Nemours And Company | Direct effect master/stamper for optical recording |
| US5094925A (en) * | 1989-06-30 | 1992-03-10 | Sharp Kabushiki Kaisha | Opto-magnetic recording medium |
| CA2017284C (en) * | 1989-07-04 | 1995-10-03 | Kazutomi Suzuki | Optical recording medium |
| JPH03173958A (ja) * | 1989-12-01 | 1991-07-29 | Pioneer Electron Corp | 光磁気ディスク |
| US5392263A (en) * | 1990-01-31 | 1995-02-21 | Sony Corporation | Magneto-optical disk system with specified thickness for protective layer on the disk relative to the numerical aperture of the objective lens |
| US5099469A (en) * | 1990-02-20 | 1992-03-24 | Del Mar Avionics | Process for manufacturing an optical disc master |
| US5108781A (en) * | 1990-03-12 | 1992-04-28 | Magnetic Peripherals Inc. | Process for manufacturing selectively textured magnetic recording media |
| US5094884A (en) * | 1990-04-24 | 1992-03-10 | Machine Technology, Inc. | Method and apparatus for applying a layer of a fluid material on a semiconductor wafer |
| CA2047163C (en) * | 1990-07-20 | 1995-05-16 | Kenji Ohta | Optical disk |
| JPH04159634A (ja) * | 1990-10-22 | 1992-06-02 | Pioneer Electron Corp | 光ディスク製造方法 |
| EP0498564B1 (en) * | 1991-02-04 | 1998-04-08 | Nippon Zeon Co., Ltd. | Thermoplastic saturated norbornene group polymer composition |
| US5177656A (en) * | 1991-02-05 | 1993-01-05 | Hoechst Celanese Corporation | Flexible magnetic disc cassettes with integrally molded wear button |
| US6010761A (en) * | 1991-03-12 | 2000-01-04 | Sony Corporation | Optical disc |
| JP2995884B2 (ja) * | 1991-03-18 | 1999-12-27 | 三菱化学株式会社 | 水素化ビニル芳香族炭化水素重合体組成物及び光ディスク基板 |
| US5193039A (en) * | 1991-04-17 | 1993-03-09 | Digital Equipment Corporation | Permanet magnet easy-axis biased magnetoresistive head |
| US5177181A (en) * | 1991-06-06 | 1993-01-05 | Occidental Chemical Corporation | Diamines and photosensitive polyimides made therefrom |
| DE4126422A1 (de) * | 1991-08-09 | 1993-02-11 | Bayer Ag | Vertraegliche polymermischungen mit thermoplastischen polycarbonaten |
| JPH0589517A (ja) * | 1991-09-25 | 1993-04-09 | Sony Corp | 光デイスク |
| US5177176A (en) * | 1991-10-29 | 1993-01-05 | E. I. Du Pont De Nemours And Company | Soluble pseudo rod-like polyimides having low coefficient of thermal expansion |
| US5199090A (en) * | 1992-03-06 | 1993-03-30 | Hewlett-Packard Company | Flying magnetooptical read/write head employing an optical integrated circuit waveguide |
| US5400317A (en) * | 1993-04-01 | 1995-03-21 | Balzers Aktiengesellschaft | Method of coating a workpiece of a plastic material by a metal layer |
| US5391522A (en) * | 1993-05-19 | 1995-02-21 | Kabushiki Kaisya Ohara | Glass-ceramic for magnetic disks and method for manufacturing the same |
| US5395803A (en) * | 1993-09-08 | 1995-03-07 | At&T Corp. | Method of spiral resist deposition |
| US5707705A (en) * | 1993-09-08 | 1998-01-13 | Tulip Memory Systems, Inc. | Titanium or titanium-alloy substrate for magnetic-recording media |
| US5487931A (en) * | 1993-12-02 | 1996-01-30 | Annacone; William R. | Rigid disc substrate comprising a central hard core substrate with a hard, thermally and mechanically matched overlying smoothing layer and method for making the same |
| US5681635A (en) * | 1994-01-20 | 1997-10-28 | Tulip Memory Systems, Inc. | Magnetic recording medium having a ceramic substrate, an underlayer having a dense fibrous zone T structure, and a magnetic layer |
