CN1514954A - 半导体封装件及其制造方法 - Google Patents

半导体封装件及其制造方法 Download PDF

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Publication number
CN1514954A
CN1514954A CNA028052404A CN02805240A CN1514954A CN 1514954 A CN1514954 A CN 1514954A CN A028052404 A CNA028052404 A CN A028052404A CN 02805240 A CN02805240 A CN 02805240A CN 1514954 A CN1514954 A CN 1514954A
Authority
CN
China
Prior art keywords
film
wafer
sio
silicone
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028052404A
Other languages
English (en)
Chinese (zh)
Inventor
G
G·贝克
G·加德纳
B·哈克尼斯
L·马伦方特
S·萨尔马
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of CN1514954A publication Critical patent/CN1514954A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0012—Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Paints Or Removers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CNA028052404A 2001-02-20 2002-01-17 半导体封装件及其制造方法 Pending CN1514954A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,083 US6617674B2 (en) 2001-02-20 2001-02-20 Semiconductor package and method of preparing same
US09/789,083 2001-02-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2009101456222A Division CN101581880B (zh) 2001-02-20 2002-01-17 半导体封装件及其制造方法

Publications (1)

Publication Number Publication Date
CN1514954A true CN1514954A (zh) 2004-07-21

Family

ID=25146536

Family Applications (3)

Application Number Title Priority Date Filing Date
CNA028052404A Pending CN1514954A (zh) 2001-02-20 2002-01-17 半导体封装件及其制造方法
CN2009101456222A Expired - Lifetime CN101581880B (zh) 2001-02-20 2002-01-17 半导体封装件及其制造方法
CNA038269651A Pending CN1820230A (zh) 2001-02-20 2003-07-28 蚀刻构图的硅氧烷层的方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2009101456222A Expired - Lifetime CN101581880B (zh) 2001-02-20 2002-01-17 半导体封装件及其制造方法
CNA038269651A Pending CN1820230A (zh) 2001-02-20 2003-07-28 蚀刻构图的硅氧烷层的方法

Country Status (11)

Country Link
US (1) US6617674B2 (enExample)
EP (1) EP1362364B1 (enExample)
JP (1) JP4226905B2 (enExample)
KR (1) KR100813821B1 (enExample)
CN (3) CN1514954A (enExample)
AT (1) ATE494629T1 (enExample)
AU (1) AU2002248357A1 (enExample)
CA (1) CA2438126A1 (enExample)
DE (1) DE60238823D1 (enExample)
TW (1) TW563210B (enExample)
WO (2) WO2002067292A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101359608B (zh) * 2007-04-30 2011-01-19 美国博通公司 集成电路封装及其形成方法、晶圆级集成电路封装结构
CN101223476B (zh) * 2005-06-02 2011-11-16 道康宁公司 纳米图案形成方法，其中所使用的固化抗蚀剂膜和包含该抗蚀剂膜的制品
CN101501571B (zh) * 2006-08-14 2013-08-21 道康宁公司 使用显影溶剂制备图案化膜的方法

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DE10144467B4 (de) * 2001-09-10 2006-07-27 Infineon Technologies Ag Elektronisches Sensorbauteil und Verfahren zu seiner Herstellung
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US6905904B2 (en) * 2002-06-24 2005-06-14 Dow Corning Corporation Planar optical waveguide assembly and method of preparing same
US6907176B2 (en) 2002-06-24 2005-06-14 Dow Corning Corporation Planar optical waveguide assembly and method of preparing same
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JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
US7145229B2 (en) * 2002-11-14 2006-12-05 The Regents Of The University Of California Silicone metalization
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KR101278460B1 (ko) 2005-03-01 2013-07-02 다우 코닝 코포레이션 반도체 가공을 위한 임시 웨이퍼 접착방법
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JP5542331B2 (ja) * 2005-06-14 2014-07-09 ダウ・コーニング・コーポレイション 強化シリコーン樹脂フィルム及びそれらを調製する方法
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CN101379153B (zh) * 2006-02-02 2011-12-28 陶氏康宁公司 有机硅树脂膜，其制备方法和纳米材料填充的有机硅组合物
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JP2018507290A (ja) * 2015-02-03 2018-03-15 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 硬化性シリコーン配合物及び関連する硬化生成物、方法、物品、並びにデバイス
TWI678551B (zh) 2015-07-28 2019-12-01 美商道康寧公司 智慧型光學材料、配方、方法、用途、物品、及裝置

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Publication number Priority date Publication date Assignee Title
CN101223476B (zh) * 2005-06-02 2011-11-16 道康宁公司 纳米图案形成方法，其中所使用的固化抗蚀剂膜和包含该抗蚀剂膜的制品
CN101501571B (zh) * 2006-08-14 2013-08-21 道康宁公司 使用显影溶剂制备图案化膜的方法
CN101359608B (zh) * 2007-04-30 2011-01-19 美国博通公司 集成电路封装及其形成方法、晶圆级集成电路封装结构

Also Published As

Publication number Publication date
CN101581880B (zh) 2011-12-14
CN101581880A (zh) 2009-11-18
EP1362364A2 (en) 2003-11-19
JP2004530288A (ja) 2004-09-30
JP4226905B2 (ja) 2009-02-18
WO2002067292A3 (en) 2002-12-19
ATE494629T1 (de) 2011-01-15
DE60238823D1 (de) 2011-02-17
WO2005017627A1 (en) 2005-02-24
KR100813821B1 (ko) 2008-03-17
EP1362364B1 (en) 2011-01-05
CA2438126A1 (en) 2002-08-29
US20020158317A1 (en) 2002-10-31
TW563210B (en) 2003-11-21
CN1820230A (zh) 2006-08-16
AU2002248357A1 (en) 2002-09-04
US6617674B2 (en) 2003-09-09
KR20030080012A (ko) 2003-10-10
WO2002067292A2 (en) 2002-08-29

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