| JPH0817155A (ja) * | 1994-06-30 | 1996-01-19 | Sony Corp | 磁気ディスク |
| US5494782A (en) * | 1994-07-29 | 1996-02-27 | Sony Corporation | Direct to stamper/mother optical disk mastering |
| US5489774A (en) * | 1994-09-20 | 1996-02-06 | The Board Of Trustees Of The Leland Stanford University | Combined atomic force and near field scanning optical microscope with photosensitive cantilever |
| KR100285541B1 (en) * | 1994-09-30 | 2001-01-04 | Samsung Electronics Co Ltd | Method for manufacturing organic optical cd-recordable disc |
| US5493454A (en) * | 1994-10-04 | 1996-02-20 | Quantum Corporation | Write precompensation optimization in a PRML channel using a selected PRML signal level |
| JP2736869B2 (ja) * | 1994-11-16 | 1998-04-02 | 株式会社オハラ | 磁気ディスク基板の製造方法 |
| US5510164A (en) * | 1994-12-16 | 1996-04-23 | International Business Machines Corporation | Single-sided ablative worm optical disk with multilayer protective coating |
| EP0718048A1 (en) * | 1994-12-20 | 1996-06-26 | Eastman Kodak Company | Spin process for highly conformal coatings |
| US5871654A (en) * | 1995-03-30 | 1999-02-16 | Ag Technology Co., Ltd. | Method for producing a glass substrate for a magnetic disk |
| US5726108A (en) * | 1995-07-24 | 1998-03-10 | Yamamura Glass Co., Ltd. | Glass-ceramic magnetic disk substrate |
| US5691256A (en) * | 1995-12-28 | 1997-11-25 | Yamamura Glass Co., Ltd. | Glass composition for magnetic disk substrates and magnetic disk substrate |
| TW366331B (en) * | 1996-02-02 | 1999-08-11 | Ohara Kk | A glass-ceramic substrate for a magnetic disk |
| TW342495B (en) * | 1996-07-22 | 1998-10-11 | Matsushita Electric Ind Co Ltd | Master information carrier, method of producing the same, and method for recording master information signal on magnetic recording medium |
| AU5173598A (en) * | 1996-11-08 | 1998-06-10 | Ikonos Corporation | Method for coating substrates |
| US5859833A (en) * | 1997-09-02 | 1999-01-12 | General Electric Company | Optical disk grade copolyestercarbonates derived from hydroxyphenylindanols |
| JP3410342B2 (ja) * | 1997-01-31 | 2003-05-26 | 東京エレクトロン株式会社 | 塗布装置 |
| AU7957498A (en) * | 1997-06-16 | 1999-01-04 | Massachusetts Institute Of Technology | High efficiency photoresist coating |
| US6030681A (en) * | 1997-07-10 | 2000-02-29 | Raychem Corporation | Magnetic disk comprising a substrate with a cermet layer on a porcelain |
| US5871514A (en) * | 1997-08-01 | 1999-02-16 | Medtronic, Inc. | Attachment apparatus for an implantable medical device employing ultrasonic energy |
| US6183829B1 (en) * | 1997-11-07 | 2001-02-06 | Rohm And Haas Company | Process and apparatus for forming plastic sheet |
| US6183810B1 (en) * | 1998-01-21 | 2001-02-06 | Tokyo Electron Limited | Coating film forming method and coating apparatus |
| JP3519623B2 (ja) * | 1998-03-13 | 2004-04-19 | 株式会社東芝 | 記録媒体およびその製造方法 |
| US6338811B2 (en) * | 1998-03-19 | 2002-01-15 | Seagate Technology | Surface planarization of magnetic disk media |
| US6335080B1 (en) * | 1999-01-04 | 2002-01-01 | Seagate Technology Llc | Magnetic disk media and disk drives utilizing polymeric disk substrates |
| CN100449616C (zh) * | 1999-02-12 | 2009-01-07 | 通用电气公司 | 数据存储介质及其形成方法、压印衬底及检索数据的方法 |
-
2002
- 2002-04-18 US US10/063,398 patent/US20020155216A1/en not_active Abandoned
- 2002-04-18 AU AU2002303382A patent/AU2002303382A1/en not_active Abandoned
- 2002-04-18 JP JP2002583106A patent/JP2004536693A/ja not_active Withdrawn
- 2002-04-18 DE DE60238336T patent/DE60238336D1/de not_active Expired - Lifetime
- 2002-04-18 KR KR10-2003-7013645A patent/KR20030090761A/ko not_active Application Discontinuation
- 2002-04-18 CN CNB028084527A patent/CN100391620C/zh not_active Expired - Fee Related
- 2002-04-18 WO PCT/US2002/012132 patent/WO2002085537A2/en active Application Filing
- 2002-04-18 EP EP02731402A patent/EP1427541B1/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102448621A (zh) * | 2009-04-15 | 2012-05-09 | 3M创新有限公司 | 可减少涂层缺陷的涂布方法和设备 |
| CN102448621B (zh) * | 2009-04-15 | 2014-10-29 | 3M创新有限公司 | 可减少涂层缺陷的涂布方法和设备 |
| CN109314042A (zh) * | 2016-06-21 | 2019-02-05 | 霍尼韦尔国际公司 | 适用于高级平面化应用的材料和旋涂方法 |
| CN110453505A (zh) * | 2018-05-08 | 2019-11-15 | 浙江大嘴鸭服饰有限公司 | 一种增加羽绒服保温效果的方法 |
| CN112024285A (zh) * | 2020-08-24 | 2020-12-04 | 广东紫晶信息存储技术股份有限公司 | 一种多段式点胶方法及点胶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030090761A (ko) | 2003-11-28 |
| JP2004536693A (ja) | 2004-12-09 |
| DE60238336D1 (de) | 2010-12-30 |
| AU2002303382A1 (en) | 2002-11-05 |
| CN100391620C (zh) | 2008-06-04 |
| EP1427541A2 (en) | 2004-06-16 |
| WO2002085537A3 (en) | 2004-04-08 |
| WO2002085537A2 (en) | 2002-10-31 |
| US20020155216A1 (en) | 2002-10-24 |
| EP1427541B1 (en) | 2010-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100391620C (zh) | 旋涂介质 | |
| US4515828A (en) | Planarization method | |
| CN1340187A (zh) | 数据存储介质 | |
| CN1342977A (zh) | 光信息媒体及其试验方法 | |
| US4423454A (en) | Magnetic recording disk | |
| CN101060936A (zh) | 旋涂装置以及使用该装置制备的涂布基板 | |
| CN1340817A (zh) | 光学信息载体及其制造方法 | |
| CN1667705A (zh) | 磁性记录媒体的制造方法 | |
| CN1240064C (zh) | 光信息记录介质的制造方法 | |
| CN1203482C (zh) | 圆形光学存储盘的制造方法 | |
| JP2006007568A (ja) | 離型フィルム | |
| US7835257B2 (en) | Optical information recording medium | |
| JPS63197643A (ja) | 複合ポリエステルフイルム | |
| WO2006123619A1 (ja) | 多層情報記録媒体及びその製造方法 | |
| JP2004171658A (ja) | 垂直磁気記録媒体用基板および垂直磁気記録媒体並びにそれらの製造方法 | |
| JP4168627B2 (ja) | 磁気記録媒体用ポリエステルフィルム、その製造方法及び磁気記録媒体 | |
| US20010021466A1 (en) | Support for magnetic recording medium and process for producing the same | |
| JPH05242527A (ja) | 光ディスク及びその製造方法 | |
| JPH05269425A (ja) | 回転塗布装置 | |
| JP4251981B2 (ja) | 高密度ｄｖｄ光透過保護層の工程紙用ポリエステルフィルム | |
| JPH05334666A (ja) | 磁気ディスクの製造方法および磁気ディスク | |
| CN1338099A (zh) | 相变型光记录媒体及其制造方法 | |
| JPH05334667A (ja) | 磁気ディスクの製造方法および磁気ディスク | |
| CN1717728A (zh) | 旋涂装置以及使用此旋涂装置制造的涂层基板 | |
| JPH04295636A (ja) | 光情報記録媒体およびその製法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEPIK INNOVATIVE PLASTICS IP CO., LTD. Free format text: FORMER OWNER: GENERAL ELECTRIC CO. Effective date: 20080725 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20080725 Address after: Bergen Op Zoom Holland Patentee after: GENERAL ELECTRIC CO. Address before: American New York Patentee before: General Electric Co. |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Holland city Aupu zoom Bergen Patentee after: SABIC INNOVATIVE PLASTICS IP B.V. Address before: Holland city Aupu zoom Bergen Patentee before: SABIC INNOVATIVE PLASTICS IP B.V. |
|
| CP03 | Change of name, title or address |
Address after: Holland city Aupu zoom Bergen Patentee after: SABIC INNOVATIVE PLASTICS IP B.V. Address before: Bergen Op Zoom Holland Patentee before: GENERAL ELECTRIC CO. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080604 Termination date: 20170418 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |